Faculty Profiles - ODA Masato

Published Papers - ODA Masato

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Structural Modification of Weathered Biotite Induced 6by Cs Intercalation

Yumeno Masebo, Mitsunori Honda, Kosetsu Hayakawa, Masato Oda, Chiaki Iino, Rina Yabuta, Hiroyuki Ishii, Masakazu Muraguchi

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY 2025.09

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Development of XAFS Analysis to Elucidate the Structural Change of Weathered Biotite under High Temperature

Kosetsu Hayakawa, Masakazu Muraguchi, Yumeno Masebo, Yohichiro Kojima, Masato Oda, Rina Yabuta, Hiroyuki Ishii, Mitsunori Honda

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY 23 ( 3 ) 290 - 295 2025.07

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Sustainable thermoelectric materials: Utilizing Fukushima weathered biotite via molten salt treatment

Mitsunori Honda, Yui Kaneta, Masakazu Muraguchi, Kosetsu Hayakawa, Masato Oda, Chiaki Iino, Hiroyuki Ishii, Takuya Goto

AIP Advances ( AIP Publishing ) 14 ( 5 ) 2024.05 [Refereed]

This study examines the utilization of Fukushima weathered biotite (WB) as an alternative to conventional thermoelectric materials traditionally derived from rare and toxic substances. WB underwent milling, classification, and subsequent heat treatment via molten-salt treatment to produce crystals exhibiting conductivity akin to semiconductors within the 650–850 °C range. Evaluation of WB and the derived crystal’s electrical conductivity and Seebeck coefficient showcased their viability for high-temperature thermoelectric applications. Consequently, WB attained a dimensionless figure of merit (ZT) of 0.015, signaling its potential as a thermoelectric material that surpasses 650 °C.

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Adiabatic Potential for Conformational Change of VGa–VN Complex Defects in GaN

Jota Nakamura, Masato Oda, Yoshihiro Kangawa （Part： Corresponding author )

physica status solidi (b) ( Wiley ) 2024.03 [Refereed]

Focusing on a VGa–VN complex vacancy defect in GaN, the adiabatic potential for conformational changes of the VGa–VN is investigated using the density functional theory. There are two types of configurations due to the symmetry of the crystal, it is confirmed that there is almost no difference in their stability or electronic state. Using these configurations as the initial and final states, the defect reaction is analyzed when VGa–VN moves using the climbing‐image nudged elastic band method. The reaction barrier for the migration of VGa (VN) is found to be 2.2 (3.3) eV. It is concluded that these reactions occur frequently as GaN is annealed since the atomic diffusion potential barrier is similar to that in other semiconductors. These results suggest that VGa–VN in GaN moves through the crystal as a pair of vacancies by alternately repeating the VGa and the VN migration. These results provide important knowledge for elucidating the microscopic mechanism of the experimentally observed VGa–VN aggregation reaction.

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(ZnO)1-x(InN)x混晶半導体の初期成長過程と電子状態

小田将人, 古木凌太, 篠塚雄三（Part： Lead author,　Corresponding author )

日本結晶成長学会誌 50 ( 1 ) 50-1-06_1 - 50-1-06_11 2023.04 [Refereed] [Invited]

Electronic Structures of Iodine‐Doped Lithium Phthalocyanine Crystals

Masato Oda, Noritake Koike （Part： Lead author,　Last author,　Corresponding author )

physica status solidi (b) ( Wiley ) 260 ( 5 ) 2023.03 [Refereed]

DOI

Theoretical study on adsorption state of chemisorbed oxygen molecule on partially oxidized Si(001) surface

Nao Kadowaki, Masato Oda, Jun Nara

Japanese Journal of Applied Physics ( IOP Publishing ) 60 ( 12 ) 125501 - 125501 2021.11 [Refereed]

DOI

Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation

Nobuyuki Ohtsuka, Masato Oda, Takashi Eshita, Ichiro Tanaka, Chihiro Itoh

Jpn. J. Appl. Phys. 59 SGGK16 2020.02 [Refereed]

Study on the initial growth mechanism of (ZnO)1−x(InN)x using first-principles calculation

Ryota Furuki, Masato Oda, Yuzo Shinozuka

Jpn. J. Appl. Phys 59 SGGK11 2020.02 [Refereed]

Investigation of the electron-phonon interactions around Ga vacancies in GaN and their role in the first stage of defect reactions

Masato Oda （Part： Lead author,　Last author,　Corresponding author )

Jpn. J. Appl. Phys. 58 SCCC16 2019 [Refereed]

Electronic structure of (ZnO)1-x(InN)x alloys calculated by interacting quasi-band theory

R. Furuki, M. Oda, Y. Shinozuka

Japanese Journal of Applied Physics 58 021002 2019 [Refereed]

Electronic structures of a cerasome surface model

Masato Oda （Part： Lead author,　Last author,　Corresponding author )

Jpn. J. Appl. Phys. 58 SIID04 2019 [Refereed]

Electronic Structures of ferrocene encapsulated carbon nanotubes

Sakai A., Oda M., Itoh C., Shinozuka Y.

Meeting Abstracts of the Physical Society of Japan ( The Physical Society of Japan ) 73.1 1818 - 1818 2018

DOI

Electronic structure calculation of Si1-xSnx compound alloy using interacting quasi-band theory

Masato Oda, Yukina Kuroda, Ayaka Kishi, Yuzo Shinozuka （Part： Lead author )

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS ( WILEY-V C H VERLAG GMBH ) 254 ( 2 ) 1600519 2017.02 [Refereed]

We investigate energy band structures of the Si1-xSnx compound alloy in the zincblende structure using interacting quasi-band (IQB) theory. We first extend the IQB theory for four-element compounds and subsequently calculate the electronic structures of the virtual Si1-xSnxSi1-ySny alloy where x=y. Diagonalizing a 20x20 non-Hermitian Hamiltonian matrix using sp(3)s* empirical tight-binding model with parameters obtained for the Si, Sn, and SiSn (zincblende) crystals, we obtain the electronic energy spectrum of the Si1-xSnx alloy for arbitrary x. Comparing the band structures, we reveal that the indirect-direct gap crossover in Si1-xSnx alloys occurs around x=0.67 with E-g=0.87eV. Calculated Sn concentration dependence of energy gaps in Si1-xSnx alloy.

DOI

First-principles calculation of electron-phonon coupling at a Ga vacancy in GaN

Takeshi Tsujio, Masato Oda, Yuzo Shinozuka （Part： Corresponding author )

Japanese Journal of Applied Physics ( Japan Society of Applied Physics ) 56 ( 9 ) 091001 2017 [Refereed]

We investigate the dependence of the electronic band structure on the localized phonon mode at a Ga vacancy in GaN. The electronic states and phonon modes are both calculated using a first-principles method based on the density functional theory. Comparing the calculated electronic band structures and phonon-frequency densities of states of GaN without and with a Ga vacancy, we find that 1) there are localized electronic midgap states closely above the top of the valence band, 2) localized phonon modes appear above the acoustic and optical phonon bands, 3) one of these localized phonon modes contains asymmetric distortions in which one of the four N atoms around a Ga vacancy strongly oscillates, and 4) the localized electronic midgap states strongly couple with the localized asymmetric mode. These results indicate that a Ga vacancy can act as a nonradiative recombination center and may trigger defect reactions in GaN-based devices.

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First-principles study of initial oxidation process of Ge(100) surfaces

Takahiro Mizukoshi, Masato Oda （Part： Last author,　Corresponding author )

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 55 ( 8 ) 08PE03 2016.08 [Refereed]

Stable structures of oxygen atoms inserted into Ge(100) surfaces are investigated by first-principles calculations based on the density functional theory. Comparing the total energies of several models, the most stable structure is realized when oxygen atoms are inserted into the backbond of a lower dimer atom and the next bond along the (100) direction. We calculate the electronic density of states to reveal the origin of the stability. The structure is stable because a dangling bond of the lower dimer atom disappeared to form a four-coordinated structure. We also reveal that the dangling bond disappears from equal-amplitude plots of wave functions. These results are due to the strong electronegativity of the oxygen atom. (C) 2016 The Japan Society of Applied Physics

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Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure

Ayaka Kishi, Masato Oda, Yuzo Shinozuka

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 55 ( 5 ) 051202 2016.05 [Refereed]

This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp(3) tight-binding models. Solving derived quasi-Hamiltonian 24 X 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III-V and II-VI wurtzite alloys: cation-substituted Al1-xGaxN and Ga1-xInxN and anion-substituted CdS1-xSex and ZnO1-xSx. The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character. (C) 2016 The Japan Society of Applied Physics

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19aAR-7 Stable structures of initially oxidized Ge(100) surfaces

Mizukoshi T., Oda M.

Meeting Abstracts of the Physical Society of Japan ( The Physical Society of Japan (JPS) ) 71 2486 - 2486 2016

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Electronic structures changed by lattice distortions at a defect in GaN

Tsujio Takeshi, Oda Masato, Shinozuka Yuzo

Meeting Abstracts of the Physical Society of Japan ( The Physical Society of Japan ) 71 2558 - 2558 2016

GaN中の欠陥反応は、デバイスの性能劣化に重大な影響を与えるがその発生機構は明らかになっていない。先行研究では、バンドギャップ中の孤立電子準位の荷電状態変化によって局在振動モードが増強され、欠陥反応が誘起される機構を簡単なモデルによって示した。本研究では第一原理計算を用い具体的な空孔欠陥を含むGaNモデルの電子状態及び振動状態解析を行った。上記欠陥反応機構が実際に起こりうることを示した。

DOI

Electronic States of III-V and II-VI Alloys Calculated by IQB Theory

Ayaka Kishi, Masato Oda, Yuzo Shinozuka

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) ( IEEE ) 2016 [Refereed]

The electronic states of compound semiconductor (III-V and II-VI) alloys are calculated by the recently proposed interacting quasi-band (IQB) theory. Combining with the sp(3)(s*) empirical tight-binding model, quasi-Hamiltonian matrix facilitates the calculation of the conduction and valence bands of general alloys, A(1-x)B(x)D (AD(1-y)F(y)) for arbitrary concentration x (y) under a unified scheme. The concentration dependence of the electronic bands, including midgap states, is discussed in particular attention to constituent materials, lattice structure (zincblend or wurtzite), and substitution type (anion or cation).

Electronic Structures Calculation of Si1-xSnx Compound Alloy Using Inter-acting Quasi-band Model

Masato Oda, Yukina Kuroda, Ayaka Kishi, Yuzo Shinozuka （Part： Lead author,　Corresponding author )

Interacting quasi-band model for electronic states in compound semiconductor alloys: Zincblende structure

Yuzo Shinozuka, Masato Oda

JAPANESE JOURNAL OF APPLIED PHYSICS ( IOP PUBLISHING LTD ) 54 ( 9 ) 091202 2015.09 [Refereed]

The interacting quasi-band model proposed for electronic states in simple alloys is extended for compound semiconductor alloys with general lattice structures containing several atoms per unit cell. Using a tight-binding model, a variational electronic wave function for quasi-Bloch states yields a non-Hermitian Hamiltonian matrix characterized by matrix elements of constituent crystals and concentration of constituents. Solving secular equations for each k-state yields the alloy's energy spectrum for any type of randomness and arbitrary concentration. The theory is used to address III-V (II-VI) alloys with a zincblende lattice with crystal band structures well represented by the sp(3)s* model. Using the resulting 15 x 15 matrix, the concentration dependence of valence and conduction bands is calculated in a unified scheme for typical alloys: Al1-xGaxAs, GaAs1-xPx, and GaSb1-xPx. Results agree well with experiments and are discussed with respect to the concentration dependence, direct-indirect gap transition, and band-gap-bowing origin. (C) 2015 The Japan Society of Applied Physics

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Evaluation of Stretching Properties of [7]Thiaheterohelicene Framework Called "Molecular Spring" Using AFM Force Measurements and Electrostatic State Calculations

Yoshio Nakahara, Minako Higashi, Ryoto Funayama, Yasuo Horii, Hideji Osuga, Hidefumi Sakamoto, Masato Oda, Shinpei Kado, Keiichi Kimura

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN ( CHEMICAL SOC JAPAN ) 88 ( 4 ) 544 - 550 2015.04 [Refereed]

The stretching properties of a [7]thiaheterohelicene framework, what we call molecular spring, have not been investigated so far, despite a variety of [7]thiaheterohelicene derivatives having very interesting characteristics due to both the rigidity arising from fused benzene rings and the flexibility like a spring originating from helical structure. In this study, a novel [7]thiaheterohelicene derivative, which has a disulfide moiety for bonding to a gold-coated substrate and a carboxy group for reacting with an amino-modified probe tip at each of its end groups, was synthesized in order to elucidate the elasticity of the [7]thiaheterohelicene framework by atomic force microscopy (AFM). The AFM force measurements were carried out using two carboxy-terminated disulfide derivatives with or without a [7]thiaheterohelicene moiety, and the deviation between two kinds of force-extension curves was related to the stretching originating from the [7]thiaheterohelicene framework here. Furthermore, its elasticity was compared to that of biphenyl, which is generally known as a rigid framework, using electrostatic state calculations.

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Electronic states of a lipid membrane reinforced with siloxane bond

Satofumi Yabushita, Masato Oda, Yuzo Shinozuka （Part： Corresponding author )

e-Journal of Surface Science and Nanotechnology ( Surface Science Society of Japan ) 12 112 - 114 2014.03 [Refereed]

We investigate the electronic states of a simple model of a lipid bilayer membrane with a siloxane-bond-reinforced surface using first-principles calculations based on density functional theory. Our model is a simple representation of a cerasome, a material that has proved promising as a drug delivery medium. Analyzing the electronic density of states reveals that there is a mid-gap state originating from the Si-C antibonding state. The existence of an antibonding state at mid-gap indicates that we can selectively excite an electron to this state and thus break up the siloxane network.© 2014 Landes Bioscience.

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Origin of electronic transport of lithium phthalocyanine iodine crystal

Noritake Koike, Masato Oda, Yuzo Shinozuka （Part： Corresponding author )

AIP Conference Proceedings ( American Institute of Physics Inc. ) 1566 183 - 184 2013 [Refereed]

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Energy-Level Alignment, Ionization, and Stability of Bio-Amino Acids at Amino Acid/Si Junctions

Masato Oda, Takashi Nakayama

JAPANESE JOURNAL OF APPLIED PHYSICS ( JAPAN SOCIETY APPLIED PHYSICS ) 47 ( 5 ) 3712 - 3718 2008.05 [Refereed]

The electronic structures of 20 bio-amino acids and amino acid/Si junctions are studied using ab initio calculations. It is shown that the amino acids can be classified into two groups depending on where the highest occupied molecular orbital (HOMO) state is localized. This classification is possible owing to the molecular structural geometry and the constituent atoms in the residue part of amino acids. Moreover, we found that, owing to the hybridization of electronic states between amino acids and Si substrate, the optical transition from the HOMO state of the amino acid to the conduction band states of Si becomes possible at the amino acid/Si interface. This result indicates the possibility of the optical ionization of amino acid by producing amino acid/semiconductor junctions. The present results provide basic data not only for the microscopic understanding of protein electronic structures but also for the electronic design of new protein functions. [DOI: 10.1143/JJAP.47.3712]

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Charge injection from Si substrate into amino acids

Masato Oda, Takashi Nakayama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS ( INST PURE APPLIED PHYSICS ) 45 ( 11 ) 8939 - 8942 2006.11 [Refereed]

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Electronic-state control of amino acids on semiconductor surfaces

M Oda, T Nakayama

APPLIED SURFACE SCIENCE ( ELSEVIER SCIENCE BV ) 244 ( 1-4 ) 627 - 630 2005.05 [Refereed]

Electronic structures of amino acids on the Si(1 1 1) surfaces are investigated by using ab initio Hartree-Fock calculations. It is shown that among various polar amino acids, a histidine is the only one that can be positively ionized when hole carriers are supplied in the Si substrate, by transferring the hole charge from Si substrate to an amino acid. This result indicates that the ionization of a histidine, which will activate the protein functions, can be controlled electrically by producing amino acid/Si junctions. (c) 2004 Published by Elsevier B.V.

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3P327 Control of protein function by injecting carriers from semiconductor

Oda M., Nakayama T.

Seibutsu Butsuri ( The Biophysical Society of Japan General Incorporated Association ) 45 S285 2005

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2P318 Control of protein function on semicon-ductor surfaces

Oda M., Nakayama T.

Seibutsu Butsuri ( The Biophysical Society of Japan General Incorporated Association ) 44 S189 2004

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Published Papers - ODA Masato