Faculty Profiles - KISODA Kenji

Published Papers - KISODA Kenji

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Optical film-thinning of graphene epitaxially grown on 4H-SiC(0001) : robustness of monolayer-graphene agains the photoexcitation

Ryosuke Horie, Ryuichi Hirosue, Jun’ichi Kanasaki, Kenji Kisoda, Isamu Yamamoto, Junpei Azuma, Kazutoshi Takahashi

Journal of Physics: Condensed Matter 2023.03 [Refereed]

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Raman imaging studies on perforated MoS$_{2}$ films prepared by RF sputtering method

N. Hasuike, S. Yamauchi, S. Kamoi, W. S. Yoo, KISODA Kenji

Journal of Physics: Conference Series 1220 012036 2019 [Refereed]

Optical Characterization of MoS$_{2}$ sputtered thin films

N. Hasuike, S. Yamauchi, K. Seki, S. Kamoi, K. Nishio, K. Kisoda

Journal of Physics: Conference Series 1220 012057 2019 [Refereed]

Generation and analysis of ZnO nanoparticles using sputtering and laser

Wakaki Wataru, Sanpei Akio, Hasuike Noriyuki, Kamoi Susumu, Kisoda Kenji

JSAP Annual Meetings Extended Abstracts ( The Japan Society of Applied Physics ) 2018.2 1721 - 1721 2018.09

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Origin of a Raman scattering peak generated in single-walled carbon nanotubes by X-ray irradiation and subsequent thermal annealing

Toshiya Murakami, Mitsuaki Matsuda, Kenji Kisoda, Chihiro Itoh

AIP ADVANCES ( AMER INST PHYSICS ) 6 ( 8 ) 085303 2016.08 [Refereed]

We have found that a Raman scattering (RS) peak around 1870 cm(-1) was produced by the annealing of the X-ray irradiated film of single-walled carbon nanotubes (SWNTs) at 450 degrees C. The intensity of 1870-cm(-1) peak showed a maximum at the probe energy of 2.3 eV for the RS spectroscopy with various probe lasers. Both the peak position and the probe-energy dependence were almost identical to those of the one-dimensional carbon chains previously reported in multi-walled carbon nanotubes. Consequently, we concluded that the 1870-cm(-1) peak found in the present study is attributed to carbon chains. The formation of carbon chains by the annealing at temperature lower than 500 degrees C is firstly reported by the present study. The carbon chains would be formed by aggregation of the interstitial carbons, which are formed as a counterpart of carbon vacancies by X-ray irradiation diffused on SWNT walls. The result indicates that the combination of X-ray irradiation and subsequent thermal annealing is a feasible tool for generating new nanostructures in SWNT. (C) 2016 Author(s).

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Formation of carbon-nanostructure from X-ray induced defect in single-walled carbon nanotubes

Toshiya Murakami, Satoshi Isozaki, Kenji Kisoda, Chihiro Itoh

DIAMOND AND RELATED MATERIALS ( ELSEVIER SCIENCE SA ) 65 65 - 68 2016.05 [Refereed]

We have studied annealing effects on X-ray irradiated single-walled carbon nanotubes (SWNTs) by confocal micro-Raman scattering spectroscopy. The SWNT films irradiated with 1254-eV X-ray were annealed in argon atmosphere with increasing the temperature from 200 degrees C to 500 degrees C by 100 degrees C. We found that a new Raman peak at similar to 1130 cm(-1) came into existence after the annealing at 300-400 degrees C. The 1130-cm(-1) peak was grown by the annealing exclusively in the X-ray irradiated sample. It is presumable that the 1130-cm(-1) peak is ascribed to carbon nanostructure formed by the annealing of the X-ray irradiated SWNT. Based on the comparison of spatial images of Raman intensity, the nanostructure responsible to the 1130-cm(-1) peak is likely formed by aggregation of interstitial carbon atoms diffused on SWNT surface. Because of the comparison of the probe wavelength dependence of the peak frequency with previous reports, we concluded that polyacetylene-like structures are formed by the post-irradiation annealing of SWNT. (C) 2016 Elsevier B.V. All rights reserved.

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原子層層状物質の光デバイスへの応用に関する研究

木曽田賢治（Part： Lead author,　Corresponding author )

京都府中小企業技術センター技報 ( 京都府中小企業技術センター ) 44 ( 44 ) 41 - 44 2016

Spectroscopic characterization of nitrogen- and boron-doped graphene layers

Susumu Kamoi, Jung Gon Kim, Noriyuki Hasuike, Kenji Kisoda, Hiroshi Harima

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 54 ( 11 ) 115101-1 - 115101-5 2015.11 [Refereed]

Nitrogen- and boron-doped graphene layers were grown on copper substrates by alcoholic chemical vapor deposition and characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical transport measurements. The growth of high-quality monolayer graphene was confirmed by micro-Raman spectroscopy. The G and 2D peaks showed systematic frequency shift and broadening with the impurity concentration. The G peaks showed Fano-like asymmetric line shapes. These behaviors suggested the generation of free carriers by doping. XPS and electrical transport measurements also supported the systematic incorporation of impurities in graphene layers. (C) 2015 The Japan Society of Applied Physics

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Diameter-dependent annealing kinetics of X-ray-induced defects in single-walled carbon nanotubes

T. Murakami, M. Matsuda, S. Isozaki, K. Kisoda, C. Itoh

12TH EUROPHYSICAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS (EURODIM 2014) ( IOP PUBLISHING LTD ) 80 012016 2015 [Refereed]

Diameter-dependent annealing effects of X-ray-induced defects in single-walled carbon nanotubes (SWNTs) were studied by Raman scattering spectroscopy. We found that Xray-induced defects were formed in thin SWNTs at higher density than that in thick SWNTs. The X-ray-induced defects, distant pairs of interstitials and vacancies (I-V), were eliminated by thermal annealing. The recovery temperature of the X-ray-induced defects in the thin SWNTs were higher than that of the thick ones, indicating the thermal stability of the defects in thinner SWNTs are higher. In order to simulate the annealing behaviours of the X-ray-induced defects in SWNTs with diameters of similar to 0.9 and similar to 1.4 nm, we suggested the competitive reactions of diffusion of interstitials, formation of close I-V pairs and their recombination. The simulated results showed that the reaction-rate constant of elimination of close I-V pairs is dependent on tube diameter, which is presumably derived from nano-structure effects of SWNTs.

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Non-catalytic direct growth of nanographene on MgO substrates

Susumu Kamoi, Jung-Gon Kim, Noriyuki Hasuike, Kenji Kisoda, Hiroshi Harima

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 53 ( 5 ) 06FD06 2014.05 [Refereed]

We have grown high-quality nanographene layers by alcoholic chemical vapor deposition on insulated MgO substrates without catalysts. Typical Raman spectra showed the formation of nanographene layers consisting mainly of sp(2) bonds. Their grain size depended on the flow rate of the carbon source. Planar and triangular nanographenes were formed on MgO(100) and (111) substrates, respectively. The results suggested that the lattice orientation of the MgO substrate determined the morphology of nanographenes. (C) 2014 The Japan Society of Applied Physics

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Multi-wavelength Raman scattering spectroscopic study of X-ray-irradiated single-walled carbon nanotube: Possibility of irradiation-induced electronic structure change

Toshiya Murakami, Yuki Yamamoto, Mitsuaki Matsuda, Kenji Kisoda, Hiroshi Nishigaki, Noriyki Hasuike, Hiroshi Harima, Chihiro Itoh

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 53 ( 5 ) 2014.05 [Refereed]

The resonant Raman scattering spectra of X-ray-irradiated single-walled carbon nanotubes (SWNTs) have been measured at 532, 561, 568, 647, and 660 nm. We found that X-ray irradiation induced a marked change in the radial breathing mode (RBM). In order to analyze the X-ray-induced change in the RBM spectra, we drew a map of the RBM peaks showing the relation between the peak position and the probe beam energy by interpolating the spectra measured at the probe wavelengths. We found that shifting the transition energy by 0.05 eV reproduced the RBM spectra of the irradiated SWNTs. This model well explains the results of our optical absorption measurements and previous reports on theoretical and scanning tunneling microscopy studies by other groups. On the basis of these results, we suggest that X-ray irradiation is one of the practical methods of controlling the electronic properties of SWNTs. (C) 2014 The Japan Society of Applied Physics

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Structural modification of single-walled carbon nanotube induced by X-ray irradiation and subsequent annealing studied by Raman scattering spectroscopy in radial breathing mode

Toshiya Murakami, Yuki Yamamoto, Mitsuaki Matsuda, Kenji Kisoda, Chihiro Itoh

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 53 ( 2 ) 02BD11 2014.02 [Refereed]

The formation of X-ray-induced defects changes the spectral shape of the radial breathing mode (RBM) and defect-induced mode (D band) in the Raman spectra of single-walled carbon nanotubes (SWNTs). X-ray-induced defects have been found to be annealed by thermal treatment, indicating that they are Frenkel pairs (vacancy and interstitial pairs). We found that the spectral shape of RBM is not entirely recovered after postirradiation annealing. The temperatures for the complete annealing of X-ray-induced defects were within the range of 200-600 degrees C depending on the tube geometry. From these results, we suggest that the stability of X-ray-induced defects depends on the tube geometry and that the combination of X-ray irradiation and post-irradiation annealing causes a chirality change in SWNTs. (C) 2014 The Japan Society of Applied Physics

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Isochronal annealing study of X-ray induced defects in single- and double-walled carbon nanotubes

Toshiya Murakami, Yuki Yamamoto, Kenji Kisoda, Chihiro Itoh

JOURNAL OF APPLIED PHYSICS ( AMER INST PHYSICS ) 114 ( 11 ) 2013.09 [Refereed]

X-ray induced defects in single-walled (SWCNTs) and double-walled carbon nanotubes (DWCNTs) were characterized by Raman scattering spectroscopy. Frenkel defects, interstitial-vacancy pairs, were revealed to form in both SWCNTs and DWCNTs after X-ray irradiation because these defects were entirely healed by thermal annealing. In order to clarify the structure of the X-ray induced defect in SWCNT and DWCNT, isochronal-annealing experiments were performed on the irradiated samples and the activation energy for defect healing was estimated. The intensity of D band (defect induced band) on Raman spectra was used as a measure of the density of X-ray induced defects. The experimental results were in good agreement with the simulated values using second order reaction model, which indicated that the defect healing was determined by the migration energy of interstitials on the carbon layer. We also found that the activation energy for defect healing of SWCNT and DWCNT were around 0.5 eV and 0.32 eV, respectively. The X-ray induced defects in SWCNTs were more stable than those in DWCNTs. Compared these estimated activation energies to previous theoretical reports, we concluded that bridge and/or dumbbell interstitials are formed in both SWCNT and DWCNT by X-ray irradiation. (C) 2013 AIP Publishing LLC.

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X-ray irradiation effect of double walled carbon nanotube

Toshiya Murakami, Kunihito Asai, Yuki Yamamoto, Kenji Kisoda, Chihiro Itoh

European Physical Journal B 86 ( 4 ) 2013.04 [Refereed]

We have studied double-walled carbon nanotube (DWNT) irradiated by soft X-ray by Raman scattering spectroscopy and the spectral characteristics are compared to single-walled carbon nanotube (SWNT) irradiated under the same condition. We proved that DWNT is more stable for the X-ray induced defect formation than SWNT. Moreover, we found that the outer tube of DWNT was more sensitive on X-ray irradiation than the inner tube. The defect was recovered by annealing in Ar at lower temperature than that of SWNT. Based on these results, we inferred that X-ray irradiation leads to formation of interstitial-vacancy pairs, Frenkel defects, in carbon nanotube. The interstitial-vacancy separation on the inner tube of DWNT is conceivably shorter than that of the outer tube. © 2013 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.

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Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target

Noriyuki Hasuike, Koji Nishio, Kenji Kisoda, Hiroshi Harima

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 52 ( 1 ) 2013.01 [Refereed]

We prepared Al-deopd ZnO (AZO) films by reactive DC sputtering method using metallic target at room temperature. All the tested AZO films (0 < [Al] < 8.9%) with the transmittance above 85% in visible region were successfully grown on quartz substrate. All the AZO films have wurtzite structure with no impurity phase. The AZO films with [Al] < 2.9% have the preferential orientation in c-axis direction, and the orientation became indistinct as increasing in Al content. In the optical measurement, the absorption edge was shifted from 3.30 to 3.66 eV due to Burstein-Moss effect, and the electron densities were roughly estimated at 2.5 x 10(19) to 1.5 x 10(21) cm(-3), respectively. On the other hand, the high transmittance in infrared region suggested low electron mobility. Since this gives rise to the high electric resistivity, the further improvements and optimization of the growth conditions are required for the realization of AZO based transparent conductive. (C) 2013 The Japan Society of Applied Physics

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A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto, Hiroki Hibino

DIAMOND AND RELATED MATERIALS ( ELSEVIER SCIENCE SA ) 25 80 - 83 2012.05 [Refereed]

Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times. (C) 2012 Elsevier B.V. All rights reserved.

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Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy

Jung Gon Kim, Yasuhito Kamei, Atsuhito Kimura, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Yu Huai Liu, Takashi Matsuoka

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS ( WILEY-V C H VERLAG GMBH ) 249 ( 4 ) 779 - 783 2012.04 [Refereed]

Improvement of hexagonal InN film quality grown by metal-organic vapor phase epitaxy has been challenged by changing the ambient-gas pressure in 87320?kPa (similar to 13?atm.). The growth temperature and the source-gas supply ratio, the so-called V/III ratio, were optimized at each ambient-gas pressure to improve the film quality. Raman scattering characterization of InN phonon spectra showed great improvement in crystalline quality by increasing the pressure from 87 to 213?kPa, and furthermore to 320?kPa. This tendency was also confirmed by a structural characterization by X-ray diffraction.

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Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films (vol 99, 251904, 2011)

Jung Gon Kim, Atsuhito Kimura, Yasuhito Kamei, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu

APPLIED PHYSICS LETTERS ( AMER INST PHYSICS ) 100 ( 13 ) 2012.03 [Refereed]

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Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films

Jung Gon Kim, Atsuhito Kimura, Yasuhito Kamei, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu

APPLIED PHYSICS LETTERS ( AMER INST PHYSICS ) 99 ( 25 ) 2011.12 [Refereed]

An longitudinal-optic-phonon-plasmon coupled mode (LOPC) has been clearly observed by Raman scattering in n-type Al(x)Ga(1-x)N films with x similar to 0.67 and different carrier densities n - 1 x 10(17)-9 x 10(17) cm(-3). The A(1)-LO-phonon mode showed a systematic frequency shift and broadening with increasing n. This is a characteristic behavior of LOPC as previously observed in n-type binary semiconductors. A theoretical line-shape fitting analysis was conducted for the LOPC profile using n and plasmon-damping rate as adjustable parameter. Assuming m*/m(0)-0.28 for the longitudinal effective mass of electron, the analysis well reproduced carrier density and mobility deduced by Hall measurement. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670338]

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Determination of Al molar fraction in AlxGa1-xN films by Raman scattering

J. G. Kim, A. Kimura, Y. Kamei, N. Hasuike, H. Harima, K. Kisoda, Y. Simahara, H. Miyake, K. Hiramatsu

JOURNAL OF APPLIED PHYSICS ( AMER INST PHYSICS ) 110 ( 3 ) 2011.08 [Refereed]

Raman scattering spectra were observed for a series of AlxGa1-xN film samples to evaluate the Al molar fraction x from phonon frequencies using published data for calibration. Comparison with a precise quantitative measurement of x by electron-probe microanalysis (EPMA) showed systematic deviations from the Raman analysis up to about 6 similar to 15%. The molar fraction was also deduced by x ray diffraction (XRD), assuming elastic deformation of the lattice and Vegard's law for the lattice constant. The XRD analysis agreed well with that of EPMA to suggest that the Raman analysis is sensitively affected by lattice distortion due to residual stress. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610525]

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Published Papers - KISODA Kenji