Faculty Profiles - UNO Kazuyuki

写真a

UNO Kazuyuki

Name of department

Faculty of Systems Engineering, Materials Engineering

Job title

Associate Professor

Concurrent post

Electronics and Applied Physics Major（Associate Professor）

Mail Address

External link

Education

1990

-

1995

Kyoto University 工学研究科 Department of electrical engineering
1986

-

1990

Kyoto University Faculty of Engineering 電気工学科

Degree

Doctor of Engineering, Kyoto University 1997

Academic & Professional Experience

2008.04

-

Now

Wakayama University Faculty of Systems Engineering 准教授
2005.04

-

2008.03

Wakayama University Faculty of Systems Engineering Associate Professoor
2002.04

-

2005.03

Wakayama University Faculty of Systems Engineering Lecturer
1997.04

-

2002.03

Wakayama University Faculty of Systems Engineering assistant professor
1995.09

-

1997.03

New Energy and Industrial Technology Development Organization
1995.04

-

1995.09

Kyoto University Faculty of Engineering 教務補佐員

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Association Memberships

2012.04

-

Now

日本材料学会
2008

-

Now

The Japan Sciety of Vacuum and Surface Science
1998.02

-

Now

The Japan Society of Applied Physics

Research Areas

Nanotechnology/Materials / Crystal engineering / Oxide Semiconductors, Mist Chemical Vapor Deposition, Gallium Oxide
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering

Seeds

グリーン技術によるパワーエレクトロニクスデバイス材料の研究

Classes (including Experimental Classes, Seminars, Graduation Thesis Guidance, Graduation Research, and Topical Research)

2023 Progress of materials science and engineering Liberal Arts and Sciences Subjects
2023 NA Specialized Subjects
2023 Scientific and Technical English B Specialized Subjects
2023 Graduation Research Specialized Subjects
2023 Materials Engineering Seninar Specialized Subjects
2023 Experiments in Materials Engineering C Specialized Subjects
2023 Experiments of Materials Engineering A Specialized Subjects
2023 Experiments of Materials Engineering B Specialized Subjects
2023 Physics Experiments B Specialized Subjects
2023 Physics Experiments A Specialized Subjects
2023 Disaster Information Engineering Specialized Subjects
2023 Practice in Physics Specialized Subjects
2023 Semiconductor DevicesⅡ Specialized Subjects
2023 Semiconductor DevicesⅠ Specialized Subjects
2023 Numerical Analysis I Specialized Subjects
2023 Numerical Analysis II Specialized Subjects
2023 Electromagnetics Ⅰ Specialized Subjects
2022 Progress of materials science and engineering Liberal Arts and Sciences Subjects
2022 Physics Experiments B Specialized Subjects
2022 Physics Experiments A Specialized Subjects
2022 Practice in Physics Specialized Subjects
2022 Semiconductor DevicesⅡ Specialized Subjects
2022 Semiconductor DevicesⅠ Specialized Subjects
2022 Electromagnetics Ⅰ Specialized Subjects
2022 Graduation Research Specialized Subjects
2022 Graduation Research Specialized Subjects
2022 Graduation Research Specialized Subjects
2022 Experiments in Material Science andChemistry C Specialized Subjects
2022 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2022 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2022 Numerical Analysis II Specialized Subjects
2022 Numerical Analysis I Specialized Subjects
2022 Experiments in Materials Engineering C Specialized Subjects
2022 Experiments of Materials Engineering B Specialized Subjects
2022 Experiments of Materials Engineering A Specialized Subjects
2022 Materials Engineering Seninar Specialized Subjects
2022 Disaster Information Engineering Specialized Subjects
2022 Introduction to Current Systems Engineering A Specialized Subjects
2022 Scientific and Technical English B Specialized Subjects
2022 Nanotechnologies Ⅱ Specialized Subjects
2022 Introductory Seminar in Systems Engineering Specialized Subjects
2021 Graduation Research Specialized Subjects
2021 Numerical Analysis II Specialized Subjects
2021 Practice in Physics Specialized Subjects
2021 Semiconductor DevicesⅡ Specialized Subjects
2021 Numerical Analysis I Specialized Subjects
2021 Experiments in Materials Engineering C Specialized Subjects
2021 Materials Engineering Seninar Specialized Subjects
2021 Physics Experiments B Specialized Subjects
2021 Semiconductor DevicesⅠ Specialized Subjects
2021 Electromagnetics Ⅰ Specialized Subjects
2021 Experiments of Materials Engineering B Specialized Subjects
2021 Physics Experiments A Specialized Subjects
2021 Graduation Research Specialized Subjects
2021 Experiments of Materials Engineering A Specialized Subjects
2021 Disaster Information Engineering Specialized Subjects
2021 Introduction to Current Systems Engineering A Specialized Subjects
2021 Scientific and Technical English B Specialized Subjects
2021 Experiments in Material Science andChemistry C Specialized Subjects
2021 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2021 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2021 Nanotechnologies Ⅱ Specialized Subjects
2021 Progress of materials science and engineering Liberal Arts and Sciences Subjects
2020 Exercises in Majors A Specialized Subjects
2020 Introduction to Majors 1 Specialized Subjects
2020 Progress of materials science and engineering Liberal Arts and Sciences Subjects
2020 Graduation Research Specialized Subjects
2020 Graduation Research Specialized Subjects
2020 Introduction to Current Systems Engineering A Specialized Subjects
2020 Electromagnetics Ⅰ Specialized Subjects
2020 Numerical Analysis II Specialized Subjects
2020 Numerical Analysis I Specialized Subjects
2020 Experiments of Materials Engineering B Specialized Subjects
2020 Experiments of Materials Engineering A Specialized Subjects
2020 Materials Engineering Seninar Specialized Subjects
2020 Experiments in Materials Engineering C Specialized Subjects
2020 Solid State Physics B Specialized Subjects
2020 Solid State Physics A Specialized Subjects
2020 Physics Experiments B Specialized Subjects
2020 Physics Experiments A Specialized Subjects
2020 Disaster Information Engineering Specialized Subjects
2020 Scientific and Technical English B Specialized Subjects
2020 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2020 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2020 Nanotechnologies Ⅱ Specialized Subjects
2020 Experiments in Material Science andChemistry C Specialized Subjects
2020 Practice in Physics Specialized Subjects
2020 Semiconductor Devices Specialized Subjects
2019 Practices in Numerical Analysis Specialized Subjects
2019 Disaster Information Engineering Specialized Subjects
2019 Introduction to Current Systems EngineeringⅠ Specialized Subjects
2019 Scientific and Technical English B Specialized Subjects
2019 Experiments in Material Science and Chemistry Specialized Subjects
2019 Experiments in Applied Physics Specialized Subjects
2019 Advanced Lectures in Applied Physics Specialized Subjects
2019 Solid State Physics Specialized Subjects
2019 Electromagnetics for Materials Ⅰ Specialized Subjects
2019 Introductory Seminar in Systems Engineering Specialized Subjects
2019 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2019 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2019 Nanotechnologies Ⅱ Specialized Subjects
2019 Nanotechnologies Ⅰ Specialized Subjects
2019 Experiments in Material Science andChemistry C Specialized Subjects
2019 Practice in Physics Specialized Subjects
2019 Semiconductor Devices Specialized Subjects
2019 Experiments in Material Science andChemistry B Specialized Subjects
2019 Experiments in Physics Specialized Subjects
2018 Solid State Physics Specialized Subjects
2018 Introduction to Majors 2 Specialized Subjects
2018 Introduction to Majors 1 Specialized Subjects
2018 Practice in Physics Specialized Subjects
2018 Graduation Research Specialized Subjects
2018 Disaster Information Engineering Specialized Subjects
2018 Introduction to Current Systems EngineeringⅠ Specialized Subjects
2018 Scientific and Technical English B Specialized Subjects
2018 Experiments in Material Science and Chemistry Specialized Subjects
2018 Experiments in Applied Physics Specialized Subjects
2018 Advanced Lectures in Applied Physics Specialized Subjects
2018 Electromagnetics for Materials Ⅰ Specialized Subjects
2018 Introduction to Majors 2 Specialized Subjects
2018 Introduction to Majors 1 Specialized Subjects
2018 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2018 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2018 Nanotechnologies Ⅱ Specialized Subjects
2018 Experiments in Material Science andChemistry C Specialized Subjects
2018 Semiconductor Devices Specialized Subjects
2018 Experiments in Physics Specialized Subjects
2017 NA Liberal Arts and Sciences Subjects
2017 Disaster Information Engineering Specialized Subjects
2017 Graduation Research Specialized Subjects
2017 Voluntary Study on Systems Engineering Ⅳ Specialized Subjects
2017 Experiments in Material Science and Chemistry Specialized Subjects
2017 Solid State Physics Specialized Subjects
2017 Electromagnetics for Materials Ⅰ Specialized Subjects
2017 Introduction to Majors 2 Specialized Subjects
2017 Introduction to Majors 2 Specialized Subjects
2017 Introduction to Majors 1 Specialized Subjects
2017 Introduction to Majors 1 Specialized Subjects
2017 Introductory Seminar in Systems Engineering Specialized Subjects
2017 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2017 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2017 Nanotechnologies Ⅱ Specialized Subjects
2017 Nanotechnologies Ⅰ Specialized Subjects
2017 Experiments in Material Science andChemistry C Specialized Subjects
2017 Practice in Physics Specialized Subjects
2017 Experiments in Material Science andChemistry B Specialized Subjects
2017 Experiments in Physics Specialized Subjects
2016 Nanotechnologies Ⅱ Specialized Subjects
2016 Nanotechnologies Ⅰ Specialized Subjects
2016 Introduction to Majors 1 Specialized Subjects
2016 Introduction to Majors 1 Specialized Subjects
2016 Semiconductor Devices Specialized Subjects
2016 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2016 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2016 Experiments in Material Science andChemistry C Specialized Subjects
2016 Experiments in Material Science andChemistry B Specialized Subjects
2016 Experiments in Physics Specialized Subjects
2016 Experiments in Material Science andChemistry A Specialized Subjects
2016 Practice in Physics Specialized Subjects
2016 Voluntary Study on Systems Engineering Ⅳ Specialized Subjects
2016 Solid State Physics Specialized Subjects
2016 Electromagnetics for Materials Ⅰ Specialized Subjects
2016 Introductory Seminar in Systems Engineering Specialized Subjects
2015 Semiconductor Devices Specialized Subjects
2015 Experiments in Material Science andChemistry C Specialized Subjects
2015 Experiments in Material Science andChemistry A Specialized Subjects
2015 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2015 Fundamental PhysicsⅢ Specialized Subjects
2015 Nanotechnologies Ⅱ Specialized Subjects
2015 Practice in Physics Specialized Subjects
2015 Electrical and Electronic Materials Specialized Subjects
2015 Experiments in Material Science andChemistry B Specialized Subjects
2015 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2015 Advanced Material Science andChemistry Ⅱ Specialized Subjects
2015 Nanotechnologies Ⅰ Specialized Subjects
2014 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2014 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2014 Fundamental PhysicsⅢ Specialized Subjects
2014 Fundamental PhysicsⅡ Specialized Subjects
2014 Fundamental PhysicsⅠ Specialized Subjects
2014 Electrical and Electronic Materials Specialized Subjects
2014 Advanced Material Science andChemistry Ⅱ Specialized Subjects
2014 Advanced Material Science andChemistry Ⅰ Specialized Subjects
2014 Nanotechnologies Ⅱ Specialized Subjects
2014 Nanotechnologies Ⅰ Specialized Subjects
2014 Experiments in Material Science andChemistry C Specialized Subjects
2014 Semiconductor Devices Specialized Subjects
2014 Experiments in Material Science andChemistry B Specialized Subjects
2014 Experiments in Material Science andChemistry A Specialized Subjects
2014 Introductory Seminar Liberal Arts and Sciences Subjects
2013 Seminar in Material Science and Chemistry ⅡA Specialized Subjects
2013 Seminar in Material Science and Chemistry ⅠA Specialized Subjects
2013 Fundamental PhysicsⅢ Specialized Subjects
2013 Fundamental PhysicsⅡ Specialized Subjects
2013 Fundamental PhysicsⅠ Specialized Subjects
2013 Electrical and Electronic Materials Specialized Subjects
2013 Advanced Material Science andChemistry Ⅱ Specialized Subjects
2013 Advanced Material Science andChemistry Ⅰ Specialized Subjects
2013 Nanotechnologies Ⅱ Specialized Subjects
2013 Nanotechnologies Ⅰ Specialized Subjects
2013 Experiments in Material Science andChemistry C Specialized Subjects
2013 Semiconductor Devices Specialized Subjects
2013 Experiments in Material Science andChemistry B Specialized Subjects
2013 Experiments in Material Science andChemistry A Specialized Subjects
2013 Advanced Material Technologiesin Environments Liberal Arts and Sciences Subjects
2012 Semiconductor Devices Specialized Subjects
2012 Introduction to Material Science andChemistry Specialized Subjects
2012 Experiments in Material Science andChemistry C Specialized Subjects
2012 Experiments in Material Science andChemistry A Specialized Subjects
2012 Advanced Material Science andChemistry Ⅰ Specialized Subjects
2012 Fundamental PhysicsⅢ Specialized Subjects
2012 Fundamental PhysicsⅠ Specialized Subjects
2012 Introductory Seminar Liberal Arts and Sciences Subjects
2012 Nanotechnologies Ⅱ Specialized Subjects
2012 Electrical and Electronic Materials Specialized Subjects
2012 Experiments in Material Science andChemistry B Specialized Subjects
2012 Advanced Material Science andChemistry Ⅱ Specialized Subjects
2012 Advanced Material Technologiesin Environments Liberal Arts and Sciences Subjects
2012 Fundamental PhysicsⅡ Specialized Subjects
2012 Nanotechnologies Ⅰ Specialized Subjects
2011 Experiments in Material Science andChemistry C Specialized Subjects
2011 Experiments in Material Science andChemistry B Specialized Subjects
2011 Experiments in Material Science andChemistry A Specialized Subjects
2011 Practice in Physics Specialized Subjects
2011 Advanced Material Science andChemistry Ⅱ Specialized Subjects
2011 Advanced Material Science andChemistry Ⅰ Specialized Subjects
2011 Nanotechnologies Ⅱ Specialized Subjects
2011 Nanotechnologies Ⅰ Specialized Subjects
2011 Fundamental PhysicsⅢ Specialized Subjects
2011 Electrical and Electronic Materials Specialized Subjects
2011 Advanced Material Technologiesin Environments Liberal Arts and Sciences Subjects
2010 NA Specialized Subjects
2010 Electrical and Electronic Materials Specialized Subjects
2010 Introductory Seminar Specialized Subjects
2010 NA Specialized Subjects
2010 NA Specialized Subjects
2010 NA Specialized Subjects
2010 NA Specialized Subjects
2010 Advanced Material Technologiesin Environments Liberal Arts and Sciences Subjects
2010 NA Specialized Subjects
2010 NA Specialized Subjects
2010 NA Specialized Subjects
2010 Graduation Research Specialized Subjects
2009 NA Specialized Subjects
2009 NA Specialized Subjects
2009 NA Specialized Subjects
2009 NA Specialized Subjects
2009 NA Specialized Subjects
2009 NA Specialized Subjects
2009 NA Specialized Subjects
2009 Electrical and Electronic Materials Specialized Subjects
2009 NA Specialized Subjects
2009 NA Specialized Subjects
2009 Graduation Research Specialized Subjects
2008 NA Specialized Subjects
2008 NA Specialized Subjects
2008 NA Specialized Subjects
2008 NA Specialized Subjects
2008 NA Specialized Subjects
2008 NA Specialized Subjects
2008 NA Specialized Subjects
2008 NA Specialized Subjects
2008 Electrical and Electronic Materials Specialized Subjects
2008 NA Specialized Subjects
2008 Graduation Research Specialized Subjects
2007 NA Specialized Subjects
2007 NA Specialized Subjects
2007 NA Specialized Subjects
2007 NA Specialized Subjects
2007 NA Specialized Subjects
2007 NA Specialized Subjects
2007 NA Specialized Subjects
2007 NA Specialized Subjects
2007 Electrical and Electronic Materials Specialized Subjects
2007 Introduction to Material Science andChemistry Specialized Subjects
2007 NA Specialized Subjects
2007 Graduation Research Specialized Subjects

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Satellite Courses

2019 NA Liberal Arts and Sciences Subjects
2018 NA Liberal Arts and Sciences Subjects
2017 NA Liberal Arts and Sciences Subjects
2014 Introductory Course of Science for Everyone Liberal Arts and Sciences Subjects

Independent study

2023 Linux環境でC言語を学ぶ
2016 Arduinoを用いたプログラム，電子回路設計
2008 物理学の基礎を視覚的に理解する演習

Classes

2023 Systems Engineering Project SeminarⅡB Master's Course
2023 Systems Engineering Project SeminarⅡA Master's Course
2023 Systems Engineering Project SeminarⅠB Master's Course
2023 Systems Engineering Project SeminarⅠA Master's Course
2023 Digital Device Physics and Engineering Master's Course
2023 Systems Engineering SeminarⅡB Master's Course
2023 Systems Engineering SeminarⅡA Master's Course
2023 Systems Engineering SeminarⅠB Master's Course
2023 Systems Engineering SeminarⅠA Master's Course
2023 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2023 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2023 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2023 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2023 Systems Engineering Advanced Research Doctoral Course
2023 Systems Engineering Advanced Research Doctoral Course
2023 Systems Engineering Global Seminar Ⅰ Doctoral Course
2023 Systems Engineering Global Seminar Ⅰ Doctoral Course
2023 Systems Engineering Global Seminar Ⅱ Doctoral Course
2023 Systems Engineering Global Seminar Ⅱ Doctoral Course
2022 Systems Engineering Global Seminar Ⅱ Doctoral Course
2022 Systems Engineering Global Seminar Ⅰ Doctoral Course
2022 Systems Engineering Advanced Research Doctoral Course
2022 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2022 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2022 Systems Engineering Project SeminarⅡB Master's Course
2022 Systems Engineering Project SeminarⅡA Master's Course
2022 Systems Engineering Project SeminarⅠB Master's Course
2022 Systems Engineering Project SeminarⅠA Master's Course
2022 Semiconductor Device Physics and Engineering Master's Course
2022 Systems Engineering SeminarⅡB Master's Course
2022 Systems Engineering SeminarⅡA Master's Course
2022 Systems Engineering SeminarⅠB Master's Course
2022 Systems Engineering SeminarⅠA Master's Course
2021 Systems Engineering Global Seminar Ⅱ Doctoral Course
2021 Systems Engineering Global Seminar Ⅰ Doctoral Course
2021 Systems Engineering Advanced Research Doctoral Course
2021 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2021 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2021 Systems Engineering Project SeminarⅡB Master's Course
2021 Systems Engineering Project SeminarⅡA Master's Course
2021 Systems Engineering Project SeminarⅠB Master's Course
2021 Systems Engineering Project SeminarⅠA Master's Course
2021 Semiconductor Device Physics and Engineering Master's Course
2021 Systems Engineering SeminarⅡB Master's Course
2021 Systems Engineering SeminarⅡA Master's Course
2021 Systems Engineering SeminarⅠB Master's Course
2021 Systems Engineering SeminarⅠA Master's Course
2020 Systems Engineering Global Seminar Ⅱ Doctoral Course
2020 Systems Engineering Global Seminar Ⅰ Doctoral Course
2020 Systems Engineering Advanced Research Doctoral Course
2020 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2020 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2020 Systems Engineering Project SeminarⅡB Master's Course
2020 Systems Engineering Project SeminarⅡA Master's Course
2020 Systems Engineering Project SeminarⅠB Master's Course
2020 Systems Engineering Project SeminarⅠA Master's Course
2020 Semiconductor Device Physics and Engineering Master's Course
2020 Systems Engineering SeminarⅡB Master's Course
2020 Systems Engineering SeminarⅡA Master's Course
2020 Systems Engineering SeminarⅠB Master's Course
2020 Systems Engineering SeminarⅠA Master's Course
2019 Compound Semiconductors Physics and Engineering Master's Course
2019 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2019 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2019 Systems Engineering Advanced Research Doctoral Course
2019 Systems Engineering Advanced Research Doctoral Course
2019 Systems Engineering SeminarⅡB Master's Course
2019 Systems Engineering SeminarⅡA Master's Course
2019 Systems Engineering SeminarⅠB Master's Course
2019 Systems Engineering SeminarⅠA Master's Course
2019 Systems Engineering Project SeminarⅡB Master's Course
2019 Systems Engineering Project SeminarⅡA Master's Course
2019 Systems Engineering Project SeminarⅠB Master's Course
2019 Systems Engineering Project SeminarⅠA Master's Course
2018 Systems Engineering Advanced Research Doctoral Course
2018 Systems Engineering Advanced Research Doctoral Course
2018 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2018 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2018 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2018 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2018 Systems Engineering Project SeminarⅡB Master's Course
2018 Systems Engineering Project SeminarⅡA Master's Course
2018 Systems Engineering Project SeminarⅠB Master's Course
2018 Systems Engineering Project SeminarⅠA Master's Course
2018 Systems Engineering SeminarⅡB Master's Course
2018 Systems Engineering SeminarⅡA Master's Course
2018 Systems Engineering SeminarⅠB Master's Course
2018 Systems Engineering SeminarⅠA Master's Course
2018 Compound Semiconductors Physics and Engineering Master's Course
2018 Lecture for carrier up in nanotechnology area Master's Course
2017 Compound Semiconductors Physics and Engineering Master's Course
2017 Systems Engineering Advanced Research Doctoral Course
2017 Systems Engineering Advanced Research Doctoral Course
2017 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2017 Systems Engineering Advanced Seminar Ⅰ Doctoral Course
2017 Systems Engineering Project SeminarⅡB Master's Course
2017 Systems Engineering Project SeminarⅡA Master's Course
2017 Systems Engineering Project SeminarⅠB Master's Course
2017 Systems Engineering Project SeminarⅠA Master's Course
2017 Systems Engineering SeminarⅡB Master's Course
2017 Systems Engineering SeminarⅡA Master's Course
2017 Systems Engineering SeminarⅠB Master's Course
2017 Systems Engineering SeminarⅠA Master's Course
2016 Systems Engineering Advanced Research Doctoral Course
2016 Systems Engineering Advanced Research Doctoral Course
2016 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2016 Systems Engineering Advanced Seminar Ⅱ Doctoral Course
2016 Systems Engineering Project SeminarⅡB Master's Course
2016 Systems Engineering Project SeminarⅡA Master's Course
2016 Systems Engineering Project SeminarⅠB Master's Course
2016 Systems Engineering Project SeminarⅠA Master's Course
2016 Systems Engineering SeminarⅡB Master's Course
2016 Systems Engineering SeminarⅡA Master's Course
2016 Systems Engineering SeminarⅠB Master's Course
2016 Systems Engineering SeminarⅠA Master's Course
2016 Nanomaterials Engineering Master's Course
2015 Systems Engineering Advanced Seminar Ⅱ
2015 Systems Engineering Advanced Seminar Ⅰ
2015 Systems Engineering Advanced Research
2015 Systems Engineering SeminarⅡA
2015 Systems Engineering SeminarⅠA
2015 Systems Engineering Project SeminarⅡA
2015 Systems Engineering Project SeminarⅠA
2015 Nanomaterials Engineering
2015 Systems Engineering Advanced Seminar Ⅱ
2015 Systems Engineering Advanced Seminar Ⅰ
2015 Systems Engineering Advanced Research
2015 Systems Engineering SeminarⅡB
2015 Systems Engineering SeminarⅠB
2015 Systems Engineering Project SeminarⅡB
2015 Systems Engineering Project SeminarⅠB
2014 Systems Engineering Global Seminar Ⅰ
2014 Systems Engineering Global Seminar Ⅰ
2014 Systems Engineering Advanced Research
2014 Systems Engineering Advanced Research
2014 Systems Engineering Advanced Seminar Ⅱ
2014 Systems Engineering Advanced Seminar Ⅱ
2014 Systems Engineering Advanced Seminar Ⅰ
2014 Systems Engineering Advanced Seminar Ⅰ
2014 Systems Engineering Project SeminarⅡB
2014 Systems Engineering Project SeminarⅡA
2014 Systems Engineering Project SeminarⅠB
2014 Systems Engineering Project SeminarⅠA
2014 Nanomaterials Engineering
2014 Systems Engineering SeminarⅡB
2014 Systems Engineering SeminarⅡA
2014 Systems Engineering SeminarⅠB
2014 Systems Engineering SeminarⅠA
2013 Systems Engineering Advanced Research
2013 Systems Engineering Advanced Research
2013 Systems Engineering Advanced Seminar Ⅱ
2013 Systems Engineering Advanced Seminar Ⅱ
2013 Systems Engineering Advanced Seminar Ⅰ
2013 Systems Engineering Advanced Seminar Ⅰ
2013 Systems Engineering Project SeminarⅡB
2013 Systems Engineering Project SeminarⅡA
2013 Systems Engineering Project SeminarⅠB
2013 Systems Engineering Project SeminarⅠA
2013 Nanomaterials Engineering
2013 Systems Engineering SeminarⅡB
2013 Systems Engineering SeminarⅡA
2013 Systems Engineering SeminarⅠB
2013 Systems Engineering SeminarⅠA
2012 Systems Engineering Advanced Seminar Ⅱ
2012 Systems Engineering Advanced Seminar Ⅰ
2012 Systems Engineering Advanced Research
2012 Systems Engineering SeminarⅡA
2012 Systems Engineering SeminarⅠA
2012 Systems Engineering Project SeminarⅡA
2012 Systems Engineering Project SeminarⅠA
2012 Nanomaterials Engineering
2012 Systems Engineering Advanced Seminar Ⅱ
2012 Systems Engineering Advanced Seminar Ⅰ
2012 Systems Engineering Advanced Research
2012 Systems Engineering SeminarⅡB
2012 Systems Engineering SeminarⅠB
2012 Systems Engineering Project SeminarⅡB
2012 Systems Engineering Project SeminarⅠB
2011 Systems Engineering Project SeminarⅡB
2011 Systems Engineering Project SeminarⅡA
2011 Systems Engineering Project SeminarⅠB
2011 Systems Engineering Project SeminarⅠA
2011 Systems Engineering Advanced Research
2011 Systems Engineering Advanced Research
2011 NA
2011 NA
2011 Systems Engineering Advanced Seminar Ⅱ
2011 Systems Engineering Advanced Seminar Ⅱ
2011 Systems Engineering Advanced Seminar Ⅰ
2011 Systems Engineering Advanced Seminar Ⅰ
2011 Nanomaterials Engineering
2010 NA Master's Course
2010 NA Master's Course
2010 NA Master's Course
2010 NA Master's Course
2010 NA Master's Course
2010 NA Master's Course
2010 NA Master's Course
2010 NA Master's Course
2010 Nanomaterials Engineering Master's Course
2009 Device Process Engineering Master's Course
2009 NA Master's Course
2009 NA Master's Course
2009 NA Master's Course
2009 NA Master's Course
2008 NA Master's Course
2008 NA Master's Course
2008 NA Master's Course
2008 NA Master's Course
2007 Device Process Engineering Master's Course
2007 NA Master's Course
2007 NA Master's Course
2007 NA Master's Course
2007 NA Master's Course

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Papers and Awards Received Related to Improving Education

2021 グッドレクチャー賞和歌山大学システム工学部 Domestic

Research Interests

Mist Chemical Vapor Deposition
化合物半導体
結晶成長
光デバイス
半導体ナノ構造
Gallium oxide
Oxide Semiconductors

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Published Papers

深紫外光検出器を目指した酸化ガリウム薄膜の水晶基板上ミストCVD成長

宇野和行, 田中一成, 尾友響（Part： Lead author,　Corresponding author )

材料 ( 日本材料学会 ) 73 ( 10 ) 778 - 784 2024.10 [Refereed]

DOI
Improvement of Photoconductivity in a-Oriented α-Ga2O3 Thin Films Grown on Sapphire Substrates by Mist Chemical Vapor Deposition

Kazuyuki Uno, Keishi Yamaoka （Part： Lead author,　Corresponding author )

physica status solidi (b) ( Wiley ) 261 ( 7 ) 2300463 2024.04 [Refereed]

DOI
Control of Al composition of mist chemical vapor deposition grown α-(AlGa)2O3 alloy thin films by acetylacetonation of Al ion

Kazuyuki Uno, Marika Ohta （Part： Lead author,　Corresponding author )

Japanese Journal of Applied Physics ( IOP Publishing ) 62 SF1026 2023.05 [Refereed]

　View Summary

Abstract

We investigated the dominant factors affecting the Al composition of α-(AlGa)2O3 alloy thin films in mist chemical vapor deposition, focusing on the acetylacetonation of the source solutions. The Al acetylacetonate (acac) complex formation time was evaluated using Fourier-transform infrared spectroscopy to examine the effectiveness of heating during stirring of the source solutions. Then, α-(AlGa)2O3 alloy thin films were grown in source solutions in which the state of the acac complex was changed by adding ammonia water and/or hydrochloric acid, and the Al composition increased with increasing the pH value due to acceleration of acetylacetonation. The growth-temperature dependence of the Al composition was also experimentally investigated. The Al composition decreased with increasing growth temperature. The reasons are due to the strength of Al–O bond or dissociation of Al–acac ligand.

DOI
Polysilsesquioxane Gate Dielectric Layers Cured by Ultra‐Violet Light Irradiation Using Thiol‐Ene Reaction for Organic Thin‐Film Transistors

Yoshio Nakahara, Ken-ichiro Yamane, Tomoaki Nakagami, Kazuyuki Uno, Ichiro Tanaka

physica status solidi (a) ( Wiley ) 2023.04 [Refereed]

DOI
Growth of α-(AlGa)2O3 alloy thin films on c-sapphire substrates by mist chemical vapor deposition using acetylacetonated Al and Ga solutions

Marika Ohta, Hiroto Tamura, Kazuyuki Uno （Part： Last author,　Corresponding author )

Applied Physics Express ( IOP Publishing ) 15 ( 5 ) 055502 2022.04 [Refereed]

　View Summary

α-Ga2O3 is a semi-stable phase of Ga2O3 and is known as an ultra-wide-bandgap semiconductor material. α-(AlGa)2O3 alloys are important for their applications in electronic and optoelectronic devices. We investigated the growth mechanism and process of α-(AlGa)2O3 alloys by mist chemical vapor deposition using acetylacetonated Al and Ga aqueous solutions. The contribution of acetylacetonated Al ions to the epitaxial growth was investigated. The effects of an anchoring mechanism on the mosaic spread were experimentally evaluated. Investigating $10\overline{1}4$ X-ray diffraction profiles, strain relaxation processes in film formations are discussed.

DOI
Synthesis and Thin Film Growth of Oxide and Sulfide Semiconductors by Atmospheric Pressure Mist Chemical Vapor Deposition Method

Kazuyuki Uno （Part： Lead author,　Corresponding author )

Sulfric Acid and Industory ( THE SULPHYRIC ACID ASSOCIATION OF JAPAN ) 75 ( 4 ) 41 - 50 2022.04 [Invited]
Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition

Kentaro Kaneko, Kazuyuki Uno, Riena Jinno, Shizuo Fujita

Journal of Applied Physics ( AIP Publishing ) 131 ( 9 ) 090902 - 090902 2022.03 [Refereed] [Invited]

　View Summary

Routes to semi-stable phases of Ga[Formula: see text]O[Formula: see text] are the subject of extended discussions based on the review of growth methods, growth conditions, and precursors in works that report semi-stable phases other than the thermally stable [Formula: see text] phase. The focus here is on mist chemical vapor deposition because it has produced single-phase Ga[Formula: see text]O[Formula: see text] of [Formula: see text], [Formula: see text], and [Formula: see text] (or [Formula: see text]) in terms of the substrate materials, and features of this growth method for phase control are emphasized. Recent reports of phase control by other growth technology give a deeper understanding of how to determine and control the phases, increasing the opportunities to fully utilize the novel and unique properties of Ga[Formula: see text]O[Formula: see text].

DOI
Pentacene memory transistors using ligand-exchanged and energy-level-controlled PbS colloidal nanodots for charge-trapping layers

Seiya Ihara, Kazuyuki Uno, Ichiro Tanaka

Japanese Journal of Applied Physics ( IOP Publishing ) 60 ( 2 ) 028001 - 028001 2021.02 [Refereed]

DOI
Investigation of photo-initiators for ultra-violet light cured polysilsesquioxane gate dielectric layers of organic thin film transistors

Kosuke Hatano, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

Zairyo/Journal of the Society of Materials Science, Japan ( Society of Materials Science Japan ) 69 ( 10 ) 712 - 716 2020.10 [Refereed]

　View Summary

We fabricated pentacene thin-film transistors (TFTs) with ultra-violet (UV) light cured polysilsesquioxane (PSQ) gate dielectric layers using different photo-initiators to reduce UV-curing time. When PSQ layers were cured using Irgacure™ 184 as a photo-initiator, it took 60 minutes to cure them completely. However, the curing time was reduced to be 10 minutes when Irgacure™ 907 was used with a sensitizer because the UV light was absorbed more efficiently. It was also demonstrated that the hole mobility of the pentacene TFTs was not affected by changing the photo-initiator from Irgacure™ 184 to Irgacure™ 907 with a sensitizer.

DOI
Growth mechanism of α-Ga2O3 on a sapphire substrate by mist chemical vapor deposition using acetylacetonated gallium source solutions

Kazuyuki Uno, Marika Ohta, Ichiro Tanaka （Part： Lead author,　Corresponding author )

Applied Physics Letters ( AIP Publishing ) 117 ( 5 ) 052106 - 052106 2020.08 [Refereed]

DOI
手作り分光器の改良～利き目の問題と可変スリット～

井口楓梨, 宇野和行, 富田晃彦

天文教育 32 ( 4 ) 2 - 8 2020.07
Field-effect transistors based on pbs colloidal nano-dot films treated with ammonium sulfide solution

Yumi Takeichi, Nobuhiro Mitani, Kazuyuki Uno, Ichiro Tanaka

Zairyo/Journal of the Society of Materials Science, Japan ( Society of Materials Science Japan ) 67 ( 9 ) 840 - 843 2018.09 [Refereed]

　View Summary

We fabricated field-effect transistors (FETs) using ammonium sulfide-treated PbS colloidal nano-dot (CND) films. After the ligand molecules were removed from the CNDs by the ammonium sulfide treatment, many cracks were observed in the atomic force microscope image of the PbS ND monolayer that was formed by horizontal lifting method. Those cracks were filled and almost disappeared after we repeated the formation of the PbS CND monolayer and removal of the ligand molecules for three times. The FETs fabricated with the cracked PbS ND films exhibited serious bias stress effect and very low hole mobility of 5.6×10-5 cm2V-1s-1, which were attributed to the carrier traps existing on the NDs surface. On the other hand, the carrier mobility of the FETs with the crack-free PbS ND films was improved to be 1.1×10-3 cm2V-1s-1 because the cracks were filled and the trap density was significantly reduced.

DOI
Ester-free cross-linker molecules for ultraviolet-light-cured polysilsesquioxane gate dielectric layers of organic thin-film transistors

Shuichi Okada, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

Japanese Journal of Applied Physics ( Japan Society of Applied Physics ) 57 ( 4 ) 2018.04 [Refereed]

　View Summary

Pentacene thin-film transistors (TFTs) were fabricated with ultraviolet-light (UV)-cured polysilsesquioxane (PSQ) gate dielectric layers using cross-linker molecules with or without ester groups. To polymerize PSQ without ester groups, thiol-ene reaction was adopted. The TFTs fabricated with PSQ layers comprising ester-free cross-linkers showed a higher carrier mobility than the TFTs with PSQ layers cross-linked with ester groups, which had large electric dipole moments that limited the carrier mobility. It was demonstrated that the thiol-ene reaction is more suitable than the conventional radical reaction for UV-cured PSQ with small dielectric constant.

DOI
Improving the carrier mobility of pentacene thin film transistors by surface flattened polysilsesquioxane gate dielectric layers

Daisuke Michiura, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

Zairyo/Journal of the Society of Materials Science, Japan ( Society of Materials Science Japan ) 66 ( 9 ) 644 - 647 2017.09 [Refereed]

　View Summary

The surface flatness of photo-curable polysilsesquioxane (PSQ) films for gate dielectric layers of pentacene thin film transistors (TFTs) was considerably improved by ultra-violet light (UV)/O3 treatment
the root-mean-squared (RMS) roughness was improved from 0.35 to 0.23 nm after 40-minute treatment. However, the PSQ surfaces became hydrophilic because hydroxyl groups, which degraded transistor performances, replaced the organic functional groups such as methyl groups by the UV/O3 treatment. Therefore, 1,1,1,3,3,3-hexamethyldisilazane (HMDS) treatment was successively performed after the UV/O3 treatment to replace the hydroxyl groups with hydrophobic silyl groups. It was found that four-hour HMDS treatment under dry nitrogen was enough to reduce off current of pentacene TFTs. As a result, the carrier mobility of the pentacene TFT fabricated with UV/O3 and HMDS-treated PSQ layers became 0.59 cm2V-1s-1, which was more than seven times higher than that of the pentacene TFTs with untreated PSQ layers.

DOI
ポリシルセスキオキサンゲート絶縁膜の表面平坦化によるペンタセン薄膜トランジスタのキャリア移動度向上

道浦大佑, 中原佳夫, 宇野和行, 田中一郎

材料 66 ( 9 ) 644 - 647 2017.09 [Refereed]
Organic thin-film transistors based on solution-processable benzodithiophene dimers modified with hexyl groups

Takeshi Hirota, Hitoshi Toake, Hideji Osuga, Kazuyuki Uno, Ichiro Tanaka

Japanese Journal of Applied Physics ( IOP Publishing ) 56 ( 4 ) 048002 - 048002 2017.04 [Refereed]

　View Summary

Benzodithiophene dimers modified with hexyl groups (2C<inf>6</inf>-BDT-dimer) were investigated as solution-processable organic semiconductors for organic thin-film transistors (OTFTs). Since 2C<inf>6</inf>-BDT-dimer crystals have an anisotropic shape, flow coating was adopted to grow polycrystalline films. The flow-coated films were inferior to the vacuum-evaporated ones in terms of their crystallinity estimated from X-ray diffraction data. However, the hole mobility of the OTFTs with the flow-coated films, which was 1.7 cm2V−1s−1at maximum, was higher than that of the OTFTs with vacuum-evaporated films because the one-dimensional thin crystals of the flow-coated films were aligned in the flow-coating direction.

DOI
Recent Advancement of Semiconductor Materials and Devices, IV: Zinc Oxide Thin and Thick FIlm Growth by Electrochemical Deposition

Kazuyuki Uno （Part： Lead author,　Corresponding author )

Journal of the Society of Materials Science, Japan ( 日本材料学会 ) 66 ( 4 ) 312 - 317 2017.04 [Refereed] [Invited]
Pentacene memory transistors with a monolayer of ligand-removed semiconductor colloidal nanodots used as a charge-trapping layer

Fumihoru Nakano, Kazuyuki Uno, Ichiro Tanaka

physica status solidi (a) ( Wiley ) 214 ( 3 ) 1600545 - 1600545 2017.03 [Refereed]

DOI
Photoluminescence thermal quenching properties of zinc sulfide grown by mist chemical vapor deposition

Kazuyuki Uno, Yasuyuki Asano, Ichiro Tanaka （Part： Lead author,　Corresponding author )

physica status solidi (b) ( Wiley ) 254 ( 2 ) 1600544 - 1600544 2017.02 [Refereed]

DOI
Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

Kazuyuki Uno, Yuichiro Yamasaki, Ichiro Tanaka （Part： Lead author,　Corresponding author )

Applied Physics Express ( IOP Publishing ) 10 ( 1 ) 015502 - 015502 2017.01 [Refereed]

　View Summary

The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H<inf>2</inf>16O and H<inf>2</inf>18O for ZnO growth and ZnCl<inf>2</inf>and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

DOI
Improving the carrier mobility of pentacene thin film transistors by surface treatment of polysilsesquioxane gate dielectric layers

Daisuke Michiura, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

Zairyo/Journal of the Society of Materials Science, Japan ( Society of Materials Science Japan ) 65 ( 9 ) 652 - 655 2016.09 [Refereed]

　View Summary

We improved the carrier mobility of the pentacene thin film transistors (TFT), which were fabricated with polysilsesquioxane (PSQ) gate dielectric layers, from 0.082 to 0.31 cm2V-1s-1 by treating the PSQ surface with ultra-violet irradiation (UV)/O3 and 1,1,1,3,3,3-hexamethyldisilazane (HMDS). It was found that the PSQ layers were flattened by the UV/O3 treatment, and the PSQ surface became hydrophilic at the same time because the organic functional groups on the PSQ surface were changed to hydroxyl groups. The grains of the pentacene films deposited on the UV/O3-treated PSQ surfaces were found to be as large as a few microns. However, the carrier mobility of the pentacene TFTs was not so much improved as expected from the largely grown pentacene grains probably because the hydroxyl groups scattered the charged carriers. In addition, the off-current of the pentacene TFTs increased by 4 orders of magnitude. It is thus considered that the hydroxyl groups also worked as hopping sites for the increased off-current which flew without the gate voltage. On the other hand, the carrier mobility of the pentacene TFTs fabricated with the PSQ dielectric layers of which surfaces were treated with UV/O3 and HMDS became ∼4 times larger than that without any surface treatment of the PSQ layers, and also the off-current decreased by 3 orders of magnitude because the hydroxyl groups were changed with silyl groups by the HMDS treatment.

DOI
Improving the Carrier Mobility of Pentacene Thin Film Transistors by Surface Treatment of Polysilsesquioxane Gate Dielectric Layers

道浦大佑, 中原佳夫, 宇野和行, 田中一郎

材料 ( 日本材料学会 ) 65 ( 9 ) 652 - 655 2016.09 [Refereed]
Growth of zinc sulfide by mist chemical vapor deposition depending on mist size and thermal conditions in susceptor

Kazuyuki Uno, Yuichiro Yamasaki, Ping Gu, Ichiro Tanaka （Part： Lead author,　Corresponding author )

physica status solidi (c) ( Wiley ) 13 ( 7-9 ) 448 - 451 2016.07 [Refereed]

DOI
High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers

Yu Matsuda, Yoshio Nakahara, Daisuke Michiura, Kazuyuki Uno, Ichiro Tanaka

Journal of Nanoscience and Nanotechnology ( American Scientific Publishers ) 16 ( 4 ) 3273 - 3276 2016.04 [Refereed]

　View Summary

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene)
thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78±0.3 cm2V−1s−1, which are comparable to those of the previously reported transistors using singlecrystalline TIPS-pentacene
micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. It is therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

DOI
Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

Hideto Shibao, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

Journal of Nanoscience and Nanotechnology ( American Scientific Publishers ) 16 ( 4 ) 3327 - 3331 2016.04 [Refereed]

　View Summary

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the
pentacene layers deposited on the UV-light cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added
to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

DOI
Pentacene Memory Transistors Using Monolayer of Ligand-removed Semiconductor Colloidal Nano-dots as a Floating Gate

Fumihoru Nakano, Kazuyuki Uno, Ichiro Tanaka

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) ( IEEE ) 2016 [Refereed]
Temperature Dependence of Photoluminescence Properties of Zinc Sulfide Grown from Aqueous Solutions by Mist Chemical Vapor Deposition

Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) ( IEEE ) 2016 [Refereed]
Growth Mechanism of Zinc Sulfide Films by Mist Chemical Vapor Deposition

Yuichiro Yamasaki, Kazuyuki Uno, Ping Gu, Ichiro Tanaka （Part： Corresponding author )

Journal of the Society of Materials Science, Japan 64 ( 9 ) 707 - 710 2015.09 [Refereed]
Growth of zinc oxide on pyrolytic graphite sheet by electrochemical and mist chemical vapor depositions

Shunsuke Kake, Kazuyuki Uno, Ikuhiro Furotani, Harutaka Makabe, Yuichiro Yamasaki, Ichiro Tanaka （Part： Corresponding author )

Physica Status Solidi (C) Current Topics in Solid State Physics ( Wiley-VCH Verlag ) 11 ( 7-8 ) 1233 - 1236 2014 [Refereed]

　View Summary

Growth of zinc oxide (ZnO) on pyrolytic graphite sheet (PGS) by electrochemical deposition (ECD) and mist chemical vapor deposition (CVD) was investigated in the viewpoint of crystal orientations. We examined the fullwidth at half-maximum (FWHM) of X-ray rocking curve profiles of graphite 0002 and ZnO 0002 diffractions for the investigations. In the case of ECD, thermal annealing at 400, 800, and 1000 °C for PGS before the growth reduced the FWHM value of the grown ZnO. On the other hand, in the case of mist CVD, the growth process and an etching process which may flatten the surface roughness simultaneously occurred. As a result, the FWHM values of the grown ZnO and the PGS were almost the same. These results indicate that each ZnO grain was grown on each graphite grain along with a same c-orientation direction. © 2014 WILEY-VCH Verlag GmbH &amp
Co. KGaA, Weinheim.

DOI
Organic field-effect transistors fabricated by solution process using TMTSF-TCNQ complex crystals grown at various temperatures

Takuya Nawata, Hideo Yamakado, K. Uno, Ichiro Tanaka

physica status solidi (c) ( Wiley ) 10 ( 11 ) 1636 - 1639 2013.11 [Refereed]

DOI
Zinc Oxide Thick Film Growth on n-Type Gallium Nitride by Photoassisted Electrodeposition

Kazuyuki Uno, Junpei Ikegami, Mitsuteru Sainokami, Ichiro Tanaka （Part： Lead author,　Corresponding author )

Journal of the Society of Materials Science, Japan ( The Society of Materials Science, Japan ) 66 ( 11 ) 668 - 671 2013.11 [Refereed]

　View Summary

Zinc oxide (ZnO) thick film growth on n-type gallium nitride (n-GaN) using an electrodeposition was investigated. We supplied electrons to the surface by light excitation using a Xe lamp for a long continuous electrochemical deposition. By using this technique, stable electrochemical reactions for 20h and 120h were realized. The sample grown for 20h had a thickness of 26μm, an averaged optical transmission of 85% in the visible-light region, and no obvious grain boundary from its cross-sectional SEM image. On the other hand, the sample grown for 120h had a thickness of 140μm, an averaged optical transmission of 25%, and many grain boundaries. Optimization of growth conditions for the thickness of above 30∼40μm is necessary.

DOI
Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiophene-dimer films

Tomoya Sakai, Y. Matsumoto, K. Shibamoto, H. Osuga, K. Uno, Ichiro Tanaka

Journal of Crystal Growth ( Elsevier BV ) 378 347 - 350 2013.09 [Refereed]

DOI
ZnO Thick Film Growth on n-GaN by Photoassisted Electrodeposition

Kazuyuki Uno, Yasuhiro Tauchi, Ichiro Tanaka （Part： Lead author,　Corresponding author )

Japanese Journal of Applied Physics ( IOP Publishing ) 52 ( 8S ) 08JE16 - 08JE16 2013.08 [Refereed]

　View Summary

Zinc oxide (ZnO) thick film growth on n-GaN using an electrodeposition technique was investigated. Although the reaction temperature is about 70 °C in cathodic electrodeposition, ZnO can grow epitaxially on GaN owing to their small lattice mismatch. However, the quality of grown ZnO is too high for electrons to be supplied from the substrate. As a consequence, the electrodeposition can continue for only 50 min. On the other hand, in the case of the growth of ZnO on highly oriented pyrolytic graphite (HOPG), the electrochemical reaction can continue for over 15 h owing to the supply of electrons via grain boundaries or defects. For a long continuous electrochemical reaction, we supply electrons to the surface by light excitation using a Xe lamp. A stable electrochemical reaction is realized and a 5-μm-thick ZnO film with high uniformity is obtained.

DOI
Organic Memory Transistors Using Monolayer of Semiconductor Colloidal Nano-Dots as a Floating Gate

Kaori Kajimoto, Daisuke Matsui, Kazuyuki Uno, Ichiro Tanaka

Japanese Journal of Applied Physics ( IOP Publishing ) 52 ( 5S1 ) 05DC04 - 05DC04 2013.05 [Refereed]

　View Summary

We fabricated pentacene-based memory field-effect transistors (FETs) in which a monolayer of semiconductor colloidal nano-dots (NDs) is embedded as a floating gate. After a sufficiently large writing voltage was applied on the control gate, the fabricated FETs showed a large positive threshold voltage (V_{\text{th } }) shift that was attributed to electrons trapped in embedded NDs. The V_{\text{th } } shift was measured as a function of the writing voltage, and it was shown that the minimum writing voltage for memory FETs with small NDs is significantly larger than that for FETs with large ones. This result supports the proposed model of the memory effect in which electrons that tunneled from nearby pentacene molecules are trapped in embedded NDs because the electron energy level in small NDs is higher than that in large ones.

DOI
Investigation of polysilsesquioxane as a gate dielectric material for organic field-effect transistors

M. Kawamura, Yoshio Nakahara, Mitsuhiro Ohse, Maki Kumei, K. Uno, Hidefumi Sakamoto, Keiichi Kimura, Ichiro Tanaka

Applied Physics Letters ( AIP Publishing ) 101 ( 5 ) 053311 - 053311 2012.07 [Refereed]

DOI
Large Memory Effect and High Carrier Mobility of Organic Field-Effect Transistors Using Semiconductor Colloidal Nano-Dots Dispersed in Polymer Buffer Layers

Kaori Kajimoto, Atsushi Kurokawa, Kazuyuki Uno, Ichiro Tanaka

Japanese Journal of Applied Physics ( IOP Publishing ) 50 ( 2 ) 021601 - 021601 2011.02 [Refereed]

　View Summary

We fabricated organic memory field-effect transistors (FETs) using PbS colloidal nano-dots (NDs) dispersed in thin poly(methyl methacrylate) (PMMA) layers inserted between gate insulators (SiO2) and pentacene active layers as floating gates. The colloidal NDs were dispersed in chloroform solution with PMMA, and spin-coated on SiO2 surfaces. The fabricated memory FETs showed significantly large threshold voltage shifts of 64.5 V at maximum after a writing voltage of 100 V was applied to their control gates, and a maximum carrier mobility of 0.36 cm2 V-1 s-1, which was comparable to that of reference pentacene FETs without colloidal NDs, was obtained because of the improved crystallinity of the pentacene films.

DOI
Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, I. Kamiya, H. Sakaki

Physica E: Low-dimensional Systems and Nanostructures ( Elsevier BV ) 42 ( 10 ) 2606 - 2609 2010.09 [Refereed]

DOI
Memory effect of pentacene field-effect transistors with embedded monolayer of semiconductor colloidal nano-dots

Kaori Kajimoto, K. Uno, Ichiro Tanaka

Physica E: Low-dimensional Systems and Nanostructures ( Elsevier BV ) 42 ( 10 ) 2816 - 2819 2010.09 [Refereed]

DOI
Resonant tunneling of electrons through single self-assembled In As quantum dot studied by conductive atomic force microscopy

Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, I. Kamiya, H. Sakaki

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES ( ELSEVIER SCIENCE BV ) 42 ( 10 ) 2606 - 2609 2010.09

　View Summary

Resonant tunneling of electrons through a quantum level in single self-assembled InAs quantum dot (QD) embedded in thin AlAs barriers has been studied. The embedded InAs QDs are sandwiched by 1.7-nm-thick AlAs barriers, and surface InAs QDs, which are deposited on 8.3 nm-thick GaAs cap layer, are used as nano-scale electrodes. Since the surface InAs QD should be vertically aligned with a buried one, a current flowing via the buried QD can be measured with a conductive tip of an atomic force microscope (AFM) brought in contact with the surface QD-electrode. Negative differential resistance attributed to electron resonant tunneling through a quantized energy level in the buried QD is observed in the current-voltage characteristics at room temperature. The effect of Fermi level pinning around nano-scale QD-electrode on resonance voltage and the dependence of resonance voltage on the size of QD-electrodes are investigated, and it has been demonstrated that the distribution of the resonance voltages reflects the size variation of the embedded QDs. (C) 2009 Elsevier B.V. All rights reserved.

DOI
Contact and channel resistances of organic field-effect transistors based on benzodithiophene-dimer films deposited on pentacene crystallinity control layers

A. Kurokawa, Y. Matsumoto, K. Shibamoto, Kaori Kajimoto, H. Osuga, Hideo Yamakado, K. Uno, Ichiro Tanaka

Applied Physics Letters ( AIP Publishing ) 95 ( 26 ) 263307 - 263307 2009.12 [Refereed]

DOI
Carrier transport in benzodithiophene-dimer field-effect transistors with pentacene crystallinity control layers

Y. Matsumoto, S. Takamiya, A. Kurokawa, H. Osuga, K. Uno, Ichiro Tanaka

Applied Physics Letters ( AIP Publishing ) 94 ( 20 ) 203305 - 203305 2009.05 [Refereed]

DOI
Expansion ratio dependence of lattice vibration of GaN using ab initio molecular dynamics calculations

Kazuyuki Uno, Takuki Inoue, Toshiyuki Takizawa, Ichiro Tanaka （Part： Lead author,　Corresponding author )

Journal of Crystal Growth ( Elsevier BV ) 311 ( 10 ) 3100 - 3102 2009.05 [Refereed]

DOI
Crystallinity improvement of benzodithiophene-dimer films for organic field-effect transistors

K. Yamaguchi, S. Takamiya, M. Minami, Y. Doge, Y. Nishide, H. Osuga, K. Uno, Ichiro Tanaka

Applied Physics Letters ( AIP Publishing ) 93 ( 4 ) 043302 - 043302 2008.07 [Refereed]

DOI
Resonant tunneling of electrons through single self-assembled InAs quantum dot at room temperature studied with conductive AFM tip

Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, M. Azuma, K. Umemura, I. Kamiya, H. Sakaki

physica status solidi (c) ( Wiley ) 5 ( 9 ) 2938 - 2940 2008.07

DOI
Investigation of electric double layer and crystal shapes of electrochemically grown zinc oxide

Kazuyuki Uno, Tadayuki Kanda, Masashi Aisu, Takayuki Asaoka, Tsutomu Ina, Ichiro Tanaka, Munenori Yamashita （Part： Lead author,　Corresponding author )

physica status solidi (c) ( Wiley ) 5 ( 9 ) 3141 - 3143 2008.07 [Refereed]

DOI
Organic Field-Effect Transistors Based on Benzodithiophene-Dimer Films

Kazuki Yamaguchi, Kensuke Nakashima, Shota Takamiya, Masafumi Minami, Yuyu Doge, Yosuke Nishide, Hideji Osuga, Kazuyuki Uno, Chikanobu Nakamoto, Ichiro Tanaka

Japanese Journal of Applied Physics ( IOP Publishing ) 46 ( No. 29 ) L727 - L729 2007.07 [Refereed]

　View Summary

We fabricated organic field-effect transistors (OFETs) based on benzodithiophene (BDT)-dimer films by vacuum evaporation. The surface of the BDT-dimer films deposited on a SiO2 gate insulator was so rough that excellent FET characteristics were not obtained. However, the surface morphology of the films deposited on poly(methyl methacrylate) buffer layers was significantly improved, and dense grains of submicron size were formed. Grain size increased from the submicron scale to the micron scale by reducing growth rate from 0.035 to 0.02 nm/s. The fabricated OFETs have shown p-type FET characteristics with a carrier mobility of 0.016 cm2 V-1 s-1. More importantly, it has been demonstrated that the performance of the BDT-dimer OFET is much more stable in air than that of the pentacene OFET.

DOI
Thermal annealing effects and local atomic configurations in GaInNAs thin films

Kazuyuki Uno, Masako Yamada, Ichiro Tanaka, Osamu Ohtsuki, Toshiyuki Takizawa （Part： Lead author,　Corresponding author )

Journal of Crystal Growth ( Elsevier BV ) 278 ( 1-4 ) 214 - 218 2005.05 [Refereed]

DOI
Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode

I. Kamiya, Ichiro Tanaka, Y. Tada, M. Azuma, K. Uno, H. Sakaki

Journal of Crystal Growth ( Elsevier BV ) 278 ( 1-4 ) 98 - 102 2005.05 [Refereed]

DOI
Improved Height Measurement of Single CdSe Colloidal Quantum Dots by Contact-Mode Atomic Force Microscopy Using Carbon Nano-Tube Tips; for the Investigation of Current-Voltage Characteristics

Ichiro Tanaka, Kaori Kajimoto, Kazuyuki Uno, Osamu Ohtsuki, Tomohide Murase, Harumi Asami, Masahiko Hara, Itaru Kamiya

Japanese Journal of Applied Physics ( IOP Publishing ) 44 ( No. 7 ) L249 - L252 2005.01 [Refereed]

　View Summary

We have investigated the distribution of measured heights of single CdSe colloidal quantum dots (QDs) by contact-mode atomic force microscopy. The dot heights measured with metal-coated Si tips, with which large adhesive force is measured between the tip and sample, are much smaller than that expected from optical absorption. This discrepancy could be due to the dot position fluctuation that occurs when the tip is in contact with the dot because the height distribution of the QDs covered with very thin SiO2 layer is in agreement with the optical measurement. On the other hand, when conductive carbon nano-tube (CNT) tips are used, the adhesive force is reduced significantly, and the measured dot heights become close to the expected value. Thus, the measurement of QD height is greatly improved in accuracy with CNT tips. As a result, the current flowing through the QD can be measured, and conductance changes attributed to electron resonant tunneling through the QD are observed.

DOI
Thermal Annealing Effect in GaInNAs Thin Films Estimated by Fluorescence X-Ray Absorption Fine Structure Spectroscopy

Kazuyuki Uno, Masako Yamada, Toshiyuki Takizawa, Ichiro Tanaka （Part： Lead author,　Corresponding author )

Japanese Journal of Applied Physics ( IOP Publishing ) 43 ( 4B ) 1944 - 1946 2004.04 [Refereed]

　View Summary

The radiative efficiency of dilute nitride GaInNAs alloys is improved by thermal annealing. However, the band gap of these alloys is found to significantly blueshift. The structural changes of these alloys occur during thermal annealing. In this study, we studied the local atomic configuration around In atoms using fluorescence X-ray absorption fine structure spectroscopy. By comparing the radial distribution functions of as-grown and annealed GaInNAs thin films, it was found that the number of In atoms surrounding N atoms increases after thermal annealing.

DOI
Conductive-tip atomic force microscopy of CdSe colloidal nanodots

Tanaka, I, E Kawasaki, O Ohtsuki, K Uno, M Hara, H Asami, Kamiya, I

Surface Science ( ELSEVIER SCIENCE BV ) 532 801 - 805 2003.06 [Refereed]

　View Summary

Electronic properties of individual Use colloidal nanodots have been investigated by conductive-tip atomic force microscopy (AFM). Submonolayer-thick films of the colloidal nanodots were fabricated on a self-assembled monolayer of alkanethiol molecules formed on Au(111) surfaces for single dot measurements. First, we simultaneously imaged the topography and conductivity of isolated single dots by AFM operating in contact mode with a conductive tip under appropriate bias voltages. In the current image, it is found that the dot regions have higher electric resistances due to tunneling resistance through the Use dots. We found a 10-nm scale,electric inhomogeneity around the dots, which may correspond to the previously reported etch-pits of Au(111) surfaces formed during the deposition of the alkanethiol molecules. Then, current-voltage characteristics were measured with the conductive tip positioned on the single dots; large changes in the conductivity which suggest resonant tunneling through the quantized energy level in the dot were observed even at room temperature. (C) 2003 Elsevier Science B.V. All rights reserved.

DOI
Conductive-tip atomic force microscopy of CdSe colloidal nanodots

I. Tanaka, E. Kawasaki, O. Ohtsuki, K. Uno, M. Hara, H. Asami, I. Kamiya

Surface Science ( Elsevier BV ) 532-535 801 - 805 2003.06 [Refereed]

DOI
Nearest-Neighbor Configuration in (GaIn)(NAs) Probed by X-Ray Absorption Spectroscopy

Vincenzo Lordi, Vincent Gambin, Stephan Friedrich, Tobias Funk, Toshiyuki Takizawa, Kazuyuki Uno, James S. Harris

Physical Review Letters ( American Physical Society (APS) ) 90 ( 14 ) 145505-1 - 145505-4 2003.04 [Refereed]

DOI
Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure

Vincent Gambin, Vincenzo Lordi, Wonill Ha, Mark Wistey, Toshiyuki Takizawa, Kazuyuki Uno, Stephan Friedrich, James Harris

Journal of Crystal Growth ( Elsevier BV ) 251 ( 1-4 ) 408 - 411 2003.04 [Refereed]

DOI
Current-voltage characteristics of single CdSe colloidal nanodots measured by conductive-tip atomic force microscopy

Ichiro Tanaka, Eri Kawasaki, O. Ohtsuki, K. Uno, M. Hara, H. Asami, T. Murase, I. Kamiya

Materials Research Society Symposium - Proceedings 737 227 - 231 2003

　View Summary

We have investigated current-voltage characteristics of individual CdSe colloidal nanodots by conductive-tip atomic force microscopy (AFM). The colloidal nanodots were spun-coat and scattered on a self-assembled monolayer of thiophene molecules formed on Au (111) surfaces for single dot measurements. A thin SiO2 layer was deposited on the sample surface in order to prevent the dots being moved by the tip during measurement. We imaged the topography of isolated single dots by AFM operated in contact mode, and measured current-voltage characteristics with the conductive tip positioned on single dots
large conductivity changes which suggest resonant tunneling through a quantized energy level in the dot was observed even at room temperature.
Photoluminescence and Photoluminescence Excitation Spectra of AlAs/GaAs Disordered Superlattices with Various Disordered Lengths

Kazuyuki Uno, Susumu Noda, Akio Sasaki （Part： Lead author )

Japanese Journal of Applied Physics ( IOP Publishing ) 35 ( Part 1, No. 5A ) 2566 - 2572 1996.05 [Refereed]

　View Summary

A disordered superlattice (d-SL) is a superlattice with artificial disordering. Temperature dependence of photoluminescence (PL) and PL excitation (PLE) spectra are measured for AlAs/GaAs short-period d-SLs with various disordered lengths and are compared with those of ordered superlattices (o-SLs). X-ray satellite peaks are split and PL peak energies are red-shifted with increase of the unit length of disorder. From the PLE results, radiative recombination processes in the AlAs/GaAs d-SLs are inferred to be type-II. The d-SL with a longer unit length of disorder shows more complicated variations in the PL spectrum with changing temperature. The variations are intensified with increase of the disorder lengths. These variations indicate that the localized strength which corresponds to the disorder length is different among the states induced by disordering. The dominant radiative recombination states at higher temperature would correspond to stronger localized states in the d-SLs.

DOI
Photoluminescence properties of disordered superlattices with fixed GaAs or AlAs layer thickness

Kazuyuki Uno, Susumu Noda, Akio Sasaki （Part： Lead author )

Materials Science and Engineering: B ( Elsevier BV ) 35 ( 1-3 ) 406 - 409 1995.12 [Refereed]

DOI
Photoluminescence thermal‐quenching and carrier localization of AlGaAs disordered superlattices

Kazuyuki Uno, Susumu Noda, Akio Sasaki （Part： Lead author )

Journal of Applied Physics ( AIP Publishing ) 77 ( 9 ) 4693 - 4700 1995.05 [Refereed]

DOI
Temperature dependence of photoluminescence properties of AlAs/AlxGa1-xAs and AlyGa1-yAs/GaAs disordered superlattices

Kazuyuki Uno, Kotaro Hirano, Susumu Noda, Akio Sasaki （Part： Lead author )

Inst. Phys. Conf. Ser. 129 241 - 246 1993.01 [Refereed]

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Books etc

半導体用語大辞典

半導体用語大辞典編集委員会

日刊工業新聞社 1999.03 ISBN: 4526043419

Works

IRCA (Internet Relay Chat Adapter)

宇野和行

1993
Software
IRCW (Internet Relay Chat for Windows)

宇野和行

1993
Software

Awards & Honors

システム工学部論文賞

Winner：宇野和行

2022.10 和歌山大学システム工学部
グッドレクチャー賞（電磁気学Ｉ）

Winner：宇野和行

2021.09 和歌山大学システム工学部
システム工学部論文賞

Winner：宇野和行

2020.10 和歌山大学システム工学部

Conference Activities & Talks

ミストCVD法の結晶成⻑機構︓アセチルアセトナート錯体の第⼀原理分⼦動⼒学計算による熱的安定性評価

宇野和行

2025年第72回応用物理学会春季学術講演会 2025.03.15 (東京理科大学野田キャンパス) 応用物理学会
ミストCVD法における錯体化学と表面化学反応に基づく酸化物半導体の薄膜結晶成長

宇野和行 [Invited]

第11回工学研究シーズ合同発表会 2024.12.13 (和歌山城ホール大会議室) 和歌山大学システム工学部
13族アセチルアセトナート錯体の第一原理計算による構造解析とミストCVD成長

宇野和行

日本材料学会半導体エレクトロニクス部門委員会2024年度第2回研究会 2024.11.16 (京都府京都市西京区京都大学桂) 日本材料学会半導体エレクトロニクス部門委員会
Growth of Amorphous Ga2O3 on Quartz Substrates by Mist Chemical Vapor Deposition

Kazuyuki Uno

International Workshop on Gallium Oxide and Related Materials 2024.05.27 (Berlin)
Amorphous Ga2O3 thin films grown on quartz substrates and their photoconductive properties

尾友響, 田中一成, 宇野和行

2024年第71回応用物理学会春季学術講演会, 24p-P16-6 2024.03.24 (東京都市大学世田谷キャンパス) Japan Society of Applied Physics
High temperature growth of α-Ga2O3 thin films on c, a, m, n, r oriented sapphire substrates by mist chemical vapor deposition

Hiroto Tamura, Kazuyuki Uno

2023年第70回応用物理学会春季学術講演会, 23p-31A-7 2024.03.23 (東京都市大学世田谷キャンパス) Japan Society of Applied Physics
アモルファス酸化ガリウムの成長と光導電特性

尾友響, 宇野和行

日本材料学会半導体エレクトロニクス部門2023年度第3回研究会 2024.01.20 (鳥取大学) 日本材料学会半導体エレクトロニクス部門委員会
深紫外線を高感度に検出するα型酸化ガリウム光半導体デバイス

宇野和行

第3回Challenge万博『いのち輝く未来社会』 2023.11.22 (三井住友銀行東館ライジングスクェア) 関西イノベーションイニシアチブ
Investigation of Initial Growths of alpha-Ga2O3 on Various Oriented Sapphire Substrates Grown by Mist Chemical Vapor Deposition

Hiroto Tamura, Kazuyuki Uno

42nd Electronic Materials Symposium, Th1-6 2023.10.11 (THE KASHIHARA, Kashihara City, Nara Prefecture)
Photoconducting Properties of alpha-Ga2O3 on c- and a-Sapphire Substrates by Mist Chemical Vapor Deposition

Keishi Yamaoka, Kazuyuki Uno

42nd Electronic Materials Symposium, We2-3 2023.10.10 (THE KASHIHARA, Kashihara City, Nara Prefecture)
Growth of Amorphous Ga2O3 on Quartz Substrates by Mist Chemical Vapor Deposition

Kazuyuki Uno

42nd Electronic Materials Symposium, We1-6 2023.10.10 (THE KASHIHARA, Kashihara City, Nara Prefecture)
ソーラーブラインド光の高感度検出による水中での光通信や物体検知

宇野和行

MOBIO産学連携オフィステーマ別合同シーズ発表会－デジタル技術編－ 2023.10.03 (クリエイション・コア東大阪) 大阪府、（公財）大阪産業局
Inivestigation of initial growth of alpha-Ga2O3 in mist-CVD

Hiroto Tamura, Kazuyuki Uno

第84回応用物理学会秋季学術講演会, 21p-P09-17 2023.09.21 (熊本県熊本市熊本城ホール) Japan Society of Applied Physics
Amorphous Ga2O3 thin films grown on quartz substrates using mist chemical vapor deposition

Kazuyuki Uno

第84回応用物理学会秋季学術講演会, 19p-A302-11 2023.09.19 (熊本県熊本市熊本城ホール) Japan Society of Applied Physics
ミストCVD法を用いた高品質な酸化物半導体の作製技術

宇野和行

大学見本市2023～イノベーション・ジャパン～ C-51 2023.08.23 (東京ビッグサイト南展示棟南１ホール（東京都江東区有明3-11-1）) 国立研究開発法人科学技術振興機構
a面サファイア基板上にミストCVD成長した酸化ガリウム薄膜の光導電特性

山岡敬嗣, 宇野和行

日本材料学会半導体エレクトロニクス部門2023年度第1回研究会、講演番号５ 2023.07.29 (大阪市浪速区敷津東2-1-41 大阪公立大学 I-siteなんば) 日本材料学会半導体エレクトロニクス部門委員会
各種面方位サファイア基板上におけるα型酸化ガリウムのミストCVD初期成長過程の検討

田村大翔, 宇野和行

日本材料学会半導体エレクトロニクス部門2023年度第1回研究会、講演番号４ 2023.07.29 (大阪市浪速区敷津東2-1-41 大阪公立大学 I-siteなんば) 日本材料学会半導体エレクトロニクス部門委員会
Photoconducting properties of α-Ga2O3 thin films grown on an a-plane sapphire substrate by mist chemical vapor deposition

Kazuyuki Uno, Keishi Yamaoka

Compound Semiconductor Week 2023, FrE2-4 2023.06.02 (Ramada Plaza Hotel, Jeju)
Growth of Amorphous Ga2O3 on Quartz Substrates by Mist Chemical Vapor Deposition

Kazuyuki Uno

International Workshop on Gallium Oxide and Related Materials (IWGO 2024), MoP_33 2023.05.27 (Palais and Kesselhaus am Kulturbrauerei, Berlin)
アセチルアセトナート化した亜鉛原料⽔溶液を⽤いたa⾯サファイア基板上酸化亜鉛薄膜のミストCVD成⻑

宇野和行, 西岡恵

2023年第70回応用物理学会春季学術講演会、17a-PB01-8 2023.03.17 (上智大学四谷キャンパス) 応用物理学会
a⾯サファイア基板上にミストCVD成⻑した酸化ガリウム薄膜によるMSM型光検出器の基本特性

山岡敬嗣, 宇野和行

2023年第70回応用物理学会春季学術講演会、17a-PB01-24 2023.03.17 (上智大学四谷キャンパス) 応用物理学会
アセチルアセトナート化した亜鉛水溶液によるa面サファイア基板上酸化亜鉛の結晶成長

西岡恵, 宇野和行

日本材料学会半導体エレクトロニクス部門2022年度第2回研究会 2022.11.19 (京都大学桂キャンパス) 日本材料学会半導体エレクトロニクス部門委員会
Structural fluctuation in twist direction of α-(AlGa)2O3 thin films grown on c- and a-sapphire substrates by mist chemical vapor deposition (Pos 1-21)

Kazuyuki Uno, Hiroto Tamura, Marika Ohta

The 4th International Workshop on Gallium Oxide and Related Materials 2022.10.24
Growth of α-(AlGa)2O3 and α-Ga2O3 thin films by mist chemical vapor deposition using acetylacetonated Al and Ga source solutions

Kazuyuki Uno, Hiroto Tamura, Marika Ohta

2022年第83回応用物理学会秋季学術講演会(20p-B203-21) 2022.09.20 (Kawauchi Campus, Tohoku University) Japan Society of Applied Physics

　View Summary

講演番号20p-B203-21
Characterization of semi-stable α-Ga2O3 thin films grown at various temperatures by mist chemical vapor deposition

Kazuyuki Uno, Marika Ohta

Compound Semiconductor Week 2022 2022.06.03 (University of Michigan, Ann Arbor, MI)
Investigation of corundum structured oxide semiconductors by first principles calculations for realization of p-type α-Ga2O3

Atsuto Itsumi, Kazuyuki Uno

2022年第69回応用物理学会春季学術講演会(26p-E202-7) 2022.03.26 (青山学院大学相模原キャンパス＋オンライン) 応用物理学会
ミストCVD法における原料水溶液の錯化とα型酸化ガリウムの高温成長

太田茉莉香, 宇野和行

2021年応用物理学会秋季講演会 2021.09.12 (オンライン（名城大学）) 応用物理学会
Growth of Hematite Thin FIlms by Mist CHemical Vapor Deposition

Hiyori Isojima, Kazuyuki Uno

2021年電気化学秋季大会 2021.09.08 (オンライン（北海道大学）) The Electrochemical Society of Japan
Composition Control of Alpha-AlGaO Alloy Thin Films In Mist CVD

Marika Ohta, Kazuyuki Uno

Compound Semiconductor Week 2021 2021.05.12
配位子交換によりエネルギー準位を制御したPbSコロイダルナノドットを電荷蓄積層に用いたペンタセンメモリトランジスタ

井原聖矢, 宇野和行, 田中一郎

第68回応用物理学会春季学術講演会 2021.03.18
ミストCVD成長におけるα型AlGaO混晶組成制御とAl原子の再脱離

太田茉莉香, 田中一郎, 宇野和行

第68回応用物理学会春季学術講演会 2021.03.17
ミストCVD法によるα型AlGaO混晶成長とAl原子の再脱離

太田茉莉香, 田中一郎, 宇野和行

日本材料学会半導体エレクトロニクス部門委員会令和2年度第3回研究会 2021.01.23
Alイオン錯化時間とミストCVD法によるAlGaO混晶成長

太田茉莉香, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会令和2年度第2回研究会 2020.11.14
Mist CVD法を用いたα-(AlGa)2O3混晶成長におけるアセチルアセトナート錯化の影響

太田茉莉香, 宇野和行, 田中一郎

第81回応用物理学会秋季学術講演会 2020.09.09
アセチルアセトナート化した原料水溶液によるα型酸化ガリウム薄膜のミストCVD成長

宇野和行, 太田茉莉香, 田中一郎

第67回応用物理学会春季学術講演会 2020.03.13
T hermal Stability of Diverse Stable Phases: (AlxGa1-x)2O3 as an Example

Riena Jinno, Kazuyuki Uno, Kentaro Kaneko, Shizuo Fujita

第67回応用物理学会学術講演会, 12a-A301-5 2020.03.12
PbSコロイダルナノドットをフローティングゲートに用いた有機メモリトランジスタの配位子交換による特性改善

井原聖矢, 宇野和行, 田中一郎

第67回応用物理学会春季学術講演会 2020.03
エンチオール反応により紫外線重合させた有機薄膜トランジスタ用ポリシルセスキオキサンゲート絶縁膜

山根健一郎,, 中上智章, 中原佳夫, 宇野和行, 田中一郎

第67回応用物理学会春季学術講演会 2020.03
2C6-BDT-dimerを用いた有機薄膜トランジスタのフローコート法による作製

石井洸一, 大須賀秀次, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会 2019年度第1回講演会・見学会 2020.01
ナフタレンジイミド系材料を用いたn型有機薄膜トランジスタ

田村明日香, 友國里香, 大須賀秀次, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会 2019年度第1回講演会・見学会 2020.01
Growth Control of α-Ga2O3 Thin Films using Chloride-Based Gallium Source Solutions in Mist Chemical Vapor Deposition

Kazuyuki Uno, Kazutoshi Matsumoto, Ichiro Tanaka

The 9th Asia-Pasific Workshop on Widegap Semiconductors (APWS2019) 2019.11.14
ナフタレンジイミド系材料を用いたn型有機薄膜トランジスタの閾値電圧低減

田村明日香, 友國里香, 大須賀秀次, 宇野和行, 田中一郎

薄膜材料デバイス研究会第16回研究集会 2019.11
エンチオール反応により紫外線重合させたポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタ

山根健一郎, 中上智章, 岡田秀一, 中原佳夫, 宇野和行, 田中一郎

薄膜材料デバイス研究会第16回研究集会 2019.11
塩化物系ガリウム希薄水溶液によるα 型酸化ガリウム薄膜のミストCVD 成長(II)

宇野和行, 松本一寿, 田中一郎

第80 回応用物理学会秋季学術講演会 2019.09.21
有機トランジスタ用ポリシルセスキオキサンゲート絶縁膜における紫外線重合開始剤の検討

秦野航輔,, 中原佳夫,, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会 2019年度第1回研究会 2019.07
Field-effect transistors based on ligand-removed PbS nano-dot films treated with ammonium sulfide solution

Yumi Takeichi,, Kazuyuki Uno, Ichiro Tanaka

The 10th Internatinal Conference on Molecular Electronics and BioElectronics 2019.06
Investigation of photo-initiators for ultra-violet light cured polysilsesquioxane gate dielectric layers of organic thin-film transistors

Kosuke Hatano, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

The 10th Internatinal Conference on Molecular Electronics and BioElectronics 2019.06
First Principles Study on Electronic Structures of α-Ga2O3 and α-Ir2O2

Kazuyuki Uno, Taichi Nakamura, Ichiro Tanaka

Compound Semiconductor Week 2019 (CSW2019) 2019.05.21
コランダム構造を有する酸化物半導体の第一原理計算による評価

宇野和行, 中村太紀, 田中一郎

第66 回応用物理学会春季学術講演会 2019.03.11
2C4-BDT-dimerを用いた有機薄膜トランジスタにおける基板加熱フローコート法の改善

森慎吾, 大須賀秀次, 宇野和行, 田中一郎

第66回応用物理学会春季学術講演会 2019.03
有機薄膜トランジスタ用ポリシルセスキオサンゲート絶縁膜の光重合開始剤検討

秦野航輔, 中原佳夫, 宇野和行, 田中一郎

第66回応用物理学会春季学術講演会 2019.03
遮光板を用いた基板加熱フローコート法により成膜した2C4-BDT-dimerを用いた有機薄膜トランジスタ

森慎吾, 大須賀秀次, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成30年度第1回講演会・見学会 2019.02
基板加熱フローコート法により成膜した2C4-BDT-dimer薄膜を用いた有機薄膜トランジスタ

森慎吾, 大須賀秀次, 宇野和行, 田中一郎

薄膜材料デバイス研究会第15回研究集会 2018.11
硫化アンモニウム処理したPbSコロイダルナノドット薄膜を用いた電界効果トランジスタにおける作製プロセスの検討

竹市祐実, 宇野和行, 田中一郎

薄膜材料デバイス研究会第15回研究集会 2018.11
Photoconduvtive properties of α-Ga2O3 MSM devices

K. Uno, C. Umemura, S. Nakamura, I. Tanaka

37th Electronic Materials Symposium (EMS37) 2018.10.10
塩化物系ガリウム希薄水溶液によるα 型酸化ガリウム薄膜のミストCVD 成長

松本一寿, 中村幸, 田中一郎, 宇野和行

第79 回応用物理学会秋季学術講演会 2018.09.19
α-Ga2O3 薄膜を用いた紫外線検出器とその２光子吸収特性

宇野和行, 梅村千里, 中村幸, 田中一郎

第79 回応用物理学会秋季学術講演会 2018.09.19
硫化アンモニウム処理したPbSコロイダルナノドット薄膜を用いた電界効果トランジスタにおける光照射効果

竹市祐実, 宇野和行, 田中一郎

第79回応用物理学会秋季学術講演会 2018.09
Photoconductivity of α-Ga2O3 Thin Films for Solar Blind Photodetectors

Kazuyuki Uno, Chisato Umemura, Kazuyoshi Matsumoto, Sachi Nakamura, Ichiro Tanaka

International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX) 2018.06.04
PbSコロイダルナノドット薄膜を用いた電界効果トランジスタの硫化アンモニウム処理条件の検討

竹市祐実, 宇野和行, 田中一郎

第65回応用物理学会春季学術講演会 2018.03
カーボンフリー酸化ガリウム薄膜のミストCVD 成長

宇野和行

新技術説明会 2018.01.16 科学技術振興機構
エステル基を含まない低分子架橋剤を用いて紫外線重合した有機薄膜トランジスタ用PSQゲート絶縁膜

岡田秀一, 中原佳夫, 宇野和行, 田中一郎

平成29年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会 2018.01
Growth of α-Ga2O3 by mist CVD using carbon-free sources

Sachi Nakamura, Kazuyuki Uno, Ichiro Tanaka

36th Electronic Materials Symposium (EMS-36) 2017.11.08
硫化アンモニウム処理したPbS コロイダルナノドット薄膜を用いた電界効果トランジスタ

竹市祐実, 三谷展弘, 宇野和行, 田中一郎

薄膜材料デバイス研究会第14 回研究集会 2017.10.20
硫化アンモニウム処理したPbS コロイダルナノドット薄膜を用いた電界効果トランジスタ

竹市祐実, 三谷展弘, 宇野和行, 田中一郎

第78 回応用物理学会秋季学術講演会 2017.09.08
ミストCVD 法によるSnOx 薄膜の成長と酸化数制御

中村幸, 宇野和行, 田中一郎

第78 回応用物理学会秋季学術講演会 2017.09.08
「硫化アンモニウム処理したPbS コロイダルナノドット薄膜を用いた電界効果トランジスタ

竹市祐実, 三谷展弘, 宇野和行, 田中一郎

第78 回応用物理学会秋季学術講演会 2017.09.08
ポリシルセスキオキサンゲート絶縁膜の紫外線重合用低分子架教材の検討

岡田秀一, 中原佳夫, 宇野和行, 田中一郎

第78回応用物理学会秋季学術講演会 2017.09
ブチル基で修飾したベンゾジチオフェンダイマーを用いた有機薄膜トランジスタのフローコート法による作製

森慎吾, 福村光平, 大須賀秀次, 宇野和行, 田中一郎

第78回応用物理学会秋季学術講演会 2017.09
Photoluminescence Emissions from Exciton and Defects in CdS Grown by Mist Chemical Vapor Deposition

Kazuyuki Uno, Yuuka Takimoto, Ichiro Tanaka

29th International Conference on Defects in Semiconductor (ICDS2017) 2017.08.03
ミストCVD 法による酸化スズ薄膜の成長

中村幸, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会 2017.07.15
ミストCVD 法によるCdS 薄膜の成長

宇野和行, 瀧本悠華, 田中一郎

第64回応用物理学会春季学術講演会 2017.03.17
ポリシルセスキオキサンゲート絶縁膜の表面平坦化によるペンタセン薄膜トランジスタのキャリア移動度向上

道浦大祐, 中原佳夫, 宇野和行, 田中一郎

第64回応用物理学会春季学術講演会 2017.03.15
溶液プロセス可能なベンゾジチオフェンダイマー誘導体を用いた有機薄膜トランジスタ

廣田武士, 大須賀秀次, 宇野和行, 田中一郎

第64回応用物理学会春季学術講演会 2017.03
コロイダルナノドット単粒子膜を用いた有機メモリトランジスタの特性に対するドットサイズの影響

中野史掘, 宇野和行, 田中一郎

第64回応用物理学会春季学術講演会 2017.03
ヘキシル基で修飾したベンゾジチオフェンダイマーを用いた有機薄膜トランジスタ

廣田武士, 十朱仁, 大須賀秀次, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成28年度第1回講演会・見学会 2017.01
Organic thin film transistors based on solution processed films of benzodithiophenedimers modified with hexyl groups

Takeshi Hirota, Hitoshi Toake, Hideji Osuga, Kazuyuki Uno, Ichiro Tanaka

The 12th International Conference on Nao-Molecular Electronocs (ICNME2016) 2016.12.15
紫外線重合したポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタにおける低分子架橋剤のキャリア移動度に対する影響

岡田秀一, 中原佳夫, 宇野和行, 田中一郎

平成28年度日本材料学会半導体エレクトロニクス部門・ナノ材料部門委員会合同研究会 2016.11
配位子除去をした半導体コロイダルナノドット単粒子膜をフローティングゲートに用いたペンタセンメモリトランジスタ

中野史掘, 宇野和行, 田中一郎

薄膜材料デバイス研究会第13回研究集会 2016.10
ミストCVD 法によるGaP 基板上ZnS の結晶成長

浅野康幸, 宇野和行, 田中一郎

第77回応用物理学会秋季学術講演会 2016.09.14
紫外線重合したポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタのキャリア移動度に対する低分子架橋剤の影響

岡田秀一, 中原佳夫, 宇野和行, 田中一郎

第77回応用物理学会秋季学術講演会 2016.09
Temperature Dependence of Photoluminescence Properties of ZnS Grown by mist CVD

Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

The 35th Electronic Materials Symposium (EMS35) 2016.07.06
Temperature Dependence of Photoluminescence Properties of Zinc Sulfide Grown from Aqueous Solutions by Mist Chemical Vapor Deposition

Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

The 43th Internatinal Symposium on Compound Semiconductor (ISCS2016) 2016.06.27
Pentacene Memory Transistors Using Monolayer of Ligand-removed Semiconductor Colloidal Nano-dots as a Floating Gate

Fumihoru Nakano, Kazuyuki Uno, Ichiro Tanaka

The 43th Internatinal Symposium on Compound Semiconductor (ISCS2016) 2016.06.27
Thermal quenching propertyes of photoluminescence in ZnS grown by mist chemicall vapour deposition

Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

The 15th International Symposium on Science and Technology of Lighting (LS15) 2016.05.25
ミストCVD法を用いて作製したZnS薄膜の光学特性評価

浅野康幸, 宇野和行, 山崎佑一郎, 田中一郎

第63回応用物理学会春季学術講演会 2016.03.21
ポリシルセスキオキサンゲート絶縁膜の表面処理によるペンタセン薄膜トランジスタのキャリア移動度向上

道浦大祐, 中原佳夫, 宇野和行, 田中一郎

第63回応用物理学会春季学術講演会 2016.03.19
コロイダルナノドット単粒子膜をフローティングゲート層に用いた有機メモリトランジスタ

中野史掘, 阪川秀紀, 宇野和行, 田中一郎

第63回応用物理学会春季学術講演会 2016.03
ベンゾゾチオフェン誘導体を用いた有機薄膜トランジスタ

山下真由子, 福村光平, 後藤芙美子, 大須賀秀次, 宇野和行, 田中一郎

第63回応用物理学会春季学術講演会 2016.03
ベンゾジチオフェン系薄膜の成膜性改善と有機薄膜トランジスタの作製

山下真由子, 福村光平, 前田恵, 後藤芙美子, 大須賀秀次, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回講演会・見学会 2016.01.30
ミストCVD法で作製した硫化亜鉛薄膜のフォトルミネッセンス特性

浅野康幸, 宇野和行, 山崎佑一郎, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回講演会・見学会 2016.01.30
ポリシルセスキオキサンをゲート絶縁膜に用いたフレキシブルなペンタセントランジスタの評価

八木一樹, 中原佳夫, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成27年度第2回研究会 2015.11.21
Lattice and Electronic Structure Evaluations of Cu Doped beta Gallium Oxide by ab-initio Calculation

Kazuyuki Uno, Sachi Nakamura, Ichiro Tanaka

The 1st International Workshop on Gallium Oxide and Related Materials (IWGO-1) 2015.11.04
Chemical and Physical Growth Mechanisms of Zinc Sulfide and Zinc Oxide Thin Films Grown by Mist Chemical Vapor Deposition

Kazuyuki Uno, Yuichiro Yamasaki, Ping Gu, Ichiro Tanaka

The 17th International Conference on II-VI Compounds and Related Materials (II-VI 2015) 2015.09.14
ポリシルセスキオキサンをゲート絶縁膜に用いたフレキシブルなペンタセントランジスタ

八木一樹, 中原佳夫, 宇野和行, 田中一郎

第76回応用物理学会秋季学術講演会 2015.09.13
ミストCVD法による酸化亜鉛と硫化亜鉛の成長機構

宇野和行, 山崎佑一郎, 田中一郎

第3 回和歌山大・徳島大合同光・ナノテクノロジー研究会 2015.08.07
ポリシルセスキオキサンを用いた有機薄膜トランジスタ用ゲート絶縁膜

田中一郎, 芝尾秀人, 松田悠, 中原佳夫, 宇野和行

第３回和歌山大・徳島大合同光・ナノテクノロジー研究会 2015.08
Growth mechanisms of ZnS and ZnO thin films by mist CVD

Kazuyuki Uno, Yuichiro Yamasaki, Ping Gu, Ichiro Tanaka

The 34th Electronic Materials Symposium (EMS34) 2015.07.16
紫外線重合したポリシルセスキオキサンをゲート絶縁膜に用いた有機薄膜トランジスタ

道浦大祐, 中原佳夫, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回研究会 2015.07.11
Writing characteristics of organic memory transistors with embedded monolayer of semiconductor colloidal nano-dots

Fumihoru Nakano, Hideki Sakagawa, Kazuyuki Uno, Ichiro Tanaka

17th International Conference on Modulated Semiconductor Structures (MSS-17) 2015.07
紫外線重合したポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタ

芝尾秀人, 中原佳夫, 宇野和行, 田中一郎

第62回応用物理学会春季学術講演会 2015.03
ベンゾジチオフェンダイマー系材料を用いた有機薄膜トランジスタの作製

山下真由子, 福村光平, 前田恵, 後藤芙美子, 大須賀秀次, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成26年度第1回講演会・見学会 2015.01
High-mobility 6,13-bis(triisopropylsilylethynyl) pentacene transistors using solutionprocessed polysilsesquioxane gate dielectric layers

Yu Matsuda, Yoshio Nakahara, Daisuke Michiura, Kazuyuki Uno, Ichiro Tanaka

11th International Conference on Nano-Molecular Electronics (ICNME2014) 2014.12.18
Investigation of ultraviolet light curable polysilsesquioxane gate dielectric layers for pentacene thin film transistors

Hideto Shibao, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

11th International Conference on Nano-Molecular Electronics (ICNME2014) 2014.12.18
ポリシルセスキオキサンをゲート絶縁膜に用いた高キャリア移動度TIPS-pentaceneトランジスタ

松田悠, 中原佳夫, 道浦大祐, 宇野和行, 田中一郎

日本材料学会半導体エレクトロニクス部門委員会平成26年度第2回研究会 2014.11
ポリシルセスキオキサンをゲート絶縁膜に用いたTIPS-pentaceneトランジスタの作製

松田悠, 中原佳夫, 道浦大祐, 宇野和行, 田中一郎

第75回応用物理学会秋季学術講演会 2014.09
Growth of Zinc Oxide on Pyrolytic Graphite Sheet by Mist Chemical Vapor Deposition

Shunsuke Kake, Kazuyuki Uno, Ikuhiro Furotani, Yuichiro Yamazaki, Ichiro Tanaka

The 16th International Conference on II-VI Compounds and Related Materials (II-VI 2013) 2013.09.10
Growth of ZnO Films on n-GaN Using Photoassisted Electrodeposition

Kazuyuki Uno, Mitsuteru Sainokami, Junpei Ikegami, Ichiro Tanaka

The 40th Interenational Symposium on Compound Semiconductors (ISCS2013) 2013.05.21
Organic Field-effect Transistors Fabricated by Solution Process Using TMTSF-TCNQ Complex Crystals Grown at Various Temperatures

Takuya Nawata, Hideo Yamakado, Kazuyuki Uno, Ichiro Tanaka

The 40th Interenational Symposium on Compound Semiconductors (ISCS2013) 2013.05.20
ZnO thick film growth on GaN substrate using photo-assisted electrochemical deposition

Kazuyuki Uno, Yasuhiro Tauchi, Ichiro Tanaka

International Workshop on Nitride Semiconductors 2012 (IWN2012) 2012.10.18
Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiphene-dimer films

T. Sakai, K. Shibamoto, Y. Matsumoto, H.Osuga, K. Uno, Ichiro Tanaka

The 17th International Conference on Molecular Beam Epitaxy (MBE2012) 2012.09.24
Organic memory transistors using embedded monolayer of semiconductor colloidal nanodots as a floating gate

Kaori Kajimito, D. Matsui, Kazuyuki Uno, Ichiro Tanaka

The 2012 International Conference on Flexible and Printed Electronics (ICFPE2012) 2012.09.07
Selective growth of zinc oxide on submicron lines & spaces patterns of photoresist by electrochemical deposition

Kazuyuki Uno, Yosuke Nakatsuji, Ichiro Tanaka

The 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011) 2011.05.22
Epitaxial electrochemical-deposition of ZnO on graphite and p-GaN substrates

Kazuyuki Uno, Yoshinori Ishii, Ichiro Tanaka

The 52nd Annual Forum Electronic Materials Conference (EMC2010) 2010.06.24
Electrochemical Deposition of Zinc Oxide on Graphite Substrate and Graphite Sheet

K. Uno, Y. Ishii, H. Manabe, K. Takamatsu, I. Tanaka

The 37th International Symposium on Compound Semiconductors (ISCS2010) 2010.06.03
Pentacene Memory Transistors Using Monolayer of Semiconductgor Colloidal Nano-Dots

K. Kajimoto, T. Minami, K. Uno, I. Tanaka

The 37th International Symposium on Compound Semiconductors (ISCS2010) 2010.06.01
Memory effect of pentacene field-effect transistors with embedded monolayer of semiconductor colloidal nano-dots

Kaori Kajimoto, Kazuyuki Uno, Ichiro Tanaka

The 14th International Conference on Modulated Semiconductor Structures (MSS14) 2009.07.23
Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, I.Kamiya, H. Sakaki

The 14th International Conference on Modulated Semiconductor Structures (MSS14) 2009.07.23
Memory Effect of Organic Field-Effect Transistors with Embedded Monolayer of Semiconductor Colloidal Quantum Dots

Kaori Kajimoto, Masahumi Minami, Kazuyuki Uno, Ichiro Tanaka

The IEEE Nanotechnology Materials and Devices Conference (NMDC2008) 2008.10.21
Electrochemical-Selective Growth of Nano-Sized ZnO Crystals

Kazuyuki Uno, Tsutomu Ina, Takayuki Asaoka, Tadayuki Kanda, Yoshinori Ishii, Ichiro Tanaka

The IEEE Nanotechnology Materials and Devices Conference (NMDC2008) 2008.10.21
Current-Voltage Characteristics of GaAs Nano-Schottky Diodes Using InAs Self-Assembled Quantum Dots as Nano-Electrodes; Dependence on Doping Concentration

Ichiro Tanaka, S. Nakatani, K. Uno, I. Kamiya, H. Sakaki

The IEEE Nanotechnology Materials and Devices Conference (NMDC2008) 2008.10.20
Expansion Ratio Dependence of E2 Mode Vibration of GaN Lattices using ab initio Molecular Dynamics Calculations

Kazuyuki UNO, Takuki INOUE, Ichiro TANAKA, Toshiyuki TAKIZAWA

2008 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments (ASPE2008) 2008.10.10
Expansion ratio dependence of lattice vibration of GaN using ab initio molecular dynamics calculations

Kazuyuki Uno, Takuki Inoue, Toshiyuki Takizawa, Ichiro Tanaka

The Second International Symposium on Growth of III-Nitrides (ISGN-2) 2008.07.06
Investigation of Electric Double Layer and Crystal Shapes of Electrochemically Growtn Zinc Oxide

Kazuyuki Uno, Naoyuki Kanda, Masashi Aisu, Takayuki Asaoka, Tsutomu Ina, Ichiro Tanaka, Munenori Yamashita

The 34th International Symposium on Compound Semiconductors (ISCS2007) 2007.10.18
Resonant Tunneling of Electrons through Single Self-Assembled InAs Quantum Dot at Room Temperature Studied with Conductive AFM Tip

I. Tanaka, Y. Tada, S. Nakatani, K. Uno, M. Azuma, K. Umemura, I. Kamiya, H. Sakaki

The 34th International Symposium on Compound Semiconductors (ISCS2007) 2007.10.15
Prediction of Transition Composition Ratio of ZnO Related Alloys

Kazuyuki Uno, Megumi Nagao, Tadayuki Kanda, Ichiro Tanaka

2007 Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments 2007.10.05
Organic Field-Effect Transistors based on Benzodithiophene-Dimer Films

K. Yamaguchi, K. Nakashima, S. Takamiya, M. Minami, Y. Doge, Y. Nishoide, H. Osuga, K. Uno, I. Tanaka, C. Nakamoto

4th International Conference on Molecular and Bio-electronics(M&BE4) 2007.05.14
Conductive probe AFM investigation on monolayer films of colloidal CdSe quantum dots

Itaru Kamiya, Ichiro Tanaka, Risa Wada, Masayo Arimoto, Kazuyuki Uno, Tomohiro Hayashi, Masahiko Hara

2006 American Physical Society March Meeting 2006.03.13
Thermal Annealing Effect and Local Atomic Configurations in GaInNAsSb Alloys

Kazuyuki Uno, Masahiro Takewa, Kazuya Sakai, Ichiro Tanaka, Homan B.Yuen, Seth, R.Bank, Mark A Wistey, James S.Harris

2005 Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments (ASPE2005) 2005.10.14
Thermal Annealing Effect and Local Atomic Configurations in GaInNAs Alloys

Kazuyuki Uno, Masako Yamada, Ichiro Tanaka, Tomoya Uruga

2004 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments 2004.11.19
Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlaid quantum dot electrode

Itaru Kamiya, Ichiro Tanaka, Yoshinobu Tada, Masakzu Azuma, Kazuyuki Uno, Hiroyuki Sakaki

International Conference on Molecular Beam Epitaxy (MBE2004) 2004.08.25
Thernal Annealing Effects and Local Atomic Configurations in GaInNAs Thin Films

Kazuyuki UNO, Masako YAMADA, Toshiyuki TAKIZAWA, Ichiro TANAKA

International Conference on Molecular Beam Epitaxy (MBE2004) 2004.08.24
Current-voltage Characteristics of Single CdSe Colloidal Nano-dots Measured with a Conductive Carbon Nano-tube Tip

Ichiro TANAKA, K.Kajimoto, K.Uno, O.Ohtsuki, T.Murase, H.Asami, M.Hara, I.Kamiya

8th International Conference on Nanometer-Scale Science and Technology 2004.06.28
Thermal Annealing Effects and Local Atomic Configurations in GaInNAs Thin Films by Fluorescence X-Ray Absorption Fine Structure Spectroscopy

Kazuyuki Uno, Masako Yamada, Toshiyuki Takizawa, Ichiro Tanaka

46TH ELECTRONIC MATERIALS CONFERENCE, 2004.06.24
Current-voltage Characteristics of Single CdSe Colloidal Nanodots Measured by Conductive-tip Atomic Force Microscopy

Ichiro Tanaka, Eri Kawasaki, Osamu Ohtsuki, Kazuyuki Uno, Masahiko Hara, Harumi Asami, Tomohide Murase, Itaru Kamiya

Material Research Society 2003 2003.12.01
Thermal Annealing Effect in GaInNAs Thin Films Estimated by X-ray Absorption Fine Structure Spectroscopy

Kazuyuki Uno, Masako Yamada, Toshiyuki Takizawa, Ichiro Tanaka

2003 International Conference on Solid State Device and Materials 2003.09.17
Photoluminescence properties of AlAs/GaAs disordered superlattice with fixed GaAs layer thickness

Kazuyuki Uno, Susumu Noda, Akio Sasaki

The First International Conference on Low Dimensinal Structure & Devices 1995.08.09
Carrier Localization and Photoluminescent Thermal Quenching of AlGaAs Disordered Superlattices

Kazuyuki Uno, Susumu Noda, Akio Sasaki

Electronic Materials Conference (EMC1994) 1994.06.23
“Temperature Dependence of Photoluminescence Properties of AlAs/AlGaAs and AlGaAs/- GaAs Disordered Superlattices

Kazuyuki Uno, Kotaro Hirano, Susumu Noda, Akio Sasaki

International Symposium on Gallium Arsenide and Related Compounds 1992.09.30
Luminescence Properties of AlxGa1−xAs/AlyAl1−yAs(x > y) Disordered Superlattices

A.Sasaki, K.Uno, K.Hirano, S.Noda

Electronic Materials Conference (EMC1992) 1992.06.24
Luminescence Properties of Disordered Superlattices

Akio Sasaki, Kazuyuki Uno, Susumu Noda

International Symposium on Science and Technology of Mesoscopic Structures 1991.11.06

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Patents

成膜方法及び成膜装置

Patent no：特許第7436333号

Date registered： 2024.02.13

Date applied： 2020.09.04 （特願2020-148776 ） Publication date： 2022.03.16 （特開2022-43480 ）

Inventor(s)/Creator(s)：宇野和行、渡部武紀、橋上洋、坂爪崇寛
酸化ガリウム半導体膜及び原料溶液

Patent no：特許第7432904

Date registered： 2024.02.08

Date applied： 2019.04.12 （特願2022-179004 ） Publication date： 2022.11.08 （特開2023-15226 ）

Inventor(s)/Creator(s)：宇野和行、渡部武紀、橋上洋、松本一寿 Applicant：国立大学法人和歌山大学、信越化学工業株式会社

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特願2019-76229の分割出願
結晶性酸化物膜

Patent no：特許第7306640号

Date registered： 2023.07.03

Date applied： 2019.08.28 （特願2022-033298 ）

Inventor(s)/Creator(s)：渡部武紀、橋上　洋、坂爪崇寛、宇野和行 Applicant：国立大学法人和歌山大学、信越化学工業株式会社
金属膜形成方法

Patent no：特許第7261410号

Date registered： 2023.04.12

Date applied： 2019.09.02 （特願2019-159947 ） Publication date： 2021.03.11 （特開2021-38428 ）

Inventor(s)/Creator(s)：渡部武紀、橋上　洋、坂爪崇寛、宇野和行 Applicant：国立大学法人和歌山大学、信越化学工業株式会社
酸化ガリウム半導体膜の製造方法

Patent no：特願7179294号

Date registered： 2022.11.18

Date applied： 2019.04.12 （特願2019-76229 ） Publication date： 2020.10.22 （特開2020-174153 ）

Inventor(s)/Creator(s)：渡部武紀、橋上　洋、松本一寿、宇野和行 Applicant：信越化学工業株式会社、和歌山大学
酸化ガリウム半導体膜の製造方法

Patent no：特許第7179294号

Date registered： 2022.11.18

Date applied： 2019.04.12 （特願2019-76229 ） Publication date： 2020.10.22 （特開2020-174153 ）

Inventor(s)/Creator(s)：宇野和行、松本一寿、渡部武紀、橋上洋 Applicant：国立大学法人和歌山大学、信越化学工業株式会社
積層構造体の製造方法

Patent no：特許第7045014号

Date registered： 2022.03.23

Date applied： 2019.08.28 （特願2019-156145 ） Publication date： 2021.03.01 （特開2021-31358 ）

Inventor(s)/Creator(s)：渡部武紀、橋上　洋、坂爪崇寛、宇野和行 Applicant：国立大学法人和歌山大学、信越化学工業株式会社
酸化ガリウムの製造方法及び結晶成長装置

Patent no：特許第6793942号

Date registered： 2020.11.13

Date applied： 2016.11.01 （特願2016-213949 ） Publication date： 2018.05.10 （特開2018-70422 ）

Inventor(s)/Creator(s)：宇野和行、中村幸 Applicant：国立大学法人和歌山大学
光検出器

Date applied： 2024.02.16 （特願2024-022399 ）

Inventor(s)/Creator(s)：宇野和行 Applicant：国立大学法人和歌山大学
結晶性酸化物膜、積層構造体及び半導体装置

Date applied： 2022.03.04 （特願2022-33298 ） Publication date： 2022.06.14 （特開2022-88406 ）

Inventor(s)/Creator(s)：宇野和行、渡部武紀、橋上洋、坂爪崇寛 Applicant：国立大学法人和歌山大学、信越化学工業株式会社

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特願2019-156145の分割出願
原料溶液の製造及び成膜方法

Date applied： 2021.05.04 （特願2021-078230 ） Public disclosure date： 2022.11.10 （ WO2022/234750 ）

Inventor(s)/Creator(s)：渡部武紀、橋上　洋、坂爪崇寛、宇野和行、太田茉莉香 Applicant：国立大学法人和歌山大学、信越化学工業株式会社

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Research Exchange

International Program Committee of International Workshop on Gallium Oxide and Related Materials 2024

2023.09

-

2024.06

　International research exchanges
2022年度第1回日本材料学会半導体エレクトロニクス部門研究会

2022.08
和歌山大学・和歌山化学工業協会会員交流会

2021.12
和歌山大学・和歌山化学工業協会会員交流会

2021.11
P型酸化ガリウム作製方法の確立

2018.11

-

Now

　Joint research
科研費説明会

2014.10
科研費説明会

2013.09
第59回応用物理学関係連合講演会

2012.03
第72回応用物理学会学術講演会

2011.08

-

2011.09
The 30th Electronic Materials Symposium (EMS30)

2011.06

-

2011.07
The 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)

2011.05

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KAKENHI

α型酸化ガリウムの特異な緩和機構と光導電特性の研究

2024.04

-

2027.03

Grant-in-Aid for Scientific Research(C) Principal investigator
高品質なα型酸化ガリウム系薄膜による量子ヘテロ構造物性の研究

2018.04

-

2021.03

Grant-in-Aid for Scientific Research(C) Principal investigator
窒化物混晶半導体の発光機構の解明

2006.04

-

2008.03

Grant-in-Aid for Scientific Research(C) Co-investigator
超格子混晶半導体の光学特性の研究

2004.04

-

2006.03

Grant-in-Aid for Scientific Research(C) Co-investigator

Public Funding (other government agencies of their auxiliary organs, local governments, etc.)

全光通信のための半導体材料の研究

2002.04

-

2003.03

Principal investigator

Instructor for open lecture, peer review for academic journal, media appearances, etc.

査読6件

2022.04

-

2023.03

日本材料学会，Elsevier, 応用物理学会

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学術雑誌等の編集委員・査読・審査員等

学術誌の査読
査読11件

2021.04

-

2022.03

日本材料学会，Elsevier, 応用物理学会

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学術雑誌等の編集委員・査読・審査員等

学術誌の査読
査読3件

2020.04

-

2021.03

日本材料学会，Elsevier, 応用物理学会

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学術雑誌等の編集委員・査読・審査員等

学術誌の査読3件
査読4件

2019.04

-

2020.03

日本材料学会，Springer, Elsevier

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学術雑誌等の編集委員・査読・審査員等

学術誌の査読4件
査読1件

2018.04

-

2019.03

Springer

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学術雑誌等の編集委員・査読・審査員等

学術誌の査読1件
査読4件

2017.04

-

2018.03

応用物理学会，日本材料学会，MDPI

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学術雑誌等の編集委員・査読・審査員等

学術雑誌の査読4件
日高高校特別講義

2017.04

その他

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小・中・高校生を対象とした学部体験入学・出張講座等

日高高校の学生を対象に「電気エネルギーの_x000B_発生と消費の昔と今」と題して電気エネルギーの発生と利用についての講義を行った。,日付:11月1日
Editor, Special issue on Compound Semiconductors

2016.05

-

2017.03

Physica Status Solidi a, b, Vol. 214, Issue 3, Wiley

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学術雑誌等の編集委員・査読・審査員等

Editor of a Special Issue
査読5件

2016.04

-

2017.03

応用物理学会，日本材料学会，照明学会

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学術雑誌等の編集委員・査読・審査員等

学術雑誌の査読5件
NS(ナチュラルサイエンス)I特別講義

2016.01

その他

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小・中・高校生を対象とした学部体験入学・出張講座等

日高高校の高校1年生の生徒約80名を対象に大学における理工系の学びについて実演を伴う講義を行った。,日付:26
特別号編集委員

2013.09

-

2014.01

Japanese Journal of Applied Physics, 応用物理学会

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学術雑誌等の編集委員・査読・審査員等

特別号編集委員

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Course for renewal of teaching license, teacher-librarian course, etc. (contracted business）

2021 【選択】現代の産業を支える材料の科学と歴史(教員免許状更新講習)
2019 さまざまな材料からながめる電気と電子の技術
2018 さまざまな材料からながめる電気と電子の技術
2017 さまざまな材料からながめる電気と電子の技術

Committee member history in academic associations, government agencies, municipalities, etc.

Steering committee member of the 5th International Workshop on Gallium Oxide and Related Materials

2023.09.01

-

2024.06.01

The 5th International Workshop on Gallium Oxide and Related Materials

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酸化ガリウム，国際会議

2023年5月に実施される酸化ガリウム国際ワークショップの論文委員として、招待講演者の推薦、論文の査読を行った。
査読委員

2023.04.01

-

2024.03.31

日本材料学会

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日本材料学会、「材料」、査読

日本材料学会が発行している学術誌「材料」（和文誌）の査読を行う。
半導体エレクトロニクス部門委員会幹事

2021.04.01

-

Now

日本材料学会

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学会運営

半導体エレクトロニクス部門の運営
Steering committee member of the 4th International Workshop on Gallium Oxide and Related Materials

2019.09

-

2023.03

The 4th International Workshop on Gallium Oxide and Related Materials

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酸化ガリウム，国際会議

2022年10月に予定されている酸化ガリウム国際ワークショップを実施するための実行委員として活動している。
プログラム委員

2018.04

-

2020.03

The 9th Asia-Pacific Workshop on Widegap Semiconductors

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学協会、政府、自治体等の公的委員

国際会議の運営,任期:2018年11月～2020年3月
副委員長

2017.04

-

2020.03

Compound Semiconductor Week 2019

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学協会、政府、自治体等の公的委員

日米欧で行われる「化合物半導体国際会議」の実施。投稿件数500件、参加人数800名程度の国際会議。2019年5月19日-5月23日に金沢にて実施予定。
プログラム委員

2016.10

-

2019.03

2018年窒化物半導体国際ワークショップ (International Workshop on Nitride Semiconductors, 略称: IWN2018)

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学協会、政府、自治体等の公的委員

窒化物半導体に関する研究発表および議論を行う,任期:2019年3月31日
プログラム委員

2016.09

-

2019.03

第19回有機金属気相エピタキシャル成長国際会議（19th International Conference of Metalorganic Vapor Phase Epitaxy 略称：ICMOVPE-XIX）

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学協会、政府、自治体等の公的委員

半導体薄膜形成技術の一つである有機金属気相エピタキシャル成長法および関連分野に関する研究発表および議論を行う。,任期:2019年3月31日まで
実行委員

2015.11

-

2018.10

The 29th International Conference on Defects in Semiconductors (ICDS29)

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学協会、政府、自治体等の公的委員

半導体の欠陥に関する国際会議で、2017年に島根県のくにびきメッセにて開催される。,任期:3年
情報セキュリティ委員

2015.04

-

Now

Electronic Materials Symposium

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学会運営

ホームページおよび論文投稿システムの管理
Vice chair of steering committee of CSW

2015.01

-

2017.03

Compound Semiconductor Week 2016

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学協会、政府、自治体等の公的委員

2016年化合物半導体国際会議
シンポジウム編集委員

2014.10

-

2015.03

応用物理学会合同セッションK企画シンポジウム「酸化物半導体における価電子メタモルフォロジ」

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学協会、政府、自治体等の公的委員

シンポジウム企画
Committee member

2014.07

-

2017.03

15th International Symposium on the Science and Technology of Lighting

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学協会、政府、自治体等の公的委員

第15回照明科学と技術に関する国際シンポジウム
Secretary of Program Committee

2014.06

-

2016.03

The 6th International Symposium on Growth of III-Nitrides

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学協会、政府、自治体等の公的委員

第6回III族窒化物半導体結晶成長シンポジウム
Steering Committee Chair

2014.05

-

2016.03

The 1st International Workshop on Gallium Oxide and Related Materials

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学協会、政府、自治体等の公的委員

第1回酸化ガリウム関連材料国際ワークショップ
企画代表

2013.10

-

2014.03

応用物理学会

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学協会、政府、自治体等の公的委員

応用物理学会合同セッションK企画シンポジウム「ワイドバンドギャップ酸化物半導体による新しい機能の創成」
プログラム委員会委員

2013.04

-

2015.03

社団法人応用物理学会

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学協会、政府、自治体等の公的委員

応用物理学に関する学術団体,任期:2010.10～2012.3
Symposium E (Functional Oxide Thin Films and Heterostructures for Innovative Devices) Co-Organizer

2013.04

-

2013.10

応用物理学会

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学協会、政府、自治体等の公的委員

JSAP-MRS Joint Symposia
半導体エレクトロニクス部門委員会委員

2012.09

-

2021.03.31

日本材料学会

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学協会、政府、自治体等の公的委員

日本材料学会の中に組織されている半導体エレクトロニクス部門委員会の研究会に関する広報等を行っている。
Vice Chair of Program Committee (論文副委員長)

2012.09

-

2014.08

The 16th International Conference on II-VI Compounds (IC II-VI 2013)

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学協会、政府、自治体等の公的委員

II-VI族化合物半導体に関する国際会議
Organizer of JSAP-MRS Joint Session (MRS2013F-E)

2012.09

-

2013.10

社団法人応用物理学会

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学協会、政府、自治体等の公的委員

応用物理学に関する学術団体
総務委員

2012.04

-

2014.05

International Symposium on Compound Semiconductors 2013

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学協会、政府、自治体等の公的委員

化合物半導体に関する国際会議
プログラム委員会委員(合同セッションK代表世話人)

2010.10

-

2012.03

社団法人応用物理学会

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学協会、政府、自治体等の公的委員

応用物理学に関する学術団体,任期:2010.10～2012.3
Secretary of Program Committee

2010.05

-

2013.06

International Workshop on Nitride Semiconductors 2012 (IWN2012, 窒化物国際ワークショップ2012)

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学協会、政府、自治体等の公的委員

窒化物半導体に関する国際会議,任期:2010.5～2013.6
member of program committee (論文委員)

2010.04

-

2011.10

Asia-Pacific Workshop on Widegap Semiconductors 2011 (APWS-2011, 第5回アジアパシフィックワイドギャップ半導体国際ワークショップ)

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学協会、政府、自治体等の公的委員

日本・中国・韓国・台湾の、窒化ガリウムなど可視潤オ紫外域にバンドギャップをもつ半導体材料の研究者が会する会合。共催は日本応用物理学会および日本結晶成長学会、協賛は日本学術振興会である。日本学術振興会第161委員会のメンバーが中心になって行われる。,任期:2010.4～2011.10
vice-chair of steering committee (実行副委員長)

2008.03

-

2011.09

The 35th International Symposium on Compound Semiconductor 2010 (第35回化合物半導体国際会議2010)

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学協会、政府、自治体等の公的委員

学協会、政府、自治体等の公的委員,任期:2008.3～2011.9
Member of Executive Committee

2007.09

-

2009.09

The IEEE Nanotechnology Maeterials and Device Conference 2008 (IEEE NMDC2008)

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学協会、政府、自治体等の公的委員

ナノ材料に関する国際会議,任期:2007.9～2009.9
Secretry of Program Committee (プログラム委員会総務担当)

2007.04

-

2008.09

The 2nd International Symposium on Growth of III-Nitrides (第2回　窒化物半導体結晶成長国際会議)

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学協会、政府、自治体等の公的委員

学協会、政府、自治体等の公的委員,任期:2007.4～2008.9
Secretry of Program Committee (プログラム委員会総務担当)

2006.04

-

2009.06

The 34th International Symposium on Compound Semiconductor 2007 (第34回化合物半導体国際会議2007)

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学協会、政府、自治体等の公的委員

学協会、政府、自治体等の公的委員,任期:2006.4～2009.6
実行委員

2005.01

-

2006.10

International Workshop on Nitride Semiconductors 2006 (窒化物半導体国際ワークショップ)

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学協会、政府、自治体等の公的委員

学協会、政府、自治体等の公的委員,任期:2005.1～2006.10

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Other Social Activities

深紫外線を高感度に検出するα型酸化ガリウム光半導体デバイス

2023.11.22

関西イノベーションイニシアチブ

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ベンチャーキャピタル、酸化ガリウム

VCを対象として酸化ガリウムについての技術説明を行った。
技術相談

2023.10.24

三河電機、エピテックス

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酸化ガリウム

技術相談
ソーラーブラインド光の高感度検出による水中での光通信や物体検知

2023.10.03

MOBIO

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展示会

酸化ガリウムについての研究紹介
大学見本市2023～イノベーション・ジャパン～ C-51

2023.08.23

-

2023.08.24

国立研究開発法人科学技術振興機構

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展示会

特許保有者による研究内容紹介
ミストCVD法によるGa2O3膜成膜の件

2018.04

-

2019.03

その他

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産業界、行政諸機関等と行った共同研究、新技術創出、コンサルティング等

酸化ガリウム薄膜の成長,実施者:宇野和行