Updated on 2024/03/27

写真a

 
OZAKI Nobuhiko
 
Name of department
Faculty of Systems Engineering, Materials Engineering
Job title
Professor
Mail Address
E-mail address
Homepage
External link

Education

  • 1999
    -
    2002

    Osaka University   Graduate School of Science   Department of Physics  

  • 1997
    -
    1999

    Osaka University   Graduate School of Science   Department of Physics  

  • 1993
    -
    1997

    Osaka University   School of Science   Department of Physics  

Degree

  • Ph. D. (Science)

Academic & Professional Experience

  • 2023.04
    -
    Now

    Wakayama University   Faculty of Systems Engineering   材料工学メジャー主任

  • 2023.04
    -
    Now

    Wakayama University   Faculty of Systems Engineering   学部長補佐

  • 2022.04
    -
    Now

    Wakayama University   Faculty of Systems Engineering   Professor

  • 2018.03
    -
    2018.09

    University of Glasgow   School of Engineering   Honorary Research Fellow

  • 2014.08
    -
    2015.01

    University of Sheffield   Department of Electronic and Electrical Engineering   Visiting Academic

  • 2009.10
    -
    2022.03

    Wakayama University   Faculty of Systems Engineering   准教授

  • 2005.04
    -
    2009.09

    University of Tsukuba   大学院数理物質科学研究科   講師

  • 2002.04
    -
    2005.03

    University of Tsukuba   Institute of Materials Science   助手

▼display all

Association Memberships

  • THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS

  • 応用物理学会

  • 日本物理学会

  • Materials Research Society

Research Areas

  • Nanotechnology/Materials / Optical engineering and photonics

  • Nanotechnology/Materials / Crystal engineering

Classes (including Experimental Classes, Seminars, Graduation Thesis Guidance, Graduation Research, and Topical Research)

  • 2022   Physics Experiments B   Specialized Subjects

  • 2022   Physics Experiments A   Specialized Subjects

  • 2022   Practice in Physics   Specialized Subjects

  • 2022   Condensed matter mechanics B   Specialized Subjects

  • 2022   Condensed matter mechanics A   Specialized Subjects

  • 2022   Graduation Research   Specialized Subjects

  • 2022   Graduation Research   Specialized Subjects

  • 2022   Graduation Research   Specialized Subjects

  • 2022   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2022   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2022   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2022   Experiments in Materials Engineering C   Specialized Subjects

  • 2022   Experiments of Materials Engineering B   Specialized Subjects

  • 2022   Experiments of Materials Engineering A   Specialized Subjects

  • 2022   Materials Engineering Seninar   Specialized Subjects

  • 2022   Solid State Physics A   Specialized Subjects

  • 2022   Scientific and Technical English B   Specialized Subjects

  • 2022   Introduction to nanoscale condensed matter physics   Specialized Subjects

  • 2022   Introduction to nanoscale crystal engineering   Specialized Subjects

  • 2022   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2021   Graduation Research   Specialized Subjects

  • 2021   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2021   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2021   Solid State Physics A   Specialized Subjects

  • 2021   Introduction to nanoscale condensed matter physics   Specialized Subjects

  • 2021   Practice in Physics   Specialized Subjects

  • 2021   Experiments in Materials Engineering C   Specialized Subjects

  • 2021   Materials Engineering Seninar   Specialized Subjects

  • 2021   Introduction to nanoscale crystal engineering   Specialized Subjects

  • 2021   Physics Experiments B   Specialized Subjects

  • 2021   Condensed matter mechanics B   Specialized Subjects

  • 2021   Experiments of Materials Engineering B   Specialized Subjects

  • 2021   Physics Experiments A   Specialized Subjects

  • 2021   Condensed matter mechanics A   Specialized Subjects

  • 2021   Graduation Research   Specialized Subjects

  • 2021   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2021   Experiments of Materials Engineering A   Specialized Subjects

  • 2021   Scientific and Technical English B   Specialized Subjects

  • 2020   Graduation Research   Specialized Subjects

  • 2020   Graduation Research   Specialized Subjects

  • 2020   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2020   Experiments of Materials Engineering B   Specialized Subjects

  • 2020   Experiments of Materials Engineering A   Specialized Subjects

  • 2020   Materials Engineering Seninar   Specialized Subjects

  • 2020   Experiments in Materials Engineering C   Specialized Subjects

  • 2020   Introduction to nanoscale condensed matter physics   Specialized Subjects

  • 2020   Introduction to nanoscale crystal engineering   Specialized Subjects

  • 2020   Condensed matter mechanics B   Specialized Subjects

  • 2020   Condensed matter mechanics A   Specialized Subjects

  • 2020   Physics Experiments B   Specialized Subjects

  • 2020   Physics Experiments A   Specialized Subjects

  • 2020   Scientific and Technical English B   Specialized Subjects

  • 2020   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2020   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2020   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2020   Practice in Physics   Specialized Subjects

  • 2019   Scientific and Technical English B   Specialized Subjects

  • 2019   Experiments in Material Science and Chemistry   Specialized Subjects

  • 2019   Experiments in Applied Physics   Specialized Subjects

  • 2019   Advanced Lectures in Applied Physics   Specialized Subjects

  • 2019   Nanoscale Crystal Engineering   Specialized Subjects

  • 2019   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2019   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2019   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2019   Mechanics   Specialized Subjects

  • 2019   Practice in Physics   Specialized Subjects

  • 2019   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2019   Experiments in Physics   Specialized Subjects

  • 2018   Practice in Physics   Specialized Subjects

  • 2018   Scientific and Technical English B   Specialized Subjects

  • 2018   Experiments in Material Science and Chemistry   Specialized Subjects

  • 2018   Experiments in Applied Physics   Specialized Subjects

  • 2018   Advanced Lectures in Applied Physics   Specialized Subjects

  • 2018   Nanoscale Crystal Engineering   Specialized Subjects

  • 2018   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2018   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2018   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2018   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2018   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2018   Experiments in Physics   Specialized Subjects

  • 2017   Experiments in Material Science and Chemistry   Specialized Subjects

  • 2017   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2017   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2017   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2017   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2017   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2017   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2017   Mechanics   Specialized Subjects

  • 2017   Practice in Physics   Specialized Subjects

  • 2017   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2017   Experiments in Physics   Specialized Subjects

  • 2017   Advanced Lectures in Applied Physics   Specialized Subjects

  • 2017   Experiments in Applied Physics   Specialized Subjects

  • 2017   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2017   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2017   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2017   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2017   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2017   Nanoscale Crystal Engineering   Specialized Subjects

  • 2017   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2017   Practice in Physics   Specialized Subjects

  • 2017   Experiments in Physics   Specialized Subjects

  • 2017   Experiments in Material Science and Chemistry   Specialized Subjects

  • 2017   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2017   Mechanics   Specialized Subjects

  • 2016   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2016   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2016   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2016   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2016   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2016   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2016   Experiments in Physics   Specialized Subjects

  • 2016   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2016   Practice in Physics   Specialized Subjects

  • 2016   Mechanics   Specialized Subjects

  • 2015   NA   Liberal Arts and Sciences Subjects

  • 2015   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2015   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2015   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2015   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2015   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2015   Practice in Physics   Specialized Subjects

  • 2015   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2015   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2015   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2015   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2014   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2014   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2014   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2014   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2014   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2014   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2014   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2014   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2014   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2014   Information Processing Ⅰ   Specialized Subjects

  • 2013   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2013   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2013   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2013   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2013   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2013   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2013   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2013   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2013   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2013   Information Processing Ⅰ   Specialized Subjects

  • 2013   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2013   Introductory Seminar   Liberal Arts and Sciences Subjects

  • 2012   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2012   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2012   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2012   Information Processing Ⅰ   Specialized Subjects

  • 2012   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2012   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2012   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2012   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2012   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2012   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2012   Information Processing Ⅰ   Specialized Subjects

  • 2012   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2012   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2012   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2012   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2012   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2012   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2012   NA   Specialized Subjects

  • 2011   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2011   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2011   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2011   Introductory Seminar   Liberal Arts and Sciences Subjects

  • 2011   Practice in Physics   Specialized Subjects

  • 2011   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2011   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2011   Special Lecture Ⅱ for Nano-science   Specialized Subjects

  • 2011   Special Lecture Ⅰ for Nano-science   Specialized Subjects

  • 2011   Information Processing Ⅰ   Specialized Subjects

  • 2011   Introduction to Material Science andChemistry   Specialized Subjects

  • 2011   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2011   NA   Specialized Subjects

  • 2011   Introduction to Material Science andChemistry   Specialized Subjects

  • 2011   Introductory Seminar   Liberal Arts and Sciences Subjects

  • 2011   NA   Specialized Subjects

  • 2011   Practice in Physics   Specialized Subjects

  • 2011   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

▼display all

Satellite Courses

  • 2010   Introductory Course of Science for Everyone   Liberal Arts and Sciences Subjects

Classes

  • 2022   Systems Engineering Global Seminar Ⅱ   Doctoral Course

  • 2022   Systems Engineering Global Seminar Ⅰ   Doctoral Course

  • 2022   Systems Engineering Advanced Research   Doctoral Course

  • 2022   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2022   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2022   Systems Engineering Project SeminarⅡB   Master's Course

  • 2022   Systems Engineering Project SeminarⅡA   Master's Course

  • 2022   Systems Engineering Project SeminarⅠB   Master's Course

  • 2022   Systems Engineering Project SeminarⅠA   Master's Course

  • 2022   Nanomaterials Engineering   Master's Course

  • 2022   Systems Engineering SeminarⅡB   Master's Course

  • 2022   Systems Engineering SeminarⅡA   Master's Course

  • 2022   Systems Engineering SeminarⅠB   Master's Course

  • 2022   Systems Engineering SeminarⅠA   Master's Course

  • 2021   Systems Engineering Global Seminar Ⅱ   Doctoral Course

  • 2021   Systems Engineering Global Seminar Ⅰ   Doctoral Course

  • 2021   Systems Engineering Advanced Research   Doctoral Course

  • 2021   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2021   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2021   Systems Engineering Project SeminarⅡB   Master's Course

  • 2021   Systems Engineering Project SeminarⅡA   Master's Course

  • 2021   Systems Engineering Project SeminarⅠB   Master's Course

  • 2021   Systems Engineering Project SeminarⅠA   Master's Course

  • 2021   Nanomaterials Engineering   Master's Course

  • 2021   Systems Engineering SeminarⅡB   Master's Course

  • 2021   Systems Engineering SeminarⅡA   Master's Course

  • 2021   Systems Engineering SeminarⅠB   Master's Course

  • 2021   Systems Engineering SeminarⅠA   Master's Course

  • 2020   Systems Engineering Global Seminar Ⅱ   Doctoral Course

  • 2020   Systems Engineering Global Seminar Ⅰ   Doctoral Course

  • 2020   Systems Engineering Advanced Research   Doctoral Course

  • 2020   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2020   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2020   Systems Engineering Project SeminarⅡB   Master's Course

  • 2020   Systems Engineering Project SeminarⅡA   Master's Course

  • 2020   Systems Engineering Project SeminarⅠB   Master's Course

  • 2020   Systems Engineering Project SeminarⅠA   Master's Course

  • 2020   Nanomaterials Engineering   Master's Course

  • 2020   Systems Engineering SeminarⅡB   Master's Course

  • 2020   Systems Engineering SeminarⅡA   Master's Course

  • 2020   Systems Engineering SeminarⅠB   Master's Course

  • 2020   Systems Engineering SeminarⅠA   Master's Course

  • 2019   Nanomaterials Engineering   Master's Course

  • 2019   Nanomaterials Engineering   Master's Course

  • 2019   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2019   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2019   Systems Engineering Advanced Research   Doctoral Course

  • 2019   Systems Engineering Advanced Research   Doctoral Course

  • 2019   Systems Engineering SeminarⅡB   Master's Course

  • 2019   Systems Engineering SeminarⅡA   Master's Course

  • 2019   Systems Engineering SeminarⅠB   Master's Course

  • 2019   Systems Engineering SeminarⅠA   Master's Course

  • 2019   Systems Engineering Project SeminarⅡB   Master's Course

  • 2019   Systems Engineering Project SeminarⅡA   Master's Course

  • 2019   Systems Engineering Project SeminarⅠB   Master's Course

  • 2019   Systems Engineering Project SeminarⅠA   Master's Course

  • 2018   Systems Engineering Advanced Research   Doctoral Course

  • 2018   Systems Engineering Advanced Research   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2018   Systems Engineering Project SeminarⅡB   Master's Course

  • 2018   Systems Engineering Project SeminarⅡA   Master's Course

  • 2018   Systems Engineering Project SeminarⅠB   Master's Course

  • 2018   Systems Engineering Project SeminarⅠA   Master's Course

  • 2018   Systems Engineering SeminarⅡB   Master's Course

  • 2018   Systems Engineering SeminarⅡA   Master's Course

  • 2018   Systems Engineering SeminarⅠB   Master's Course

  • 2018   Systems Engineering SeminarⅠA   Master's Course

  • 2018   Nanomaterials Engineering   Master's Course

  • 2018   Nanomaterials Engineering   Master's Course

  • 2017   Systems Engineering Advanced Research   Doctoral Course

  • 2017   Systems Engineering Advanced Research   Doctoral Course

  • 2017   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2017   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2017   Systems Engineering Project SeminarⅡB   Master's Course

  • 2017   Systems Engineering Project SeminarⅡA   Master's Course

  • 2017   Systems Engineering Project SeminarⅠB   Master's Course

  • 2017   Systems Engineering Project SeminarⅠA   Master's Course

  • 2017   Systems Engineering SeminarⅡB   Master's Course

  • 2017   Systems Engineering SeminarⅡA   Master's Course

  • 2017   Systems Engineering SeminarⅠB   Master's Course

  • 2017   Systems Engineering SeminarⅠA   Master's Course

  • 2017   NA   Doctoral Course

  • 2017   NA   Doctoral Course

  • 2017   Systems Engineering Advanced Research   Doctoral Course

  • 2017   Systems Engineering Advanced Research   Doctoral Course

  • 2017   Systems Engineering SeminarⅡB   Master's Course

  • 2017   Systems Engineering SeminarⅡA   Master's Course

  • 2017   Systems Engineering SeminarⅠB   Master's Course

  • 2017   Systems Engineering Project SeminarⅠA   Master's Course

  • 2017   Systems Engineering Project SeminarⅡB   Master's Course

  • 2017   Systems Engineering Project SeminarⅡA   Master's Course

  • 2017   Systems Engineering Project SeminarⅠB   Master's Course

  • 2017   Systems Engineering SeminarⅠA   Master's Course

  • 2017   Nanomaterials Engineering   Master's Course

  • 2017   Nanomaterials Engineering   Master's Course

  • 2016   Systems Engineering Advanced Research   Doctoral Course

  • 2016   Systems Engineering Advanced Research   Doctoral Course

  • 2016   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2016   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2016   Systems Engineering Project SeminarⅡB   Master's Course

  • 2016   Systems Engineering Project SeminarⅡA   Master's Course

  • 2016   Systems Engineering Project SeminarⅠB   Master's Course

  • 2016   Systems Engineering Project SeminarⅠA   Master's Course

  • 2016   Systems Engineering SeminarⅡB   Master's Course

  • 2016   Systems Engineering SeminarⅡA   Master's Course

  • 2016   Systems Engineering SeminarⅠB   Master's Course

  • 2016   Systems Engineering SeminarⅠA   Master's Course

  • 2016   Nanomaterials Engineering   Master's Course

  • 2016   Nanomaterials Engineering   Master's Course

  • 2015   Systems Engineering Advanced Seminar Ⅱ  

  • 2015   Systems Engineering Advanced Seminar Ⅰ  

  • 2015   Systems Engineering Advanced Research  

  • 2015   Systems Engineering SeminarⅡA  

  • 2015   Systems Engineering SeminarⅠA  

  • 2015   Systems Engineering Project SeminarⅡA  

  • 2015   Systems Engineering Project SeminarⅠA  

  • 2015   Nanomaterials Engineering  

  • 2015   Nanomaterials Engineering  

  • 2015   Systems Engineering Advanced Seminar Ⅱ  

  • 2015   Systems Engineering Advanced Seminar Ⅰ  

  • 2015   Systems Engineering Advanced Research  

  • 2015   Systems Engineering SeminarⅡB  

  • 2015   Systems Engineering SeminarⅠB  

  • 2015   Systems Engineering Project SeminarⅡB  

  • 2015   Systems Engineering Project SeminarⅠB  

  • 2014   Systems Engineering Global Seminar Ⅰ  

  • 2014   Systems Engineering Global Seminar Ⅰ  

  • 2014   Systems Engineering Advanced Research  

  • 2014   Systems Engineering Advanced Research  

  • 2014   Systems Engineering Advanced Seminar Ⅱ  

  • 2014   Systems Engineering Advanced Seminar Ⅱ  

  • 2014   Systems Engineering Advanced Seminar Ⅰ  

  • 2014   Systems Engineering Advanced Seminar Ⅰ  

  • 2014   Systems Engineering Project SeminarⅡB  

  • 2014   Systems Engineering Project SeminarⅡA  

  • 2014   Systems Engineering Project SeminarⅠB  

  • 2014   Systems Engineering Project SeminarⅠA  

  • 2014   Nanomaterials Engineering  

  • 2014   Nanomaterials Engineering  

  • 2014   Systems Engineering SeminarⅡB  

  • 2014   Systems Engineering SeminarⅡA  

  • 2014   Systems Engineering SeminarⅠB  

  • 2014   Systems Engineering SeminarⅠA  

  • 2013   Systems Engineering Advanced Research  

  • 2013   Systems Engineering Advanced Research  

  • 2013   Systems Engineering Advanced Seminar Ⅱ  

  • 2013   Systems Engineering Advanced Seminar Ⅱ  

  • 2013   Systems Engineering Advanced Seminar Ⅰ  

  • 2013   Systems Engineering Advanced Seminar Ⅰ  

  • 2013   Systems Engineering Project SeminarⅡB  

  • 2013   Systems Engineering Project SeminarⅡA  

  • 2013   Systems Engineering Project SeminarⅠB  

  • 2013   Systems Engineering Project SeminarⅠA  

  • 2013   Nanomaterials Engineering  

  • 2013   Nanomaterials Engineering  

  • 2013   Systems Engineering SeminarⅡB  

  • 2013   Systems Engineering SeminarⅡA  

  • 2013   Systems Engineering SeminarⅠB  

  • 2013   Systems Engineering SeminarⅠA  

  • 2012   Systems Engineering Advanced Seminar Ⅱ  

  • 2012   Systems Engineering Advanced Seminar Ⅰ  

  • 2012   Systems Engineering Advanced Research  

  • 2012   Systems Engineering SeminarⅡA  

  • 2012   Systems Engineering SeminarⅠA  

  • 2012   Systems Engineering Project SeminarⅡA  

  • 2012   Systems Engineering Project SeminarⅠA  

  • 2012   Nanomaterials Engineering  

  • 2012   Nanomaterials Engineering  

  • 2012   Systems Engineering Advanced Seminar Ⅱ  

  • 2012   Systems Engineering Advanced Seminar Ⅰ  

  • 2012   Systems Engineering Advanced Research  

  • 2012   Systems Engineering SeminarⅡB  

  • 2012   Systems Engineering SeminarⅠB  

  • 2012   Systems Engineering Project SeminarⅡB  

  • 2012   Systems Engineering Project SeminarⅠB  

  • 2011   Systems Engineering Project SeminarⅡB  

  • 2011   Systems Engineering Project SeminarⅡA  

  • 2011   Systems Engineering Project SeminarⅠB  

  • 2011   Systems Engineering Project SeminarⅠA  

  • 2011   Systems Engineering Advanced Research  

  • 2011   Systems Engineering Advanced Research  

  • 2011   NA  

  • 2011   NA  

  • 2011   Systems Engineering Advanced Seminar Ⅱ  

  • 2011   Systems Engineering Advanced Seminar Ⅱ  

  • 2011   Systems Engineering Advanced Seminar Ⅰ  

  • 2011   Systems Engineering Advanced Seminar Ⅰ  

  • 2011   Nanomaterials Engineering  

  • 2011   Nanomaterials Engineering  

  • 2010   Nanomaterials Engineering   Master's Course

  • 2010   Nanomaterials Engineering   Master's Course

  • 2009   NA   Master's Course

  • 2009   NA   Master's Course

  • 2009   NA   Master's Course

  • 2009   NA   Master's Course

▼display all

Papers and Awards Received Related to Improving Education

  • 2011   グッドレクチャー賞   和歌山大学システム工学部FD委員会   Domestic

Research Interests

  • NIR light source

  • フォトニック結晶

  • molecular beam epitaxy

  • crystal engineering

  • 量子ドット

  • 光デバイス

  • Photonic Crystal

  • Quantum dot

  • OCT

▼display all

Published Papers

  • Proposal and numerical verification of an ultrasmall terahertz source using integrated photonic crystal waveguides for highly efficient differential frequency generation

    Yota Koyama, Hisaya Oda, Naoki Ikeda, Yoshimasa Sugimoto, Nobuhiko Ozaki (Part: Last author, Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  62 ( SG ) SG1033 1-5   2023.03  [Refereed]

     View Summary

    We propose and numerically investigate integrated photonic crystal waveguides (PhC-WGs) formed in a semiconductor slab to realize an ultrasmall and highly efficient terahertz (THz) wave source. The structure consists of a straight PhC-WG with low-group-velocity and low-dispersion (LVLD) for efficient difference frequency generation (DFG) connected to two PhC-WGs to introduce two fundamental lights into the LVLD PhC-WG. The fundamental light propagating through each PhC-WG designed to enhance their electric fields by the slow-light effect is efficiently coupled to the LVLD PhC-WG owing to the reduced refractive index differences at the boundaries of the heterostructures. The DFG from the two fundamental lights was numerically simulated, and a temporal intensity oscillation corresponding to the difference in frequency was clearly observed. By comparing the DFG intensities of the integrated structures with an LVLD PhC-WG and a strip WG, the estimated DFG intensity from the LVLD PhC-WG was more than 100 times higher than that from the strip WG. These results indicate the effectiveness of the proposed heterostructure in the application of a highly efficient THz source with an ultrasmall footprint compared with conventional materials.

    DOI

  • Broadband optical wavelength conversion through four-wave mixing in W3-type AlGaAs photonic crystal waveguides

    Hisaya Oda, Youhei Hosokawa, Kazuki Hayashi, Nobuhiko Ozaki, Naoki Ikeda, Yoshimasa Sugimoto

    Applied Physics Express ( IOP Publishing )  16 ( 2 ) 022004 1-4   2023.02  [Refereed]

     View Summary

    We realized a wide-band wavelength conversion method through four-wave mixing in W3-type AlGaAs photonic crystal waveguides. AlGaAs exhibits a large third-order nonlinearity. Furthermore, because of its large bandgap, two-photon absorption can be avoided in the 1550-nm range. A four-wave mixing efficiency of −9.03 dB was obtained for a pump peak power of 7 W. Furthermore, by utilizing the two even guided bands of the W3-type photonic crystal waveguide, a conversion bandwidth greater than 38 nm was achieved with a conversion efficiency of −22 dB.

    DOI

  • In-situ estimation of emission wavelength of embedded InAs QDs using RHEED intensity measurements

    Nobuhiko Ozaki, Daigo Ikuno (Part: Lead author, Corresponding author )

    Journal of Crystal Growth ( Elsevier BV )  588   126657 1-4   2022.06  [Refereed]

     View Summary

    We propose a method for estimating the emission wavelength of self-assembled InAs quantum dots (QDs) embedded in a capping layer using reflection high-energy electron diffraction (RHEED) intensity measurements. As QDs are capped with a Ga(In)As layer, the RHEED intensity of QDs decays, and the decay degree depends on the growth conditions of capping. The RHEED intensity decay was analyzed, and a relationship between the decay degree and photoluminescence peak energy of embedded QDs was determined. This relationship can be used to predict the emission wavelength of embedded QDs during capping, which is particularly useful for QD-based optical device fabrication.

    DOI

  • Near-infrared dual-wavelength surface-emitting light source using InAs quantum dots resonant with vertical cavity modes

    Jin Oshima, Nobuhiko Ozaki, Hisaya Oda, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg (Part: Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  61 ( SD ) SD1003 1-5   2022.03  [Refereed]

     View Summary

    We developed a compact dual-wavelength surface-emitting light source using InAs quantum dots (QDs) embedded in a vertical cavity (VC). The VC was designed to possess two optical cavity modes that resonate with the discrete emission lines of the QDs. The fabricated light source exhibited significant enhancements in the vertical light emission corresponding to the VC modes. In addition, the light source demonstrated selectivity to the enhanced emission wavelengths with changes in temperature. Compared to conventional dual-wavelength vertical external cavity surface-emitting lasers, these QD-based dual-wavelength emission devices allow for the realization of simple structures because the InAs QDs act as dual-light-emitting materials. These results can be applied to simple dual-wavelength surface-emitting light sources.

    DOI

  • Emission wavelength control of InAs/GaAs quantum dots using an As2 source for near-infrared broadband light source applications

    Nobuhiko Ozaki, Yuma Hayashi, Shunsuke Ohkouchi, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg (Part: Lead author, Corresponding author )

    Applied Physics Express ( IOP Publishing )  14 ( 5 ) 055501 1-6   2021.04  [Refereed]

     View Summary

    Herein, we report an emission wavelength control technique for self-assembled InAs quantum dots (QDs) grown via molecular beam epitaxy using an As2 source (As2-QDs). The As2-QDs exhibited photoluminescence with a shorter center wavelength and larger bandwidth than those of the QDs grown using an As4 source. In addition, the emission center wavelength could be controlled by adjusting the time between the growth and capping of the As2-QDs. We utilized the multilayer stack of emission-wavelength-controlled As2-QDs to fabricate an electrically-driven light source and demonstrated its broadband (approximately 130 nm) emission in the 1–1.3 μm wavelength range.

    DOI

  • 1.1 μm waveband tunable laser using emission-wavelength-controlled InAs quantum dots for swept-source optical coherence tomography applications

    Toshiya Tsuji, Nobuhiko Ozaki, Sho Yamauchi, Katsuya Onoue, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, David T. D. Childs, and Richard A. Hogg (Part: Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  60 ( SB ) SBBE02 1-6   2021.02  [Refereed]

     View Summary

    In this study, an optical gain chip using emission-wavelength-controlled self-assembled InAs quantum dots (QDs) was developed for swept-source optical coherence tomography (SS-OCT) applications. The optical characterizations indicated that the QDs emission wavelength and optical gain spectra were controlled in the 1.1μm waveband by optimizing the QDs growth conditions. This waveband is useful for obtaining a large imaging depth of OCT because of an optimal balance between absorption and scattering in biological samples. In addition, continuous tunable lasing in the waveband was achieved by introducing the QD-based gain chip into a grating-coupled external cavity. This tunable laser was introduced into an SS-OCT setup, and the point spread function (PSF) was evaluated. The PSF position was observed to vary according to the optical path length differences. These results demonstrate the feasibility of the application of emission-wavelength-controlled QDs for SS-OCT.

    DOI

  • Bandwidth enhancement in an InGaN/GaN three-section superluminescent diode for optical coherence tomography

    Graham R. Goldberg, Dae-Hyun Kim, Richard J. E. Taylor, David T. D. Childs, Pavlo Ivanov, Nobuhiko Ozaki, Kenneth L. Kennedy, Kristian M. Groom, Yukihiro Harada, and Richard A. Hogg

    Applied Physics Letters ( AIP Publishing )  117 ( 6 ) 061106 1-5   2020.08  [Refereed]

     View Summary

    In this paper, the optoelectronic properties of InGaN-based blue (430 nm) superluminescent light-emitting diodes with a multi-section, three contact design are reported. The bias conditions of the rear absorber section and gain sections are explored in terms of enhancing and maximizing spectral bandwidth. We demonstrate that broader emission can be obtained with a short circuit, rather than an open circuit absorber section, and with two active regions at different current densities as opposed to a single active contact. Under optimal drive conditions, a −3 dB linewidth of 20 nm is obtained at 430 nm. Analysis of the device emission spectrum indicates that an axial resolution of ∼3.4 μm may be obtained in an optical coherence tomography system.

    DOI

  • Numerical investigation of highly efficient and tunable terahertz-wave generation using a low-group-velocity and low-dispersion two-dimensional GaAs photonic crystal waveguide

    Teruyuki Nakahama, Nobuhiko Ozaki, Hisaya Oda, Naoki Ikeda, and Yoshimasa Sugimoto (Part: Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  59 ( 9 ) 090903 1-7   2020.08  [Refereed]

    DOI

  • Development of a broadband superluminescent diode based on self-assembled InAs quantum dots and demonstration of high-axial-resolution optical coherence tomography imaging

    Nobuhiko Ozaki, Sho Yamauchi, Yuma Hayashi, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, Kenji Furuki, Yoichi Oikawa, Kunio Miyaji, David T D Childs, and Richard A Hogg (Part: Lead author, Corresponding author )

    Journal of Physics D: Applied Physics ( IOP Publishing )  52 ( 22 ) 225105 1-9   2019.05  [Refereed]

    DOI

  • Tunable external cavity laser diode based on wavelength controlled self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm wavelength band

    Nobuhiko Ozaki, David T. D. Childs, Aleksandr Boldin, Daigo Ikuno, Katsuya Onoue, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg (Part: Lead author, Corresponding author )

    SPIE Proceedings ( SPIE )  10939   1093911 1-6   2019.03  [Refereed]

    DOI

  • Preparation of Ag2Se QDs with excellent aqueous dispersion stability by organic coating with aqueous ATRP

    Yoshio Nakahara, Yuki Kunitsu, Nobuhiko Ozaki, Mutsuo Tanaka, Setsuko Yajima

    Polymer Bulletin ( Springer Science and Business Media LLC )  76 ( 9 ) 4753 - 4768   2018.12  [Refereed]

    DOI

  • Non-destructive and non-contact measurement of semiconductor optical waveguide using optical coherence tomography with a visible broadband light source

    Kazumasa Ishida, Nobuhiko Ozaki, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto (Part: Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  57 ( 8S2 ) 08PE03 1-5   2018.08  [Refereed]

    DOI

  • Reflection Spectra from SiC Substrate with Circular-Slot Antennas and Possible Interaction between Surface-Plasmon Polaritons and Surface-Phonon Polaritons

    N. Umemori, K. Kasahara, T. Yaji, N. Ozaki, N. Ikeda, Y. Sugimoto

    2018 12th International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials) ( IEEE )    204 - 206   2018.08

    DOI

  • Non-destructive inspection of semiconductor optical waveguide using optical coherence tomography with visible broadband light source

    Kazumasa Ishida, Nobuhiko Ozaki, Naoki Ikeda, Yoshimasa Sugimoto

    22nd Microoptics Conference, MOC 2017 ( Institute of Electrical and Electronics Engineers Inc. )  2017-   242 - 243   2018.01  [Refereed]

     View Summary

    Non-destructive inspection of semiconductor optical waveguides was demonstrated using optical coherence tomography with a visible broadband light source (vis-OCT). Comparisons of measured height and width between the vis-OCT, stylus profiler, and cross-sectional scanning electron microscopy indicated the effectiveness of the vis-OCT as a high-resolution, non-destructive, and non-contact measurement method.

    DOI

  • Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

    Nobuhiko Ozaki, Shingo Kanehira, Yuma Hayashi, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg (Part: Lead author, Corresponding author )

    Journal of Crystal Growth ( Elsevier BV )  477   230 - 234   2017.11  [Refereed]

    DOI

  • Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

    Graham R. Goldberg, Aleksandr Boldin, Sophia M. L. Andersson, Pavlo Ivanov, Nobuhiko Ozaki, Richard J. E. Taylor, David T. D. Childs, Kristian M. Groom, Kenneth L. Kennedy, Richard A. Hogg

    IEEE Journal of Selected Topics in Quantum Electronics ( Institute of Electrical and Electronics Engineers (IEEE) )  23 ( 6 ) 2000511 1-11   2017.07  [Refereed]

    DOI

  • Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers

    Timothy S. Roberts, Benjamin J. Stevens, Edmund Clarke, Ian Tooley, Jonathan Orchard, Ian Farrer, David T. D. Childs, Nasser Babazadeh, Nobuhiko Ozaki, David Mowbray, Richard A. Hogg

    IEEE Journal of Selected Topics in Quantum Electronics ( Institute of Electrical and Electronics Engineers (IEEE) )  23 ( 6 ) 1901208 1-8   2017.05  [Refereed]

    DOI

  • Ultra-small near-infrared multi-wavelength light source using a heterojunction photonic crystal waveguide and self-assembled InAs quantum dots

    Sho Uchida, Nobuhiko Ozaki, Teruyuki Nakahama, Hisaya Oda, Naoki Ikeda, Yoshimasa Sugimoto (Part: Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  56 ( 5 ) 050303 1-4   2017.05  [Refereed]

    DOI

  • Gallium nitride light sources for optical coherence tomography

    Graham R. Goldberg, Pavlo Ivanov, Nobuhiko Ozaki, David T. D. Childs, Kristian M. Groom, Kenneth L. Kennedy, Richard A. Hogg

    SPIE Proceedings ( SPIE )  10104   101041X 1-7   2017.02  [Refereed]

    DOI

  • High-resolution and nondestructive profile measurement by spectral-domain optical coherence tomography with a visible broadband light source for optical-device fabrication

    Tsuyoshi Nishi, Nobuhiko Ozaki, Yoichi Oikawa, Kunio Miyaji, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto (Part: Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  55 ( 8S3 ) 08RE05 1-5   2016.08  [Refereed]

    DOI

  • Emission wavelength variation of InAs quantum dots grown on GaAs using As2 molecules in molecular beam epitaxy

    Yuma Hayashi, Nobuhiko Ozaki, Shunsuke Ohkouchi, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto (Part: Corresponding author )

    2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] ( IEEE )    1 - 2   2016.06  [Refereed]

    DOI

  • Operation of an InAs quantum-dot embedded GaAs photonic crystal slab waveguide laser by using two-photon pumping for photonics integrated circuits

    H. Oda, A. Yamanaka, N. Ozaki, N. Ikeda, Y. Sugimoto

    AIP Advances ( AIP Publishing )  6 ( 6 ) 065215 1-6   2016.06  [Refereed]

    DOI

  • Electrically Driven Near-Infrared Broadband Light Source with Gaussian-Like Spectral Shape Based on Multiple InAs Quantum Dots

    Takuma YASUDA, Nobuhiko OZAKI, Hiroshi SHIBATA, Shunsuke OHKOUCHI, Naoki IKEDA, Hirotaka OHSATO, Eiichiro WATANABE, Yoshimasa SUGIMOTO, Richard A. HOGG (Part: Corresponding author )

    IEICE Transactions on Electronics ( Institute of Electronics, Information and Communications Engineers (IEICE) )  E99.C ( 3 ) 381 - 384   2016.03  [Refereed]

    DOI

  • Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

    Nobuhiko Ozaki, David T. D. Childs, Jayanta Sarma, Timothy S. Roberts, Takuma Yasuda, Hiroshi Shibata, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg (Part: Lead author, Corresponding author )

    Journal of Applied Physics ( AIP Publishing )  119 ( 8 ) 083107 1-7   2016.02  [Refereed]

    DOI

  • Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography Applications

    Graham R. Goldberg, Pavlo Ivanov, Nobuhiko Ozaki, David T. D. Childs, Kristian M. Groom, Kenneth L. Kennedy, Richard A. Hogg

    2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) ( IEEE )    2016  [Refereed]

     View Summary

    The role of biasing of absorber sections in multi-contact GaN similar to 400nm SLEDs is discussed. We go on to assess such devices for OCT applications. Analysis of the SLED emission spectrum allows an axial resolution of 6.0 mu m to be deduced in OCT applications.

  • Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm

    Shigehiro Kitamura, Masaya Senshu, Toshio Katsuyama, Yuji Hino, Nobuhiko Ozaki, Shunsuke Ohkouchi, Yoshimasa Sugimoto, Richard A Hogg (Part: Corresponding author )

    Nanoscale Research Letters ( Springer Science and Business Media LLC )  10   231 1-6   2015.05  [Refereed]

     View Summary

    Abstract

    We investigated optical properties of In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam epitaxy. By using the In-flush technique for setting the height of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μm regime, which can be utilized as a non-invasive and deeply penetrative probe for biological and medical imaging systems. The controlled emission exhibited a broadband spectrum comprising multiple peaks with an interval of approximately 30 meV. We examined the origin of the multiple peaks using spectral and time-resolved photoluminescence, and concluded that it is attributed to monolayer step fluctuations in the height of the In-flushed QDs. This feature can be advantageous for realizing a broadband light source centered at the ~1 μm regime, which is especially suitable for the non-invasive cross-sectional biological and medical imaging system known as optical coherence tomography.

    DOI

  • Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

    Hiroshi Shibata, Nobuhiko Ozaki, Takuma Yasuda, Shunsuke Ohkouchi, Naoki Ikeda, Hirotaka Ohsato, Eiichiro Watanabe, Yoshimasa Sugimoto, Kenji Furuki, Kunio Miyaji, Richard A. Hogg (Part: Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  54 ( 4S ) 04DG07 1-5   2015.04  [Refereed]

    DOI

  • Spectral and temporal photoluminescence behavior of colloidal PbS quantum dots

    S. Kitamura, M. Senshu, H. Tokushige, T. Katsuyama, N. Ozaki, I. Tanaka, Y. Sugimoto

    Superlattices and Microstructures ( Elsevier BV )  79   123 - 134   2015.03  [Refereed]

    DOI

  • SPECTRAL-DOMAIN OPTICAL COHERENCE TOMOGRAPHY WITH A WHITE LIGHT DEVELOPED FOR OPTICAL DEVICE FABRICATION

    T. Nishi, N. Ozaki, H. Ohsato, E. Watanabe, N. Ikeda, Y. Sugimoto (Part: Corresponding author )

    2015 20TH MICROOPTICS CONFERENCE (MOC) ( IEEE )    180 - 181   2015  [Refereed]

     View Summary

    We developed a spectral-domain optical coherence tomography (SD-OCT) with a white light source for high-resolution, non-destructive profile imaging. By using a 625-nm-centered white light (260 nm bandwidth), 0.69 mu m of axial resolution was achieved. This resolution is suitable for the inspection of thin photoresists (e.g., 1-2 mu m) coated semiconductor wafers, which are used for optical device fabrication.

    DOI

  • Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

    Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Takuma Yasuda, Shunsuke Ohkouchi, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, Edmund Clarke, Richard A. Hogg (Part: Lead author, Corresponding author )

    Nanomaterials and Nanotechnology ( SAGE Publications )  4   26 1-17   2014.09  [Refereed]  [Invited]

     View Summary

    Near-infrared (NIR) light sources are widely utilized in biological and medical imaging systems owing to their long penetration depth in living tissues. In a recently developed biomedical non-invasive cross-sectional imaging system, called optical coherence tomography (OCT), a broadband spectrum is also required, because OCT is based on low coherence interferometry. To meet these operational requirements, we have developed a NIR broadband light source by integrating self-assembled InAs quantum dots (QDs) grown on a GaAs substrate (InAs/GaAs QDs) with different emission wavelengths. In this review, we introduce the developed light sources and QD growth techniques that are used to control the emission wavelength for broadband emission spectra with center wavelengths of 1.05 and 1.3 μm. Although the strain-induced Stranski-Krastanov (S-K) mode-grown InAs/GaAs QDs normally emit light at a wavelength of around 1.2 μm, the central emission wavelength can be controlled to be between 0.9–1.4 μm by the use of an In-flush technique, the insertion of a strain-reducing layer (SRL) and bi-layer QD growth techniques. These techniques are useful for applying InAs/GaAs QDs as NIR broadband light sources and are especially suitable for our proposed spectral-shape-controllable broadband NIR light source. The potential of this light source for improving the performance of OCT systems is discussed.

    DOI

  • Alcohol additive effect in hydrogen generation from water with carbon by photochemical reaction

    Kosuke Maeda, Nobuhiko Ozaki, Ikuko Akimoto

    Japanese Journal of Applied Physics ( IOP Publishing )  53 ( 5S1 ) 05FZ03 - 05FZ03   2014.03  [Refereed]

    DOI

  • Near-infrared superluminescent diode using stacked self-assembled InAs quantum dots with controlled emission wavelengths

    Nobuhiko Ozaki, Takuma Yasuda, Shunsuke Ohkouchi, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg (Part: Lead author, Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  53 ( 4S ) 04EG10 - 04EG10   2014.02  [Refereed]

    DOI

  • Growth and Optical Characterizations of InAs-QDs Emitting at 1μm with a Broadband Spectrum for a Light Source for Biomedical Optical Coherence Tomography

    Nobuhiko OZAKI, Yuji HINO, Shunsuke OHKOUCHI, Naoki IKEDA, Yoshimasa SUGIMOTO (Part: Lead author, Corresponding author )

    Journal of the Society of Materials Science, Japan ( Society of Materials Science, Japan )  62 ( 11 ) 679 - 682   2013.11  [Refereed]

    DOI

  • Broadband emission centered at ~1 µm with a Gaussian-like spectrum by stacking In-flushed QD layers

    Nobuhiko Ozaki, Yuji Hino, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto (Part: Lead author, Corresponding author )

    Physica Status Solidi C: Current Topics in Solid State Physics ( WILEY-V C H VERLAG GMBH )  10 ( 11 ) 1361 - 1364   2013.10  [Refereed]

     View Summary

    We have grown a stack of In-flushed InAs quantum dot (QD) layers to realize a broadband emission centered at similar to 1 mu m with a Gaussian-like spectrum as a light source for optical coherence tomography (OCT). The In-flush process, which enables control of the height of the QD, was optimized to control the emission wavelength and intensity of self-assembled InAs/GaAs QDs. A partial capping layer of GaAs was deposited on as-grown InAs/GaAs QDs with various thicknesses (d(cap)), and a rapid annealing of the sample was executed with the proper annealing temperature. By optimizing d(cap) and the annealing temperature for each QD layer, a broadband Gaussian-like spectrum with a 102-nm-bandwidth was obtained. The coherence function of the emission spectrum exhibits a 4.5-mu m axial resolution for OCT images without distinct side lobes. These results demonstrate the effectiveness of the In-flushed QDs as a light source to obtain high-quality OCT images.

    DOI

  • Hydrogen generation by laser irradiation of carbon powder in water

    Ikuko Akimoto, Kousuke Maeda, Nobuhiko Ozaki

    Journal of Physical Chemistry C ( American Chemical Society ({ACS}) )  117 ( 36 ) 18281 - 18285   2013.09  [Refereed]

     View Summary

    We report the photochemical activity of carbon powder in the generation of hydrogen from water by laser irradiation, without any electrodes and photocatalysts. The gas was obtained by laser irradiation in the VIS-NIR range and was dependent nonlinearly on the laser power density. From a gas component analysis and a repeated irradiation experiment, it was found that the carbon powder was oxidized and acted as a sacrificial reagent in the photochemical hydrogen generation. In addition, a highly carbonized charcoal, known as Bincho-tan, was found to effectively work for the hydrogen generation. © 2013 American Chemical Society.

    DOI

  • Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05 μm using In-flush technique for broadband near-infrared light source

    Yuji Hino, Nobuhiko Ozaki, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto (Part: Corresponding author )

    Journal of Crystal Growth ( Elsevier B.V. )  378   501 - 505   2013.09  [Refereed]

     View Summary

    Self-assembled InAs quantum dots (QDs) emitting at around 1.05 μm in wavelength were grown on a GaAs substrate by using the In-flush technique. A rapid annealing (In-flush) process after the growth of the GaAs capping layer, which partially covers InAs-QDs, reduces the height of the InAs-QDs to the thickness of the capping layer. Using this approach, the emission wavelengths of the QDs were precisely controlled by varying the thickness of the capping GaAs layer. The central emission wavelength was suitably controlled in the range of approximately 1.22-0.95 μm. This method enables the realization of a broadband 1.05 μm light source with a bandwidth of beyond 200 nm via a combination of In-flushed QDs. Such a broadband light source of 1.05 μm in wavelength is applicable to optical coherence tomography (OCT), thereby enabling high-resolution and large penetration depth in the OCT images. In addition, we found that a higher emission intensity of the In-flushed QDs can be obtained by reducing the annealing temperature of the In-flush process. © 2013 Elsevier B.V. All rights reserved.

    DOI

  • Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 mu m by using quantum dot bi-layer for broadband light source

    N. Ozaki, Y. Nakatani, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, E. Clarke, R. A. Hogg (Part: Lead author, Corresponding author )

    Journal of Crystal Growth ( ELSEVIER SCIENCE BV )  378   553 - 557   2013.09  [Refereed]

     View Summary

    We have grown bi-layer InAs quantum dots (QDs) on GaAs substrates for extending the emission wavelength of InAs/GaAs QDs beyond 1.3 mu m. The QD bi-layer, which comprises two QDs layers (seed- and active-QDs) separated with a GaAs spacer layer of 10 nm in thickness, exhibits light emission from active-QDs with longer wavelength. An enlargement of the active-QDs occurred by optimizing several growth parameters: growth temperature of seed-QDs, amount of InAs supplied for seed- and active-QDs layers. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 mu m from 1.2 mu m. These results indicate that the QD bi-layer can be applied to a broadband light source exhibiting an emission spectrum centered at 1.3 mu m with a bandwidth of 200 nm. (c) 2013 Elsevier B.V. All rights reserved.

    DOI

  • Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

    Nobuhiko Ozaki, Koichi Takeuchi, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Hisaya Oda, Kiyoshi Asakawa, Richard A. Hogg (Part: Lead author, Corresponding author )

    Applied Physics Letters ( AIP Publishing )  103 ( 5 ) 051121 1-4   2013.07  [Refereed]

    DOI

  • Enhancement upconversion luminescence in InAs-quantum dots embedded GaAs photonic-crystal slab line-defect waveguide

    H. Oda, A. Yamanaka, N. Ozaki, N. Ikeda, Y. Sugimoto

    2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 ( IEEE Computer Society )    2013  [Refereed]

     View Summary

    Photonic crystals are very suitable for controlling radiation field and propagation characterization of light. As an important application, it is ultra compact and ultrafast optical integrated circuits (OIC) based on photonic crystals slab waveguide (PhC-WG) composing of the line-defects [1, 2]. The PhC-WG is also attractive for laser lasing, because very small group velocity of near the Brillouin zone (BZ) edge should enhance interactions between the radiation field and matter. Indeed, the lasing spectrum has been observed from optically pumped InAs-quantum dots (InAs-QDs) embedded PhC-WG [3]. And a small group velocity (Vg) in the PhC-WG gives rise to enhancement intensity and, therefore, is advantageous to nonlinear optical effect. In this work, we present the 1.55 μm to 1.3 μm upconversion luminescence (UL) based on two-photon absorption in InAs-QDs GaAs PhC-WG. © 2013 IEEE.

    DOI

  • Size dependent optical properties of quinacridonequinone nanoparticles prepared by liquid laser ablation in water

    Ikuko Akimoto, Masahiro Ohata, Nobuhiko Ozaki, Ping Gu

    Chemical Physics Letters ( Elsevier BV )  552   102 - 107   2012.11  [Refereed]

    DOI

  • Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics

    Kiyoshi ASAKAWA, Yoshimasa SUGIMOTO, Naoki IKEDA, Daiju TSUYA, Yasuo KOIDE, Yoshinori WATANABE, Nobuhiko OZAKI, Shunsuke OHKOUCHI, Tsuyoshi NOMURA, Daisuke INOUE, Takayuki MATSUI, Atsushi MIURA, Hisayoshi FUJIKAWA, Kazuo SATO

    IEICE Transactions on Electronics ( Institute of Electronics, Information and Communications Engineers (IEICE) )  E95-C ( 2 ) 178 - 187   2012.02  [Refereed]  [Invited]

    DOI

  • Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas

    Nobuhiko OZAKI, Koichi TAKEUCHI, Shunsuke OHKOUCHI, Naoki IKEDA, Yoshimasa SUGIMOTO, Kiyoshi ASAKAWA, Richard A. HOGG (Part: Lead author, Corresponding author )

    IEICE Transactions on Electronics ( Institute of Electronics, Information and Communications Engineers (IEICE) )  E95-C ( 2 ) 247 - 250   2012.02  [Refereed]

    DOI

  • Formation of nanoparticles of organic molecules by liquid laser ablation

    Ikuko Akimoto, Masahiro Ohata, Nobuhiko Ozaki, Gu Ping

    Materials Research Society Symposium Proceedings   1455   55 - 60   2012  [Refereed]

     View Summary

    We carried out laser ablation of three organic molecules, rubrene (Rb), Oralith Brilliant Pink R (BP) and quinacridonequinone (QQ) in a poor solvent, water. As a result, nanoparticles of BP and QQ were formed, but those of Rb were not formed because of photodissociation. For a rigid molecule, QQ, optical properties of colloidal solutions were investigated in relation to the size of the included nanoparticles. A linear correlation between the blue shift of the absorption peak energy and the decrease in the diameter of the nanoparticles was found, indicating that the nanoparticle diameter can be easily estimated from the absorption spectrum of a colloidal solution. From the solution, a nanoparticle film was fabricated on an electrode by the electrophoretic deposition method. © 2012 Materials Research Society.

    DOI

  • Modification of optical response in quantum dots embedded in a photonic crystal waveguide via photonic band engineering

    Nobuhiko Ozaki, Hayato Yoneda, Koichi Takeuchi, Hisaya Oda, Naoki Ikeda, Yoshimasa Sugimoto, Yoshinori Watanabe, Kiyoshi Asakawa (Part: Lead author, Corresponding author )

    Materials Research Society Symposium Proceedings   1438   13 - 18   2012  [Refereed]

     View Summary

    We propose to use Purcell effect emerged at slow light regions in photonic crystal waveguide (PC-WG) modes for controlling the relaxation time of excited carriers in QDs. Straight GaAs PC-WGs including InAs-QDs with various lattice constants of PC were prepared in order to control the wavelength of the slow light in the PC-WG modes. PL measurements of the PC-WGs indicated enhancements of emission from QDs at the localized wavelength of slow light regions due to the Purcell effect. The enhanced emission peak wavelength was continuously shifted with the PC lattice constant. These results suggest that the PC-WG can be utilized to modify the spontaneous emission rate and carrier relaxation time of the embedded QD. This modification can be applied and useful for various QD-based optical devices as well as our proposed all-optical switching device based on PC-WG/QD. © 2012 Materials Research Society.

    DOI

  • Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source

    N. Ozaki, K. Takeuchi, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, R. A. Hogg (Part: Lead author, Corresponding author )

    Journal of Crystal Growth ( ELSEVIER SCIENCE BV )  323 ( 1 ) 191 - 193   2011.05  [Refereed]

     View Summary

    Multi-color quantum dot (QD) ensembles were grown by selective-area growth method to realize a shape-controlled broadband light source. By using a metal-mask, QD ensembles and strain reducing layer (SRL) were formed in selective areas on a wafer. The SRL thickness was varied to achieve appropriate shifts in the peak wavelength of the QD emission spectrum up to 90 nm. A summation of PL spectra obtained from the multi-color QD ensembles shows a broadband emission spectrum with a width of approximately 120 nm, even though this spectrum is attributed to the ground state emissions of these QD ensembles. A current-induced broadband light source such as a superluminescent diode (SLD) based on the multi-color QD ensembles is expected to have an emission spectrum with a width of more than 120 nm owing to the combination of excited state emissions. Furthermore, a desired shape of the SLD spectrum can be obtained by controlling the injection current applied to each QD ensemble. This approach is promising for a shape-controlled broadband SLD, and it is particularly applicable to optical coherence tomography (OCT). (C) 2010 Elsevier B.V. All rights reserved.

    DOI

  • InAs quantum-dots laser utilizing GaAs W1 type photonic-crystal slab line-defect waveguide

    H. Oda, N. Hamada, A. Yamanaka, N. Ozaki, N. Ikeda, Y. Sugimoto

    2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011     CB. P.4 THU   2011

     View Summary

    Photonic crystals are very suitable for controlling radiation field and propagation characterization of light. As an important application, it is ultra compact and ultrafast optical integrated circuits (OIC) based on photonic crystals slab waveguides (PC-WGs) composing of the line-defects [1, 2]. The PC-WG is also attractive for laser lasing, because very small group velocity of near the Brillouin zone (BZ) edge should enhance interactions between the radiation field and matter. Indeed, the lasing spectrum has been observed from optically pumped InAs-quantum dots (InAs-QDs) embedded in PC-WG of the multimode W3 type (three rows missing line-defect) [3]. In the present study, we observe laser action in InAs-QDs PC-WG of the single-mode W1 type (single row missing line-defect). © 2011 IEEE.

    DOI

  • WIDEBAND OPERATION OF 2D PHOTONIC CRYSTAL DIRECTIONAL COUPLER WITH TOPOLOGY OPTIMIZED WAVEGUIDE BENDS

    YOSHINORI WATANABE, NAOKI IKEDA, YOSHIAKI TAKATA, YOSHINORI KITAGAWA, NOBUHIKO OZAKI, YOSHIMASA SUGIMOTO, KIYOSHI ASAKAWA

    Journal of Nonlinear Optical Physics & Materials ( World Scientific Pub Co Pte Lt )  19 ( 04 ) 543 - 550   2010.12  [Refereed]

     View Summary

    A directional coupler in a two-dimensional photonic crystal slab waveguide was optimized to operate in wideband by applying topology optimized bends at input/output ports. We fabricated the sample based on the optimized design and demonstrated that the directional coupler performs properly in the transmittance and the bandwidth comparable to the straight waveguide. We experimentally confirmed the excellent extinction ratio (12 ~ 15dB) of bar and cross port.

    DOI

  • Evolution of nanophotonics from semiconductor photonic crystal device to metal/semiconductor plasmonic device

    K. Asakawa, Y. Sugimoto, N. Ikeda, D. Tsuya, Y. Koide, Y. Watanabe, N. Ozaki, D. V. Kumar, T. Nomura, D. Inoue, A. Miura, H. Fujikawa, K. Sato

    Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010     18 - 24   2010  [Refereed]

     View Summary

    This paper reviews our recent activities on nanophotonics based on a photonic crystal (PC)/quantum dot (QD)-combined structure for an all-optical device and a metal/semiconductor composite structure using surface plasmon (SP) and negative refractive index material (NIM). The former structure contributes to an ultrafast signal processing component by virtue of new PC design and QD selective-area-growth technologies, while the latter provides a new RGB color filter with a high precision and optical beam-steering device with a wide steering angle. © 2010 IEEE.

    DOI

  • Nanophotonics technology for advanced quantum dot / photonic crystal device and metal / semiconductor plasmonic device

    Y. Sugimoto, N. Ikeda, D. Tsuya, N. Ozaki, H. Oda, A. Yamanaka, A. Miura, T. Nomura, D. Inoue, H. Fujikawa, S. Ohkouchi, Y. Watanabe, Y. Koide, K. Satoh, K. Asakawa

    2010 Photonics Global Conference, PGC 2010     1月5日   2010

     View Summary

    Nano-photonic structures/materials such as surface plasmon and negative-index material as well as quantum dots (QD) and photonic crystals (PCs) are discussed from potentials for new photonic devices and technologies. PC slab waveguides and QDs were developed for key photonic devices such as ultra-small and ultrafast symmetrical Mach-Zehnder (SMZ)-type all-optical switch (PC-SMZ) and an optical flip-flop device (PC-FF). We have studied energy-saving light/matter interaction in a PC waveguide with emphasis on virtual-excitation-based nonlinear effects such as optical Kerr effect. We have also demonstrated a new RGB color filter on Al film with sub-wavelength holes in a large area with a high precision and optical beam-steering device with a wide steering angle.

    DOI

  • Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask

    Nobuhiko Ozaki, Shunsuke Ohkouchi, Yoshiaki Takata, Naoki Ikeda, Yoshinori Watanabe, Yoshimasa Sugimoto, Kiyoshi Asakawa (Part: Lead author, Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  48 ( 6 ) 065502 1-4   2009.06  [Refereed]

    DOI

  • Sequential Operations of Quantum Dot/Photonic Crystal All-Optical Switch With High Repetitive Frequency Pumping

    Y. Kitagawa, N. Ozaki, Y. Takata, N. Ikeda, Y. Watanabe, Y. Sugimoto, K. Asakawa

    Journal of Lightwave Technology ( Institute of Electrical and Electronics Engineers (IEEE) )  27 ( 10 ) 1241 - 1247   2009.05  [Refereed]

    DOI

  • Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits

    Y. Sugimoto, N. Ikeda, N. Ozaki, Y. Watanabe, S. Ohkouchi, T. Kuroda, T. Mano, T. Ochiai, K. Kuroda, N. Koguchi, K. Sakoda, K. Asakawa

    MICROELECTRONICS JOURNAL ( ELSEVIER SCI LTD )  40 ( 4-5 ) 736 - 740   2009.04  [Refereed]

     View Summary

    Two types of nanophotonic technologies-two-dimensional photonic crystal (2D PC) slab waveguides (WGs) and quantum dots (QDs)-were developed for key photonic device Structures in the future. For an ultrafast digital photonic network, an ultrasmall and ultrafast symmetrical Mach-Zehnder (SMZ)type all-optical switch (PC-SMZ) and an optical flip-flop device (PC-FF) have been developed. To realize these devices, one method is to develop a selective-area molecular beam epitaxial growth QD technique by employing a metal mask method. Another method is to establish a new design method, i.e., topology optimization of the 2DPC WG with a wide and flat bandwidth, high transmittance, and low reflectivity. We also fabricated an optical microcavity in a photonic crystal slab embedded with GaAs QDs by droplet epitaxy. The Purcell effect on the exciton emission of GaAs QDs was confirmed by microphotoluminescence and lifetime measurements. (C) 2008 Elsevier Ltd. All rights reserved.

    DOI

  • Site-controlled InAs quantum dot formation grown on the templates fabricated by the Nano-Jet Probe method

    S. Ohkouchi, N. Ozaki, Y. Sugimoto, H. Ishikawa, K. Asakawa

    JOURNAL OF CRYSTAL GROWTH ( ELSEVIER SCIENCE BV )  311 ( 7 ) 1819 - 1821   2009.03  [Refereed]

     View Summary

    We have developed a nanoprobe-assisted bottom-up technique that allows to fabricate site-controlled quantum dots (SC-QDs), using a specially designed atomic force microscope probe, referred to as the Nano-jet Probe (NJP). Beginning with the fabrication of regular QD arrays by using the NJP, we vertically aligned self-assembled InAs QDs using the strain-induced stacking method and produced assembled QD stacks. In order to improve the optical property of the SC-QDs, an AlGaAs barrier layer was introduced in the spacer layer of the stacked structures. The photoluminescence measurements of the fabricated structures revealed that they had good crystallographic qualities. (C) 2008 Elsevier B.V. All rights reserved.

    DOI

  • Nanophotonic technologies for innovative all-optical signal processor using photonic crystals and quantum dots

    Y. Sugimoto, N. Ikeda, N. Ozaki, Y. Watanabe, S. Ohkouchi, S. Nakamura, K. Asakawa

    TRANSPORT AND OPTICAL PROPERTIES OF NANOMATERIALS ( AMER INST PHYSICS )  1147   179 - +   2009  [Refereed]

     View Summary

    GaAs-based two-dimensional photonic crystal (2DPC) slab waveguides (WGs) and InAs quantum dots (QDs) were developed for key photonic device structures in the future. An ultrasmall and ultrafast symmetrical Mach-Zehnder (SMZ)-type all-optical switch (PC-SMZ) and an optical flip-flop device (PC-FF) have been developed based on these nanophotonic structures for an ultrafast digital photonic network. To realize these devices, two important techniques were developed. One is a new simulation method, i.e., topology optimization method of 2DPC WGs with wide/flat bandwidth, high transmittance and low reflectivity. Another is a new selective-area-growth method, i.e., metal-mask molecular beam epitaxy method of InAs QDs. This technique contributes to achieving high-density and highly uniform InAs QDs in a desired area such as an optical nonlinearity-induced phase shift arm in the PC-FF. Furthermore, as a unique site-controlled QD technique, a nano-jet probe method is also developed for positioning QDs at the centre of the optical nonlinearity-induced phase shift arm.

    DOI

  • Photonic crystal and quantum dot technologies for ultra-small and ultra-fast all-optical flip-flop

    N. Ozaki, N. Ikeda, Y. Watanabe, Y. Takata, Y. Kitagawa, S. Ohkouchi, S. Nakamura, A. Watanabe, A. Mizutani, Y. Sugimoto, K. Asakawa (Part: Lead author )

    ECS Transactions   16 ( 41 ) 31 - 37   2009  [Refereed]

     View Summary

    Nano-photonic technologies of GaAs-based two-dimensional photonic crystal (2DPC) slab waveguides and InAs quantum dots (QDs) are reviewed for symmetric Mach-Zehnder type, ultra-small and ultra-fast all-optical switch (PC-SMZ) and optical flip-flop device (PC-FF). In the 1st phase of this work, ultra-fast (∼ps) and ultra-low energy (∼100 fJ) switching has been demonstrated using the PC-SMZ chip with 600 μm x 300 μ in size. In the 2nd phase, the concept of the PC-FF based on the dual PC-SMZs for providing a latch function has been proposed for a future ultra-fast optical digital processor. One of the priority subjects is to establish a new design method, i.e., topology optimization method of the 2DPC waveguide with wide/flat bandwidth, high transmittance and low reflectivity. Another one is to develop a selective-area-MBE growth technique with a metal-mask method for high-density and highly uniform InAs QDs with different absorption wavelengths in different areas. ©The Electrochemical Society.

    DOI

  • Topology optimization of a wavelength-selective Y-junction for 2D photonic crystal waveguides

    Yoshinori Watanabe, Naoki Ikeda, Yoshiaki Takata, Yoshinori Kitagawa, Nobuhiko Ozaki, Yoshimasa Sugimoto, Kiyoshi Asakawa

    JOURNAL OF PHYSICS D-APPLIED PHYSICS ( IOP PUBLISHING LTD )  41 ( 17 )   2008.09  [Refereed]

     View Summary

    The topology optimization ( TO) technique has been employed to design a wavelength-selective Y-junction for two-dimensional photonic crystal slab waveguides. The TO design exhibits high-pass and low-pass filtering spectra for two different paths in the Y-junction. Large cross-talk suppression of -20 dB at wavelength separation of 30 nm has also been obtained. These calculated characteristics have been experimentally verified by using a GaAs-based air-bridge-type photonic crystal waveguide. The TO-designed Y-junction contributes to an essential component for a new photonic crystal-based all-optical flip-flop, PC-FF.

    DOI

  • Selective-area-growth of InAs-QDs with different absorption wavelengths via developed metal-mask/MBE method for integrated optical devices

    N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, N. Ikeda, K. Asakawa (Part: Lead author )

    APPLIED SURFACE SCIENCE ( ELSEVIER SCIENCE BV )  254 ( 23 ) 7968 - 7971   2008.09  [Refereed]

     View Summary

    The selective-area-growth (SAG) of InAs quantum dots (QDs) with different emission wavelengths on different areas was carried out using the metal-mask (MM) method during conventional molecular beam epitaxy (MBE) growth. Two SAG areas (SAG-1 and SAG-2) of the QDs were obtained using the rotational MM having square windows; first, the MM was mounted on a substrate for SAG-1, and then the same MM was used for SAG-2 after being rotated it by 180 degrees. The absorption wavelengths of the selectively grown QDs were controlled by inserting strain-reducing layers of a different thickness on each grown QD layer. Photoluminescence measurements revealed the successful SAG of QDs in the neighboring a few hundred-micron-square areas with different emission wavelengths, e.g., 1250 and 1300 nm. These techniques are promising for applications of QD-based optical and electronic devices, including our proposed photonic crystal (PC) and QD-based all-optical digital flip-flop (FF) device, i.e., PC-FF.

    DOI

  • Selective growth of stacked InAs quantum dots by using the templates formed by the Nano-Jet Probe

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa

    APPLIED SURFACE SCIENCE ( ELSEVIER SCIENCE BV )  254 ( 23 ) 7821 - 7823   2008.09  [Refereed]

     View Summary

    We have demonstrated the selective area growth of stacked self-assembled InAs quantum dot (QD) arrays in the desired regions on a substrate and confirmed the photoluminescence (PL) emission exhibited by them at room temperature. These InAs QDs are fabricated by the use of a specially designed atomic force microscope cantilever referred to as the Nano-Jet Probe (NJP). By using the NJP, two-dimensional arrays with ordered In nano-dots are fabricated in the desired square regions on a GaAs substrate and directly converted into InAs QD arrays through the subsequent annealing by the irradiation of As flux. By using the converted QD arrays as strain templates, self-organized InAs QDs are stacked. These stacked QDs exhibit the PL emission peak at a wavelength of 1.02 mu m. (C) 2008 Elsevier B.V. All rights reserved.

    DOI

  • In situ metal mask for selective area growth of thin epitaxial layers

    Shunsuke Ohkouchi, Nobuhiko Ozaki, Yoshiaki Takata, Yoshinori Kitagawa, Yusui Nakamura, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa

    JAPANESE JOURNAL OF APPLIED PHYSICS ( JAPAN SOCIETY APPLIED PHYSICS )  47 ( 4 ) 2987 - 2990   2008.04  [Refereed]

     View Summary

    We have developed an in situ metal mask that enables the selective formation of molecular beam epitaxially grown layers in narrow regions and the subsequent formation of marker layers. It can be fitted to a sample holder and removed in an ultrahigh-vacuum environment; therefore, device structures can be fabricated without exposing the sample surfaces to air. To explore the effectiveness of the mask, we used it to grow quantum dot (QD) layers in narrow regions and verified the perfect selectivity of the QD growth. The grown QDs exhibited high optical quality with a photoluminescence peak at approximately 1.29 mu m and a linewidth of 30 meV at room temperature. Furthermore, on the selectively grown layers, we have fabricated waveguide structures that showed a high transmittance near 1.3 mu m wavelength with a dip due to the absorption by the embedded QDs. The developed mask can be used for the integration of microstructures into optoelectronic functional devices.

    DOI

  • Molecular beam epitaxial growth of site-controlled InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES ( ELSEVIER SCIENCE BV )  40 ( 6 ) 1794 - 1796   2008.04  [Refereed]

     View Summary

    We have demonstrated the selective area growth of self-assembled InAs quantum dots (QDs) in the desired regions by using a template composed of InAs QD arrays. These InAs QDs were fabricated by the use of a specially designed atomic force microscope cantilever, referred to as the Nano-Jet Probe (NJP). Using the NJP, two-dimensional arrays of ordered In nano-dots were fabricated in the selected square regions on a GaAs substrate and directly converted to InAs QD arrays by subsequent annealing by the irradiation of As flux. By using the converted QD arrays as strain templates, self-organized InAs QDs were formed in the selected square regions. These InAs QD arrays were used for the further stacking of QDs, and photoluminescence emission was confirmed from the fabricated stacked QD structure. (c) 2007 Elsevier B.V. All rights reserved.

    DOI

  • Optical-nonlinearity-induced phase shift via selective-area grown InAs quantum dots in a photonic crystal waveguide

    Yoshinori Kitagawa, Nobuhiko Ozaki, Yoshiaki Takata, Naoki Ikeda, Shunsuke Ohkouchi, Yoshinori Watanabe, Yoshimasa Sugimoto, Myoshi Asakawa

    JAPANESE JOURNAL OF APPLIED PHYSICS ( JAPAN SOCIETY APPLIED PHYSICS )  47 ( 4 ) 2893 - 2896   2008.04  [Refereed]

     View Summary

    The selective-area growth (SAG) of InAs quantum dots (QDs) in a GaAs two-dimensional photonic crystal waveguide (2DPC-WG) slab was performed by a metal-mask molecular beam epitaxy (MBE) method, and phase shifts induced by an optical nonlinearity (ONL) of the QD were characterized by two-color pump and probe measurements. The phase shift is caused by the refractive index change (Delta n) in the PC-WG, while the Delta n is induced by the absorption saturation as a third-order ONL effect of the QD. For the samples with different SAG-QD lengths, it was confirmed that the phase shift is proportional to the length of the SAG area and to the pump energy. For application to the PC/QD-based symmetrical Mach-Zehnder (SMZ)-type all-optical switch, that is, PC-SMZ, a bright prospect for the design criterion was obtained such that the 180 degrees phase shift, necessary for the PC-SMZ, can be achieved using the four-stacked-layer-QD WG with a 250 mu m length at a pump energy of 1000 f(J) a slow light with a group velocity of 0.05c (c is the light velocity in vacuum) is used.

    DOI

  • Precise control of dry etching for nanometer scale air-hole arrays in two-dimensional GaAs/AlGaAs photonic crystal slabs

    Naoki Ikeda, Yoshimasa Sugimoto, Yoshinori Watanabe, Nobuhiko Ozaki, Yoshiaki Takata, Yu Tanaka, Kuon Inoue, Kiyoshi Asakawa

    OPTICS COMMUNICATIONS ( ELSEVIER SCIENCE BV )  275 ( 1 ) 257 - 267   2007.07  [Refereed]

     View Summary

    Precise control of highly anisotropic reactive-ion-beam-etching (RIBE) for GaAs/AlGaAs-based two-dimensional photonic crystals (2DPCs) is investigated in terms of the substrate temperature, T-s, ion accelerating voltage, V-i, and Cl-2 gas pressure, p. T-s is shown to influence the shape of the sidewall, while the balance of the physical etching dominated by the value of V and the chemical etching dominated by the value of p is essential for keeping smooth and vertical sidewalls of 100-nm-scale air-holes. 2DPC air-hole patterns are defined by an electron beam (EB) lithography machine and air-holes are dry-etched with the EB resist as an etching mask. The optimized balance between the V-i and p for 0.5-1.0-mu m-deep air-holes results in the high-rate-etching regime given at V-i = 500 V and p = 8 x 10(-4) Torr using a 650-nm-thick resist mask, while the optimized balance for 50-nm-scale fine air-holes results in the low-rate-etching regime given at V-i = 330 V and p = 5 x 10(-4) Torr using a 350-nm-thick resist mask. In particular, the latter condition is essential for fabricating topology-optimized 2DPC air-hole arrays with the minimum air-hole-size of 50 nm or less. These process conditions definitely contribute to excellent measured transmission spectra in good agreement with the calculated one in a near-infrared range. (c) 2007 Elsevier B.V. All rights reserved.

    DOI

  • Topology optimization of waveguide bends with wide, flat bandwidth in air-bridge-type photonic crystal slabs

    Yoshinori Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Yoshiaki Takata, Yoshinori Kitagawa, Akio Mizutani, Nobuhiko Ozaki, Kiyoshi Asakawa

    JOURNAL OF APPLIED PHYSICS ( AMER INST PHYSICS )  101 ( 11 )   2007.06  [Refereed]

     View Summary

    We employed the topology optimization (TO) method to improve the transmission bandwidth of waveguide bends in air-bridge-type, two-dimensional photonic crystal slabs. We experimentally confirmed that bend loss at longer wavelengths in the vicinity of the band edge was suppressed by using TO. The optimized bends showed good performance, comparable to that of straight waveguides. (c) 2007 American Institute of Physics.

    DOI

  • High transmission recovery of slow light in a photonic crystal waveguide using a hetero group velocity waveguide

    Nobuhiko Ozaki, Yoshinori Kitagawa, Yoshiaki Takata, Naoki Ikeda, Yoshinori Watanabe, Akio Mizutani, Yoshimasa Sugimoto, Kiyoshi Asakawa (Part: Lead author )

    OPTICS EXPRESS ( OPTICAL SOC AMER )  15 ( 13 ) 7974 - 7983   2007.06  [Refereed]

     View Summary

    High transmission of slow-light in a photonic crystal (PC) waveguide (WG) using a hetero group-velocity (Ht-V-g) PC-WG was proposed and experimentally investigated. The Ht-V-g WG, which comprises a low-group- velocity (L-V-g) PC-WG section between two identical high-group-velocity (H-V-g) PC-WGs, is designed to decrease the impedance mismatch of the L-V-g PC-WG. The increase in transmittance of a propagating pulse was confirmed in the Ht-V-g PC-WG even in the vicinity of the band-gap, whereas the homogeneous PC-WG showed a gradual decrease in transmittance with the pulse wavelength approaching the bandgap. The group index (ng) of the L-V-g region in the Ht-V-g PC-WG was measured by the cross-correlation method and attained a value above 20. On the other hand, the transmittance of the Ht-V-g structure recovered approximately 16dB compared to the homogeneous L-V-g WG having same ng, 17. This recovery is mainly dominated by the coupling improvement due to the Ht-V-g structure, around 12dB. These results indicate the effectiveness of the Ht-V-g structure to use slow light in a PC- WG, which leads to various applications in PC-based optical devices. (C) 2007 Optical Society of America

    DOI

  • Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devices

    N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, Y. Nakamura, N. Ikeda, K. Asakawa

    JOURNAL OF CRYSTAL GROWTH ( ELSEVIER SCIENCE BV )  301   771 - 775   2007.04  [Refereed]

     View Summary

    A metal-mask (MM) molecular beam epitaxy technique for selective-area-growth (SAG) of self-assembled InAs-quantum dots (QDs) on a GaAs substrate was developed for realizing ultra-small and ultra-fast all-optical switches (PC-SMZ). Growth conditions of the QD were optimized by virtue of the MM with a large window enabling real-time observations of reflection-high-energy-electron-diffraction patterns and growth temperatures. Successful SAG was confirmed by atomic force microscope observations of the high-density (4 x 10(10) cm(-2)) QD grown only on the unmasked area, while high uniformity of the QD was examined by room-temperature photoluminescence (PL) measurement. It resulted in a 1250 nm peak in the center wavelength, 38 meV in FWHM, comparable to that of the QD grown without the NM. In addition, insertion of a strain-reducing layer of GaInAs on the QD reported previously was confirmed to be effective for controlling the PL peak wavelength of the QD between 1250 and 1320 nm without degrading the optical quality of QDs. The MM method shown here provides a possibility of an advanced PC-SMZ, i.e., an ultra-fast all-optical flip-flop (PC-FF), which requires a QD ensemble with a different absorption-peak wavelength in a different area. (c) 2006 Elsevier B.V. All rights reserved.

    DOI

  • Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe method

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa

    JOURNAL OF CRYSTAL GROWTH ( ELSEVIER SCIENCE BV )  301   726 - 730   2007.04  [Refereed]

     View Summary

    We have demonstrated the selective area growth of high density InAs quantum dots (QDs) by using site-controlled InAs dots that were formed in the desired regions as templates. The fabrication of the InAs dots for the templates was enabled by the use of a specially designed atomic-force-microscope (AFM) cantilever, referred to as the nano-jet probe (NJP). Using the NJP, two-dimensional (213) arrays of ordered In nano-dots were reproducibly fabricated in the desired regions on a GaAs substrate. These In nano-dots were directly converted to InAs QD arrays by subsequent annealing with irradiation of arsenic flux. By using the converted QD arrays as strain templates, self-organized InAs QDs were formed in the selected regions. (c) 2006 Elsevier B.V. All rights reserved.

    DOI

  • Topology Optimization for Photonic Crystal Waveguide Bends with Wide and Flat Bandwidths in Air-Bride type Photonic Crystal Slabs

    Y. Watanabe, N. Ikeda, Y. Sugimoto, Y. Takata, Y. Kitagawa, A. Mizutani, N. Ozaki, K. Asakawa

    2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 ( IEEE )    1027 - 1028   2007

     View Summary

    Topology optimization method has been applied to design the waveguide bends in the air-bridge type two-dimensional photonic crystal slab. We demonstrated that the optimized bends show good performance, comparable to the straight waveguide. (C) 2007 Optical Society of America

  • Measurements of optical non-linearity induced phase-shifts of signal pulse with repetitive control pulses in photonic crystal/quantum dot waveguide

    Yoshinori Kitagawa, Nobuhiko Ozaki, Yoshiaki Takata, Naoki Ikeda, Yoshinori Watanabe, Akio Mizutani, Yoshimasa Sugimoto, Kiyoshi Asakawa

    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 ( IEEE )    666 - 667   2007

    DOI

  • Monolithic growth of InAs-QDs with different absorption wavelengths in different areas for integrated optical devices

    Y. Takata, N. Ozaki, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani, K. Asakawa

    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 ( IEEE )    30 - 31   2007

     View Summary

    We have developed a technique for selective-area-growth (SAG) of InAs quantum dots (QDs) having different absorption wavelengths, with the goal of using them in all-optical integrated devices. This technique, using the metal-mask method and the insertion of a strain-reducing-layer, provides successful SAG of QDs absorbing at different wavelengths in different areas. This SAG technique is promising for various QD applications as well as our proposed photonic-crystal-based all optical switch (PC-SMZ) and digital flip-flop device (PC-FF).

    DOI

  • InAs quantum dots grown on selective areas with a metal mask for photonic-crystal-based ultra-small and ultra-fast all optical devices

    N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani, K. Asakawa

    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS ( IEEE )    493 - 496   2007

     View Summary

    A metal-mask (MM) method for selective-area-growth (SAG) of self-assembled InAs quantum dots (QDs) on a GaAs substrate was developed for applications of ultra-small and ultra-fast all optical devices based on a combination of QD and photonic crystal waveguides (PC-WGs). Successful SAG of QDs with high density and high optical quality comparable to conventional InAs-QDs grown without the MM was confirmed by atomic force microscopy and photo luminescence (PL) measurements. The QD density was 4x10(10) cm(-2) and FWHM of the PL emission was around 30meV at room temperature. By insertion of a strain-reducing layer on the QD, the PL peak wavelength was controlled from 1240nm to 1320nm. The MM method is promising for realizing the PC-based all optical devices, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.

  • Selective-area growth of self-assembled InAs-QDs by metal mask method for optical integrated circuit applications

    Ozaki N, Takata Y, Ohkouchi S, Sugimoto Y, Ikeda N, Watanabe Y, Kitagawa Y, Mizutani A, Asakawa K

    Materials Research Society Symposium Proceedings   959   65 - 70   2007  [Refereed]

  • Fluorescence XAFS study on local structure around Cr atoms doped in ZnTe

    Hironori Ofuchi, Nobuhiko Ozaki, Nozomi Nishizawa, Hidekazu Kinjyo, Shinji Kuroda, Koki Takita

    X-RAY ABSORPTION FINE STRUCTURE-XAFS13 ( AMER INST PHYSICS )  882   517 - +   2007  [Refereed]

     View Summary

    The geometric structures for ferromagnetic Zn1-xCrxTe films grown by molecular beam epitaxy were investigated by fluorescence XAFS measurements in order to elucidate the relationship between the geometric structure and the magnetic properties. XAFS analysis suggested that the majority of Cr atoms doped in CrTe substituted the Zn-site in the ZnTe lattice below the Cr content x=0.048, and formed Cr-Te compounds such as Cr2Te3 and CrTe above x=0.090. It is suggested that ferromagnetism of the Zn1-xCrxTe films above x=0.090 is due to the formation of Cr-Te compounds.

    DOI

  • Selective formation of high density InAs quantum dot arrays using templates fabricated by the nano-jet probe

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa

    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS ( IEEE )    466 - 469   2007

     View Summary

    We have demonstrated the selective area growth of high density InAs quantum dots (QDs) in the square regions by using site-controlled InAs dots that were formed in the desired regions as templates. These fabricated InAs dots for the templates were enabled by the use of a specially designed atomic-force-microscope (AFM) cantilever, referred to as the Nano-Jet Probe (NJP). Using the NJP, two-dimensional (2D) arrays of ordered In nano-dots were fabricated in the desired square regions on a GaAs substrate. These In nano-dots were directly converted to InAs QD arrays by subsequent annealing with irradiation of arsenic flux. By using the converted QD arrays as strain templates, self-organized InAs QDs with high density were formed in the selected square regions.

  • Topology Optimization for Photonic Crystal Waveguide with Wide and Flat Bandwidths in Ultra-Fast All-Optical Switch (PC-SMZ)

    Yoshinori Watanabe, Yoshimasa Sugimoto, Naoki Ikeda, Nobuhiko Ozaki, Akio Mizutani, Yoshiaki Takata, Yoshinori Kitagawa, Jakob Jensen, Ole Sigmund, Peter Borel, Martin Kristensen, Kiyoshi Asakawa

    2006 IEEE LEOS Annual Meeting Conference Proceedings ( IEEE )    2006.10

    DOI

  • Broadband waveguide intersection with lowcrosstalk in two-dimensional photonic crystal circuits by using topology optimization

    Yoshinori Watanabe, Yoshimasa Sugimoto, Naoki Ikeda, Nobuhiko Ozaki, Akio Mizutani, Yoshiaki Takata, Yoshinori Kitagawa, Kiyoshi Asakawa

    OPTICS EXPRESS ( OPTICAL SOC AMER )  14 ( 20 ) 9502 - 9507   2006.10  [Refereed]

     View Summary

    Topology optimization has been used to design intersections in two-dimensional photonic crystal slab waveguides. We have experimentally confirmed that the optimized intersection displays high-transmittance with low-crosstalk for the straightforward beam-propagation line. (c) 2006 Optical Society of America

    DOI

  • Photonic crystal and quantum dot technologies for all-optical switch and logic device

    Kiyoshi Asakawa, Yoshimasa Sugimoto, Yoshinori Watanabe, Nobuhiko Ozaki, Akio Mizutani, Yoshiaki Takata, Yoshinori Kitagawa, Hiroshi Ishikawa, Naoki Ikeda, Koichi Awazu, Xiaomin Wang, Akira Watanabe, Shigeru Nakamura, Shunsuke Ohkouchi, Kuon Inoue, Martin Kristensen, Ole Sigmund, Peter Ingo Borel, Roel Baets

    NEW JOURNAL OF PHYSICS ( IOP PUBLISHING LTD )  8   2006.09  [Refereed]

     View Summary

    Nano-photonic technologies of GaAs-based two-dimensional photonic crystal (2DPC) slab waveguides (WGs) and InAs-based quantum dots (QDs) are reviewed for a symmetrical Mach - Zehnder (SMZ) type, ultra-small and ultra-fast all-optical switch (PC-SMZ) and logic device. As the first phase, ultra-fast (similar to ps) and ultra-low energy (similar to 100 fJ) switching has been demonstrated using a chip 600 mu m x 300 mu m in size. The second phase is to create a PC-SMZ-based ultra-fast photonic logic switch with a latch function for a future ultra-fast photonic digital processor. One of the priority subjects is to establish a new design method, i.e., topology optimization (TO) method of 2DPC-WGs with wide/flat bandwidth, high transmittance and low reflectivity. Another one is to develop selective-area-grown, high-density and highly uniform InAs QDs with large optical nonlinearity (ONL) by using a metal-mask (MM) molecular beam epitaxy (MBE) growth method. Recent results regarding these two subjects encourage us to reach the final goal.

    DOI

  • Topology optimised photonic crystal waveguide intersections with high-transmittance and low crosstalk

    N. Ikeda, Y. Sugimoto, Y. Watanabe, N. Ozaki, A. Mizutani, Y. Takata, J. S. Jensen, O. Sigmund, P. I. Borel, M. Kristensen, K. Asakawa

    ELECTRONICS LETTERS ( INSTITUTION ENGINEERING TECHNOLOGY-IET )  42 ( 18 ) 1031 - 1033   2006.08  [Refereed]

     View Summary

    Numerical and experimental studies on the photonic crystal waveguide intersection based on the topology optimisation design method are reported and the effectiveness of this technique is shown by achieving high transmittance spectra with low crosstalk for the straightforward beam-propagation line in the intersection.

    DOI

  • Significant enhancement of ferromagnetism in Zn1-xCrxTe doped with iodine as an n-type dopant

    Nobuhiko Ozaki, Nozomi Nishizawa, Stephane Marcet, Shinji Kuroda, Osamu Eryu, Koki Takita (Part: Lead author )

    PHYSICAL REVIEW LETTERS ( AMERICAN PHYSICAL SOC )  97 ( 3 )   2006.07  [Refereed]

     View Summary

    The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn1-xCrxTe. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a drastic enhancement of the ferromagnetism in Zn1-xCrxTe, while the grown films remained electrically insulating. In particular, at a fixed Cr composition of x=0.05, the ferromagnetic transition temperature T-C increased up to 300 K at maximum due to the iodine doping from T-C=30 K of the undoped counterpart, while the ferromagnetism disappeared due to the doping of nitrogen as a p-type dopant. The observed systematic correlation of ferromagnetism with the doping of charge impurities of both the p and n type, suggesting a key role of the position of Fermi level within the impurity d state, is discussed on the basis of the double-exchange interaction as a mechanism of ferromagnetism in this material.

    DOI

  • Topology optimization for photonic crystal waveguide intersection with wide and flat bandwidths in ultra-fast all-optical switch (pc-smz)

    Y. Sugimoto, Y. Watanabe, N. Ikeda, N. Ozaki, A. Mizutani, Y. Takata, J. S. Jensen, O. Sigmund, P. I. Borel, M. Kristensen, H. Ishikawa, K. Asakawa

    2006 European Conference on Optical Communications Proceedings, ECOC 2006     1 - 2   2006

     View Summary

    Numerical and experimental studies on the photonic crystal waveguide intersection based on the topology optimization design method are reported and the effectiveness is shown by achieving high transmission spectra with low crosstalk for the straightforward beam-propagation line.

    DOI

  • Planar focusing lens grating for vertical coupling on 2D photonic crystal slato waveguide

    Akio Mizutani, Naoki Ikeda, Yoshinori Watanabe, Nobuhiko Ozaki, Yoshiaki Takata, Yoshinori Kitagawa, Frederik Laere, Roel Baets, Yoshimasa Sugimoto, and Kiyoshi Asakawa

    2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 ( IEEE )    843 - 844   2006

     View Summary

    Planar focusing lens gratings are investigated in order to realize an efficient coupling from an optical fiber to a two-dimensional photonic crystal slab waveguide. The optimal gratings exhibit the calculated coupling efficiency of 34%.

    DOI

  • New design for wide/flat bandwidth in photonic crystal-based SMZ all-optical device (PC-SMZ)

    K. Asakawa, Y. Sugimoto, Y. Watanabe, N. Ozaki, A. Mizutani, N. Ikeda, O. Sigmund, P. I. Borel, M. Kristensen

    ICTON 2006: 8TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS ( IEEE )    146 - 149   2006

     View Summary

    A two-dimensional photonic crystal (2DPC) slab waveguide-based symmetric Mach-Zehnder type all-optical switch (PC-SMZ) is promising for a future ultra-fast photonic network system. An ultra-fast (similar to ps) and ultra-low energy (similar to 100 fJ) switching has already been demonstrated as the 1(st) phase. The 2(nd) phase is to create a PC-SMZbased ultra-fast photonic logical switch with a latch function for an ultra-fast photonic digital processor. One of the steps towards the goal is to develop a new design method of waveguides with wide/flat bandwidth, high transmittance and low reflectivity for improving switching performances. Another one is to develop a selective area growth of quantum dots. This paper dominantly reviews these two recent topics as well as briefing the PC-SMZ performances.

    DOI

  • Photonic crystals and quantum dots: Towards integrated optics for advanced ultra-fast all-optical signal processing

    K. Asakawa, Y. Sugimoto, Y. Watanabe, N. Ozaki, A. Mizutani, Y. Takata, Y. Kitagawa, N. Ikeda, S. Ohkouchi, S. Nakamura, A. Watanabe, X. Wang, M. Kristensen, O. Sigmund, P. I. Borel, R. Baets

    2006 European Conference on Optical Communications Proceedings, ECOC 2006     4801132 1-4   2006

     View Summary

    Nano-photonic technologies of GaAs-based two-dimensional photonic crystal (2DPC) slab waveguides and InAs-based quantum dots (QDs) are reviewed for a symmetric Mach-Zehnder type, ultra-small and ultra-fast all-optical switch (PC-SMZ) and new logic (PC-FF) device.

    DOI

  • Magneto-optical study of ferromagnetic semiconductor (Zn,Cr)Te

    N. Nishizawa, S. Marcet, N. Ozaki, S. Kuroda, K. Takita

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12 ( WILEY-V C H VERLAG GMBH )  3 ( 12 ) 4102 - 4105   2006  [Refereed]

     View Summary

    Magneto-optical properties of a ferromagnetic semiconductor (Zn,Cr)Te were investigated through magnetic circular dichroism (MCD) measurements in the visible spectral range. (Zn,Cr)Te films without and with an additional nitrogen (N) doping as an acceptor exhibited different MCD spectra around the F point; a broad MCD band extending over a few hundred meV was observed in the undoped (Zn,Cr)Te while a relatively sharp peak appeared in the heavily N-doped (Zn,Cr)Te. The different MCD spectra are considered to be correlated with the change in the Cr valence state due the acceptor doping.

    DOI

  • Suppression of ferromagnetism due to hole doping in Zn1-xCrxTe grown by molecular-beam epitaxy

    N Ozaki, Okabayashi, I, T Kumekawa, N Nishizawa, S Marcet, S Kuroda, K Takita (Part: Lead author )

    APPLIED PHYSICS LETTERS ( AMER INST PHYSICS )  87 ( 19 )   2005.11  [Refereed]

     View Summary

    Electric and magnetic properties were investigated on p-type Zn1-xCrxTe doped with nitrogen (N) as an acceptor. Thin films of p-Zn1-xCrxTe (x <= 0.09) were grown by molecular-beam epitaxy with the supply of N-2 gas excited by rf plasma. With the increase of Cr composition x at an almost fixed N concentration of the order of 10(20) cm(-3), the temperature dependence of resistivity changed from metallic behavior to an insulating one, accompanied with a significant decrease of the hole concentration. The magnetization measurements revealed that ferromagnetic behaviors observed in undoped Zn1-xCrxTe were suppressed due to the nitrogen doping; with N concentrations of the order of 10(20) cm(-3), hysteresis loops in the magnetization curve disappeared, the magnitude of magnetization decreased, and the ferromagnetic transition were not observed down to 2 K according to the Arrott plot analysis. These experimental findings are discussed on the basis of the ferromagnetic double exchange interaction which is considered to work on the Cr 3d impurity level formed in the band gap of ZnTe. (C) 2005 American Institute of Physics.

    DOI

  • Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy

    N Ozaki, Y Ohno, J Kikkawa, S Takeda (Part: Lead author )

    JOURNAL OF ELECTRON MICROSCOPY ( OXFORD UNIV PRESS )  54   I25 - I29   2005.09  [Refereed]

     View Summary

    We have studied the growth of silicon nanowires (SiNWs) by means of transmission electron microscopy. SiNWs are grown from nanocatalysts via the Vapor-Liquid-Solid (VLS) mechanism using silane (SiH4) gas as a source gas. The nanocatalysts are prepared on a hydrogen (H)-terminated Si surface. We have examined the formation mechanism of nanocatalysts on H-terminated surface and have observed several structural variants of SiNWs. According to the study we have suggested that many structural variations of SiNWs are possible, which modify the structural properties of SiNWs to great extents.

    DOI

  • Growth and magnetic properties of novel ferromagnetic semiconductor (Zn, Cr)Te

    S Kuroda, N Ozaki, N Nishizawa, T Kumekawa, S Marcet, K Takita

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS ( NATL INST MATERIALS SCIENCE )  6 ( 6 ) 558 - 564   2005.09  [Refereed]

     View Summary

    Magnetic properties of a novel ferromagnetic semiconductor (Zn, Cr)Te were investigated. Zn1-xCrxTe thin films, both without and with the additional hole doping by nitrogen, were grown by molecular beam epitaxy. In the magnetization measurement on Zn1-xCrxTe without carrier doping, the ferromagnetic behaviors such as a hysteresis loop in the magnetization vs. magnetic field curve were observed. Similar hysteretic behaviors in the field dependence were reproduced in the magnetic circular dichroism measurement. The ferromagnetic transition temperature TC deduced from Arrott plot increased almost linearly with Cr composition with the maximum T-C = 275 K at a Cr composition of x = 0. 17. The ferromagnetic behaviors observed in the undoped samples were found to be suppressed upon the p-type doping with nitrogen. These experimental findings are discussed based on the double exchange mechanism and the suppression of ferromagnetism by the hole doping is interpreted as due to the shift of the Fermi level in the Cr 3d level with the acceptor doping. (c) 2005 Elsevier Ltd. All fights reserved.

    DOI

  • Magnetic behaviors of ferromagnetic semiconductor Zn1-xCrxTe grown by MBE

    N Ozaki, N Nishizawa, S Marcet, S Kuroda, K Takita (Part: Lead author )

    JOURNAL OF SUPERCONDUCTIVITY ( SPRINGER/PLENUM PUBLISHERS )  18 ( 1 ) 29 - 32   2005.02  [Refereed]

     View Summary

    The magnetic and structural properties of NIBE-grown films of Zn1-xCrxTe were investigated. The magnetization versus magnetic field (M-H) measurement of Zn1-xCrxTe (x = 0.01-0.17) showed clear hysteresis loop at low temperatures. The ferromagnetic transition temperature (T-C) estimated from the Arrott-plot analysis increased almost linearly with the Cr composition (x) up to 275 K at x = 0.17. However, in the magnetization versus temperature (M-T) measurement, the irreversibility between the zero-field-cooled (ZFC) and field-cooled (FC) processes was observed. This is typically observed in the magnetic random system such as spin-glass or superparamagnetic phase. In the high resolution transmission microscopy (HRTEM) observations, structural defects such as stacking faults and polycrystalline-like structure were observed at high Cr compositions, whereas any apparent precipitates of different phases were not seen in all the range of Cr compositions examined. The correlation of the observed magnetic randomness with the local structural defects was discussed.

    DOI

  • Magnetic properties of undoped and N-doped Zn1-xCrxTe grown by MBE

    N Ozaki, N Nishizawa, S Kuroda, K Takita (Part: Lead author )

    Physics of Semiconductors, Pts A and B ( AMER INST PHYSICS )  772   345 - 346   2005  [Refereed]

     View Summary

    Nitrogen-doped Zn1-xCrxTe (x approximate to 0.02) thin films were gown by molecular beam epitaxy (MBE) with rf-plasma excited nitrogen source. p-type conductivity was confirmed through the Hall measurements with the highest hole concentration up to 1.8x10(18) cm(-3). The magnetization measurements of the hole-doped samples revealed the suppression of the ferromagnetism compared to the undoped one. The correlation of the magnetic properties with the position of Fermi level is discussed.

    DOI

  • Nucleation and growth processes of silicon nanowires

    S Takeda, N Ozaki, K Ueda, H Kohno, J Kikkawa, Y Ohno

    Group-IV Semiconductor Nanostructures ( MATERIALS RESEARCH SOCIETY )  832   257 - 267   2005  [Refereed]

     View Summary

    We have studied the nucleation and growth processes of silicon nanowires (SiNWs) by means of transmission electron microscopy and scanning tunneling microscopy. SiNWs are grown on hydrogen-terminated Si surface via the VLS (Vapor-Liquid-Solid) mechanism using silane (SiH4) as source gas. We have classified the growth process of SiNWs into three stages: the formation of nanocatalysts on a substrate, the nucleation of SiNWs in nanocatalysts, followed by the growth of SiNWs. We have shown that the structures of SiNWs are varied in several ways in each stage, and accordingly the structural properties of grown SiNWs can be modified to great extents. At the present moment, the phenomena at the each stage are not fully controlled, and this prevents us utilizing silicon nanowires more effectively.

    DOI

  • Magnetic and structural properties of MBE-grown Zn1-xCrxTe films

    N Ozaki, N Nishizawa, S Kuroda, K Takita (Part: Lead author, Corresponding author )

    JOURNAL OF PHYSICS-CONDENSED MATTER ( IOP PUBLISHING LTD )  16 ( 48 ) S5773 - S5776   2004.12  [Refereed]

     View Summary

    The magnetic and structural properties of MBE-grown films of a novel diluted magnetic semiconductor (DMS), Zn1-xCrxTe, were investigated. The magnetization versus magnetic field (M-H) measurement exhibited a clear hysteresis loop at low temperatures. The ferromagnetic transition temperature (T-C) estimated from the Arrott-plot analysis increased almost linearly with the Cr concentration (x) up to 275 K at x = 0.17. In the magnetization versus temperature (M-T) measurement, irreversibility between the zero-field-cooled (ZFC) and field-cooled (FC) processes was observed. This behaviour, which is typically observed in a magnetic random system such as the spin-glass or superparamagnetic phase, is considered to be related to the local structural inhomogeneity observed by high resolution transmission electron microscopy.

    DOI

  • Magnetotransport and magnetic properties of p-Zn1-xMnx Te : N - Carrier-induced ferromagnetism

    KT Nam, S Kuroda, T Kumekawa, N Ozaki, K Takita

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH ( WILEY-V C H VERLAG GMBH )  241 ( 3 ) 668 - 671   2004.03  [Refereed]

     View Summary

    The magnetic properties of nitrogen-doped p-Zn1-chiMnchiTe grown by MBE were studied through the magnetotransport measurements. In a sample of p-Zn1-chiMnchiTe with chi = 0.034 and p = 4.7 x 10(19) cm(-3), a hysteresis loop was observed below 2.5 K in the Hall resistance and the magnetoresistivity, which indicates the ferromagnetic transition. From the plot of (R-Hall/R-sheet)(2) against B/(R-Hall/R-sheet) at several temperatures, which corresponds to the so-called Arrott plot, we can estimate the Curie temperature (T-c) of the sample as about 3K, suggesting that this sample has the higher T-c than ever reported. We also demonstrated, by means of light irradiation, that the strength of ferromagnetic interactions can be controlled by changing the hole concentration. An increase of the ferromagnetic behaviours such as a small increase of the coercive field was observed under light irradiation. This result strongly supports that the ferromagnetic transition in Zn1-chiMnchiTe is the carrier-induced one. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    DOI

  • Magnetic properties of MBE-grown Zn1-xCrxTe

    N Ozaki, N Nishizawa, KT Nam, S Kuroda, K Takita (Part: Lead author, Corresponding author )

    11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS ( WILEY-VCH, INC )  1 ( 4 ) 957 - 960   2004  [Refereed]

     View Summary

    We have grown Zn1-xCrxTe films by molecular-beam-epitaxy (MBE) and investigated their magnetic properties with variation of Cr concentrations (x) between 0.01-0.08. Systematic increase of the lattice constant was observed by XRD only up to around x = 0.02. Measurements of the magnetizations M-H reveal that ferromagnetic transition occurs in the films at low temperatures. The transition temperature (T-C) which was estimated from Arrott-plots increased with Cr concentration up to about 100 K for x = 0.08. However, the temperature dependence of the magnetization M-T shows different curves below T-C for field-cooled (FC) and zero-field-cooled (ZFC) processes. Moreover, their paramagnetic Curie temperatures (theta), estimated from the higher temperature M-T curves, are different from and much higher than T-C. These behaviours could be attributed to the superparamagnetism in the films. Indeed, many defects such as stacking faults are observed in the sample with x = 0.08 through HRTEM. It could give rise to the distribution of the Cr concentrations and/or the presence of precipitates including Cr. (C) 2004 WILEYNCH Verlag GinbH & Co. KGaA. Weinheim

    DOI

  • Formation mechanism of nanocatalysts for the growth of silicon nanowires on a hydrogen-terminated Si {111} surface template

    S Takeda, K Ueda, N Ozaki, Y Ohno

    APPLIED PHYSICS LETTERS ( AMER INST PHYSICS )  82 ( 6 ) 979 - 981   2003.02  [Refereed]

     View Summary

    We have observed the formation process of nanocatalysts that act for the growth of Si nanowires by means of UHV scanning tunneling microscopy. Gold-silicon nanocatalysts that we have examined were thought to form on a hydrogen (H)-terminated [111] silicon surface and to expel Si nanowires of extremely high aspect ratio via the vapor-liquid-solid mechanism. We have observed that a nanocatalyst, that is, a droplet of melted gold-silicon alloy of about 5 nm in diameter, is actually formed in a pit on a H-terminated surface in the narrow temperature range around 500 degreesC. We have concluded that, in this specific temperature range, nanocatalysts can be melted, remain mutually isolated, absorb silicon effectively, and expel Si nanowires. Based on the result, we have proposed a method of making a thin template, which facilitates to decide the nucleation sites and the sizes of nanocatalysts, resulting in the precise control of those of Si nanowires. (C) 2003 American Institute of Physics.

    DOI

  • Misleading fringes in TEM images and diffraction patterns of Si nanocrystallites

    H Kohno, N Ozaki, H Yoshida, K Tanaka, S Takeda

    CRYSTAL RESEARCH AND TECHNOLOGY ( WILEY-V C H VERLAG GMBH )  38 ( 12 ) 1082 - 1086   2003  [Refereed]

     View Summary

    High-resolution transmission electron microscopy (HRTEM) images and electron diffraction patterns of twinned Si nanocrystallites were recorded along various directions and analyzed in detail. We point out that special attention must be paid when interpreting HRTEM images and diffraction patterns of twinned Si nanocrystallites, because elongation of reciprocal lattice points could fabricate misleading fringes and patterns. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    DOI

  • Novel amorphization process in silicon induced by electron irradiation

    J Yamasaki, Y Ohno, H Kohno, N Ozaki, S Takeda

    JOURNAL OF NON-CRYSTALLINE SOLIDS ( ELSEVIER SCIENCE BV )  299   793 - 797   2002.04  [Refereed]

     View Summary

    We recently found that amorphization is induced in Si by MeV electron irradiation. In order to account for the steady-state diagram under electron irradiation, we propose a phenomenological theory which takes into account the two competing mechanisms, namely amorphization by higher energy recoils and recrystallization by lower energy recoils as well as thermal process. We apply the new amorphization method to fabricating artificial arrangements of the columns of a-Si in a c-Si film, and discuss its use for photonic crystal based on photonic band calculation. (C) 2002 Elsevier Science B.V. All rights reserved.

    DOI

  • Fabrication of periodic nanohole multilayer structure on silicon surface toward photonic crystal

    Y Ohno, N Ozaki, S Takeda

    PHYSICA B-CONDENSED MATTER ( ELSEVIER SCIENCE BV )  308   1222 - 1225   2001.12  [Refereed]

     View Summary

    We have studied a porous structure on silicon surfaces that is introduced by electron irradiation. The structure consists of nanometer-sized holes arranged on silicon surfaces. Investigating the size and the distribution of surface nanoholes in a temperature range from about 4K to about 600K, we have estimated the porosity on a surface with nanoholes. We have fabricated a periodic dielectric multilayer structure on a silicon surface by introducing nanoholes periodically in one direction: alternating layers with different dielectric constants (the dielectric contrast of about 1.08), spaced by a distance of 100 nm. We can form periodic dielectric layers at arbitrary locations on surfaces by scanning an electron beam, changing the periodicity and the dielectric constant by varying irradiation condition. (C) 2001 Elsevier Science B.V. All rights reserved.

    DOI

  • Observation of silicon surface nanoholes by scanning tunneling microscopy

    N Ozaki, Y Ohno, M Tanbara, D Hamada, J Yamasaki, S Takeda (Part: Lead author )

    SURFACE SCIENCE ( ELSEVIER SCIENCE BV )  493 ( 1-3 ) 547 - 554   2001.11  [Refereed]

     View Summary

    We have studied electron-irradiation-induced defects created on an electron exit surface of a Si thin film by means of scanning tunneling microscopy (STM). Several electron-irradiated areas with different electron doses are provided for STM observation. Transmission electron microscopy (TEM) observation reveals a number of silicon-surface-nanoholes of 2-3 nm in diameter and about 5 nm apart in an irradiated area whenever it receives the dose larger than 1.5 x 10(24) e/cm(2), while no distinctive TEM contrast of defects is observed in an area with lower dose. STM observation has shown that electron-irradiated surfaces are rougher than a nonirradiated surface. Examining the depth distribution of the areas with different doses, we have found that each irradiated surface exhibits two depth levels which are attributed to a rough surface and a bottom of surface nanoholes, respectively. Even in an area with the lowest dose (1.5 x 10(22) e/cm(2)) in this experiment we have observed distinctive STM contrasts, the arrangement and sizes of which are similar to those of the well-developed surface nanoholes observable by TEM. This STM observation shows that the arrangement of nanoholes on an electron exit surface is set up at the very early stage, followed by the excavating of nanoholes under prolonged electron irradiation. We suggest that nanoholes exist in the early stage when only a few atomic layers are removed from the initial surface. (C) 2001 Elsevier Science B.V. All rights reserved.

    DOI

  • Optical properties of Si nanowires on a Si{111} surface

    N Ozaki, Y Ohno, S Takeda (Part: Lead author )

    OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS ( MATERIALS RESEARCH SOCIETY )  588   99 - 103   2000  [Refereed]

     View Summary

    We have investigated optical properties of straight silicon nanowires by means of in-situ cathodoluminescence spectroscopy in a transmission electron microscope. The nanowires, grown on a Si{111} surface via vapor-liquid-solid growth mechanism, have no structural defects such as kink, and the diameter and growth direction are controlled by varying the growth conditions. We have found that the nanowires emit intense light. These lines have not been observed in other kinds of Si nanostructures such as porous Si.

  • VLS growth of Si nanowhiskers on a H-terminated Si{111} surface

    N Ozaki, Y Ohno, S Takeda, M Hirata (Part: Lead author )

    MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998 ( MATERIALS RESEARCH SOCIETY )  536   305 - 310   1999  [Refereed]

     View Summary

    We have grown Si nanowhiskers on a Si{111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the < 112 > direction as well as the < 111 > direction.
    In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500 degrees C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the < 112 > direction.

  • Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface

    N Ozaki, Y Ohno, S Takeda (Part: Lead author )

    APPLIED PHYSICS LETTERS ( AMER INST PHYSICS )  73 ( 25 ) 3700 - 3702   1998.12  [Refereed]

     View Summary

    Using a hydrogen-terminated Si{111} surface as a substrate, we have grown Si nanowhiskers along the [112] direction by the vapor-liquid-solid mechanism. The minimum silicon core diameter was 3 nm and the maximum length was about 2 mu m. The minimum silicon core diameter is close to the critical value for visible light emission due to the quantum confinement effect. In contrast to an oxidized Si surface, the hydrogen-terminated surface facilitates the formation of small molten Au-Si catalysts at a lower temperature (500 degrees C) which is slightly above the eutectic temperature. The formation of catalysts and the subsequent growth at the low temperature yield thin Si nanowhiskers on a Si substrate. (C) 1998 American Institute of Physics. [S0003-6951(98)01051-1].

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▼display all

Books etc

  • "OCT with a visible broadband light source applied to high-resolution nondestructive inspection for semiconductor optical devices" in M. Wang ed. "Optical Coherence Tomography and Its Non-medical Applications"

    Nobuhiko Ozaki, Kazumasa Ishida, Tsuyoshi Nishi, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto

    IntechOpen  2020.05  ISBN: 9781789842623

  • "Application of Liquid Laser Ablation: Organic Nanoparticle Formationand Hydrogen Gas Generation" in D. Yang ed. "Applications of Laser Ablation - Thin Film Deposition,Nanomaterial Synthesis and Surface Modification"

    I. Akimoto, N. Ozaki

    Intech  2016.12  ISBN: 9789535128120

  • Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit. in Z. M. Wang ed. Self-Assembled Quantum Dots. Lecture Notes in Nanoscale Science and Technology, vol. 1

    K. Asakawa, Y. Sugimoto, N. Ikeda, Y. Watanabe, N. Ozaki, Y. Takata, Y. Kitagawa, S. Ohkouchi, S. Nakamura, A. Watanabe, X. Wang

    Woodhead Pub. Ltd.  2010.10  ISBN: 9781845695798

  • "Advanced Growth Techniques of InAs-system Quantum Dots for Integrated Nanophotonic Circuits" in H. Mohamed ed. "Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics"

    Kiyoshi Asakawa, Nobuhiko Ozaki, Shunsuke Ohkouchi, Yoshimasa Sugimoto, Naoki Ikeda

    Elsevier Science  2008.07  ISBN: 9780080463254

  • "Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit" in Z. M. Wang ed. "Self-Assembled Quantum Dots, Lecture Notes in Nanoscale Science and Technology, vol. 1"

    N. Ozaki, S. Ohkouchi, Y. Sugimoto, N. Ikeda, K. Asakawa

    Springer, New York, NY  2008  ISBN: 9780387741918

Misc

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Awards & Honors

  • 第13回応用物理学会Poster Award

    Winner: 石田 一将、尾崎 信彦、池田 直樹、杉本 喜正

    2019.03     「可視光OCTによる半導体薄膜構造の非破壊内部観察」

  • 第11回応用物理学会Poster Award

    Winner: 山内 翔、尾崎 信彦、大里 啓孝、渡辺 英一郎、池田 直樹、杉本 喜正、古城 健司、宮地 邦男、及川 陽一、David Childs、Richard Hogg

    2018.04     「InAs量子ドットベース波長掃引光源を用いたSwept Source-OCTの構築およびOCT画像深達度拡大の検証」

  • 第20回安藤博記念学術奨励賞

    Winner: 尾崎 信彦

    2007.06     「半導体スピントロニクス材料への応用を目指した強磁性半導体(Zn,Cr)Teの作製とキャリアドープによる磁性制御」

  • 第18回応用物理学会講演奨励賞

    Winner: 尾崎 信彦

    2005.09     「強磁性半導体(Zn,Cr)Teのn型ドーピングによる強磁性の増大」

Conference Activities & Talks

  • (依頼講演)発光中心波長を制御した自己組織化InAs量子ドットによる近赤外広帯域光源開発と光干渉断層計への応用

    尾崎 信彦  [Invited]

    2024年電子情報通信学会総合大会 CI-3-02  2024.03.08  

  • (Invited) Near-infrared broadband light sources developed using self-assembled InAs quantum dots for OCT applications

    Nobuhiko Ozaki  [Invited]

    Joint Symposia on Optics, Optics & Photonics Japan 2022, 15aBJ1  2022.11.15  

  • (招待講演)半導体量子ドットの発光と生物・医療分野への応用 ~サイズによる発光波長制御がもたらす可能性~

    尾崎 信彦  [Invited]

    生物発光化学発光研究会 第37回学術講演会 IL-1  2022.11.12  

  • (招待講演)発光波長制御された自己組織化InAs量子ドットによる近赤外広帯域光源開発

    尾崎 信彦  [Invited]

    日本結晶成長学会 第51回結晶成長国内会議(JCCG-51) 31p-A08  2022.10.31  

  • Development of a Broadband Superluminescent Diode Based on Self-assembled Quantum Dots for Optical Coherence Tomography Application

    OZAKI Nobuhiko  [Invited]

    2019年電子情報通信学会ソサイエティ大会 C-3-40  2019.09.12   (大阪大学豊中キャンパス) 

  • 広帯域発光量子ドットと選択領域成長垂直共振器によるモノリシック多波長面発光

    ハドソン カール 勇気、横田 起季、奥野 光基、尾崎 信彦

    第71回応用物理学会春季学術講演会 25a-P02-2  2024.03.25  

  • InAs量子ドット埋め込み時の歪緩和層成長速度による発光波長変化

    横田 起季、ハドソン 勇気 カール、奥野 光基、尾崎 信彦

    第71回応用物理学会春季学術講演会 25a-P02-1  2024.03.25  

  • Shortwave-infrared emitter using bi-layer InAs quantum dots for integrated light source applications towards moisture measurements

    Koki Okuno, Tatsuki Yokota, Yuuki C. Hodson, and Nobuhiko Ozaki

    36th Int. Microprocesses and Nanotechnology Conf. (MNC 2023) 17P-1-14  2023.11.17  

  • 低群速度低分散フォトニック結晶導波路の広帯域化に向けた構造探索

    小田 奈菜穂, 小山 陽太, 尾崎 信彦

    応用物理学会関西支部2023年度第2回講演会 P-23  2023.11.02  

  • 可視光OCTによる多層膜工業製品の非破壊・高分解能構造評価

    小馬 啓輔, 尾崎 信彦, 笈田 大輔, 細田 真希, 宮地 邦男

    応用物理学会関西支部2023年度第2回講演会 P-27  2023.11.02  

  • InAs量子ドット光源によるSS-/SD-OCTの構築と性能評価

    山元 鉱稀, 渡辺 英一郎, 池田 直樹, 尾崎 信彦

    第84回応用物理学会秋季学術講演会 21p-P16-5  2023.09.21  

  • 水分量計測応用を目指した1.4µm帯発光二層積層InAs量子ドット

    奥野 光基, 横田 起季, ハドソン, 勇気, カール, 尾崎 信彦

    第84回応用物理学会秋季学術講演会 21p-P05-2  2023.09.21  

  • 自己組織化InAs量子ドットによる近赤外波長掃引レーザー開発と、その光干渉断層計への応用

    山元 鉱稀、尾崎 信彦

    応用物理学会関西支部2023年度第1回講演会 P-19  2023.06.05  

  • 二層積層InAs量子ドットへのキャッピングレート制御による発光長波長化

    奥野 光基、祝出 航佑、尾崎 信彦

    第70回応用物理学会春季学術講演会 15p-PA05-5  2023.03.15  

  • 高効率テラヘルツ波発生へ向けた低群速度・低分散フォトニック結晶導波路のヘテロ接合モデル(II)

    小山 陽太、小田 久哉、池田 直樹、杉本 喜正、尾崎 信彦

    第70回応用物理学会春季学術講演会 15p-PB05-9  2023.03.15  

  • Integrated heterostructure of photonic crystal waveguides for ultra-small terahertz source applications

    Yota Koyama, Hisaya Oda, Naoki Ikeda, Yoshimasa Sugimoto, Nobuhiko Ozaki

    35th Int. Microprocesses and Nanotechnology Conf. (MNC 2022) 10P-3-1  2022.11.10  

  • Dot-in-a-Well構造におけるInAs量子ドットの構造および発光特性変化のメカニズム

    奥野 光基, 岡田 直樹, 尾崎 信彦

    応用物理学会関西支部2022年度75周年記念講演会 P-22  2022.11.07  

  • 1µm帯広帯域高強度発光InGaAs薄膜の成長条件の検討(II)

    祝出 航佑、奥野 光基、尾崎 信彦

    第83回応用物理学会秋季学術講演会 22p-P10-5  2022.09.22  

  • 光コヒーレンストモグラフィーによるマイクロニードル溶解過程定量評価

    尾崎 信彦, 玉置 将之, 大島 仁, 平岡 玄理, 笈田 大輔, 細田 真希, 宮地 邦男

    第69回応用物理学会春季学術講演会 24p-P06-2  2022.03.24  

  • 高効率テラヘルツ波発生へ向けた低群速度・低分散フォトニック結晶導波路のヘテロ接合モデル

    小山 陽太, 尾崎 信彦, 小田 久哉, 池田 直樹, 杉本 喜正

    第69回応用物理学会春季学術講演会 24p-P09-1  2022.03.24  

  • 1µm帯広帯域高強度発光InGaAs薄膜の成長条件の検討

    祝出 航佑, 尾崎 信彦

    第69回応用物理学会春季学術講演会 23p-P07-5  2022.03.23  

  • Near-infrared dual-wavelength surface-emitting light source using a vertical cavity resonating with discrete emission wavelengths of InAs quantum dots

    J. Oshima, N. Ozaki, H. Oda, E. Watanabe, H. Ohsato, N. Ikeda, Y. Sugimoto, and R. Hogg

    34th International Microprocesses and Nanotechnology Conference (MNC 2021) 28B-3-4  2021.10.28  

  • ヘテロ接合型低群速度・低分散フォトニック結晶導波路を用いた高効率テラヘルツ波発生の検討

    小山 陽太, 尾崎 信彦, 小田 久哉, 池田 直樹, 杉本 喜正

    応用物理学会関西支部2021年度第2回講演会 P-37  2021.10.15  

  • 1ミクロン帯広帯域発光InGaAs薄膜の作製と評価

    祝出 航佑, 尾崎 信彦

    応用物理学会関西支部2021年度第2回講演会 P-38  2021.10.15  

  • InAs量子ドットを利用した近赤外多波長面発光レーザの検討

    大島 仁、尾崎 信彦、小田 久哉、渡辺 英一郎、大里 啓孝、池田 直樹、杉本 喜正、R. Hogg

    第82回応用物理学会秋季学術講演会 23a-P11-12  2021.09.23  

  • Influence of In Segregation on InAs Quantum Dots Growth in Dot-in-a-Well

    N. Okada, D. Ikuno, T. Wang, J. Oshima, and N. Ozaki

    21st Int. Conf. Molecular Beam Epitaxy (21st ICMBE) ConfCode: 118  2021.09.06  

  • Broadband Emission from Stacked InAs Quantum Dots Embedded with GaAs Layers Under Various Growth Rates for Broadband Light Source Applications

    T. Wang, J. Oshima, H. Ohsato, E. Watanabe, N. Ikeda, Y. Sugimoto, and N. Ozaki

    21st Int. Conf. Molecular Beam Epitaxy (21st ICMBE) ConfCode: 113  2021.09.06  

  • 1.1µm帯InAs量子ドット波長掃引レーザを用いたSS-OCTの構築と評価

    辻 敏弥, 尾崎 信彦, 渡辺 英一郎, 大里 啓孝, 池田 直樹, 杉本 喜正, David T. D. Childs, Richard A. Hogg

    第68回応用物理学会春季学術講演会 17p-P02-4  2021.03.17  

  • GaAsキャッピング層の成長レートによるInAs量子ドットの発光波長制御及び広帯域光源への応用

    王 涛, 大島 仁, 祝出 航佑, 尾崎 信彦

    応用物理学会関西支部2020年度第1回+第2回合同講演会 P-14  2021.01.27  

  • InAs量子ドットを用いた近赤外広帯域面発光レーザの検討

    大島 仁, 王 涛, 尾崎 信彦

    応用物理学会関西支部2020年度第1回+第2回合同講演会 P-15  2021.01.27  

  • Tunable Laser with Emission-Wavelength-Controlled InAs Quantum dots for 1.1-µm Waveband Swept-Source Optical Coherence Tomography Applications

    Toshiya Tsuji, Nobuhiko Ozaki, Sho Yamauchi, Katsuya Onoue, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, David T, D. Childs, nd Richard, A. Hogg

    the 2020 International Conference on Solid State Devices and Materials (SSDM2020) E-4-03  2020.09.29  

  • GaAsキャッピング層の成長レートによる埋め込まれたInAs-QDのサイズおよび発光波長制御

    王 涛, 大島 仁, 尾崎 信彦, 池田 直樹, 杉本 喜正

    第81回応用物理学会秋季学術講演会 9p-Z01-14  2020.09.09   応用物理学会

  • OCTを用いた溶解型マイクロニードルの溶解過程観察

    平岡 玄理、尾崎 信彦、古城 健司、及川 陽一、宮地 邦男

    第67回応用物理学会春季学術講演会 15a-PA2-1  2020.03.15   応用物理学会

  • Dot-in-a-Well構造におけるInAs量子ドット成長に対するIn偏析の影響(Ⅱ)

    岡田 直樹、生野 大吾、王 涛、大島 仁、尾崎 信彦

    第67回応用物理学会春季学術講演会  2020.03.13   応用物理学会

  • GaAsキャップ層により埋め込まれたInAs量子ドットのキャップ層成長レートによる広帯域発光中心波長制御

    王 涛、岡田 直樹、大島 仁、尾崎 信彦、池田 直樹、杉本 喜正

    第67回応用物理学会春季学術講演会 12p-D215-9  2020.03.12   応用物理学会

  • 広帯域波長掃引光源を目指した多波長InAs量子ドット利得チップの光利得評価

    辻 敏弥, 尾上 克也, 生野 大吾, 尾崎 信彦, 大里 啓孝, 渡辺 英一郎, 池田 直樹, 杉本 喜正, D. T. D. Childs, R. A. Hogg

    応用物理学会関西支部2019年度第3回講演会 P-09  2020.02.21  

  • InGaAs量子井戸内に埋め込んだInAs量子ドット成長に対する成長基板上へのIn偏析の影響

    岡田 直樹, 生野 大吾, 王 涛, 尾崎 信彦

    応用物理学会関西支部2019年度第2回講演会 P-21  2019.11.08  

  • 光コヒーレンストモグラフィーを用いた溶解型マイクロニードルの生体サンプルへの穿刺および溶解経過観察

    平岡 玄理, 尾崎 信彦, 古城 健司, 及川 陽一, 宮地 邦男

    応用物理学会関西支部2019年度第2回講演会 P-20  2019.11.08  

  • Characterization of 1.1-μm-Centered Tunable Laser Based on InAs Quantum Dots for Swept-Source Optical Coherence Tomography Application

    Nobuhiko Ozaki, David Childs, Aleksandr Boldin, Hirotaka Ohsato, EiichiroWatanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard Hogg

    7th Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemionNano2019) O-08  2019.09.25  

  • 波長掃引型光コヒーレンストモグラフィー光源応用に向けたInAs量子ドットベース1.1 µm帯波長可変レーザーの特性評価

    尾崎 信彦, David Childs, Aleksandr Boldin, 大里 啓孝, 渡辺 英一郎, 池田 直樹, 杉本 喜正, Richard Hogg

    第80回応用物理学会秋季学術講演会 20p-E204-5  2019.09.20   応用物理学会

  • 波長掃引光源応用を目指した自己組織化InAs量子ドットの光利得評価

    辻 敏弥, 尾上 克也, 生野 大吾, 尾崎 信彦, 大里 啓孝, 渡辺 英一郎, 池田 直樹, 杉本 喜正, D. Childs, R. A. Hogg

    第80回応用物理学会秋季学術講演会 19a-PA3-4  2019.09.19   応用物理学会

  • 埋め込まれたInAs量子ドットの構造および発光波長のRHEED強度計測による評価

    王 涛, 生野 大吾, 岡田 直樹, 尾崎 信彦

    応⽤物理学会関⻄⽀部2019年度第1回講演会 P-37  2019.06.20   (関西学院大学) 

  • Investigation of InAs Quantum Dot Deformation During Capping with an InGaAs Layer Using Time-resolved RHEED Measurements

    Daigo Ikuno, Tao Wang, Naoki Okada, Nobuhiko Ozaki

    Compound Semiconductor Week 2019(CSW2019) MoP-A-8  2019.05.20  

  • 発光波長制御InAs量子ドットを用いた1.1um帯外部共振器型波長可変レーザー

    尾崎 信彦, David Childs、Aleksandr Boldin, 生野 大吾, 尾上 克也, 大里 啓孝, 渡辺 英一郎, 池田 直樹, 杉本 喜正, Richard Hogg

    第66回応用物理学会春季学術講演会 12a-W611-11  2019.03.12  

  • DWELL構造におけるInAs量子ドット成長に対するIn偏析の影響

    岡田 直樹, 生野 大吾, 王 涛, 大河内 俊介, 尾崎 信彦

    第66回応用物理学会春季学術講演会 11p-PA4-11  2019.03.11  

  • 差周波テラヘルツ光源への応用に向けた低群速度・低分散2次元AlGaAsフォトニック結晶導波路の作製および光学評価

    中濱 照之, 尾崎 信彦, 小田 久哉, 池田 直樹, 杉本 喜正

    第66回応用物理学会春季学術講演会 10p-PB3-12  2019.03.10  

  • 可視光OCTによる半導体薄膜構造の非破壊内部観察

    石田 一将, 尾崎 信彦, 池田 直樹, 杉本 喜正

    第66回応用物理学会春季学術講演会 10a-PA2-3  2019.03.10  

  • 医療用OCT応用を目指した量子ドットベース近赤外広帯域光源開発と発光取出し効率向上の検討

    尾崎信彦, 小野篤史

    生体医歯工学共同研究拠点成果報告会 P096  2019.03.08  

  • OCTによる溶解型マイクロニードルの非接触観察

    平岡 玄理, 尾崎 信彦, 古城 健司, 及川 陽一, 宮地 邦男

    応⽤物理学会関⻄⽀部平成30年度第3回講演会 P-07  2019.02.15  

  • Tunable external-cavity laser diode based on self-assembled InAsquantum dots for swept-source optical coherence tomography applications at 1100 nm

    Nobuhiko Ozaki, David Childs, Aleksandr Boldin, Daigo Ikuno, Katsuya Onoue, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard Hogg

    SPIE Photonics West 2019 10939-36  2019.02.06  

  • (招待講演)InAs量子ドットを用いた波長掃引光源開発とSS-OCTへの応用

    尾崎 信彦  [Invited]

    第21回光科学若手研究会  2018.11.24  

  • 2次元GaAsフォトニック結晶導波路の低分散モード設計によるテラヘルツ差周波発生の高効率化

    中濱 照之, 尾崎 信彦, 小田 久哉, 池田 直樹, 杉本喜正

    第79回応用物理学会秋季学術講演会 19p-225B-14  2018.09.19  

  • InGaAs Layers Grown on GaAs with Optimized Growth Conditions to Obtain Broadband Emission Spectra Centered at 1.05 um

    N. Ozaki, S. Kanehira, S. Ohkouchi, H. Ohsato, E. Watanabe, N. Ikeda, Y.Sugimoto

    20th Int.Conf. Molecular Beam Epitaxy (MBE2018) Tu-A1-5  2018.09.04  

  • Characterization of InAs QDs Buried in a Capping Layer by Time-Resolved Reflection High Energy Electron Diffraction Intensity Measurements

    D. Ikuno, N. Ozaki

    20th Int. Conf. Molecular Beam Epitaxy (MBE2018) Mo-P-20  2018.09.03  

  • Reflection Spectra from SiC Substrate with Circular-Slot Antennas and Influence of Surface-Plasmon Polaritons and on Surface-Phonon Polaritons

    Kenichi Kasahara, Nobuyuki Umemori, Toyonari Yaji, Nobuhiko Ozaki, Naoki Ikeda, Yoshimasa Sugimoto

    The 12th International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials'2018) P-52  2018.08.29  

  • Numerical Simulation of Highly Efficient Terahertz Wave Generation in a Low-group-velocity and Low-dispersion 2D GaAs Photonic Crystal Waveguide

    Teruyuki Nakahama, Nobuhiko Ozaki, Hisaya Oda, Naoki Ikeda, Yoshimasa Sugimoto

    The 40th Progress In Electromagnetics Research Symposium (PIERS2018)  2018.08.02  

  • 原子移動ラジカル重合を用いて合成した高分子被覆セレン化銀量子ドットの水溶液中における分散安定性

    中原佳夫, 国津洋希, 尾崎信彦, 田中陸生, 矢嶋摂子

    日本分析化学会第78回分析化学討論会 P2037  2018.05.27  

  • (招待講演)自己組織化InAs/GaAs量子ドットを用いた近赤外広帯域光源デバイス開発と光コヒーレンストモグラフィーへの応用

    尾崎 信彦  [Invited]

    応用物理学会関西支部平成30年度第1回講演会「ナノ物性・ナノ構造デバイス研究の最前線~関西若手研究者からの情報発信~」  2018.05.11  

  • サブµmの分解能をもつ工業用途可視光OCTを用いた半導体光導波路の非破壊計測

    石田一将, 尾崎信彦, 池田直樹, 杉本喜正

    応用物理学会関西支部平成30年度第1回講演会 P-24  2018.05.11  

  • RHEED強度計測によるキャップ層埋め込みInAs量子ドットの特性評価

    生野 大吾、尾崎 信彦

    第65回応用物理学会春季学術講演会 18p-P8-6  2018.03.18   応用物理学会

  • InAs量子ドットベース波長掃引光源を用いたSwept Source‐OCTの構築およびOCT画像深達度拡大の検証

    山内翔, 尾崎信彦, 大里啓孝, 渡辺英一郎, 池田直樹, 杉本喜正, 古城健司, 及川陽一, 宮地邦男, CHILDS D.T.D, HOGG R.A

    第65回応用物理学会春季学術講演会 17p-P3-15  2018.03.17   (早稲田大学西早稲田キャンパス) 

  • 波長掃引光源用InAs量子ドットベース利得チップの作製と特性評価

    尾上克也, 生野大吾, 山内翔, 尾崎信彦, 大里啓孝, 渡辺英一郎, 池田直樹, 杉本喜正, 古城健司, 及川陽一, 宮地邦男, CHILDS D.T.D, HOGG R.A

    第65回応用物理学会春季学術講演会 17p-P3-14  2018.03.17  

  • Characterisation of photonic crystal surface-emitting lasers via an in-line measurement process

    Ben King, Guangrui Li, Pavlo Ivanov, Nasser Babazadeh, Nobuhiko Ozaki, David T, D. Childs, Richard, A. Hogg

    SPIE Photonics West 10526-22  2018.01.30  

  • 高効率テラヘルツ光源への応用を目指した低群速度・低分散2次元GaAsフォトニック結晶導波路の構造最適化

    中濱照之, 尾崎信彦, 小田久哉, 池田直樹, 杉本喜正

    電子情報通信学会LQE研究会  2018.01.25  

  • 近赤外波長1ミクロン帯における高輝度・広帯域光源用材料の開発

    尾崎 信彦

    材料 新技術説明会  2018.01.16  

  • 低群速度・低分散2次元GaAsフォトニック結晶導波路による高効率テラヘルツ波発生法の検討

    中濱照之, 尾崎信彦, 小田久哉, 池田直樹, 杉本喜正

    第28回光物性研究会 IA-24  2017.12.08  

  • Non-destructive Inspection of Semiconductor Optical Waveguide Using Optical Coherence Tomography with Visible Broadband Light Source

    K. Ishida, N. Ozaki, N. Ikeda, and Y. Sugimoto

    The 22nd Microoptics Conference (MOC2017) P-53  2017.11.21  

  • (招待講演)自己組織化InAs量子ドットを用いた近赤外広帯域光源開発とOCT応用

    尾崎 信彦  [Invited]

    徳島大学大学院理工学研究部フロンティア研究センター講演会  2017.11.20  

  • 半導体量子ドットを用いた近赤外広帯域光源の開発と医療用OCTへの応用

    尾崎信彦

    大阪府立大学・和歌山大学工学研究シーズ合同発表会  2017.10.31  

  • 可視光OCTによる半導体光導波路の非破壊・非接触計測

    石田一将, 尾崎信彦, 池田直樹, 杉本喜正

    第78回応用物理学会秋季学術講演会 7a-PA5-1  2017.09.07  

  • フォトニック結晶導波路におけるスローライトを利用した高効率テラヘルツ波発生の検討

    中濱照之, 尾崎信彦, 小田久哉, 池田直樹, 杉本喜正

    第78回応用物理学会秋季学術講演会 7p-PA1-9  2017.09.07  

  • 二次元フォトニック結晶導波路と量子ドットによる超小型多波長近赤外光源

    尾崎 信彦  [Invited]

    神戸大学大学院工学研究科セミナー  2017.09.01  

  • Surface-phonon polaritons appearing on the surface of SiC and the potential of their interaction with surface-plasmon polaritons

    K. Kasahara, Y. Yamamoto, J. Miyata, N. Umemori, T. Yaji, N. Ozaki, N. Ikeda, and Y. Sugimoto

    11th Int. Cong. Engineered Material Platforms for Novel Wave Phenomena (Metamaterials 2017) P-8  2017.08.30  

  • High-axial-resolution Optical Coherence Tomography Imaging Using Broadband Superluminescent Diodes Based on Self-assembled InAs Quantum Dots

    S. Yamauchi, H. Shibata, N. Ozaki, N. Ikeda, Y. Sugimoto, K. Furuki, Y. Oikawa, K.Miyaji, D. T. D. Childs, and R. A. Hogg

    The 24th Congress of the International Comission for Optics (ICO-24) P6-02  2017.08.22  

  • (Invited) InAs/GaAs quantum dots grown using As2 source in molecular beam epitaxy for near-infrared broadband light source application

    Nobuhiko Ozaki, Yuma Hayashi, Shunsuke Ohkouchi, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto  [Invited]

    The Collaborative Conference on Crystal Growth (EMN 3CG 2017) B17  2017.08.10  

  • InAs量子ドットを用いたスーパールミネッセントダイオードの温度および注入電流依存性評価

    尾上 克也, 尾崎 信彦, 渡辺 英一郎, 大里 啓孝, 池田 直樹, 杉本 喜正, D. Childs, R. Hogg

    日本材料学会半導体エレクトロニクス部門平成29年度第一回研究会  2017.07.15  

  • キャップ層埋め込み時のInAs量子ドットからのRHEED強度計測による特性評価

    生野 大吾,尾崎 信彦

    日本材料学会半導体エレクトロニクス部門平成29年度第一回研究会  2017.07.15  

  • 成長条件最適化によるGaAs基板上InGaAs薄膜からの1um帯高輝度・広帯域発光の実現

    兼平 真吾, 尾崎 信彦, 大河内 俊介, 池田 直樹, 杉本 喜正

    日本材料学会半導体エレクトロニクス部門平成29年度第一回研究会  2017.07.15  

  • 3次元界面構造を持つInGaAs薄膜からの1μm帯高輝度・広帯域発光

    兼平真吾, 林佑真, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正, HOGG Richard A

    第64回応用物理学会春季学術講演会 17p-P2-9  2017.03.17  

  • 量子ドットSLD光源を用いた高分解能OCT画像取得

    山内翔, 尾崎信彦, 大里啓孝, 渡辺英一郎, 池田直樹, 杉本喜正, 古城健司, 宮地邦男, CHILDS D, HOGG R

    第64回応用物理学会春季学術講演会 16p-P11-13  2017.03.16  

  • As<sub>2</sub>分子線を用いて成長したInAs量子ドットへのGaAsキャップによる構造変化

    林佑真, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正

    第64回応用物理学会春季学術講演会 15a-313-7  2017.03.15  

  • 医療用OCT光源に向けた半導体ナノ材料開発

    尾崎 信彦

    メディカルジャパン2017大阪(第3回日本医療総合展)関西広域連合研究成果企業化セミナー  2017.02.17  

  • Gallium Nitride Light Sources for Optical Coherence Tomography

    Goldberg Graham R, Ivanov Pavlo, Ozaki Nobuhiko, Childs David T. D, Groom Kristian M, Kennedy Kenneth L, Hogg Richard A

    SPIE Photonics West 2017 10104-66  2017.02.02  

  • Characterisation of MOVPE InAs/GaAs QDs grown by MOVPE with and without strain balancing

    T. S. Roberts, E. Clarke, B. J. Stevens, I. G. Tooley, J. R. Orchard, I. Farrer, D. T. D. Childs, N. Babazadeh, N. Ozaki, D. J. Mowbray, R. A. Hogg

    SPIE Photonics West 2017 10114-34  2017.02.01  

  • ヘテロ接合型2次元GaAsフォトニック結晶導波路とInAs量子ドット融合による超小型多波長近赤外光源の開発

    内田 翔, 尾崎 信彦, 小田 久哉, 池田 直樹, 杉本 喜正

    電子情報通信学会LQE研究会 LQE2016-128  2017.01.19  

  • InAs量子ドットを含む直列ヘテロ接合型GaAs二次元フォトニック結晶導波路からのパーセル効果による多波長増強光

    内田 翔, 尾崎 信彦, 小田 久哉, 池田 直樹, 杉本 喜正

    第27回光物性研究会 IIB-53  2016.12.02  

  • 三種類の炭素材料における水中でのレーザー照射による水素発生とナノ粒子生成

    山本 翔太, 尾崎 信彦, 秋元 郁子

    第27回光物性研究会 IB-23  2016.12.02  

  • Probing enhancement of an electric field perpendicular to an optical antenna surface using SiC surface phonon polaritons

    J. Miyata, Y. Yamamoto, Y. Kunichika, T. Kawano, N. Umemori, K. Kasahara, N. Ozaki, N. Ikeda, H. Oosato, and Y. Sugimoto

    The 10th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics (Metamaterials'2016) PSII-35  2016.09.21  

  • 量子ドットを含む直列ヘテロ接合型フォトニック結晶導波路における多波長発光増強と光伝搬特性の評価

    内田翔, 尾崎信彦, 小田久哉, 池田直樹, 杉本喜正

    第77回応用物理学会秋季学術講演会 16a-B4-13  2016.09.16  

  • As2分子線を用いて成長したInAs量子ドットへのGaAsキャップの影響

    林 佑真、尾崎 信彦、大河内 俊介、池田 直樹、杉本 喜正

    第77回応用物理学会秋季学術講演会 15a-P11-5  2016.09.15   応用物理学会

  • 光アンテナを搭載した量子井戸構造での反射率測定

    梅森信行, 宮田純一, 山本悠人, 笠原健一, 尾崎信彦, 池田直樹, 杉本喜正

    第77回応用物理学会秋季学術講演会 15p-B8-11  2016.09.15  

  • バンドギャップエネルギーを制御したInAs量子ドットを含む中間バンド型GaAs太陽電池の特性比較

    池田理彩, 林佑真, 尾崎信彦, 大里啓孝, 渡辺英一郎, 池田直樹, 杉本喜正

    第77回応用物理学会秋季学術講演会 14p-P21-26  2016.09.14  

  • Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2

    T. S. Roberts, B. J. Stevens, E. Clarke, I. Tooley, J. Orchard, I. Farrer, D. T. D. Childs, N. Babazadeh, N. Ozaki, D. Mowbray, R. A. Hogg

    The 25th International Semiconductor Laser Conference (ISLC2016) WE43  2016.09.14  

  • Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography Applications

    G. Goldberg, P. Ivanov, N. Ozaki, D. Childs, K. Groom, K. Kennedy, R. Hogg

    The 25th International Semiconductor Laser Conference (ISLC2016) WE63  2016.09.14  

  • High-Intensity and Broadband Emission Centered at ~1 um from InGaAs 3D Nanostructures Formed by High-Temperature Molecular-Beam-Epitaxy Growth

    N. Ozaki, S. Kanehira, Y. Hayashi, S. Ohkouchi, N. Ikeda, Y. Sugimoto

    19th Int. Conf. Molecular Beam Epitaxy (MBE2016) Mo-P-68  2016.09.05  

  • 2光子励起によるInAs量子ドット埋め込みGaAsフォトニック結晶導波路型レーザの室温発振

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    電子情報通信学会LQE研究会 LQE2016-36  2016.08.25  

  • Enhancement of spontaneous emission from InAs quantum dots embedded in photonic crystal waveguides via the Purcell effect and its application to an ultra-small multi-wavelength light source

    Sho Uchida, Nobuhiko Ozaki, Hisaya Oda, Naoki Ikeda, and Yoshimasa Sugimoto

    The 2016 International Symposium Advanced Materials Reseach (ISAMR 2016) P20  2016.08.13   Asia Pacific Society for Materials Research

  • (Invited) High axial resolution imaging of OCT using a broadband NIR superluminescent diode based on self-assembled InAs quantum dots

    Nobuhiko Ozaki  [Invited]

    The 2016 Int. Symp. Advanced Materials Reseach (ISAMR 2016)  2016.08.12  

  • Opto-electronic Properties of Strain Compensated InAs/GaAs Quantum Dot Devices Grown by MOVPE

    T. S. Roberts, B. J. Stevens, E. Clarke, I. Tooley, J. Orchard, I. Farrer, D. T. D. Childs, N. Babazadeh, N. Ozaki, D. Mowbray, R. A. Hogg

    UK Semiconductors 2016 B-O-4  2016.07.07  

  • Emission wavelength variation of InAs quantum dots grown on GaAs using As2 molecules in molecular beam epitaxy

    Yuma Hayashi, Nobuhiko Ozaki, Shunsuke Ohkouchi, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, and Yoshimasa Sugimoto

    2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 MoP-ISCS-037  2016.06.27  

  • Ultra-small Multi-wavelength Near-infrared Light Source Using a Heterojunction Photonic Crystal Waveguide and InAs Quantum Dots

    Nobuhiko Ozaki, Sho Uchida, Hisaya Oda, Naoki Ikeda, and Yoshimasa Sugimoto

    17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17) TuP16  2016.03.29  

  • 可視光OCTとFDTDシミュレーションによる半導体光デバイス微細加工における新規非破壊膜厚測定法

    西剛史, 尾崎信彦, 及川陽一, 宮地邦男, 大里啓孝, 渡辺英一郎, 池田直樹, 杉本喜正

    第63回応用物理学会春季学術講演会 21p-P15-12  2016.03.21  

  • As<sub>2</sub>分子線を用いて成長したInAs‐QDによる電流注入型広帯域光源

    林佑真, 尾崎信彦, 大河内俊介, 大里啓孝, 渡辺英一郎, 池田直樹, 杉本喜正

    第63回応用物理学会春季学術講演会 20p-P16-6  2016.03.20  

  • 広帯域発光量子ドットを埋込んだ直列ヘテロ接合型フォトニック結晶導波路による超小型近赤外多波長光源

    内田翔, 尾崎信彦, 小田久哉, 池田直樹, 杉本喜正

    第63回応用物理学会春季学術講演会 20p-P4-11  2016.03.20  

  • 広帯域発光量子ドットを埋め込んだ直列ヘテロ接合型フォトニック結晶導波路からの発光特性

    小田久哉, 山中明生, 内田翔, 尾崎信彦, 池田直樹, 杉本喜正

    第63回応用物理学会春季学術講演会 20p-P4-12  2016.03.20  

  • 異なるバンドギャップエネルギーを持つInAs-QDを用いた中間バンド型GaAs太陽電池の特性比較

    池田理彩, 林 佑真, 尾崎信彦, 大里啓孝, 渡辺英一郎, 池田直樹, 杉本喜正

    第26回光物性研究会 IIIB-105  2015.12.12  

  • As2/As4分子線によるInAs/GaAs量子ドット成長と光学特性の変化

    林 佑真, 尾崎 信彦, 大河内 俊介, 大里 啓孝, 渡辺 英一郎, 池田 直樹, 杉本 喜正

    日本材料学会 半導体エレクトロニクス部門 平成27年度第2回研究会  2015.11.21   日本材料学会

  • 工業製品検査用の非破壊・非接触光断層計測システム

    尾崎 信彦

    第12回JST/CIC東京「新技術説明会」  2015.11.19  

  • Spectral-Domain Optical Coherence Tomography with a White Light Developed for Optical Device Fabrication

    T. Nishi, N. Ozaki, H. Ohsato, E. Watanabe, N. Ikeda, Y. Sugimoto

    The 20th Microoptics Conference (MOC'15), H-42  2015.10.27  

  • Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with Segmented Contacts

    N. Ozaki, T. Yasuda, H. Shibata, H. Ohsato, E. Watanabe, N. Ikeda, Y. Sugimoto, D. T. D. Childs, and R. A. Hogg

    2015 International Conference on Solid State Devices and Materials (SSDM2015), P-7-7  2015.09.29  

  • 分割電極を用いた広帯域多波長InAs量子ドットSLDの光学利得測定

    尾崎 信彦, David Childs, 保田拓磨, 大里 啓孝, 渡辺 英一郎, 池田 直樹, 杉本 喜正, Richard Hogg

    第76回応用物理学会秋季学術講演会 16p-2E-8  2015.09.16   応用物理学会

  • As2分子線を用いたInAs-QD成長と1.05μm帯広帯域光源応用の検討

    林 佑真, 尾崎 信彦, 大河内 俊介, 大里 啓孝, 渡辺 英一郎, 池田 直樹, 杉本 喜正

    第76回応用物理学会秋季学術講演会 13p-PB2-9  2015.09.13   応用物理学会

  • (Invited) Optical coherence tomography using a low-coherence light source based on emission-wavelength-controlled self-assembled InAs quantum dots

    Nobuhiko Ozaki, Hiroshi Shibata, Takuma Yasuda, Hirotaka Ohosato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Kenji Furuki, Kunio Miyaji, Shunsuke Ohkouchi, Richard A. Hogg  [Invited]

    5th Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015) I-32  2015.09.09  

  • 多波長InAs量子ドットベース広帯域SLD開発とOCT光源への応用

    尾崎信彦

    第3回和歌山大学・徳島大学合同光・ナノテクノロジー研究会  2015.08.08  

  • Long Wavelength & High Areal Density InAs/GaAs QDs Grown by MOVPE

    T.S. Roberts, B.J. Stevens, D.T.D Childs, N. Babazadeh, E. Clarke, N. Ozaki, R. A. Hogg

    16th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XVI)  2015.06  

  • OCT光源応用を目指した自己組織化InAs量子ドットベース近赤外広帯域光源

    尾崎信彦、保田拓磨、柴田弘、大河内俊介、渡辺英一郎、大里啓孝、池田直樹、杉本喜正、Richard Hogg

    電子情報通信学会LQE研究会 LQE2015-5  2015.05.21  

  • (Invited) Progress in MBE growth technologies for OCT light sources -Emission wavelength control and selective-area growth of InAs quantum dots-

    Nobuhiko Ozaki  [Invited]

    Int. Workshop on Photonics for Imaging and Sensing  2015.03.27  

  • Superluminescent Diode with Near-Infrared Broadband Emission using Self-assembled InAs Quantum Dots for Optical Coherence Tomography

    N. Ozaki, T. Yasuda, H. Shibata, S. Ohkouchi, H. Ohsato, E. Watanabe, N. Ikeda, Y. Sugimoto, D. T. D. Childs, and R. A. Hogg

    The 18th European Molecular Beam Epitaxy Workshop (EuroMBE) Mo1.3  2015.03.16  

  • 可視光広帯域光源を用いたμm-OCTの半導体微細加工プロセスへの応用

    西 剛史、尾崎 信彦、大里 啓孝、渡辺 英一郎、池田 直樹、杉本 喜正

    第62回応用物理学会春季学術講演会 13a-P6-7  2015.03.13   応用物理学会

  • 量子ドット増感型太陽電池の量子ドット生成法に対するフォトキャリア取り出し効率の比較

    家山 昂、尾崎 信彦、大渕 隆文、福田 直晃、加藤 美奈子、滝谷 俊夫

    第62回応用物理学会春季学術講演会 13a-P19-14  2015.03.13   応用物理学会

  • 多波長InAs量子ドットSLD光源を用いたSD-OCTによる植物サンプル断層画像取得

    柴田 弘、保田 拓磨、尾崎 信彦、大河内 俊介、池田 直樹、大里 啓孝、渡辺 英一郎、杉本 喜正、古城 健司、宮地 邦男、Richard Hogg

    第62回応用物理学会春季学術講演会 12a-P4-5  2015.03.12   応用物理学会

  • AlGaAsフォトニック結晶スラブ導波路による和周波発生

    小田 久哉、夛田 量宏、山中 明生、尾崎 信彦、池田 直樹、杉本 喜正

    第62回応用物理学会春季学術講演会 11a-P3-6  2015.03.11   応用物理学会

  • 2光子励起によるInAs量子ドット埋め込みGaAsフォトニック結晶スラブ導波路型レーザー

    小田久哉、相沢崇裕、山中明生、尾崎信彦、池田直樹、杉本喜正

    第50回応用物理学会北海道支部・第11回日本光学会北海道地区合同学術講演会 A-12  2015.01.09  

  • 近赤外多波長InAs 量子ドットSLD 光源を用いたSD-OCT によるバイオサンプル断層画像取得

    柴田弘、保田拓磨、尾崎信彦、大河内俊介、池田直樹、大里啓孝、渡辺英一郎、杉本喜正、古城健司、宮地邦男、R. A. Hogg

    第25回光物性研究会 IIIB-103  2014.12.13  

  • 量子ドット増感型太陽電池における光学特性の量子ドット/酸化チタン粒子界面構造依存性

    家山昂、尾崎信彦、大渕隆文、福田直晃、加藤美奈子、滝谷俊夫

    第25回光物性研究会 IIA-51  2014.12.13  

  • Spectral and Temporal Photoluminescence Behavior of Colloidal PbS Quantum Dots

    S. Kitamura, M. Senshu, H. Tokushige, T. Katsuyama, N. Ozaki, I. Tanaka and Y. Sugimoto

    The 4th International Symposium on Photonics and Electronics Convergence (ISPEC 2014) -Advanced Nanophotonics and Silicon Device Systems-, P-2  2014.11.18  

  • Broadband near-infrared light source using multi-color InAs quantum dots for optical coherence tomography

    T. Yasuda, N. Ozaki, H. Shibata, S. Ohkouchi, N. Ikeda, H. Ohsato, E. Watanabe, Y. Sugimoto, and R. A. Hogg

    Int. Symp. Recent Progress of Photonic Devices and Materials P02  2014.11.14  

  • 原子移動ラジカル重合を用いて合成した水溶性高分子被覆近赤外蛍光性量子ドットの水溶液中における蛍光特性

    国津洋希, 川ノ上貴裕, 中原佳夫, 尾崎信彦, 玉井聡行, 木村恵一

    日本分析化学会第63年会 J3002Y  2014.09.19  

  • 多波長InAs量子ドットの高次励起準位間発光を用いた電流注入型超広帯域近赤外光源

    保田拓磨, 柴田弘, 大河内俊介, 池田直樹, 大里啓孝, 渡辺英一郎, 杉本喜正, HOGG R.A, 尾崎信彦

    第75回応用物理学会秋季学術講演会 18p-C6-14  2014.09.18  

  • 2光子励起によるInAs量子ドット埋め込みGaAsフォトニック結晶スラブ導波路型レーザー(3)

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第75回応用物理学会秋季学術講演会 17p-PA2-8  2014.09.17  

  • Optical Coherence Tomography Imaging by Using a Superluminescent Diode Based on InAs/GaAs Quantum Dots

    H. Shibata, T. Yasuda, S. Ohkouchi, N. Ikeda, H. Ohsato, E. Watanabe, Y. Sugimoto, K. Furuki, K. Miyaji, R.A. Hogg, and N. Ozaki

    The 2014 International Conference on Solid State Devices and Materials (SSDM2014), B-3-2  2014.09.10  

  • 量子ドット増感型太陽電池における 量子ドットとTiO2界面の影響

    家山昂、尾崎信彦、加藤美奈子、大渕隆文、福田 直晃、滝谷俊夫

    第33回電子材料シンポジウム Fr1-25  2014.07.10   電子材料シンポジウム委員会

  • 発光波長制御されたInAs量子ドットを用いたOCT用広帯域光源

    尾崎信彦、保田拓磨、柴田弘、大河内俊介、大里啓孝、渡辺英一郎、池田直樹、杉本喜正、R. A. Hogg

    第33回電子材料シンポジウム Fr1-17  2014.07.10   電子材料シンポジウム委員会

  • OCT用近赤外広帯域光源を目指した自己組織化InAs量子ドットの発光波長制御技術

    尾崎 信彦  [Invited]

    神戸大学大学院工学研究科セミナー  2014.04.11  

  • 溶媒分散性SiO<sub>2</sub>@TiO<sub>2</sub>コア‐シェル型ナノ粒子の合成とその光化学物性

    林崎将大, 中原佳夫, 尾崎信彦, 玉井聡行, 木村恵一

    日本化学会第94春季年会 3C5-42  2014.03.29  

  • 溶媒分散性SiO2@TiO2コア-シェル型ナノ粒子の合成とその光化学物性

    林崎将大、中原佳夫、尾崎信彦、玉井聡行、木村恵一

    日本化学会第94春季年会 3C5-42  2014.03.29   日本化学会

  • 多波長InAs量子ドットを用いたOCT光源用SLDの作製

    保田拓磨, 柴田弘, 尾崎信彦, 大河内俊介, 池田直樹, 大里啓孝, 渡辺英一郎, 杉本喜正, HOGG R.A

    第61回応用物理学会春季学術講演会 17p-E11-10  2014.03.17  

  • 2光子励起によるInAs量子ドット埋め込みGaAsフォトニック結晶スラブ導波路型レーザー(2)

    小田久哉, 相沢崇裕, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第61回応用物理学会春季学術講演会 17a-PA1-10  2014.03.17  

  • InAs量子ドットSLDを用いたOCT画像取得

    柴田弘, 保田拓磨, 尾崎信彦, 大河内俊介, 池田直樹, 大里啓孝, 渡辺英一郎, 杉本喜正, HOGG R.A

    第61回応用物理学会春季学術講演会 17p-E11-11  2014.03.17  

  • 医療OCT応用に向けた新規半導体光源開発

    尾崎信彦

    和歌山大学独創的研究支援プロジェクト ライフイノベーション研究会  2014.03.06   和歌山大学産学連携・研究支援センター

  • 広帯域光源性能評価のための光干渉計(OCT) の立ち上げ

    柴田弘、西剛史、保田拓磨、尾崎信彦

    第24回光物性研究会 IIIB-102  2013.12.14  

  • フォトニック結晶導波路モードの低群速度波長でのパーセル効果を利用した量子ドット内キャリア緩和促進

    米田隼人、内田翔、尾崎信彦、小田久哉、池田直樹、杉本喜正、浅川潔

    第24回光物性研究会 IIIB-112  2013.12.14  

  • Time-Resolved Photoluminescence of InAs QDs Fabricated by In-Flush Technique

    M. Senshu, S. Kitamura, Y. Wen, K. Imai, T. Katsuyama, Y. Hino, N. Ozaki, Y. Sugimoto

    The 3rd International Symposium on Photonics and Electronics Convergence (ISPEC 2013) P-2  2013.11.19  

  • 自己組織化InAs量子ドットによる近赤外広帯域光源開発と光コヒーレンストモグラフィーへの応用

    尾崎 信彦  [Invited]

    第11回光科学若手研究会  2013.11.16  

  • Emission Wavelength Extension of Bi-layer InAs/GaAs-QDs by Controlling the Growth Rate of QD Layers

    Y. Nakatani, N. Ozaki, S. Ohkouchi, N. Ikeda, Y. Sugimoto, E. Clarke, R. Hogg

    12th Int. Conf. Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12) 7PN-27  2013.11.07  

  • 多波長量子ドット成長による超広帯域SLD光源開発と医療OCTへの応用

    尾崎 信彦  [Invited]

    第2回若手医師のためのハンズオンセミナー  2013.09.27  

  • Broadband near-infrared superluminescent diode based on stacked multi-color InAs/GaAs quantum dots

    Nobuhiko Ozaki, Takuma Yasuda, Shunsuke Ohkouchi, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto and Richard A. Hogg

    The 2013 International Conference on Solid State Devices and Materials (SSDM 2013) K-2-3  2013.09.25  

  • 近接二層積層によるGaAs基板上InAs-QDの発光長波長化の検討(III)

    中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正,Edmund Clarke,Richard Hogg

    第74回応用物理学会秋季学術講演会 19a-P8-3  2013.09.19   応用物理学会

  • In-flush法で作製した自己組織化InAs量子ドットの時間分解発光測定

    北村繁宏,温映輝,千秋政也,今井啓太,勝山俊夫,日野雄司,尾崎信彦,杉本喜正

    第74回応用物理学会秋季学術講演会 19p-P9-6  2013.09.19   応用物理学会

  • 多色InAs/GaAs量子ドットによる近赤外広帯域SLD光源の作製

    保田拓磨,尾崎信彦,大河内俊介,池田直樹,渡辺英一郎,杉本喜正,Richard Hogg

    第74回応用物理学会秋季学術講演会 19a-P8-4  2013.09.19   応用物理学会

  • 2光子励起によるInAs量子ドット埋め込みGaAsフォトニック結晶スラブ導波路型レーザー

    小田久哉,山中明生,尾崎信彦,池田直樹,杉本喜正

    第74回応用物理学会秋季学術講演会 18p-A3-18  2013.09.18   応用物理学会

  • Hydrogen generation from water by photochemical reaction with carbon

    Kousuke Maeda, Nobuhiko Ozaki and Ikuko Akimoto

    2013 JSAP-MRS Joint Symposia 16p-PM3-2  2013.09.16   JSAP, MRS

  • Photochemical activity of carbon powder in hydrogen generation from water

    Ikuko Akimoto, Kousuke Maeda, and Nobuhiko Ozaki

    Int. Conf. Diamond and Carbon Materials 2013 P1.012  2013.09.02  

  • 「生体の窓」領域におけるInAs/GaAs量子ドット発光波長制御技術~モノリシック多波長量子ドットによるOCT用光源のさらなる広帯域化に向けて~

    尾崎信彦

    第2回和歌山大学・徳島大学合同光・ナノテクノロジー研究会  2013.08.08  

  • Control of optical responses in InAs quantum dots by using the Purcell effect in a photonic crystal waveguide

    H. Yoneda, T. Umakoshi, N. Ozaki, H. Oda, N. Ikeda, Y. Sugimoto, K. Asakawa

    The 14th Chitose International Forum on Photonics Science & Technology (14th CIF) P-30  2013.07.08  

  • Wide-range control of emission wavelengths of InAs/GaAs QDs grown by MBE towards ultra-broadband NIR light source for biomedical imaging

    Nobuhiko Ozaki, Yuji Hino, Yohei Nakatani, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Edmund Clarke, Richard A. Hogg  [Invited]

    Collaborative Conference on Crystal Growth (3CG) 2013 A2  2013.06.10   OAHOST

  • Growth of stacked In-flushed-QD layers emitting at 1um with Gaussian-like broadband spectrum

    Nobuhiko Ozaki, Yuji Hino, Shunsuke Ohkouchi, Naoki Ikeda, and Yoshimasa Sugimoto

    The 40th International Symposium on Compound Semiconductors (ISCS 2013) MoPC-01-01  2013.05.20  

  • Enhancement upconversion luminescence in InAs-quantum dots embedded GaAs photonic-crystal slab line-defect waveguide

    H. Oda, A. Yamanaka, N. Ozaki, N. Ikeda, Y. Sugimoto

    2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference (CLEO EUROPE/IQEC 2013) CK-P.23  2013.05.13   IEEE

  • 近接二層積層によるGaAs基板上InAs-QDの発光長波長化の検討(II)

    中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正,Edmund Clarke,Richard Hogg

    第60回応用物理学春季学術講演会 29a-PB7-2  2013.03.29   応用物理学会

  • フォトニック結晶導波路モードにおけるパーセル効果を利用したInAs量子ドットの光学特性制御

    米田隼人, 馬越隆之, 尾崎信彦, 小田久哉, 池田直樹, 杉本喜正, 浅川潔

    第60回応用物理学春季学術講演会 29a-PB7-2  2013.03.29  

  • 発光波長制御されたIn-flushed-QDの積層成長による1ミクロン帯広帯域発光

    日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正

    第60回応用物理学春季学術講演会 28p-G20-8  2013.03.28   応用物理学会

  • GaAsフォトニック結晶導波路のアップコンバージョン特性(2)

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第60回応用物理学春季学術講演会 28a-C1-3  2013.03.28  

  • 2光子吸収を利用したGaAsフォトニック結晶導波路によるアップコンバージョン光の発生

    小田久哉、山中明生、尾崎信彦、池田直樹、杉本喜正

    電子情報通信学会LQE研究会 LQE2012-160  2013.01.25  

  • 2光子吸収を利用したGaAsフォトニック結晶導波路によるアップコンバージョン光の発生

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第48回応用物理学会北海道支部・第9回日本光学会北海道地区合同学術講演会  2013.01.11  

  • レーザー照射による備長炭粉末を用いた水からの水素発生

    前田宏輔、尾崎信彦、秋元郁子

    励起ナノプロセス研究会第8回研究会 P-5  2012.12.17  

  • Monolithic growth of multi-color InAs-QD ensembles for broadband and spectrum-shape-controllable near-infrared light source

    Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa, Richard A. Hogg  [Invited]

    2012 Collaborative Conference on Crystal Growth (3CG 2012) A14  2012.12.11  

  • 1ミクロン帯発光広帯域光源を目指したIn-flush法によるInAs量子ドットの作製と光学評価

    日野雄司, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正

    第23回光物性研究会 IIIA-82  2012.12.08  

  • フォトニックバンドエンジニアリングによるフォトニック結晶導波路内量子ドットの光学特性制御

    米田隼人, 尾崎信彦, 小田久哉, 池田直樹, 杉本喜正, 浅川潔

    第23回光物性研究会 IIIA-76  2012.12.08  

  • Inフラッシュ法を用いた1ミクロン帯広帯域発光InAs量子ドットの作製と医療イメージングへの応用検討

    日野雄司, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正

    電子情報通信学会LQE研究会 LQE2012-117  2012.11.30  

  • 医療・生体イメージング光源に向けた1ミクロン帯広帯域発光InAs量子ドットの作製

    日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正

    日本材料学会 半導体エレクトロニクス部門 平成24年度第1回研究会 C01  2012.09.29   日本材料学会

  • Controlling emission wavelength of InAs quantum dots using the In-flush technique for broadband 1.05-um light source

    Y. Hino, N. Ozaki, S. Ohkouchi, N. Ikeda, Y. Sugimoto

    The 17th Int. Conf. Molecular Beam Epitaxy (MBE2012) ThP-59  2012.09.27  

  • Expanding emission wavelength of self-assembled InAs quantum dots beyond 1.3-um by using the QD bi-layer for broadband light source

    N. Ozaki, Y. Nakatani, S. Ohkouchi, N. Ikeda, Y. Sugimoto, R. Hogg

    The 17th Int. Conf. Molecular Beam Epitaxy (MBE2012) TuA-3-7  2012.09.25  

  • Broad-band optical wavelength conversion by four-wave mixing in W3 type AlGaAs photonic-crystal waveguide

    H. Oda, A. Yamanaka, N. Ozaki, N. Ikeda and Y. Sugimoto

    International Union of Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012) B-9-P24-012  2012.09.24   MRS-J

  • GaAsフォトニック結晶導波路のアップコンバージョン特性

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第73回応用物理学会学術講演会 13a-PA5-18  2012.09.13  

  • コロイダルPbS量子ドットの時間分解発光測定

    千秋政也, 今井啓太, 中洞敏業, 長尾祐希, 勝山俊夫, 尾崎信彦, 杉本喜正

    第73回応用物理学会学術講演会 13p-C5-18  2012.09.13  

  • In‐flush法による1ミクロン帯発光InAs‐QDの発光強度改善

    日野雄司, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正

    第73回応用物理学会学術講演会 12p-PB11-8  2012.09.12  

  • GaAs/AlGaAs多重量子井戸におけるフェムト秒レーザーアブレーション

    富田卓朗, 尾崎信彦, 菅野智士, 江山剛史, 高吉翔大, 森田健, 井須俊郎

    第73回応用物理学会学術講演会 12p-PA4-6  2012.09.12  

  • 可視光パルスレーザーを用いた備長炭粉末による水の光分解

    前田宏輔, 尾崎信彦, 秋元郁子

    第73回応用物理学会学術講演会 12p-PB5-4  2012.09.12  

  • 多波長InAs 量子ドット成長による近赤外広帯域光源開発

    尾崎信彦

    光・ナノテクノロジー研究会  2012.08.09  

  • Formation of Nano-particles of Organic Molecules by Liquid Laser Ablation

    Ikuko Akimoto, Masahiro Ohata, Nobuhiko Ozaki and Gu Ping

    2012 MRS Spring Meeting, II8.4  2012.04.11  

  • Modification of Optical Nonlinear Response in Quantum Dots Embedded in a Photonic Crystal Waveguide via Photonic Band Engineering

    Nobuhiko Ozaki, Hisaya Oda, Naoki Ikeda, Yoshimasa Sugimoto, Yoshinori Watanabe, Kiyoshi Asakawa

    2012 MRS Spring Meeting, M3.2  2012.04.10  

  • 多色量子ドット並列構造による近赤外広帯域光源のスペクトル成形

    竹内晃一, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正, 小田久哉, 浅川潔, HOGG R.A

    第59回応用物理学関係連合講演会 17p-F4-13  2012.03.17  

  • 医療・生体イメージング光源に向けた1ミクロン帯発光InAs‐QD作製

    日野雄司, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正

    第59回応用物理学関係連合講演会 17p-DP3-15  2012.03.17  

  • 近接二層積層によるGaAs基板上InAs‐QDの発光長波長化の検討

    中谷擁平, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正

    第59回応用物理学関係連合講演会 16p-A8-15  2012.03.16  

  • AlGaAsフォトニック結晶スラブ線欠陥導波路における4光波混合の波長依存性(2)

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第59回応用物理学関係連合講演会 15p-E5-13  2012.03.15  

  • 多波長量子ドットによる近赤外広帯域光源開発とOCTへの応用

    尾崎 信彦  [Invited]

    第23回GRL浜松セミナー~若手研究者のための光・電子・情報科学に関する情報交換~  2012.01.25  

  • 半導体ナノ構造を用いた光学応用

    尾崎 信彦

    化学技術者協会 60周年記念技術情報交換会  2012.01.20   和歌山県化学技術者協会

  • AlGaAsフォトニック結晶スラブ線欠陥導波路における非線形位相シフトを利用した変換限界パルスの制御

    小田久哉, 夛田量宏, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第47回応用物理学会北海道支部・第8回日本光学会北海道地区合同学術講演会  2012.01.06  

  • 近赤外広帯域光源に向けた多波長量子ドット

    尾崎 信彦

    わかやまテクノ・ビジネスフェア'11 わかやま発技術シーズ発表会  2011.12.07   公益財団法人わかやま産業振興財団・和歌山県・社団法人和歌山情報サービス産業協会

  • OCT光源素子応用を目指した半導体ナノ構造作製

    尾崎 信彦

    第1回和歌山医工学研究会  2011.12.05   和歌山大学、和歌山県立医科大学

  • Role of non-radiative relaxation process in formation of organic nano-particles by liquid laser ablation

    Ikuko Akimoto, Masahiro Ohata, Nobuhiko Ozaki and Gu Ping

    The 11th Tamura Memorial Symposium ~ Frontiers in Nanoscience ~  2011.12.03  

  • pH 調整した溶液中でのレーザーアブレーション法による有機ナノ粒子作製

    大畠正裕、ABDUL HALIM BIN MAMAT NAWI、尾崎信彦、秋元郁子、顧 萍

    励起ナノプロセス研究会 第7回研究会 P-12  2011.11.01   応用物理学会励起ナノプロセス研究会

  • Selective-area growth of 4-color InAs-QD ensembles for broadband light source

    K. Takeuchi, N. Ozaki, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, R. A. Hogg

    2011 International Conference on Solid State Devices and Materials (SSDM 2011) P-8-1  2011.09.29  

  • 多波長量子ドットによるOCT用近赤外広帯域光源の開発

    尾崎信彦

    イノベーション・ジャパン2011 大学見本市 新技術説明会 PM-11  2011.09.21   JST

  • GaAsフォトニック結晶線欠陥導波路(W1型)を利用したInAs量子ドットレーザーの観測

    浜田直樹, 小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第72回応用物理学会学術講演会 1a-ZR-4  2011.09.01  

  • フォトニック結晶スラブ線欠陥導波路を用いた変換限界パルスの制御

    小田久哉, 夛田量宏, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第72回応用物理学会学術講演会 1p-ZR-4  2011.09.01  

  • 90度回転メタルマスク法により作製した広帯域光源用4色量子ドットの光学評価

    竹内晃一, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正, 浅川潔, HOGG R.A

    第72回応用物理学会学術講演会 1a-ZA-14  2011.09.01  

  • フォトニック結晶導波路に埋込んだ量子ドットにおけるキャリア緩和促進の検討

    尾崎信彦, 宗石達矢, 小田久哉, 池田直樹, 渡辺慶規, 杉本喜正, 浅川潔

    第72回応用物理学会学術講演会 31p-ZR-12  2011.08.31  

  • InAs quantum-dots laser utilizing GaAs W1 type photonic-crystal slab line-defect waveguide

    H. Oda, N. Hamada, A. Yamanaka, N. Ozaki, N. Ikeda, Y. Sugimoto

    2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC) CB.P.4 THU  2011.05.26  

  • Site-control of In(Ga)As Quantum Dots using Patterned Substrates, Nano-Jet Probe, and Metal Mask

    Y. Nakamura, S. Ohkouchi, N. Ozaki, N. Ikeda, Y. Sugimoto, K. Asakawa  [Invited]

    The 2011 Villa Conference on Interaction Among Nanostructures (VCIAN-2011)  2011.04.22  

  • AlGaAsフォトニック結晶スラブ線欠陥導波路におけるパルス圧縮

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第58回応用物理学関係連合講演会 26p-KA-1  2011.03.26  

  • 溶液レーザーアブレーション法で作製した有機ナノ粒子水溶液の吸収スペクトルと粒子径の相関

    大畠正裕, 尾崎信彦, 秋元郁子

    第58回応用物理学関係連合講演会 25a-CD-9  2011.03.25  

  • スペクトル形状制御可能な広帯域光源を目指した多色量子ドット成長(II)~90度回転メタルマスクによる4色量子ドットのモノリシック成長~

    竹内晃一, 尾崎信彦, 大河内俊介, 池田直樹, 杉本喜正, 浅川潔, HOGG R. A

    第58回応用物理学関係連合講演会 24p-BQ-6  2011.03.24  

  • 2次元フォトニック結晶スラブ線欠陥導波路を用いたInAs量子ドットレーザーに関する研究

    浜田直樹, 小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第46回応用物理学会北海道支部・第7回日本光学会北海道地区合同学術講演会 A-30  2011.01.08  

  • AlGaAsフォトニック結晶スラブ線欠陥導波路における4光波混合による波長変換効率の波長依存性

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正

    第46回応用物理学会北海道支部・第7回日本光学会北海道地区合同学術講演会 A-29  2011.01.08  

  • 溶液レーザーアブレーション法によるキナクリドンキノンのナノ粒子作製

    大畠正裕、尾崎信彦、秋元郁子

    第21回光物性研究会 IIIB-106  2010.12.11  

  • スペクトル形状制御可能な広帯域光源を目指した多色量子ドット成長

    竹内晃一、尾崎信彦、日野雄司、池田直樹、杉本喜正、浅川潔、Richard A. Hogg

    第21回光物性研究会 IIIB-105  2010.12.11  

  • フォトニック結晶導波路に埋込んだ量子ドットにおける光励起とキャリア緩和過程制御

    尾崎信彦,宗石達矢,北川嘉則,池田直樹, 杉本喜正, 浅川 潔

    励起ナノプロセス研究会第六回研究会 P-8  2010.11.02   応用物理学会励起ナノプロセス研究会

  • 溶液レーザーアブレーション法による有機ナノ粒子作製

    大畠正裕,尾崎信彦,秋元郁子

    励起ナノプロセス研究会第六回研究会 P-9  2010.11.02   応用物理学会励起ナノプロセス研究会

  • 医療・生体イメージング応用を目指した半導体ナノ構造による近赤外広帯域光源の開発

    尾崎 信彦  [Invited]

    新無機膜研究会第62回研究会  2010.09.22  

  • スペクトル形状制御可能な広帯域光源を目指した多色量子ドット成長

    尾崎信彦, 竹内晃一, 大河内俊介, 池田直樹, 杉本喜正, 浅川潔, HOGG R.A

    第71回 応用物理学会学術講演会 15a-ZV-3  2010.09.15  

  • AlGaAsフォトニック結晶スラブ線欠陥導波路における4光波混合の波長依存性

    小田久哉, 山中明生, 尾崎信彦, 池田直樹, 杉本喜正, 浅川潔

    第71回応用物理学会学術講演会 15p-ZW-15  2010.09.15  

  • Evolution of nanophotonics from semiconductor photonic crystal device to metal/semiconductor plasmonic device

    K. Asakawa, Y. Sugimoto, Y. Watanabe, N. Ikeda, N. Ozaki, D. Kumar V, T. Nomura, D. Inoue, A. Miura, H. Fujikawa, K. Sato  [Invited]

    5th International Conference on Advanced Optoelectronics and Lasers (CAOL' 2010)  2010.09  

  • Multi-color quantum dots grown in selective-areas for broadband light source

    N. Ozaki, K. Takeuchi, S. Ohkouchi, N. Ikeda, Y. Sugimoto, R. A. Hogg

    16th International Conference on Molecular Beam Epitaxy (MBE2010) Wed A3.4  2010.08.25  

  • Wideband operation of 2D photonic crystal directional coupler with topology optimized waveguide bends

    Y. Watanabe, N. Ikeda, Y. Takata, Y. Kitagawa, N. Ozaki, Y. Sugimoto, and K. Asakawa

    OSA Int. Conf. Nanophotonics 2010 P-B39  2010.06.01  

  • Fabrication and characterization of an all-optical flip-flop based on photonic crystal waveguides and two-color quantum dots

    N. Ozaki, Y. Takata, Y. Kitagawa, N. Ikeda, S. Nakamura, S. Ohkouchi, A. Watanabe, Y. Watanabe, Y. Sugimoto and K. Asakawa

    OSA Int. Conf. Nanophotonics 2010 P-B40  2010.06.01   OSA

  • 溶液レーザーアブレ‐ション法による有機ナノ微粒子作製とOLEDへの応用

    大畠正裕, 尾崎信彦, 秋元郁子

    第57回応用物理学関係連合講演会 19p-ZE-10  2010.03.19  

  • Site-Controlled InAs Quantum Dots Fabricated by the Nano-Jet Probe Method

    Shunsuke Ohkouchi, Nobuhiko Ozaki, Yoshimasa Sugimoto and Kiyoshi Asakawa  [Invited]

    2nd Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2009)  2009.08.13  

  • Monolithic Selective-area Growth of Two-Color InAs QDs with a Rotational Metal Mask for Integrated Optical Devices

    Nobuhiko Ozaki, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, and Kiyoshi Asakawa  [Invited]

    2nd Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2009)  2009.08.11  

  • 1.3-um帯バルク型半導体光導波路における光位相・光強度変調量の波長依存性

    本間正徳、フェラン サレラス、グウェン トゥアン アン、上野芳康、尾崎信彦、浅川潔

    電子情報通信学会LQE研究会 LQE2009-7  2009.05.22  

  • フォトニック結晶/量子ドット融合型全光スイッチの高速繰り返し動作

    尾崎信彦, 北川嘉則, 高田賀章, 池田直樹, 杉本喜正, 渡辺慶規, 浅川潔

    第56回応用物理学関係連合講演会 1p-B-17  2009.04.01  

  • メタルマスク法による選択領域量子ドット成長時のマスク放射熱の影響

    尾崎信彦, 大河内俊介, 杉本喜正, 池田直樹, 渡辺慶規, 浅川潔

    第56回応用物理学関係連合講演会 1a-J-12  2009.04.01  

  • フォトニック結晶と量子ドットを用いた超高速全光素子の開発

    尾崎信彦、渡辺慶規、池田直樹、杉本喜正、浅川潔

    先端研究施設共用イノベーション創出事業つくば4機関連携ワークショップイノベーションつくば2008-創る技術と観る・測る技術の融合-  2008.12.02  

  • Photonic-Crystal and Quantum-Dot Technologies for Ultra-Small and Ultra-Fast All-Optical Flip-Flop

    N. Ozaki, N. Ikeda, Y. Watanabe, Y. Takata, Y. Kitagawa, S. Ohkouchi, S. Nakamura, A. Watanabe, A. Mizutani, Y. Sugimoto and K. Asakawa  [Invited]

    214th ECS (The Electrochemical Society) Meeting  2008.10.14  

  • 2次元横方向ブレーズ格子によるフォトニック結晶導波路への垂直入出力結合偏光依存性

    水谷彰夫, 菊田久雄, 池田直樹, 尾崎信彦, 渡辺慶規, 杉本喜正, 浅川潔

    第69回応用物理学会学術講演会 2a-V-8  2008.09.02  

  • 2次元フォトニック結晶導波路への光入射構造のトポロジー最適化

    渡辺慶規, 海津泰宏, 池田直樹, 水谷彰夫, 尾崎信彦, 杉本喜正, 浅川潔

    第69回応用物理学会学術講演会 2a-V-9  2008.09.02  

  • 複数波長を有する選択領域成長量子ドットによる光学集積素子作製

    尾崎信彦, 高田賀章, 大河内俊介, 池田直樹, 渡辺慶規, 杉本喜正, 浅川潔

    第69回応用物理学会学術講演会 2a-CF-23  2008.09.02  

  • ナノジェットプローブ法によるIn(Ga)As位置制御量子ドットの作製

    大河内俊介, 尾崎信彦, 杉本喜正, 石川浩, 浅川潔

    第69回応用物理学会学術講演会 2a-CF-1  2008.09.02  

  • Two-color InAs-QDs selective-area-growth for all-optical digital flip-flop device

    N. Ozaki, Y. Takata, S. Ohkouchi, N. Ikeda, Y. Watanabe, Y. Sugimoto, and K. Asakawa

    15th International Conference on Molecular Beam Epitaxy (MBE-2008) THA1.3  2008.08.07  

  • Site-Controlled In(Ga)As Quantum Dots Fabricated by the Nano-Jet Probe Method

    S. Ohkouchi, N. Ozaki, Y. Sugimoto, H. Ishikawa, and K. Asakawa

    15th International Conference on Molecular Beam Epitaxy (MBE-2008) THP10  2008.08.07  

  • Design and fabrication of nano-photonics-based all-optical flip-flop switch

    Asakawa K, Nakamura S, Watanabe A, Ikeda N, Watanabe Y, Ozaki N, Ohkouchi S, Sugimoto Y

    2008 International Conference on Photonics in Switching (PS 2008) D-04-3  2008.08  

  • 極微細加工技術が支える集積・超高速光信号処理ナノフォトニクス

    杉本喜正, 池田直樹, 尾崎信彦, 渡辺慶規, 浅川潔  [Invited]

    応用物理学会応用電子物性分科会研究例会“ナノ加工テクノロジーの展望”  2008.07.04  

  • ナノフォトニクスの新展開~集積・超高速論理素子と量子情報応用~

    杉本喜正, 尾崎信彦, 渡辺慶規, 池田直樹, 大河内俊介, 黒田隆, 間野高明, 落合哲行, 黒田圭司, 迫田和彰, 浅川潔  [Invited]

    応用物理学会分科会・日本光学会・ナノオプティクス研究グループ主催第17回研究討論会、第6回プラズモニクスシンポジウム(共同開催)  2008.06.27  

  • フォトニック結晶方向性結合器および波長選択性Y分岐導波路のトポロジー最適化

    渡辺慶規, 池田直樹, 高田賀章, 北川嘉則, 尾崎信彦, 杉本喜正, 浅川潔

    第55回応用物理学関係連合講演会 27p-ZX-13  2008.03.27  

  • 波長選択性を有するフォトニック結晶Y分岐導波路のトポロジー最適化

    渡辺慶規, 池田直樹, 高田賀章, 北川嘉則, 尾崎信彦, 杉本喜正, 浅川潔

    電子情報通信学会2008総合大会 C-3-100  2008.03.21  

  • Optical flip-flop based on coupled ultra-small Mach-Zehnder all-optical switches

    S. Nakamura, A. Watanabe, X. Wang, N. Ikeda, Y. Sugimoto, N. Ozaki, Y. Watanabe, and K. Asakawa

    OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference OThM2  2008.02.28  

  • Repetitive phase shifts of signal pulses induced by optical non-linearity in a photonic crystal waveguide with quantum dots

    N. Ozaki, Y. Kitagawa, Y. Takata, N. Ikeda, S. Ohkouchi, Y. Watanabe, A. Mizutani, Y. Sugimoto, and K. Asakawa

    Photonics West 2008 6901-04  2008.01.21  

  • Selective growth of stacked InAs quantum dots by using the templates formed by the Nano-Jet Probe

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, and K. Asakawa

    9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9) 13Ca-5  2007.11.13  

  • Selective-area-growth of InAs-QDs with different absorption wavelengths via developed metal mask/MBE method for integrated optical devices

    Y. Takata, N. Ozaki, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani, and K. Asakawa

    9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9) 12Ca-5  2007.11.12  

  • フォトニック結晶と量子ドット融合による全光フリップフロップ素子(PC-FF)

    尾崎信彦, 高田賀章, 北川嘉則, 池田直樹, 大河内俊介, 渡辺慶規, 杉本喜正, 浅川潔  [Invited]

    徳島大学フロンティア研究センター講演会  2007.11.01  

  • Optical flip-flop device composed of photonic crystal waveguides and quantum dots

    Y. Sugimoto, Y. Watanabe, N. Ozaki, A. Mizutani, Y. Takata, Y. Kitagawa, N. Ikeda, S. Ohkouchi, S. Nakamura, A. Watanabe, and K. Asakawa

    The 13th Microoptics Conference (MOC'07) L5  2007.10.31  

  • Measurements of Optical Non-linearity Induced Phase Shifts of a Signal Pulse with Repetitive Control Pulses in Photonic Crystal/Quantum Dot Waveguide

    Y. Kitagawa, N. Ozaki, Y. Takata, N. Ikeda, Y. Watanabe, A. Mizutani, Y. Sugimoto, and K. Asakawa

    The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2007) WDD4  2007.10.24  

  • Monolithic Growth of InAs-QDs with Different Emission Wavelengths in Different Areas for Integrated Optical Devices

    Y. Takata, N. Ozaki, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani, and K. Asakawa

    The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2007) MD4  2007.10.22  

  • In situ Metal Mask for Selective Area Growth of Thin Epitaxial Layers

    S. Ohkouchi, N. Ozaki, Y. Takata, Y. Kitagawa, Y. Nakamura, N. Ikeda, Y. Sugimoto, and K. Asakawa

    2007 International Conference on Solid State Devices and Materials (SSDM2007) F-1-3  2007.09.19  

  • Optical-Nonlinearity-Induced Phase Shift via Selective Area Growth InAs-QDs in a Photonic Crystal Waveguide

    Y. Kitagawa, N. Ozaki, Y. Takata, N. Ikeda, S. Ohkouchi, Y. Sugimoto, and K. Asakawa

    2007 International Conference on Solid State Devices and Materials (SSDM2007) E-2-2  2007.09.19  

  • トポロジー最適設計曲がり導波路を用いたフォトニック結晶方向性結合器の広帯域動作

    渡辺慶規, 池田直樹, 高田賀章, 北川嘉則, 水谷彰夫, 尾崎信彦, 杉本喜正, 浅川潔

    電子情報通信学会2007ソサイエティ大会 C-3-22  2007.09.12  

  • フォトニック結晶導波路内量子ドットにおける繰返し制御光による信号光の位相変調

    北川嘉則, 尾崎信彦, 高田賀章, 池田直樹, 渡辺慶規, 水谷彰夫, 杉本喜正, 浅川潔

    第68回応用物理学会学術講演会 8p-ZS-8  2007.09.08  

  • 選択領域に量子ドットを埋め込んだフォトニック結晶波路での光非線形効果による位相変調

    尾崎信彦, 北川嘉則, 高田賀章, 池田直樹, 渡辺慶規, 水谷彰夫, 大河内俊介, 杉本喜正, 浅川潔

    第68回応用物理学会学術講演会 8p-ZS-7  2007.09.08  

  • 交差型およびZ型フォトニック結晶スラブ導波路のトポロジー最適化:作製と評価

    渡辺慶規, 池田直樹, 高田賀章, 北川嘉則, 水谷彰夫, 尾崎信彦, 杉本喜正, 浅川潔

    第68回応用物理学会学術講演会 8p-ZS-3  2007.09.08  

  • 横方向ブレーズ格子によるフォトニック結晶導波路への垂直入出力結合

    水谷彰夫, 池田直樹, 尾崎信彦, 高田賀章, 北川嘉則, 渡辺慶規, 杉本喜正, 浅川潔

    第68回応用物理学会学術講演会 6p-P11-2  2007.09.06  

  • AlGaAsフォトニック結晶スラブ導波路における光カー効果による非線形屈折率の群速度依存性

    小田久哉, 三神康紘, 井上久遠, 池田直樹, 河島整, 石川浩, 北川嘉則, 尾崎信彦, 杉本喜正, 浅川潔

    第68回応用物理学会学術講演会 6p-P9-3  2007.09.06  

  • メタルマスク(MM)法によるInAs量子ドットの選択領域成長(III)~異なる場所に異なる吸収成長をもつQDの作製~

    高田賀章, 尾崎信彦, 大河内俊介, 杉本喜正, 池田直樹, 北川嘉則, 渡辺慶規, 水谷彰夫, 浅川潔

    第68回応用物理学会学術講演会 6p-E-16  2007.09.06  

  • ナノジェットプローブ法により形成したInAs位置制御積層量子ドットからのPL発光

    大河内俊介, 杉本喜正, 尾崎信彦, 石川浩, 浅川潔

    第68回応用物理学会学術講演会 6p-E-12  2007.09.06  

  • 極微小マッハツェンダ光回路に基づく光フリップフロップの実現に向けた双安定性の実証

    中村滋, 渡邊晃, WANG X, 池田直樹, 杉本喜正, 尾崎信彦, 渡辺慶規, 浅川潔

    第68回応用物理学会学術講演会 4p-P3-28  2007.09.04  

  • Criterion for Removing a Delayed Peak from the Ultrafast Nonlinear Response of Photonic Crystal / Quantum Dot Waveguides

    Ferran Salleras, Masanori Honma, Jun Sakaguchi, Yoshiyasu Ueno, Nobuhiko Ozaki, Yoshinori Kitagawa, Kiyoshi Asakawa, Naoki Ikeda, Yoshimasa Sugimoto

    OSA Topical Meeting on Nonlinear Photonics(NP) 2007, NTuC6  2007.09.04  

  • Molecular beam epitaxial growth of site-controlled InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, and K. Asakawa

    The 13th International Conference on Modulated Semiconductor structures (MSS-13)  2007.07  

  • Selective formation of high density InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, and K. Asakawa

    The 19th International Conference on Indium Phosphide and Related Materials (IPRM 07) ThA1-5  2007.05.17  

  • InAs quantum dots grown on selective areas with a metal mask method for photonic-crystal-based ultra-small and ultra-fast all optical devices

    N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani and K. Asakawa

    The 19th International Conference on Indium Phosphide and Related Materials (IPRM 07) ThB1-7  2007.05.17  

  • Topology Optimization for Photonic Crystal Waveguide Bends with Wide and Flat Bandwidths in Air-Bridge type Photonic Crystal Slabs

    Y. Watanabe, N. Ikeda, Y. Sugimoto, Y. Takata, Y. Kitagawa, A. Mizutani, N. Ozaki, and K. Asakawa

    CONFERENCE ON LASERS AND ELECTRO-OPTICS QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007) CWN7  2007.05.09  

  • Optical nonlinearity-induced phase shift in quantum dots-embedded photonic crystal waveguide measured by pump/probe analysis

    N. Ozaki, Y. Kitagawa, Y. Takata, N. Ikeda, Y. Watanabe, A. Mizutani, Y. Sugimoto, and K. Asakawa

    PECS-VII, International Symposium on Photonic and Electromagnetic Crystal Structures B-30  2007.04.10  

  • Two-dimensional rhombic-lattice grating coupler for oblique incidence in the integrated photonic crystal waveguide slab

    A. Mizutani, N. Ikeda, Y. Watanabe, N. Ozaki, Y. Takata, Y. Kitagawa, F. Van Laere, D. Taillaert, R. Baets, Y. Sugimoto, and K. Asakawa

    PECS-VII, International Symposium on Photonic and Electromagnetic Crystal Structures B-17  2007.04.10  

  • Topology optimization of asymmetric Y-junction for air-bride type photonic crystal slab waveguides

    Y. Watanabe, N. Ikeda, Y. Sugimoto, Y. Takata, Y. Kitagawa, A. Mizutani, N. Ozaki, and K. Asakawa

    PECS-VII, International Symposium on Photonic and Electromagnetic Crystal Structures B-65  2007.04.10  

  • Selective-area-growth of InAs-QDs for PC-based all optical devices

    Y. Takata, N. Ozaki, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani, and K. Asakawa

    PECS-VII, International Symposium on Photonic and Electromagnetic Crystal Structures B-54  2007.04.10  

  • High-transmission recovery in slow-light-range in photonic crystal waveguide using hetero group-velocity waveguide

    Y. Kitagawa, N. Ozaki, Y. Takata, N. Ikeda, Y. Watanabe, A. Mizutani, Y. Sugimoto, and K. Asakawa

    PECS-VII, International Symposium on Photonic and Electromagnetic Crystal Structures Tu-4  2007.04.09  

  • GaAs photonic crystal/InAs quantum dot-based all-optical flip-flop : PC-FF

    K. Asakawa, Y. Sugimoto, Y. Watanabe, N. Ozaki, A. Mizutani, Y. Takata, Y. Kitagawa, N. Ikeda, X. Wang, A. Watanabe, S. Nakamura and S. Ohkouchi

    PECS-VII, International Symposium on Photonic and Electromagnetic Crystal Structures A-4  2007.04.09  

  • 群速度分散を抑制したヘテロ群速度フォトニック結晶導波路の検討

    北川嘉則, 尾崎信彦, 渡辺慶規, 高田賀章, 池田直樹, 水谷彰夫, 杉本喜正, 浅川潔

    第54回応用物理学関係連合講演会 29p-ZB-13  2007.03.29  

  • AlGaAsフォトニック結晶スラブ線欠陥導波路による自己位相変調の観測

    小田久哉, 井上久遠, 田中有, 池田直樹, 杉本喜正, 石川浩, 北川嘉則, 尾崎信彦, 浅川潔

    第54回応用物理学関係連合講演会 29p-ZB-3  2007.03.29  

  • フォトニック結晶導波路埋め込み量子ドットの光非線形性による位相変調の測定

    尾崎信彦, 北川嘉則, 高田賀章, 池田直樹, 渡辺慶規, 水谷彰夫, 杉本喜正, 浅川潔

    第54回応用物理学関係連合講演会 29p-ZB-4  2007.03.29  

  • メタルマスク(MM)法によるInAs量子ドットの選択領域成長(II)~埋め込み層の段差低減~

    高田賀章, 尾崎信彦, 大河内俊介, 杉本喜正, 池田直樹, 北川嘉則, 渡辺慶規, 水谷彰夫, 浅川潔

    第54回応用物理学関係連合講演会 28p-Q-4  2007.03.28  

  • ナノジェットプローブ法におけるInナノドットのInAs結晶化過程

    大河内俊介, 杉本喜正, 尾崎信彦, 石川浩, 浅川潔

    第54回応用物理学関係連合講演会 28p-Q-2  2007.03.28  

  • フォトニック結晶非対称Y分岐導波路のトポロジー最適設計

    渡辺慶規, 池田直樹, 杉本喜正, 高田賀章, 北川嘉則, 水谷彰夫, 尾崎信彦, 浅川潔

    第54回応用物理学関係連合講演会 28a-ZB-3  2007.03.28  

  • 2次元菱形配列格子によるフォトニック結晶導波路への斜入射入出力結合

    水谷彰夫, 尾崎信彦, 高田賀章, 池田直樹, 渡辺慶規, LAERE F. V, BAETS R, 杉本喜正, 浅川潔

    第54回応用物理学関係連合講演会 28a-ZB-6  2007.03.28  

  • トポロジー最適化法によるフォトニック結晶Y分岐導波路の設計

    渡辺慶規, 池田直樹, 杉本喜正, 高田賀章, 北川嘉則, 水谷彰夫, 尾崎信彦, 浅川潔

    電子情報通信学会2007年総合大会 C-3-48  2007.03.22  

  • Mechanism of electric field induced deposition of In nano-dots with the Nano-Jet Probe

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, and K. Asakawa

    14th International Colloquium on Scanning Probe Microscopy (ICSPM14), S4-63p  2006.12.07  

  • Selective-area growth of self-assembled InAs-QDs by metal mask method for optical integrated circuit applications

    N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani and K. Asakawa

    2006 MRS Fall Meeting M17.3  2006.11.30  

  • Topology Optimization for Photonic Crystal Waveguide with Wide and Flat Bandwidths in Ultra-Fast All-Optical Switch (PC-SMZ)

    Y. Watanabe, Y. Sugimoto, N. Ikeda, N. Ozaki, A. Mizutani, Y. Takata, Y. Kitagawa, J. S. Jensen, O. Sigmund, P. I. Borel, M. Kristensen, and K. Asakawa

    The 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2006) ThG4  2006.11.02  

  • Planar focusing lens grating for vertical coupling on 2D photonic crystal slab waveguide

    A. Mizutani, N. Ikeda, Y. Watanabe, N. Ozaki, Y. Takata, Y. Kitagawa, F. Laere, R. Baets, Y. Sugimoto, and K. Asakawa

    The 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2006) ThO5  2006.11.02  

  • Photonic crystals and quantum dots: Towards integrated optics for advanced ultra-fast all-optical signal processing

    K. Asakawa, Y. Sugimoto, Y. Watanabe, N. Ikeda, N. Ozaki, A. Mizutani, Y. Takata, Y. Kitagawa, S. Ohkouchi, S. Nakamura, X. Wang, A. Watanabe, R. Baets, O. Sigmund, P. I. Borel and M. Kristensen  [Invited]

    The 32nd European Conference on Optical Communication, (ECOC 2006) We 1.2.1  2006.09.27  

  • Topology optimization for photonic crystal waveguide intersection with wide and flat bandwidths in ultra-fast all-optical switch (pc-smz)

    Y. Sugimoto, Y. Watanabe, N. Ikeda, N. Ozaki, A. Mizutani, Y. Takata, J. S. Jensen, O. Sigmund, P. I. Borel, M. Kristensen, H. Ishikawa and K. Asakawa

    The 32nd European Conference on Optical Communication, (ECOC 2006) We 1.2.5  2006.09.27  

  • トポロジー最適設計によるフォトニック結晶交差導波路および60°曲がり導波路の広帯域化

    渡辺慶規, 杉本喜正, 池田直樹, 尾崎信彦, 水谷彰夫, 高田賀章, 北川嘉則, JENSEN J.S, SIGMUND O, BOREL P.I, KRISTENSEN M, 浅川潔

    2006電子情報通信学会ソサイエティ大会 C-4-2  2006.09.21  

  • 極微小対称マッハツェンダ型全光スイッチを用いた光フリップフロップ

    中村滋, 渡邊晃, WANG X, 杉本喜正, 渡辺慶規, 尾崎信彦, 水谷彰夫, 浅川潔

    2006電子情報通信学会ソサイエティ大会 CS-11-7  2006.09.21  

  • Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devices

    Y. Takata, N. Ozaki, S. Ohkouchi, Y. Sugimoto, Y. Nakamura, N. Ikeda, and K. Asakawa

    14th International Conference on Molecular Beam Epitaxy (MBE-2006) WeP-35  2006.09.06  

  • Selective growth of InAs quantum dots using In nano-dot arrays formed by Nano-Jet Probe method

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, and K. Asakawa

    14th International Conference on Molecular Beam Epitaxy (MBE-2006) MoP-54  2006.09.04  

  • 超小型全光機能素子を目指した,異なる場所に異なる吸収波長を持つInAs量子ドットの作製

    尾崎信彦, 高田賀章, 大河内俊介, 北川嘉則, 池田直樹, 杉本喜正, 浅川潔

    第67回応用物理学会学術講演会 1a-ZX-4  2006.09.01  

  • 超小型・フォトニック結晶全光スイッチ(PC‐SMZ)を用いた光フリップ・フロップ素子の提案

    浅川潔, 渡邊晃, WANG X, 杉本喜正, 渡辺慶規, 尾崎信彦, 水谷彰夫

    第67回応用物理学会学術講演会 1a-ZX-3  2006.09.01  

  • ナノジェットプローブ法により形成したInAs量子ドットの積層化

    大河内俊介, 杉本喜正, 尾崎信彦, 石川浩, 浅川潔

    第67回応用物理学会学術講演会 31p-ZF-2  2006.08.31  

  • メタルマスク(MM)法によるInAs量子ドットの選択領域成長

    高田賀章, 尾崎信彦, 大河内俊介, 杉本喜正, 池田直樹, 浅川潔

    第67回応用物理学会学術講演会 31p-ZF-5  2006.08.31  

  • トポロジー最適設計によるフォトニック結晶60°曲がり導波路の広帯域設計

    渡辺慶規, 池田直樹, 杉本喜正, 尾崎信彦, 水谷彰夫, 高田賀章, 北川嘉則, JENSEN J. S, SIGMUND O, BOREL P. I, KRISTENSEN M, 浅川潔

    第67回応用物理学会学術講演会 30a-ZD-5  2006.08.30  

  • トポロジー最適設計によるフォトニック結晶交差導波路の作製と評価

    渡辺慶規, 池田直樹, 杉本喜正, 尾崎信彦, 水谷彰夫, 高田賀章, 北川嘉則, JENSEN J. S, SIGMUND O, BOREL P. I, KRISTENSEN M, 浅川潔

    第67回応用物理学会学術講演会 30a-ZD-6  2006.08.30  

  • GaAs系フォトニック結晶スラブ導波路における低群速度パルス光の群遅延測定

    北川嘉則, 尾崎信彦, 高田賀章, 渡辺慶規, 水谷彰夫, 池田直樹, 杉本喜正, 浅川潔

    第67回応用物理学会学術講演会 30a-ZD-3  2006.08.30  

  • 貫通型平面収束レンズ回折格子を用いた2次元フォトニック結晶導波路への垂直入出力結合

    水谷彰夫, 杉本喜正, 尾崎信彦, 渡辺慶規, 高田賀章, LAERE F, BAETS R, 池田直樹, 浅川潔

    第67回応用物理学会学術講演会 30p-ZD-3  2006.08.30  

  • Magneto-optical study of ferromagnetic semiconductor (Zn,Cr)Te

    N. Nishizawa, S. Marcet, N. Ozaki, S. Kuroda and K. Takita

    The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV) PB-2  2006.08.17  

  • New design for wide/flat bandwidth in photonic crystal-based SMZ all-optical device (PC-SMZ)

    Y. Sugimoto, K. Asakawa, N. Ozaki, A. Mizutani, N. Ikeda, O. Sigmund, P. I. Borel and M. Kristensen  [Invited]

    8th Int. Conf. on Transparent Optical Networks (ICTON 2006) Tu.D2.6  2006.06.20  

  • 超高速光-光デバイス集積化へ向けた量子ドットのメタルマスク選択成長

    尾崎信彦, 高田賀章, 大河内俊介, 杉本喜正, 池田直樹, 浅川潔

    ナノ光・電子デバイスシンポジウム「量子ドットとフォトニック結晶」P-15  2006.05.29   東京大学 生研・先端研 ナノエレクトロニクス連携研究センター、財団法人 光産業技術振興協会

  • フォトニック結晶超高速全光スイッチ(PC‐SMZ)における波長選択方向性結合器の広帯域設計

    渡辺慶規, 杉本喜正, 池田直樹, 尾崎信彦, 水谷彰夫, 高田賀章, 浅川潔

    2006年電子情報通信学会総合大会 C-3-78  2006.03.27  

  • フォトニック結晶超高速光スイッチ(PC‐SMZ)における方向性結合器の広帯域設計

    渡辺慶規, 杉本喜正, 池田直樹, 尾崎信彦, 水谷彰夫, 高田賀章, 浅川潔

    第53回応用物理学関係連合講演会 24p-L-13  2006.03.24  

  • 強磁性半導体(Zn,Cr)Teの磁気円二色性スペクトル

    西沢望, MARCET S, 尾崎信彦, 黒田真司, 滝田宏樹

    第53回応用物理学関係連合講演会 24a-ZM-8  2006.03.24  

  • 2次元フォトニック結晶導波路の低群速度領域境界における透過率の向上

    尾崎信彦, 高田賀章, 渡辺慶規, 池田直樹, 水谷彰夫, 杉本喜正, 浅川潔

    第53回応用物理学関係連合講演会 23a-L-9  2006.03.23  

  • 2次元フォトニック結晶導波路の垂直入出力結合用面型収束レンズ回折格子の検討

    水谷彰夫, 杉本喜正, 尾崎信彦, 渡辺慶規, 高田賀章, LAERE F, BAETS R, 池田直樹, 浅川潔

    第53回応用物理学関係連合講演会 22p-L-7  2006.03.22  

  • Improvement of transmission characteristics by hetero-2D photonic crystal slab waveguides with different group velocities

    N. Ozaki, Y. Takata, Y. Watanabe, N. Ikeda, A. Mizutani, Y. Sugimoto, and K. Asakawa

    The 4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures P-27  2006.03.08  

  • Topology optimization for two-dimensional photonic crystal waveguides with wide and flat bandwidths in ultra-fast all-optical switch (PC-SMZ)

    Y. Watanabe, Y. Sugimoto, N. Ikeda, N. Ozaki, A. Mizutani, Y. Takata, J. S. Jensen, O. Sigmund, P. I. Borel, M. Kristensen, and K. Asakawa

    The 4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures P-26  2006.03.08  

  • Design of planar lens grating for vertical coupling on 2D photonic crystal slab waveguide

    A. Mizutani, F. Laere, R. Baets, N. Ozaki, Y. Watanabe, Y. Takata, Y. Sugimoto, and K. Asakawa

    The 4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures P-24  2006.03.08  

  • Site-Control of InAs Quantum Dot Formation using Nano-Jet Probe Method

    S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, and K. Asakawa

    The 4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures P-25  2006.03.08  

  • 強磁性半導体(Zn,Cr)TeのMBE法による作製と磁性評価およびキャリアドーピング~強磁性起源解明とキャリアドーピングによる磁性制御の可能性~

    尾崎信彦、西沢望、Stephane Marcet、黒田眞司、瀧田宏樹  [Invited]

    21世紀COEセミナー  2006.01.30  

  • フォトニック結晶と量子ドットの融合デバイス(PC‐SMZ)‐ナノフォトニクス領域での集積・超高速光信号処理に向けて‐

    杉本喜正, 渡辺慶則, 池田直樹, 尾崎信彦, 水谷彰夫, 高田賀章, JENSEN J. S, SIGMUND O, BOREL P. I, KRISTENSEN M, 浅川潔

    2005年電子情報通信学会ソサイエティ大会 CS-8-3  2005.09.22  

  • トポロジー最適化手法を用いたフォトニック結晶交差導波路の設計

    渡辺慶規, 杉本喜正, 池田直樹, 尾崎信彦, 水谷彰夫, 高田賀章, JENSEN J. S, SIGMUND O, BOREL P. I, KRISTENSEN M, 浅川潔

    2005年電子情報通信学会ソサイエティ大会 C-3-82  2005.09.21  

  • Significant Enhancement of Ferromagnetism by n-type Doping in (Zn,Cr)Te

    N. Nishizawa, S. Marcet, N. Ozaki, S. Kuroda and K. Takita

    12th INTERNATIONNAL CONFERENCE ON II-VI COMPOUNDS Tue-P-79  2005.09.13  

  • (応用物理学会講演奨励賞受賞記念講演)強磁性半導体(Zn,Cr)Teへの不純物ドーピングによる磁性変化

    尾崎信彦, 西沢望, 黒田真司, 滝田宏樹  [Invited]

    第66回応用物理学会学術講演会 10p-ZQ-2  2005.09.10  

  • 新規強磁性半導体(Zn,Cr)Teにおけるキャリアドーピングの磁性への影響

    黒田真司, 西沢望, MARCET Stephane, 尾崎信彦, 瀧田宏樹

    第66回応用物理学会学術講演会 9p-ZQ-8  2005.09.09  

  • フォトニック結晶導波路交差構造のトポロジー最適設計

    渡辺慶規, 杉本喜正, 池田直樹, 尾崎信彦, 水谷彰夫, 高田賀章, JENSEN J. S, SIGMUND O, BOREL P. I, KRISTENSEN M, 浅川潔

    第66回応用物理学会学術講演会 8p-H-4  2005.09.08  

  • Effect of carrier doping on the magnetic properties of Zn1-xCrxTe

    N. Nishizawa, T. Kumekawa, S. Marcet, N. Ozaki, S. Kuroda and K. Takita

    The 3rd International School and Conference on semiconductor Spintronics and Quantum Information Technology O-2  2005.08.03  

  • 強磁性半導体(Zn,Cr)Teのn型ドーピングによる強磁性の増大

    尾崎信彦、粂川竜巳、西沢望、Stéphane Marcet、黒田眞司、瀧田宏樹

    第52回応用物理学関係連合講演会 29p-YD-15  2005.03.29  

  • 高Cr組成(Zn,Cr)Teの電気伝導特性と磁性

    粂川竜巳, 西沢望, MARCET Stephane, 尾崎信彦, 黒田真司, 瀧田宏樹

    第52回応用物理学関係連合講演会 29p-YD-17  2005.03.29  

  • n型ドープ強磁性半導体(Zn,Cr)TeのMBE成長と磁気輸送特性

    西沢望, 粂川竜巳, MARCET Stephane, 尾崎信彦, 黒田真司, 瀧田宏樹

    第52回応用物理学関係連合講演会 29p-YD-16  2005.03.29  

  • Zn1-xCrxTeにおけるキャリアドーピングの磁性への影響

    尾崎信彦、粂川竜巳、西沢望、St?phane Marcet、黒田眞司、瀧田宏樹

    日本物理学会第60回年次大会 24pZC-2  2005.03.24   日本物理学会

  • p型強磁性半導体Zn<sub>1-x</sub>Cr<sub>x</sub>Teの磁性と電気伝導特性

    尾崎信彦, 粂川竜巳, 西沢望, 黒田真司, 滝田宏樹

    第65回応用物理学会学術講演会 3a-X-6  2004.09.03  

  • MBE growth of novel diluted magnetic semiconductor Zn1-xCrxTe

    N. Ozaki, N. Nishizawa, S. Kuroda, and K. Takita

    14th International Conference on Crystal Growth (ICCG-14) T02-1 1329  2004.08.13  

  • Magnetic behaviors of ferromagnetic semiconductor Zn1-xCrxTe grown by MBE

    N. Ozaki, N. Nishizawa, S. Kuroda, and K. Takita

    The 3rd International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors (PASPS III)  2004.07.21  

  • Magnetic properties of un-doped and N-doped Zn1-xCrxTe grown by MBE

    N. Ozaki, N. Nishizawa, S. Kuroda, and K. Takita

    27th Int. Conf. on the Physics of Semiconductors (ICPS-27) Q5.065  2004.07  

  • Magnetic and structural properties of MBE-grown Zn1-xCrxTe films

    N. Ozaki, N. Nishizawa, S. Kuroda, and K. Takita

    International Conference on Nanospintronics Design and Realization (ICNDR) C0133  2004.05  

  • Cd1-xMnxTe/Cd1-yMgyTe磁性2次元電子系の準位交差磁場における異常

    岩崎剛彦,尾崎信彦,梅本和宏,黒田眞司,滝田宏樹

    日本物理学会第59回年次大会 28pYF-1  2004.03.28   日本物理学会

  • レーザーアブレーション法で作製したZn<sub>1-x</sub>Co<sub>x</sub>Oの磁気輸送特性の異方性

    LEE J W, 尾崎信彦, 黒田真司, 瀧田宏樹

    第51回応用物理学関係連合講演会 28p-ZK-6  2004.03.28  

  • NドープZn<sub>1-x</sub>Cr<sub>x</sub>Teの電気的・磁気的特性

    尾崎信彦, 岡林郁治, 西沢望, 黒田真司, 瀧田宏樹

    第51回応用物理学関係連合講演会 28p-ZK-9  2004.03.28  

  • MBE法で作製したZn1-xCrxTe薄膜の磁性と構造評価

    尾崎信彦,西沢望,黒田眞司,瀧田宏樹

    日本物理学会第59回年次大会 27pYA-3  2004.03.27   日本物理学会

  • Magnetic and transport properties of MBE-grown Zn1-xCrxTe and N-doped Zn1-xCrxTe

    N. Ozaki, N. Nishizawa, K.-T. Nam, S. Kuroda, and K. Takita

    11th International Conference on II-VI compounds Th-4.15  2003.09.25  

  • Magnetotransport and magnetic properties of p-Zn1-xMnxTe:N -Carrier-induced ferromagnetism-

    K.-T. Nam, S. Kuroda, T. Kumekawa, N. Ozaki, and K. Takita

    11th International Conference on II-VI compounds Th-2.4  2003.09.25  

  • Zn<sub>1-x</sub>Cr<sub>x</sub>Te及びZn<sub>1-x</sub>Cr<sub>x</sub>Te:Nの磁気的・電気的特性

    尾崎信彦, 岡林郁治, 黒田真司, 滝田宏樹, NAM K T

    第64回応用物理学会学術講演会 2a-ZL-10  2003.09.02  

  • 希薄磁性半導体p‐Zn<sub>1-x</sub>Mn<sub>x</sub>Teにおける強磁性転移のMn組成及びキャリア濃度依存性

    NAM K‐T, 粂川竜巳, 尾崎信彦, 黒田真司, 滝田宏樹

    第64回応用物理学会学術講演会 2a-ZL-9  2003.09.02  

  • レーザーアブレーション法を用いたZn<sub>1-x</sub>Co<sub>x</sub>Oの作製とその磁気抵抗のCo組成依存性

    LEE J W, 尾崎信彦, 黒田真司, 滝田宏樹

    第64回応用物理学会学術講演会 2a-ZL-6  2003.09.02  

  • The carrier concentration dependence of magneto-photoluminescence in n-type modulationdoped Cd1-xMnxTe/Cd1-yMgyTe single quantum wells

    A. Yuzawa, T. Iwazaki, N. Ozaki, S. Kuroda, K. Takita, K. Sato, Y. Imanaka, T. Takamasu, and G. Kido

    15th Int. Conf. on Electronic Properties of Two-Dimensional Systems (EP2DS-15) PB-19  2003.07.15  

  • Zn1-xCrxTeの磁性とキャリアドーピング

    尾崎信彦,岡林郁治,黒田眞司,瀧田宏樹

    日本物理学会第58回年次大会 31aYH-11  2003.03.31   日本物理学会

  • Cd1-xMnxTe/Cd1-yMgyTe磁性2次元電子系の低Mn濃度領域における磁気輸送特性と磁気発光特性

    岩崎剛彦,湯沢亮文,尾崎信彦,黒田眞司,滝田宏樹

    日本物理学会第58回年次大会 30pYH-8  2003.03.30   日本物理学会

  • Cd1-xMnxTe / Cd1-yMgyTe 変調ドープ2次元電子系における磁気発光特性のキャリア濃度依存性

    湯沢亮文,岩崎剛彦,尾崎信彦,黒田眞司,滝田宏樹,佐藤康一,今中康貴,高増正,木戸義勇

    日本物理学会第58回年次大会 30pYH-7  2003.03.30   日本物理学会

  • CdTe自己組織化ドットの周期構造作製の試み

    伊藤直広, 尾崎信彦, 黒田真司, 滝田宏樹

    第50回応用物理学関係連合講演会 29p-X-9  2003.03.29  

  • Zn<sub>1-x</sub>Cr<sub>x</sub>Te薄膜の作製とその磁気的および電気的特性

    尾崎信彦, 岡林郁治, 黒田真司, 滝田宏樹

    第50回応用物理学関係連合講演会 29a-ZH-7  2003.03.29  

  • 水素終端シリコン表面テンプレート上におけるナノ触媒の形成過程

    吉川 純, 尾崎信彦, 植田耕平, 大野 裕, 竹田精治

    日本物理学会第58回年次大会 28pPSB-66  2003.03.28   日本物理学会

  • レーザーアブレーション法を用いたZn<sub>1-x</sub>Co<sub>x</sub>Oの作製とその磁気輸送特性

    LEE J W, 尾崎信彦, 黒田真司, 滝田宏樹

    第50回応用物理学関係連合講演会 28a-ZH-5  2003.03.28  

  • CdTe自己組織化ドット周期構造の作製と光学特性

    伊藤直広, 高橋進吉, 尾崎信彦, 黒田真司, 滝田宏樹

    第63回応用物理学会学術講演会 26a-YE-11  2002.09.26  

  • CdTe/Cd0.8Mg0.2Te変調ドープ試料におけるPLスペクトルのキャリア濃度依存性

    湯沢亮文,岩崎剛彦,尾崎信彦,黒田眞司,滝田宏樹

    日本物理学会2002年秋季大会 6pSA-6  2002.09.06   日本物理学会

  • シリコン結晶に内包された金クラスターの構造

    亀井隆憲,竹田精治,松岡顕,河野日出夫,尾崎信彦

    日本物理学会第57回年次大会 26pWD-5  2002.03.26   日本物理学会

  • シリコンナノワイヤー成長におけるナノ触媒形成過程のSTM観察

    植田耕平,大野裕,尾崎信彦,竹田精治

    日本物理学会第57回年次大会 25pPSB-36  2002.03.25   日本物理学会

  • シリコン中の金シリサイド微粒子の構造

    亀井隆典,松岡顕,尾崎信彦,河野日出夫,竹田精治,堀野裕治,田中孝治

    日本物理学会第57回年次大会 25aXR-7  2002.03.25   日本物理学会

  • VLS機構による自己成長型Siナノワイヤーの生成起点

    尾崎信彦,植田耕平,河野日出夫,竹田精治

    日本物理学会第57回年次大会 24aWD-4  2002.03.24   日本物理学会

  • 金蒸着Si(111)水素終端面の高温STM観察

    植田耕平,大野裕,尾崎信彦,竹田精治

    日本物理学会2001年秋季大会 18aWD-9  2001.09.18   日本物理学会

  • シリコンナノワイヤー成長におけるバイファケーション

    尾崎信彦,竹田精治

    日本物理学会2001年秋季大会 17pTF-1  2001.09.17   日本物理学会

  • Formation mechanism of Si surface nanoholes by means of scanning tunneling microscopy combined with transmission electron microscopy

    N. Ozaki, Y. Ohno, and S. Takeda

    The 6th international conference on Atomically Controlled Surfaces, Interface and Nanostructures (ACSIN-6) P37  2001.07.11  

  • STMによるシリコン表面ナノホール形成初期過程の観察

    尾崎信彦, 大野裕, 丹原匡彦, 濱田大介, 山崎順, 竹田精治

    第48回応用物理学関係連合講演会 30aZM-1  2001.03.30  

  • セルフイオン照射Siの断面観察

    濱田大介,尾崎信彦,竹田精治

    日本物理学会第56回年次大会 29pPSA-29  2001.03.29   日本物理学会

  • Si(111)水素終端表面上に蒸着された金クラスターのSTM観察

    植田耕平,大野裕,尾崎信彦,竹田精治

    日本物理学会第56回年次大会 29pPSA-27  2001.03.29   日本物理学会

  • シリコン表面ナノホールのSTM観察

    尾崎信彦,大野裕,丹原匡彦,濱田大介,山崎順,竹田精治

    日本物理学会第56回年次大会 28pYQ-10  2001.03.28   日本物理学会

  • Formation mechanism of nanoholes on silicon surface

    N. Ozaki, Y. Ohno, M. Tanbara, D. Hamada, J. Yamasaki and S. Takeda

    International Symposium on Surface and Interface Properties of Different Symmetry Crossing (ISSI PDSC-2000) P-107  2000.10.18  

  • シリコン表面上の電子線誘起欠陥のSTM観察

    尾崎信彦,丹原匡彦,山崎順,濱田大介,白浜晃一,河野日出夫,大野裕,竹田精治

    日本物理学会第55回年次大会 24pPSA-63  2000.09.24   日本物理学会

  • シリコン表面に生成した多形シリコンナノワイヤー

    尾崎信彦,大野裕,竹田精治

    日本物理学会第55回年次大会 23pTA-11  2000.09.23   日本物理学会

  • シリコンナノワイヤーのTEM内その場可視分光装置による光学測定

    尾崎信彦,大野裕,竹田精治

    日本物理学会春の分科会 23aW-13  2000.03.23   日本物理学会

  • Optical properties of Si nanowires on a Si{111} surface

    N. Ozaki, Y. Ohno and S. Takeda

    MRS 1999 Fall Meeting P3.7  1999.11.29  

  • シリコン{111}表面上に生成したシリコンナノワイヤーの光物性

    尾崎信彦, 大野裕, 竹田精治

    日本物理学会秋の分科会 27pZ-5  1999.09.27  

  • Siナノワイヤー(ナノウィスカー)における可視発光

    尾崎信彦, 大野裕, 竹田精治

    第60回応用物理学会学術講演会 3pZN-7  1999.09.03  

  • Siナノウィスカーの光学特性

    尾崎信彦, 大野裕, 竹田精治

    第46回応用物理学関係連合講演会 28pZL-9  1999.03.28  

  • VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

    N. Ozaki, Y. Ohno, S. Takeda and M. Hirata

    MRS 1998 Fall Meeting F5.27  1998.12.01  

  • シリコン(111)面上に生成したシリコン・ナノウィスカーの構造

    尾崎信彦,大野裕,竹田精治,平田光兒

    日本物理学会秋の分科会 28aT-7  1998.09.28   日本物理学会

  • シリコン(111)表面上でのシリコン・ナノウィスカーの生成

    尾崎信彦,大野裕,竹田精治,平田光兒

    日本物理学会第53回年次大会 30aYK-2  1998.03.30   日本物理学会

  • 水素終端したSi(111)表面上でのSiナノウィスカーの生成

    尾崎信彦,大野裕,竹田精治

    第45回応用物理学関係連合講演会 28aPC-11  1998.03.28   (東京工科大学)  応用物理学会

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Patents

  • 波長掃引型光コヒーレンストモグラフィー装置

    Patent no: 特許第7265258号

    Date registered: 2023.04.18 

    Date applied: 2019.07.30 ( 特願2019-139400 )   Publication date: 2021.02.18 ( 特開2021-022684 )  

    Inventor(s)/Creator(s): 尾崎信彦  Applicant: 国立大学法人和歌山大学

  • 3次元量子構造の評価方法、3次元量子構造評価装置、及びコンピュータプログラム

    Patent no: 特許第7054511号

    Date registered: 2022.04.06 

    Date applied: 2018.01.11 ( 特願2018-2667 )   Publication date: 2019.07.22 ( 特開2019-120668 )  

    Inventor(s)/Creator(s): 尾崎信彦、生野大吾  Applicant: 国立大学法人和歌山大学

  • 光デバイスの製造方法

    Patent no: 特許第6916510号

    Date registered: 2021.07.20 

    Date applied: 2017.01.11 ( 特願2017-2562 )   Publication date: 2018.07.19 ( 特開2018-113324 )  

    Inventor(s)/Creator(s): 尾崎信彦、兼平真吾、林佑真  Applicant: 国立大学法人和歌山大学

  • 断層構造の観測方法、観測装置、及びコンピュータプログラム

    Patent no: 6677407

    Date registered: 2020.03.13 

    Date applied: 2015.10.20 ( 特願2015-206611 )   Publication date: 2017.04.27 ( 特開2017-78632 )  

    Inventor(s)/Creator(s): 尾崎信彦、西剛史、杉本喜正、池田直樹  Applicant: 国立大学法人和歌山大学

  • 多波長光源装置および多波長光源システム

    Patent no: 6274488

    Date registered: 2018.01.19 

    Date applied: 2013.09.17 ( 特願2013-192156 )   Publication date: 2015.03.30 ( 特開2015-60880 )  

    Inventor(s)/Creator(s): 尾崎信彦、小田久哉、杉本喜正、池田直樹  Applicant: 国立大学法人和歌山大学

  • 光半導体基板及び光源用装置

    Patent no: 5812236

    Date registered: 2015.10.02 

    Date applied: 2010.08.20 ( 特願2010-184710 )   Publication date: 2012.03.01 ( 特開2012-44026 )  

    Inventor(s)/Creator(s): 尾崎信彦  Applicant: 国立大学法人和歌山大学

  • 微細構造素子製造装置及び微細構造素子生産方法

    Patent no: 5077880

    Date registered: 2012.09.07 

    Date applied: 2007.09.03 ( 特願2007-227281 )   Publication date: 2009.03.19 ( 特開2009-59973 )  

    Inventor(s)/Creator(s): 浅川潔、大河内俊介、尾崎信彦  Applicant: 国立大学法人和歌山大学

  • 水分量モニタ装置、光電素子、及び光電素子の製造方法

    Date applied: 2023.10.06 ( 特願2023-174319 )  

    Inventor(s)/Creator(s): 尾崎信彦、奥野光基  Applicant: 国立大学法人和歌山大学

  • 断層画像の解析方法、解析装置、及びコンピュータプログラム

    Date applied: 2022.07.13 ( 特願2022-112774 )  

    Inventor(s)/Creator(s): 尾崎信彦、玉置将之  Applicant: 国立大学法人和歌山大学

  • 多波長光源及び多波長光源システム

    Date applied: 2021.08.24 ( 特願2021-136639 )   Publication date: 2023.03.08 ( 特開2023-031128 )  

    Inventor(s)/Creator(s): 尾崎信彦、大島 仁  Applicant: 国立大学法人和歌山大学

  • 解析装置、センシングシステム、解析方法、及び、コンピュータプログラム

    Date applied: 2020.02.26 ( 特願2020-30167 )  

    Inventor(s)/Creator(s): 尾崎信彦、平岡玄理  Applicant: 国立大学法人和歌山大学

  • 差周波発生器及び差周波発生方法

    Date applied: 2017.08.24 ( 特願2017-161387 )   Publication date: 2019.03.14 ( 特開2019-40034 )  

    Inventor(s)/Creator(s): 尾崎信彦、小田久哉、中濱照之  Applicant: 国立大学法人和歌山大学

  • 量子ドットおよび作製方法

    Date applied: 2015.08.27 ( 特願2015-167889 )   Publication date: 2017.03.02 ( 特開2017-45881 )  

    Inventor(s)/Creator(s): 尾崎信彦、林佑真、大河内俊介  Applicant: 国立大学法人和歌山大学、日本電気株式会社

  • 光照射による水分解の方法、水素発生装置、炭素の使用方法、及び犠牲材

    Date applied: 2012.08.22 ( 特願2012-183641 )   Publication date: 2014.03.06 ( 特開2014-40349 )  

    Inventor(s)/Creator(s): 秋元郁子、尾崎信彦、前田宏輔  Applicant: 国立大学法人和歌山大学

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Research Exchange

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    2023.12
     
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  • 令和3年度生体医歯工学共同研究

    2021.06
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  • 令和2年度生体医歯工学共同研究

    2020.06
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    2021.03
     

     Joint research

  • イノベーションジャパン2019~大学見本市&ビジネスマッチング~

    2019.08
     
  • 令和元年度生体医歯工学共同研究

    2019.05
    -
    2020.03
     

     Joint research

  • 平成30年度生体医歯工学共同研究拠点成果報告会

    2019.03
     
  • 平成30年度生体医歯工学共同研究

    2018.05
    -
    2019.03
     

     Joint research

  • 材料新技術説明会

    2018.01
     
  • 大阪府立大学・和歌山大学工学研究シーズ合同発表会

    2017.10
     
  • 静岡大学電子工学研究所機能強化経費共同研究

    2017.04
    -
    2018.03
     

     Joint research

  • メディカルジャパン2017大阪

    2017.02
     
  • 第6回おおた研究・開発フェア

    2016.10
     
  • 静岡大学電子工学研究所機能強化経費共同研究

    2016.06
    -
    2017.03
     

     Joint research

  • 超高精度可視光光源μOCT装置の開発

    2016.05
    -
    2017.03
     

     Joint research

  • 東北大学金属材料研究所 研究部共同研究

    2016.04
    -
    2017.03
     

     Joint research

  • キャンパス・イノベーションセンター東京 新技術説明会

    2015.11
     
  • イノベーションジャパン2015

    2015.08
     
  • 第3回 和歌山大・徳島大合同 光・ナノテクノロジー研究会

    2015.08
     
  • 静岡大学電子工学研究所共同研究プロジェクト

    2015.05
    -
    2016.03
     

     Joint research

  • 超広帯域光源を用いた高精度高精細OCT装置の開発

    2014.10
    -
    2015.03
     

     Joint research

  • BioTech2014

    2014.05
     
  • 東北大学金属材料研究所 研究部共同研究

    2014.04
    -
    2016.03
     

     Joint research

  • 第11回光科学若手研究会

    2013.11
     
  • 量子ドットを用いた高効率増感型太陽電池への応用

    2013.10
    -
    2014.03
     

     Joint research

  • 第2回 和歌山大・徳島大合同 光・ナノテクノロジー研究会

    2013.08
     
  • BioTech2013

    2013.05
     
  • 量子ドット製造技術・応用技術の開発

    2012.10
    -
    2013.03
     

     Joint research

  • 第1回 和歌山大・徳島大合同 光・ナノテクノロジー研究会

    2012.08
     
  • 東北大学金属材料研究所 研究部共同研究

    2012.04
    -
    2014.03
     

     Joint research

  • わかやまテクノ・ビジネスフェア

    2011.12
     
  • 第一回和歌山医工学研究会

    2011.12
     
  • 化学技術者協会60周年記念技術情報交換会

    2011.12
     
  • イノベーションジャパン2011

    2011.09
     
  • 異業種交流会

    2011.03
     
  • 第5回非公開型科学技術情報交換会

    2010.10
     
  • 第62回新無機膜研究会

    2010.09
     
  • 東北大学金属材料研究所 研究部共同研究

    2010.04
    -
    2012.03
     

     Joint research

▼display all

KAKENHI

  • 自己組織化InAs量子ドットによる面発光型広帯域波長掃引光源開発とOCTへの応用

    2023.04
    -
    2026.03
     

    Grant-in-Aid for Scientific Research(B)  Principal investigator

  • 半導体ナノフォトニクス材料による革新的超小型オールインワン・テラヘルツ波源

    2020.07
    -
    2024.03
     

    Grant-in-Aid for Challenging Research(Exploratory)  Principal investigator

  • 利得特性を制御した量子ドットによる超広帯域波長掃引光源の開発とOCTへの応用

    2020.04
    -
    2023.03
     

    Grant-in-Aid for Scientific Research(B)  Principal investigator

  • 量子ドットベース波長掃引光源を導入したSS-OCTシステムの構築(国際共同研究強化)

    2017.11
    -
    2020.03
     

    Fund for the Promotion of Joint International Research / Fostering Joint International Research  Principal investigator

  • InAs量子ドットを用いた超広帯域近赤外波長掃引光源の開発とOCTへの応用

    2016.04
    -
    2019.03
     

    Grant-in-Aid for Scientific Research(B)  Principal investigator

  • 多波長量子ドット成長による超広帯域SLD光源開発と医療OCTへの応用

    2013.04
    -
    2016.03
     

    Grant-in-Aid for Scientific Research(B)  Principal investigator

  • 1細胞計測のためのフォトニクス・マイクロフルイーディックス融合デバイスの構築

    2013.04
    -
    2016.03
     

    Grant-in-Aid for Scientific Research(B)  Co-investigator

  • 多色量子ドットのモノリシック成長によるスペクトル制御可能な近赤外広帯域光源の開発

    2011.04
    -
    2013.03
     

    Grant-in-Aid for Young Scientists(B)  Principal investigator

  • GaAs基盤上波長1.55ミクロン量子ドットの高品質化と光非線形素子への展開

    2010.04
    -
    2013.03
     

    Grant-in-Aid for Scientific Research(C)  Co-investigator

  • フォトニック結晶導波路モードと量子ドット内電子準位共鳴によるキャリア緩和促進

    2009.04
    -
    2011.03
     

    Grant-in-Aid for Young Scientists(B)  Principal investigator

  • 非線形光学量子ドットの位置制御・高密度作製による超微細、超高速光・光デバイス開発

    2006.04
    -
    2008.03
     

    Grant-in-Aid for Young Scientists(B)  Principal investigator

  • 磁性半導体の人工微細構造における物性と新機能発現の探索

    2003.04
    -
    2005.03
     

    Grant-in-Aid for Scientific Research on Priority Areas  Co-investigator

  • 巨大磁気光学効果を有する半導体ナノ構造の作製と光によるその磁性制御

    2002.04
    -
    2004.03
     

    Grant-in-Aid for Scientific Research(B)  Co-investigator

▼display all

Public Funding (other government agencies of their auxiliary organs, local governments, etc.)

  • JST 研究成果最適展開支援事業(A-STEP)

    2011.04
    -
    2012.03
     

    Principal investigator

  • JST 研究成果最適展開支援事業(A-STEP)

    2010.04
    -
    2011.03
     

    Principal investigator

  • NEDO エネルギー使用合理化技術戦略的開発

    2005.04
    -
    2008.03
     

    Co-investigator

Competitive funding, donations, etc. from foundation, company, etc.

  • システム工学部寄附金(公益財団法人日本板硝子材料工学助成会研究助成)

    2020.04
    -
    2023.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(一般財団法人材料科学技術振興財団研究助成)

    2017.04
    -
    2018.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(公益財団法人村田学術振興財団研究助成)

    2016.07
    -
    2017.06
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(ウシオ電機株式会社)

    2016.06
     

    Contribution  Principal investigator

  • システム工学部寄附金(公益財団法人テルモ生命科学芸術財団研究助成)

    2015.12
    -
    2016.11
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(日立造船株式会社)

    2015.09
     

    Contribution  Principal investigator

  • システム工学部寄附金(キャノン財団研究助成)

    2012.04
    -
    2014.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(キャノン財団研究助成)

    2012.04
    -
    2014.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(一般財団法人キヤノン財団研究助成)

    2012.04
    -
    2014.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(一般財団法人キヤノン財団研究助成)

    2012.04
    -
    2014.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(カシオ科学振興財団研究助成)

    2011.11
    -
    2012.11
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(日本板硝子材料工学助成会研究助成)

    2011.04
    -
    2012.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(矢崎科学技術振興記念財団研究助成)

    2010.04
    -
    2011.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(村田学術振興財団研究助成)

    2008.04
    -
    2009.03
     

    Research subsidy  Principal investigator

  • システム工学部寄附金(池谷科学技術振興財団研究助成)

    2008.04
    -
    2009.03
     

    Research subsidy  Principal investigator

▼display all

Joint or Subcontracted Research with foundation, company, etc.

  • 近赤外光を用いたマイクロニードル形状および薬剤投与状況の非接触経時モニタリング技術の開発(研究成果展開事業 A-STEPトライアウト)

    2020.11
    -
    2021.10
     

    Contracted research  Principal investigator

  • 新規産業発展に向けた和歌山発医工連携イノベーションによる最先端医療イメージング技術の開発

    2019.09
    -
    2020.03
     

    Contracted research  Principal investigator

  • 超高精度可視光光源μOCT装置の開発

    2016.05
    -
    2016.06
     

    Joint research  Principal investigator

  • 工業用途高分解能光断層イメージングシステムの開発

    2015.10
    -
    2016.09
     

    Contracted research  Principal investigator

  • 超広帯域光源を用いた高精度高精細OCT装置の開発

    2014.11
    -
    2015.03
     

    Joint research  Principal investigator

  • 量子ドットを用いた高効率増感型太陽電池への応用

    2013.09
    -
    2014.03
     

    Joint research  Principal investigator

  • 量子ドット製造技術・応用技術の開発

    2012.10
    -
    2013.03
     

    Joint research  Principal investigator

  • フォトニック結晶の創製に関する研究

    2007.04
    -
    2008.03
     

    Contracted research  Principal investigator

▼display all

Instructor for open lecture, peer review for academic journal, media appearances, etc.

  • シンポジウム講演者

    2022.10.31
    -
    2022.11.02

    日本結晶成長学会

     View Details

    講演講師

    第51回結晶成長国内会議(JCCG-51)におけるシンポジウム講演での講演

  • メディア出演等

    2019.09.06

    EE Times Japan

     View Details

    研究成果に係る新聞掲載、テレビ・ラジオ出演

    イノベーションジャパン2019での注目出展(500超の中の7件)として研究内容が紹介された。

  • 非常勤講師

    2017.12
    -
    2018.02

    国立大学法人神戸大学

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    非常勤講師等

    非常勤講師,任期:2017年12月~2018年2月

  • 夢ナビライブ2017

    2017.06

    フロムページ

     View Details

    公開講座・講演会の企画・講師等

    模擬講義を通して大学の学問を紹介する,日付:2017/6/17

  • 第53回真空技術基礎講習会

    2017.05

    日本真空学会関西支部、大阪府技術協会、日本真空工業会関西支部

     View Details

    公開講座・講演会の企画・講師等

    大阪府立産業技術総合研究所にて開催された真空に関する知識、真空装置の基礎技術を習得するための講習会の講師,日付:2017/5/24

  • 講師

    2017.02

    「メディカルジャパン2017 大阪」研究成果企業化促進セミナー

     View Details

    講演講師等

    講師

  • 講師

    2016.11

    株式会社情報機構

     View Details

    講演講師等

    講師

  • 公開体験学習会

    2016.11

    公開体験学習会実行委員会

     View Details

    公開講座・講演会の企画・講師等

    公開体験学習会に出展し、物理学の研究内容を一般向けに分かりやすく伝える展示を行った。,日付:2016/11/13

  • 公開体験学習会

    2015.11

    公開体験学習会実行委員会

     View Details

    公開講座・講演会の企画・講師等

    公開体験学習会に出展し、物理学の研究内容を一般向けに分かりやすく伝える展示を行った。,日付:2015/11/15

  • 公開体験学習会

    2013.11

    公開体験学習会実行委員会

     View Details

    公開講座・講演会の企画・講師等

    公開体験学習会に出展し、物理学の研究内容を一般向けに分かりやすく伝える展示を行った。,日付:2013/11/24

  • 南紀熊野サテライト学部解放授業

    2010.10

    和歌山大学

     View Details

    公開講座・講演会の企画・講師等

    南紀熊野サテライト学部解放授業,日付:2010.10

  • メディア出演等

    2010.03

    日刊自動車新聞

     View Details

    研究成果に係る新聞掲載、テレビ・ラジオ出演

    矢崎科学技術振興記念財団奨励研究助成採択

  • JSPSサマープログラム

    2008.04
    -
    2009.03

    尾崎信彦

     View Details

    国際交流事業

    来日外国人研究者受入,相手国:イギリス

  • メディア出演等

    2007.05

    日刊工業新聞

     View Details

    研究成果に係る新聞掲載、テレビ・ラジオ出演

    第20回安藤博記念学術奨励賞受賞

  • メディア出演等

    2005.03

    日刊工業新聞

     View Details

    研究成果に係る新聞掲載、テレビ・ラジオ出演

    室温強磁性半導体の荷電ドーピングによる磁性制御成功に関する記事

▼display all

Committee member history in academic associations, government agencies, municipalities, etc.

  • 論文委員(2-2Nanodevices分野サブヘッド)

    2022.04
    -
    2022.12
     

    第35回マイクロプロセス・ナノテクノロジー国際会議(MNC2022)

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員

  • 2022年国際固体素子・材料コンファレンス(SSDM2022)論文委員(Area5 Vice-chair)

    2022.01
    -
    2022.12
     

    応用物理学会

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:1年

  • 論文委員

    2021.04
    -
    2021.12
     

    第34回マイクロプロセス・ナノテクノロジー国際会議(MNC2021)

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員

  • 2021年国際固体素子・材料コンファレンス(SSDM2021)論文委員(Area5 Vice-chair)

    2021.01
    -
    2021.12
     

    応用物理学会

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:1年

  • 論文委員

    2020.04
    -
    2020.12
     

    第33回マイクロプロセス・ナノテクノロジー国際会議(MNC2020)

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員

  • 2020年国際固体素子・材料コンファレンス(SSDM2020)論文委員

    2020.01
    -
    2020.12
     

    応用物理学会

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:1年

  • 幹事

    2019.04
    -
    2021.03
     

    応用物理学会関西支部

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:2年

  • 幹事

    2019.04
    -
    2021.03
     

    応用物理学会関西支部

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    国や地方自治体、他大学・研究機関等での委員

    幹事,任期:2019年4月~2021年3月

  • 論文委員

    2019.04
    -
    2019.12
     

    第32回マイクロプロセス・ナノテクノロジー国際会議(MNC2019)

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員

  • 委員

    2019.04
    -
    2019.12
     

    MNC2019論文委員会

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    国や地方自治体、他大学・研究機関等での委員

    委員,任期:2019年4月~2019年12月

  • 2019年国際固体素子・材料コンファレンス(SSDM2019)論文委員

    2019.01
    -
    2019.12
     

    応用物理学会

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:1年

  • 副委員長

    2018.08
    -
    2020.07
     

    電子情報通信学会エレクトロニクスソサエティ システムナノ技術に関する特別研究専門委員会

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    学協会、政府、自治体等の公的委員

    副委員長として、委員会や研究会の主催や運営業務に関わる,任期:2年

  • Steering Committee Member (Local Arrangement)

    2018.05
    -
    2019.05
     

    Compound Semiconductor Week 2019 (CSW2019)

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    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員

  • 2018年国際固体素子・材料コンファレンス(SSDM2018)論文委員

    2018.01
    -
    2018.12
     

    応用物理学会

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:1年

  • 講演

    2017.09
    -
    Now
     

    神戸大学先端融合研究環長

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    国や地方自治体、他大学・研究機関等での委員

    講演,任期:2017年9月~

  • 2017年国際固体素子・材料コンファレンス(SSDM2017)論文委員

    2017.01
    -
    2017.12
     

    応用物理学会

     View Details

    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:1年

  • 副委員長

    2016.08
    -
    2018.07
     

    電子情報通信学会エレクトロニクスソサエティ システムナノ技術に関する時限研究専門委員会

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