Updated on 2024/03/03

写真a

 
UNO Kazuyuki
 
Name of department
Faculty of Systems Engineering, Materials Engineering
Job title
Associate Professor
Mail Address
E-mail address
External link

Education

  • 1990
    -
    1995

    Kyoto University   工学研究科   Department of electrical engineering  

  • 1986
    -
    1990

    Kyoto University   Faculty of Engineering   電気工学科  

Degree

  • Doctor of Engineering, Kyoto University   1997

Academic & Professional Experience

  • 2008.04
    -
    Now

    Wakayama University   Faculty of Systems Engineering   准教授

  • 2005.04
    -
    2008.03

    Wakayama University   Faculty of Systems Engineering   Associate Professoor

  • 2002.04
    -
    2005.03

    Wakayama University   Faculty of Systems Engineering   Lecturer

  • 1997.04
    -
    2002.03

    Wakayama University   Faculty of Systems Engineering   assistant professor

  • 1995.09
    -
    1997.03

    New Energy and Industrial Technology Development Organization

  • 1995.04
    -
    1995.09

    Kyoto University   Faculty of Engineering   教務補佐員

▼display all

Association Memberships

  • 2012.04
    -
    Now

    日本材料学会

  • 2008
    -
    Now

    The Japan Sciety of Vacuum and Surface Science

  • 1998.02
    -
    Now

    The Japan Society of Applied Physics

Research Areas

  • Nanotechnology/Materials / Crystal engineering / Oxide Semiconductors, Mist Chemical Vapor Deposition, Gallium Oxide

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering

Classes (including Experimental Classes, Seminars, Graduation Thesis Guidance, Graduation Research, and Topical Research)

  • 2022   Progress of materials science and engineering   Liberal Arts and Sciences Subjects

  • 2022   Physics Experiments B   Specialized Subjects

  • 2022   Physics Experiments A   Specialized Subjects

  • 2022   Practice in Physics   Specialized Subjects

  • 2022   Semiconductor DevicesⅡ   Specialized Subjects

  • 2022   Semiconductor DevicesⅠ   Specialized Subjects

  • 2022   Electromagnetics Ⅰ   Specialized Subjects

  • 2022   Graduation Research   Specialized Subjects

  • 2022   Graduation Research   Specialized Subjects

  • 2022   Graduation Research   Specialized Subjects

  • 2022   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2022   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2022   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2022   Numerical Analysis II   Specialized Subjects

  • 2022   Numerical Analysis I   Specialized Subjects

  • 2022   Experiments in Materials Engineering C   Specialized Subjects

  • 2022   Experiments of Materials Engineering B   Specialized Subjects

  • 2022   Experiments of Materials Engineering A   Specialized Subjects

  • 2022   Materials Engineering Seninar   Specialized Subjects

  • 2022   Disaster Information Engineering   Specialized Subjects

  • 2022   Introduction to Current Systems Engineering A   Specialized Subjects

  • 2022   Scientific and Technical English B   Specialized Subjects

  • 2022   Nanotechnologies Ⅱ   Specialized Subjects

  • 2022   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2021   Graduation Research   Specialized Subjects

  • 2021   Numerical Analysis II   Specialized Subjects

  • 2021   Practice in Physics   Specialized Subjects

  • 2021   Semiconductor DevicesⅡ   Specialized Subjects

  • 2021   Numerical Analysis I   Specialized Subjects

  • 2021   Experiments in Materials Engineering C   Specialized Subjects

  • 2021   Materials Engineering Seninar   Specialized Subjects

  • 2021   Physics Experiments B   Specialized Subjects

  • 2021   Semiconductor DevicesⅠ   Specialized Subjects

  • 2021   Electromagnetics Ⅰ   Specialized Subjects

  • 2021   Experiments of Materials Engineering B   Specialized Subjects

  • 2021   Physics Experiments A   Specialized Subjects

  • 2021   Graduation Research   Specialized Subjects

  • 2021   Experiments of Materials Engineering A   Specialized Subjects

  • 2021   Disaster Information Engineering   Specialized Subjects

  • 2021   Introduction to Current Systems Engineering A   Specialized Subjects

  • 2021   Scientific and Technical English B   Specialized Subjects

  • 2021   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2021   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2021   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2021   Nanotechnologies Ⅱ   Specialized Subjects

  • 2021   Progress of materials science and engineering   Liberal Arts and Sciences Subjects

  • 2020   Exercises in Majors A   Specialized Subjects

  • 2020   Introduction to Majors 1   Specialized Subjects

  • 2020   Progress of materials science and engineering   Liberal Arts and Sciences Subjects

  • 2020   Graduation Research   Specialized Subjects

  • 2020   Graduation Research   Specialized Subjects

  • 2020   Introduction to Current Systems Engineering A   Specialized Subjects

  • 2020   Electromagnetics Ⅰ   Specialized Subjects

  • 2020   Numerical Analysis II   Specialized Subjects

  • 2020   Numerical Analysis I   Specialized Subjects

  • 2020   Experiments of Materials Engineering B   Specialized Subjects

  • 2020   Experiments of Materials Engineering A   Specialized Subjects

  • 2020   Materials Engineering Seninar   Specialized Subjects

  • 2020   Experiments in Materials Engineering C   Specialized Subjects

  • 2020   Solid State Physics B   Specialized Subjects

  • 2020   Solid State Physics A   Specialized Subjects

  • 2020   Physics Experiments B   Specialized Subjects

  • 2020   Physics Experiments A   Specialized Subjects

  • 2020   Disaster Information Engineering   Specialized Subjects

  • 2020   Scientific and Technical English B   Specialized Subjects

  • 2020   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2020   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2020   Nanotechnologies Ⅱ   Specialized Subjects

  • 2020   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2020   Practice in Physics   Specialized Subjects

  • 2020   Semiconductor Devices   Specialized Subjects

  • 2019   Practices in Numerical Analysis   Specialized Subjects

  • 2019   Disaster Information Engineering   Specialized Subjects

  • 2019   Introduction to Current Systems EngineeringⅠ   Specialized Subjects

  • 2019   Scientific and Technical English B   Specialized Subjects

  • 2019   Experiments in Material Science and Chemistry   Specialized Subjects

  • 2019   Experiments in Applied Physics   Specialized Subjects

  • 2019   Advanced Lectures in Applied Physics   Specialized Subjects

  • 2019   Solid State Physics   Specialized Subjects

  • 2019   Electromagnetics for Materials Ⅰ   Specialized Subjects

  • 2019   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2019   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2019   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2019   Nanotechnologies Ⅱ   Specialized Subjects

  • 2019   Nanotechnologies Ⅰ   Specialized Subjects

  • 2019   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2019   Practice in Physics   Specialized Subjects

  • 2019   Semiconductor Devices   Specialized Subjects

  • 2019   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2019   Experiments in Physics   Specialized Subjects

  • 2018   Solid State Physics   Specialized Subjects

  • 2018   Introduction to Majors 2   Specialized Subjects

  • 2018   Introduction to Majors 1   Specialized Subjects

  • 2018   Practice in Physics   Specialized Subjects

  • 2018   Graduation Research   Specialized Subjects

  • 2018   Disaster Information Engineering   Specialized Subjects

  • 2018   Introduction to Current Systems EngineeringⅠ   Specialized Subjects

  • 2018   Scientific and Technical English B   Specialized Subjects

  • 2018   Experiments in Material Science and Chemistry   Specialized Subjects

  • 2018   Experiments in Applied Physics   Specialized Subjects

  • 2018   Advanced Lectures in Applied Physics   Specialized Subjects

  • 2018   Electromagnetics for Materials Ⅰ   Specialized Subjects

  • 2018   Introduction to Majors 2   Specialized Subjects

  • 2018   Introduction to Majors 1   Specialized Subjects

  • 2018   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2018   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2018   Nanotechnologies Ⅱ   Specialized Subjects

  • 2018   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2018   Semiconductor Devices   Specialized Subjects

  • 2018   Experiments in Physics   Specialized Subjects

  • 2017   NA   Liberal Arts and Sciences Subjects

  • 2017   Disaster Information Engineering   Specialized Subjects

  • 2017   Graduation Research   Specialized Subjects

  • 2017   Voluntary Study on Systems Engineering Ⅳ   Specialized Subjects

  • 2017   Experiments in Material Science and Chemistry   Specialized Subjects

  • 2017   Solid State Physics   Specialized Subjects

  • 2017   Electromagnetics for Materials Ⅰ   Specialized Subjects

  • 2017   Introduction to Majors 2   Specialized Subjects

  • 2017   Introduction to Majors 2   Specialized Subjects

  • 2017   Introduction to Majors 1   Specialized Subjects

  • 2017   Introduction to Majors 1   Specialized Subjects

  • 2017   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2017   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2017   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2017   Nanotechnologies Ⅱ   Specialized Subjects

  • 2017   Nanotechnologies Ⅰ   Specialized Subjects

  • 2017   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2017   Practice in Physics   Specialized Subjects

  • 2017   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2017   Experiments in Physics   Specialized Subjects

  • 2016   Nanotechnologies Ⅱ   Specialized Subjects

  • 2016   Nanotechnologies Ⅰ   Specialized Subjects

  • 2016   Introduction to Majors 1   Specialized Subjects

  • 2016   Introduction to Majors 1   Specialized Subjects

  • 2016   Semiconductor Devices   Specialized Subjects

  • 2016   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2016   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2016   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2016   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2016   Experiments in Physics   Specialized Subjects

  • 2016   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2016   Practice in Physics   Specialized Subjects

  • 2016   Voluntary Study on Systems Engineering Ⅳ   Specialized Subjects

  • 2016   Solid State Physics   Specialized Subjects

  • 2016   Electromagnetics for Materials Ⅰ   Specialized Subjects

  • 2016   Introductory Seminar in Systems Engineering   Specialized Subjects

  • 2015   Semiconductor Devices   Specialized Subjects

  • 2015   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2015   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2015   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2015   Fundamental PhysicsⅢ   Specialized Subjects

  • 2015   Nanotechnologies Ⅱ   Specialized Subjects

  • 2015   Practice in Physics   Specialized Subjects

  • 2015   Electrical and Electronic Materials   Specialized Subjects

  • 2015   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2015   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2015   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2015   Nanotechnologies Ⅰ   Specialized Subjects

  • 2014   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2014   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2014   Fundamental PhysicsⅢ   Specialized Subjects

  • 2014   Fundamental PhysicsⅡ   Specialized Subjects

  • 2014   Fundamental PhysicsⅠ   Specialized Subjects

  • 2014   Electrical and Electronic Materials   Specialized Subjects

  • 2014   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2014   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2014   Nanotechnologies Ⅱ   Specialized Subjects

  • 2014   Nanotechnologies Ⅰ   Specialized Subjects

  • 2014   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2014   Semiconductor Devices   Specialized Subjects

  • 2014   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2014   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2014   Introductory Seminar   Liberal Arts and Sciences Subjects

  • 2013   Seminar in Material Science and Chemistry ⅡA   Specialized Subjects

  • 2013   Seminar in Material Science and Chemistry ⅠA   Specialized Subjects

  • 2013   Fundamental PhysicsⅢ   Specialized Subjects

  • 2013   Fundamental PhysicsⅡ   Specialized Subjects

  • 2013   Fundamental PhysicsⅠ   Specialized Subjects

  • 2013   Electrical and Electronic Materials   Specialized Subjects

  • 2013   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2013   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2013   Nanotechnologies Ⅱ   Specialized Subjects

  • 2013   Nanotechnologies Ⅰ   Specialized Subjects

  • 2013   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2013   Semiconductor Devices   Specialized Subjects

  • 2013   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2013   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2013   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2012   Semiconductor Devices   Specialized Subjects

  • 2012   Introduction to Material Science andChemistry   Specialized Subjects

  • 2012   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2012   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2012   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2012   Fundamental PhysicsⅢ   Specialized Subjects

  • 2012   Fundamental PhysicsⅠ   Specialized Subjects

  • 2012   Introductory Seminar   Liberal Arts and Sciences Subjects

  • 2012   Nanotechnologies Ⅱ   Specialized Subjects

  • 2012   Electrical and Electronic Materials   Specialized Subjects

  • 2012   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2012   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2012   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2012   Fundamental PhysicsⅡ   Specialized Subjects

  • 2012   Nanotechnologies Ⅰ   Specialized Subjects

  • 2011   Experiments in Material Science andChemistry C   Specialized Subjects

  • 2011   Experiments in Material Science andChemistry B   Specialized Subjects

  • 2011   Experiments in Material Science andChemistry A   Specialized Subjects

  • 2011   Practice in Physics   Specialized Subjects

  • 2011   Advanced Material Science andChemistry Ⅱ   Specialized Subjects

  • 2011   Advanced Material Science andChemistry Ⅰ   Specialized Subjects

  • 2011   Nanotechnologies Ⅱ   Specialized Subjects

  • 2011   Nanotechnologies Ⅰ   Specialized Subjects

  • 2011   Fundamental PhysicsⅢ   Specialized Subjects

  • 2011   Electrical and Electronic Materials   Specialized Subjects

  • 2011   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2010   NA   Specialized Subjects

  • 2010   Electrical and Electronic Materials   Specialized Subjects

  • 2010   Introductory Seminar   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   Advanced Material Technologiesin Environments   Liberal Arts and Sciences Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   NA   Specialized Subjects

  • 2010   Graduation Research   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   Electrical and Electronic Materials   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   NA   Specialized Subjects

  • 2009   Graduation Research   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   Electrical and Electronic Materials   Specialized Subjects

  • 2008   NA   Specialized Subjects

  • 2008   Graduation Research   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   Electrical and Electronic Materials   Specialized Subjects

  • 2007   Introduction to Material Science andChemistry   Specialized Subjects

  • 2007   NA   Specialized Subjects

  • 2007   Graduation Research   Specialized Subjects

▼display all

Satellite Courses

  • 2019   NA   Liberal Arts and Sciences Subjects

  • 2018   NA   Liberal Arts and Sciences Subjects

  • 2017   NA   Liberal Arts and Sciences Subjects

  • 2014   Introductory Course of Science for Everyone   Liberal Arts and Sciences Subjects

Independent study

  • 2016   Arduinoを用いたプログラム,電子回路設計

  • 2008   物理学の基礎を視覚的に理解する演習

Classes

  • 2022   Systems Engineering Global Seminar Ⅱ   Doctoral Course

  • 2022   Systems Engineering Global Seminar Ⅰ   Doctoral Course

  • 2022   Systems Engineering Advanced Research   Doctoral Course

  • 2022   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2022   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2022   Systems Engineering Project SeminarⅡB   Master's Course

  • 2022   Systems Engineering Project SeminarⅡA   Master's Course

  • 2022   Systems Engineering Project SeminarⅠB   Master's Course

  • 2022   Systems Engineering Project SeminarⅠA   Master's Course

  • 2022   Semiconductor Device Physics and Engineering   Master's Course

  • 2022   Systems Engineering SeminarⅡB   Master's Course

  • 2022   Systems Engineering SeminarⅡA   Master's Course

  • 2022   Systems Engineering SeminarⅠB   Master's Course

  • 2022   Systems Engineering SeminarⅠA   Master's Course

  • 2021   Systems Engineering Global Seminar Ⅰ   Doctoral Course

  • 2021   Systems Engineering Advanced Research   Doctoral Course

  • 2021   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2021   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2021   Systems Engineering Project SeminarⅡB   Master's Course

  • 2021   Systems Engineering Project SeminarⅡA   Master's Course

  • 2021   Systems Engineering Project SeminarⅠB   Master's Course

  • 2021   Systems Engineering Project SeminarⅠA   Master's Course

  • 2021   Semiconductor Device Physics and Engineering   Master's Course

  • 2021   Systems Engineering SeminarⅡB   Master's Course

  • 2021   Systems Engineering SeminarⅡA   Master's Course

  • 2021   Systems Engineering SeminarⅠB   Master's Course

  • 2021   Systems Engineering SeminarⅠA   Master's Course

  • 2021   Systems Engineering Global Seminar Ⅱ   Doctoral Course

  • 2020   Systems Engineering Global Seminar Ⅱ   Doctoral Course

  • 2020   Systems Engineering Global Seminar Ⅰ   Doctoral Course

  • 2020   Systems Engineering Advanced Research   Doctoral Course

  • 2020   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2020   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2020   Systems Engineering Project SeminarⅡB   Master's Course

  • 2020   Systems Engineering Project SeminarⅡA   Master's Course

  • 2020   Systems Engineering Project SeminarⅠB   Master's Course

  • 2020   Systems Engineering Project SeminarⅠA   Master's Course

  • 2020   Semiconductor Device Physics and Engineering   Master's Course

  • 2020   Systems Engineering SeminarⅡB   Master's Course

  • 2020   Systems Engineering SeminarⅡA   Master's Course

  • 2020   Systems Engineering SeminarⅠB   Master's Course

  • 2020   Systems Engineering SeminarⅠA   Master's Course

  • 2019   Compound Semiconductors Physics and Engineering   Master's Course

  • 2019   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2019   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2019   Systems Engineering Advanced Research   Doctoral Course

  • 2019   Systems Engineering Advanced Research   Doctoral Course

  • 2019   Systems Engineering SeminarⅡB   Master's Course

  • 2019   Systems Engineering SeminarⅡA   Master's Course

  • 2019   Systems Engineering SeminarⅠB   Master's Course

  • 2019   Systems Engineering SeminarⅠA   Master's Course

  • 2019   Systems Engineering Project SeminarⅡB   Master's Course

  • 2019   Systems Engineering Project SeminarⅡA   Master's Course

  • 2019   Systems Engineering Project SeminarⅠB   Master's Course

  • 2019   Systems Engineering Project SeminarⅠA   Master's Course

  • 2018   Systems Engineering Advanced Research   Doctoral Course

  • 2018   Systems Engineering Advanced Research   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2018   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2018   Systems Engineering Project SeminarⅡB   Master's Course

  • 2018   Systems Engineering Project SeminarⅡA   Master's Course

  • 2018   Systems Engineering Project SeminarⅠB   Master's Course

  • 2018   Systems Engineering Project SeminarⅠA   Master's Course

  • 2018   Systems Engineering SeminarⅡB   Master's Course

  • 2018   Systems Engineering SeminarⅡA   Master's Course

  • 2018   Systems Engineering SeminarⅠB   Master's Course

  • 2018   Systems Engineering SeminarⅠA   Master's Course

  • 2018   Compound Semiconductors Physics and Engineering   Master's Course

  • 2018   Lecture for carrier up in nanotechnology area   Master's Course

  • 2017   Compound Semiconductors Physics and Engineering   Master's Course

  • 2017   Systems Engineering Advanced Research   Doctoral Course

  • 2017   Systems Engineering Advanced Research   Doctoral Course

  • 2017   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2017   Systems Engineering Advanced Seminar Ⅰ   Doctoral Course

  • 2017   Systems Engineering Project SeminarⅡB   Master's Course

  • 2017   Systems Engineering Project SeminarⅡA   Master's Course

  • 2017   Systems Engineering Project SeminarⅠB   Master's Course

  • 2017   Systems Engineering Project SeminarⅠA   Master's Course

  • 2017   Systems Engineering SeminarⅡB   Master's Course

  • 2017   Systems Engineering SeminarⅡA   Master's Course

  • 2017   Systems Engineering SeminarⅠB   Master's Course

  • 2017   Systems Engineering SeminarⅠA   Master's Course

  • 2016   Systems Engineering Advanced Research   Doctoral Course

  • 2016   Systems Engineering Advanced Research   Doctoral Course

  • 2016   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2016   Systems Engineering Advanced Seminar Ⅱ   Doctoral Course

  • 2016   Systems Engineering Project SeminarⅡB   Master's Course

  • 2016   Systems Engineering Project SeminarⅡA   Master's Course

  • 2016   Systems Engineering Project SeminarⅠB   Master's Course

  • 2016   Systems Engineering Project SeminarⅠA   Master's Course

  • 2016   Systems Engineering SeminarⅡB   Master's Course

  • 2016   Systems Engineering SeminarⅡA   Master's Course

  • 2016   Systems Engineering SeminarⅠB   Master's Course

  • 2016   Systems Engineering SeminarⅠA   Master's Course

  • 2016   Nanomaterials Engineering   Master's Course

  • 2015   Systems Engineering Advanced Seminar Ⅱ  

  • 2015   Systems Engineering Advanced Seminar Ⅰ  

  • 2015   Systems Engineering Advanced Research  

  • 2015   Systems Engineering SeminarⅡA  

  • 2015   Systems Engineering SeminarⅠA  

  • 2015   Systems Engineering Project SeminarⅡA  

  • 2015   Systems Engineering Project SeminarⅠA  

  • 2015   Nanomaterials Engineering  

  • 2015   Systems Engineering Advanced Seminar Ⅱ  

  • 2015   Systems Engineering Advanced Seminar Ⅰ  

  • 2015   Systems Engineering Advanced Research  

  • 2015   Systems Engineering SeminarⅡB  

  • 2015   Systems Engineering SeminarⅠB  

  • 2015   Systems Engineering Project SeminarⅡB  

  • 2015   Systems Engineering Project SeminarⅠB  

  • 2014   Systems Engineering Global Seminar Ⅰ  

  • 2014   Systems Engineering Global Seminar Ⅰ  

  • 2014   Systems Engineering Advanced Research  

  • 2014   Systems Engineering Advanced Research  

  • 2014   Systems Engineering Advanced Seminar Ⅱ  

  • 2014   Systems Engineering Advanced Seminar Ⅱ  

  • 2014   Systems Engineering Advanced Seminar Ⅰ  

  • 2014   Systems Engineering Advanced Seminar Ⅰ  

  • 2014   Systems Engineering Project SeminarⅡB  

  • 2014   Systems Engineering Project SeminarⅡA  

  • 2014   Systems Engineering Project SeminarⅠB  

  • 2014   Systems Engineering Project SeminarⅠA  

  • 2014   Nanomaterials Engineering  

  • 2014   Systems Engineering SeminarⅡB  

  • 2014   Systems Engineering SeminarⅡA  

  • 2014   Systems Engineering SeminarⅠB  

  • 2014   Systems Engineering SeminarⅠA  

  • 2013   Systems Engineering Advanced Research  

  • 2013   Systems Engineering Advanced Research  

  • 2013   Systems Engineering Advanced Seminar Ⅱ  

  • 2013   Systems Engineering Advanced Seminar Ⅱ  

  • 2013   Systems Engineering Advanced Seminar Ⅰ  

  • 2013   Systems Engineering Advanced Seminar Ⅰ  

  • 2013   Systems Engineering Project SeminarⅡB  

  • 2013   Systems Engineering Project SeminarⅡA  

  • 2013   Systems Engineering Project SeminarⅠB  

  • 2013   Systems Engineering Project SeminarⅠA  

  • 2013   Nanomaterials Engineering  

  • 2013   Systems Engineering SeminarⅡB  

  • 2013   Systems Engineering SeminarⅡA  

  • 2013   Systems Engineering SeminarⅠB  

  • 2013   Systems Engineering SeminarⅠA  

  • 2012   Systems Engineering Advanced Seminar Ⅱ  

  • 2012   Systems Engineering Advanced Seminar Ⅰ  

  • 2012   Systems Engineering Advanced Research  

  • 2012   Systems Engineering SeminarⅡA  

  • 2012   Systems Engineering SeminarⅠA  

  • 2012   Systems Engineering Project SeminarⅡA  

  • 2012   Systems Engineering Project SeminarⅠA  

  • 2012   Nanomaterials Engineering  

  • 2012   Systems Engineering Advanced Seminar Ⅱ  

  • 2012   Systems Engineering Advanced Seminar Ⅰ  

  • 2012   Systems Engineering Advanced Research  

  • 2012   Systems Engineering SeminarⅡB  

  • 2012   Systems Engineering SeminarⅠB  

  • 2012   Systems Engineering Project SeminarⅡB  

  • 2012   Systems Engineering Project SeminarⅠB  

  • 2011   Systems Engineering Project SeminarⅡB  

  • 2011   Systems Engineering Project SeminarⅡA  

  • 2011   Systems Engineering Project SeminarⅠB  

  • 2011   Systems Engineering Project SeminarⅠA  

  • 2011   Systems Engineering Advanced Research  

  • 2011   Systems Engineering Advanced Research  

  • 2011   NA  

  • 2011   NA  

  • 2011   Systems Engineering Advanced Seminar Ⅱ  

  • 2011   Systems Engineering Advanced Seminar Ⅱ  

  • 2011   Systems Engineering Advanced Seminar Ⅰ  

  • 2011   Systems Engineering Advanced Seminar Ⅰ  

  • 2011   Nanomaterials Engineering  

  • 2010   NA   Master's Course

  • 2010   NA   Master's Course

  • 2010   NA   Master's Course

  • 2010   NA   Master's Course

  • 2010   NA   Master's Course

  • 2010   NA   Master's Course

  • 2010   NA   Master's Course

  • 2010   NA   Master's Course

  • 2010   Nanomaterials Engineering   Master's Course

  • 2009   Device Process Engineering   Master's Course

  • 2009   NA   Master's Course

  • 2009   NA   Master's Course

  • 2009   NA   Master's Course

  • 2009   NA   Master's Course

  • 2008   NA   Master's Course

  • 2008   NA   Master's Course

  • 2008   NA   Master's Course

  • 2008   NA   Master's Course

  • 2007   Device Process Engineering   Master's Course

  • 2007   NA   Master's Course

  • 2007   NA   Master's Course

  • 2007   NA   Master's Course

  • 2007   NA   Master's Course

▼display all

Papers and Awards Received Related to Improving Education

  • 2021   グッドレクチャー賞   和歌山大学システム工学部   Domestic

Research Interests

  • Mist Chemical Vapor Deposition

  • 化合物半導体

  • 結晶成長

  • 光デバイス

  • 半導体ナノ構造

  • Gallium oxide

  • Oxide Semiconductors

▼display all

Published Papers

  • Control of Al composition of mist chemical vapor deposition grown α-(AlGa)<sub>2</sub>O<sub>3</sub> alloy thin films by acetylacetonation of Al ion

    Kazuyuki Uno, Marika Ohta (Part: Lead author, Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  62   SF1026   2023.05  [Refereed]

     View Summary

    Abstract

    We investigated the dominant factors affecting the Al composition of α-(AlGa)<sub>2</sub>O<sub>3</sub> alloy thin films in mist chemical vapor deposition, focusing on the acetylacetonation of the source solutions. The Al acetylacetonate (acac) complex formation time was evaluated using Fourier-transform infrared spectroscopy to examine the effectiveness of heating during stirring of the source solutions. Then, α-(AlGa)<sub>2</sub>O<sub>3</sub> alloy thin films were grown in source solutions in which the state of the acac complex was changed by adding ammonia water and/or hydrochloric acid, and the Al composition increased with increasing the pH value due to acceleration of acetylacetonation. The growth-temperature dependence of the Al composition was also experimentally investigated. The Al composition decreased with increasing growth temperature. The reasons are due to the strength of Al–O bond or dissociation of Al–acac ligand.

    DOI

  • Polysilsesquioxane Gate Dielectric Layers Cured by Ultra‐Violet Light Irradiation Using Thiol‐Ene Reaction for Organic Thin‐Film Transistors

    Yoshio Nakahara, Ken-ichiro Yamane, Tomoaki Nakagami, Kazuyuki Uno, Ichiro Tanaka

    physica status solidi (a) ( Wiley )    2023.04  [Refereed]

    DOI

  • Growth of α-(AlGa)<sub>2</sub>O<sub>3</sub> alloy thin films on c-sapphire substrates by mist chemical vapor deposition using acetylacetonated Al and Ga solutions

    Marika Ohta, Hiroto Tamura, Kazuyuki Uno (Part: Last author, Corresponding author )

    Applied Physics Express ( IOP Publishing )  15 ( 5 ) 055502   2022.04  [Refereed]

     View Summary

    α-Ga<sub>2</sub>O<sub>3</sub> is a semi-stable phase of Ga<sub>2</sub>O<sub>3</sub> and is known as an ultra-wide-bandgap semiconductor material. α-(AlGa)<sub>2</sub>O<sub>3</sub> alloys are important for their applications in electronic and optoelectronic devices. We investigated the growth mechanism and process of α-(AlGa)<sub>2</sub>O<sub>3</sub> alloys by mist chemical vapor deposition using acetylacetonated Al and Ga aqueous solutions. The contribution of acetylacetonated Al ions to the epitaxial growth was investigated. The effects of an anchoring mechanism on the mosaic spread were experimentally evaluated. Investigating $10\overline{1}4$ X-ray diffraction profiles, strain relaxation processes in film formations are discussed.

    DOI

  • Synthesis and Thin Film Growth of Oxide and Sulfide Semiconductors by Atmospheric Pressure Mist Chemical Vapor Deposition Method

    Kazuyuki Uno (Part: Lead author, Corresponding author )

    Sulfric Acid and Industory ( THE SULPHYRIC ACID ASSOCIATION OF JAPAN )  75 ( 4 ) 41 - 50   2022.04  [Invited]

  • Prospects for phase engineering of semi-stable Ga<sub>2</sub>O<sub>3</sub> semiconductor thin films using mist chemical vapor deposition

    Kentaro Kaneko, Kazuyuki Uno, Riena Jinno, Shizuo Fujita

    Journal of Applied Physics ( AIP Publishing )  131 ( 9 ) 090902 - 090902   2022.03  [Refereed]  [Invited]

     View Summary

    Routes to semi-stable phases of Ga[Formula: see text]O[Formula: see text] are the subject of extended discussions based on the review of growth methods, growth conditions, and precursors in works that report semi-stable phases other than the thermally stable [Formula: see text] phase. The focus here is on mist chemical vapor deposition because it has produced single-phase Ga[Formula: see text]O[Formula: see text] of [Formula: see text], [Formula: see text], and [Formula: see text] (or [Formula: see text]) in terms of the substrate materials, and features of this growth method for phase control are emphasized. Recent reports of phase control by other growth technology give a deeper understanding of how to determine and control the phases, increasing the opportunities to fully utilize the novel and unique properties of Ga[Formula: see text]O[Formula: see text].

    DOI

  • Pentacene memory transistors using ligand-exchanged and energy-level-controlled PbS colloidal nanodots for charge-trapping layers

    Seiya Ihara, Kazuyuki Uno, Ichiro Tanaka

    Japanese Journal of Applied Physics ( IOP Publishing )  60 ( 2 ) 028001 - 028001   2021.02  [Refereed]

    DOI

  • Growth mechanism of α-Ga<sub>2</sub>O<sub>3</sub> on a sapphire substrate by mist chemical vapor deposition using acetylacetonated gallium source solutions

    Kazuyuki Uno, Marika Ohta, Ichiro Tanaka (Part: Lead author, Corresponding author )

    Applied Physics Letters ( AIP Publishing )  117 ( 5 ) 052106 - 052106   2020.08  [Refereed]

    DOI

  • 手作り分光器の改良 ~利き目の問題と可変スリット~

    井口楓梨, 宇野和行, 富田晃彦

    天文教育   32 ( 4 ) 2 - 8   2020.07

  • 硫化アンモニウム処理したPbSコロイダルナノドット薄膜を用いた電界効果トランジスタ

    竹市祐実, 三谷展弘, 宇野和行, 田中一郎

    材料   67 ( 9 ) 840 - 843   2018.09  [Refereed]

  • Ester-free cross-linker molecules for ultraviolet-light-cured polysilsesquioxane gate dielectric layers of organic thin-film transistors

    Shuichi Okada, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

    Japanese Journal of Applied Physics ( Japan Society of Applied Physics )  57 ( 4 )   2018.04  [Refereed]

     View Summary

    Pentacene thin-film transistors (TFTs) were fabricated with ultraviolet-light (UV)-cured polysilsesquioxane (PSQ) gate dielectric layers using cross-linker molecules with or without ester groups. To polymerize PSQ without ester groups, thiol-ene reaction was adopted. The TFTs fabricated with PSQ layers comprising ester-free cross-linkers showed a higher carrier mobility than the TFTs with PSQ layers cross-linked with ester groups, which had large electric dipole moments that limited the carrier mobility. It was demonstrated that the thiol-ene reaction is more suitable than the conventional radical reaction for UV-cured PSQ with small dielectric constant.

    DOI

  • Improving the carrier mobility of pentacene thin film transistors by surface flattened polysilsesquioxane gate dielectric layers

    Daisuke Michiura, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

    Zairyo/Journal of the Society of Materials Science, Japan ( Society of Materials Science Japan )  66 ( 9 ) 644 - 647   2017.09  [Refereed]

     View Summary

    The surface flatness of photo-curable polysilsesquioxane (PSQ) films for gate dielectric layers of pentacene thin film transistors (TFTs) was considerably improved by ultra-violet light (UV)/O3 treatment
    the root-mean-squared (RMS) roughness was improved from 0.35 to 0.23 nm after 40-minute treatment. However, the PSQ surfaces became hydrophilic because hydroxyl groups, which degraded transistor performances, replaced the organic functional groups such as methyl groups by the UV/O3 treatment. Therefore, 1,1,1,3,3,3-hexamethyldisilazane (HMDS) treatment was successively performed after the UV/O3 treatment to replace the hydroxyl groups with hydrophobic silyl groups. It was found that four-hour HMDS treatment under dry nitrogen was enough to reduce off current of pentacene TFTs. As a result, the carrier mobility of the pentacene TFT fabricated with UV/O3 and HMDS-treated PSQ layers became 0.59 cm2V-1s-1, which was more than seven times higher than that of the pentacene TFTs with untreated PSQ layers.

    DOI

  • ポリシルセスキオキサンゲート絶縁膜の表面平坦化によるペンタセン薄膜トランジスタのキャリア移動度向上

    道浦大佑, 中原佳夫, 宇野和行, 田中一郎

    材料   66 ( 9 ) 644 - 647   2017.09  [Refereed]

  • Organic thin-film transistors based on solution-processable benzodithiophene dimers modified with hexyl groups

    Takeshi Hirota, Hitoshi Toake, Hideji Osuga, Kazuyuki Uno, Ichiro Tanaka

    Japanese Journal of Applied Physics ( IOP Publishing )  56 ( 4 ) 048002 - 048002   2017.04  [Refereed]

     View Summary

    Benzodithiophene dimers modified with hexyl groups (2C<inf>6</inf>-BDT-dimer) were investigated as solution-processable organic semiconductors for organic thin-film transistors (OTFTs). Since 2C<inf>6</inf>-BDT-dimer crystals have an anisotropic shape, flow coating was adopted to grow polycrystalline films. The flow-coated films were inferior to the vacuum-evaporated ones in terms of their crystallinity estimated from X-ray diffraction data. However, the hole mobility of the OTFTs with the flow-coated films, which was 1.7 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>at maximum, was higher than that of the OTFTs with vacuum-evaporated films because the one-dimensional thin crystals of the flow-coated films were aligned in the flow-coating direction.

    DOI

  • Recent Advancement of Semiconductor Materials and Devices, IV: Zinc Oxide Thin and Thick FIlm Growth by Electrochemical Deposition

    Kazuyuki Uno (Part: Lead author, Corresponding author )

    Journal of the Society of Materials Science, Japan ( 日本材料学会 )  66 ( 4 ) 312 - 317   2017.04  [Refereed]  [Invited]

  • Pentacene memory transistors with a monolayer of ligand-removed semiconductor colloidal nanodots used as a charge-trapping layer

    Fumihoru Nakano, Kazuyuki Uno, Ichiro Tanaka

    physica status solidi (a) ( Wiley )  214 ( 3 ) 1600545 - 1600545   2017.03  [Refereed]

    DOI

  • Photoluminescence thermal quenching properties of zinc sulfide grown by mist chemical vapor deposition

    Kazuyuki Uno, Yasuyuki Asano, Ichiro Tanaka (Part: Lead author, Corresponding author )

    physica status solidi (b) ( Wiley )  254 ( 2 ) 1600544 - 1600544   2017.02  [Refereed]

    DOI

  • Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Kazuyuki Uno, Yuichiro Yamasaki, Ichiro Tanaka (Part: Lead author, Corresponding author )

    Applied Physics Express ( IOP Publishing )  10 ( 1 ) 015502 - 015502   2017.01  [Refereed]

     View Summary

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H<inf>2</inf><sup>16</sup>O and H<inf>2</inf><sup>18</sup>O for ZnO growth and ZnCl<inf>2</inf>and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

    DOI

  • Improving the carrier mobility of pentacene thin film transistors by surface treatment of polysilsesquioxane gate dielectric layers

    Daisuke Michiura, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

    Zairyo/Journal of the Society of Materials Science, Japan ( Society of Materials Science Japan )  65 ( 9 ) 652 - 655   2016.09  [Refereed]

     View Summary

    We improved the carrier mobility of the pentacene thin film transistors (TFT), which were fabricated with polysilsesquioxane (PSQ) gate dielectric layers, from 0.082 to 0.31 cm2V-1s-1 by treating the PSQ surface with ultra-violet irradiation (UV)/O3 and 1,1,1,3,3,3-hexamethyldisilazane (HMDS). It was found that the PSQ layers were flattened by the UV/O3 treatment, and the PSQ surface became hydrophilic at the same time because the organic functional groups on the PSQ surface were changed to hydroxyl groups. The grains of the pentacene films deposited on the UV/O3-treated PSQ surfaces were found to be as large as a few microns. However, the carrier mobility of the pentacene TFTs was not so much improved as expected from the largely grown pentacene grains probably because the hydroxyl groups scattered the charged carriers. In addition, the off-current of the pentacene TFTs increased by 4 orders of magnitude. It is thus considered that the hydroxyl groups also worked as hopping sites for the increased off-current which flew without the gate voltage. On the other hand, the carrier mobility of the pentacene TFTs fabricated with the PSQ dielectric layers of which surfaces were treated with UV/O3 and HMDS became ∼4 times larger than that without any surface treatment of the PSQ layers, and also the off-current decreased by 3 orders of magnitude because the hydroxyl groups were changed with silyl groups by the HMDS treatment.

    DOI

  • Improving the Carrier Mobility of Pentacene Thin Film Transistors by Surface Treatment of Polysilsesquioxane Gate Dielectric Layers

    道浦大佑, 中原佳夫, 宇野和行, 田中一郎

    材料 ( 日本材料学会 )  65 ( 9 ) 652 - 655   2016.09  [Refereed]

  • Growth of zinc sulfide by mist chemical vapor deposition depending on mist size and thermal conditions in susceptor

    Kazuyuki Uno, Yuichiro Yamasaki, Ping Gu, Ichiro Tanaka (Part: Lead author, Corresponding author )

    physica status solidi (c) ( Wiley )  13 ( 7-9 ) 448 - 451   2016.07  [Refereed]

    DOI

  • High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers

    Yu Matsuda, Yoshio Nakahara, Daisuke Michiura, Kazuyuki Uno, Ichiro Tanaka

    Journal of Nanoscience and Nanotechnology ( American Scientific Publishers )  16 ( 4 ) 3273 - 3276   2016.04  [Refereed]

     View Summary

    Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene)
    thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78±0.3 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, which are comparable to those of the previously reported transistors using singlecrystalline TIPS-pentacene
    micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. It is therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

    DOI

  • Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

    Hideto Shibao, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

    Journal of Nanoscience and Nanotechnology ( American Scientific Publishers )  16 ( 4 ) 3327 - 3331   2016.04  [Refereed]

     View Summary

    Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the
    pentacene layers deposited on the UV-light cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added
    to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

    DOI

  • Pentacene Memory Transistors Using Monolayer of Ligand-removed Semiconductor Colloidal Nano-dots as a Floating Gate

    Fumihoru Nakano, Kazuyuki Uno, Ichiro Tanaka

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) ( IEEE )    2016  [Refereed]

  • Temperature Dependence of Photoluminescence Properties of Zinc Sulfide Grown from Aqueous Solutions by Mist Chemical Vapor Deposition

    Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) ( IEEE )    2016  [Refereed]

  • Growth Mechanism of Zinc Sulfide Films by Mist Chemical Vapor Deposition

    Yuichiro Yamasaki, Kazuyuki Uno, Ping Gu, Ichiro Tanaka (Part: Corresponding author )

    Journal of the Society of Materials Science, Japan   64 ( 9 ) 707 - 710   2015.09  [Refereed]

  • Growth of zinc oxide on pyrolytic graphite sheet by electrochemical and mist chemical vapor depositions

    Shunsuke Kake, Kazuyuki Uno, Ikuhiro Furotani, Harutaka Makabe, Yuichiro Yamasaki, Ichiro Tanaka (Part: Corresponding author )

    Physica Status Solidi (C) Current Topics in Solid State Physics ( Wiley-VCH Verlag )  11 ( 7-8 ) 1233 - 1236   2014  [Refereed]

     View Summary

    Growth of zinc oxide (ZnO) on pyrolytic graphite sheet (PGS) by electrochemical deposition (ECD) and mist chemical vapor deposition (CVD) was investigated in the viewpoint of crystal orientations. We examined the fullwidth at half-maximum (FWHM) of X-ray rocking curve profiles of graphite 0002 and ZnO 0002 diffractions for the investigations. In the case of ECD, thermal annealing at 400, 800, and 1000 °C for PGS before the growth reduced the FWHM value of the grown ZnO. On the other hand, in the case of mist CVD, the growth process and an etching process which may flatten the surface roughness simultaneously occurred. As a result, the FWHM values of the grown ZnO and the PGS were almost the same. These results indicate that each ZnO grain was grown on each graphite grain along with a same c-orientation direction. © 2014 WILEY-VCH Verlag GmbH &amp
    Co. KGaA, Weinheim.

    DOI

  • Organic field-effect transistors fabricated by solution process using TMTSF-TCNQ complex crystals grown at various temperatures

    Takuya Nawata, Hideo Yamakado, K. Uno, Ichiro Tanaka

    physica status solidi (c) ( Wiley )  10 ( 11 ) 1636 - 1639   2013.11  [Refereed]

    DOI

  • Zinc Oxide Thick Film Growth on n-Type Gallium Nitride by Photoassisted Electrodeposition

    Kazuyuki Uno, Junpei Ikegami, Mitsuteru Sainokami, Ichiro Tanaka (Part: Lead author, Corresponding author )

    Journal of the Society of Materials Science, Japan ( The Society of Materials Science, Japan )  66 ( 11 ) 668 - 671   2013.11  [Refereed]

     View Summary

    Zinc oxide (ZnO) thick film growth on n-type gallium nitride (n-GaN) using an electrodeposition was investigated. We supplied electrons to the surface by light excitation using a Xe lamp for a long continuous electrochemical deposition. By using this technique, stable electrochemical reactions for 20h and 120h were realized. The sample grown for 20h had a thickness of 26<i>μ</i>m, an averaged optical transmission of 85% in the visible-light region, and no obvious grain boundary from its cross-sectional SEM image. On the other hand, the sample grown for 120h had a thickness of 140<i>μ</i>m, an averaged optical transmission of 25%, and many grain boundaries. Optimization of growth conditions for the thickness of above 30∼40<i>μ</i>m is necessary.

    DOI

  • Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiophene-dimer films

    Tomoya Sakai, Y. Matsumoto, K. Shibamoto, H. Osuga, K. Uno, Ichiro Tanaka

    Journal of Crystal Growth ( Elsevier BV )  378   347 - 350   2013.09  [Refereed]

    DOI

  • ZnO Thick Film Growth on n-GaN by Photoassisted Electrodeposition

    Kazuyuki Uno, Yasuhiro Tauchi, Ichiro Tanaka (Part: Lead author, Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  52 ( 8S ) 08JE16 - 08JE16   2013.08  [Refereed]

     View Summary

    Zinc oxide (ZnO) thick film growth on n-GaN using an electrodeposition technique was investigated. Although the reaction temperature is about 70 °C in cathodic electrodeposition, ZnO can grow epitaxially on GaN owing to their small lattice mismatch. However, the quality of grown ZnO is too high for electrons to be supplied from the substrate. As a consequence, the electrodeposition can continue for only 50 min. On the other hand, in the case of the growth of ZnO on highly oriented pyrolytic graphite (HOPG), the electrochemical reaction can continue for over 15 h owing to the supply of electrons via grain boundaries or defects. For a long continuous electrochemical reaction, we supply electrons to the surface by light excitation using a Xe lamp. A stable electrochemical reaction is realized and a 5-μm-thick ZnO film with high uniformity is obtained.

    DOI

  • Organic Memory Transistors Using Monolayer of Semiconductor Colloidal Nano-Dots as a Floating Gate

    Kaori Kajimoto, Daisuke Matsui, Kazuyuki Uno, Ichiro Tanaka

    Japanese Journal of Applied Physics ( IOP Publishing )  52 ( 5S1 ) 05DC04 - 05DC04   2013.05  [Refereed]

     View Summary

    We fabricated pentacene-based memory field-effect transistors (FETs) in which a monolayer of semiconductor colloidal nano-dots (NDs) is embedded as a floating gate. After a sufficiently large writing voltage was applied on the control gate, the fabricated FETs showed a large positive threshold voltage (V_{\text{th } }) shift that was attributed to electrons trapped in embedded NDs. The V_{\text{th } } shift was measured as a function of the writing voltage, and it was shown that the minimum writing voltage for memory FETs with small NDs is significantly larger than that for FETs with large ones. This result supports the proposed model of the memory effect in which electrons that tunneled from nearby pentacene molecules are trapped in embedded NDs because the electron energy level in small NDs is higher than that in large ones.

    DOI

  • Investigation of polysilsesquioxane as a gate dielectric material for organic field-effect transistors

    M. Kawamura, Yoshio Nakahara, Mitsuhiro Ohse, Maki Kumei, K. Uno, Hidefumi Sakamoto, Keiichi Kimura, Ichiro Tanaka

    Applied Physics Letters ( AIP Publishing )  101 ( 5 ) 053311 - 053311   2012.07  [Refereed]

    DOI

  • Large Memory Effect and High Carrier Mobility of Organic Field-Effect Transistors Using Semiconductor Colloidal Nano-Dots Dispersed in Polymer Buffer Layers

    Kaori Kajimoto, Atsushi Kurokawa, Kazuyuki Uno, Ichiro Tanaka

    Japanese Journal of Applied Physics ( IOP Publishing )  50 ( 2 ) 021601 - 021601   2011.02  [Refereed]

     View Summary

    We fabricated organic memory field-effect transistors (FETs) using PbS colloidal nano-dots (NDs) dispersed in thin poly(methyl methacrylate) (PMMA) layers inserted between gate insulators (SiO2) and pentacene active layers as floating gates. The colloidal NDs were dispersed in chloroform solution with PMMA, and spin-coated on SiO2 surfaces. The fabricated memory FETs showed significantly large threshold voltage shifts of 64.5 V at maximum after a writing voltage of 100 V was applied to their control gates, and a maximum carrier mobility of 0.36 cm2 V-1 s-1, which was comparable to that of reference pentacene FETs without colloidal NDs, was obtained because of the improved crystallinity of the pentacene films.

    DOI

  • Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

    Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, I. Kamiya, H. Sakaki

    Physica E: Low-dimensional Systems and Nanostructures ( Elsevier BV )  42 ( 10 ) 2606 - 2609   2010.09  [Refereed]

    DOI

  • Memory effect of pentacene field-effect transistors with embedded monolayer of semiconductor colloidal nano-dots

    Kaori Kajimoto, K. Uno, Ichiro Tanaka

    Physica E: Low-dimensional Systems and Nanostructures ( Elsevier BV )  42 ( 10 ) 2816 - 2819   2010.09  [Refereed]

    DOI

  • Resonant tunneling of electrons through single self-assembled In As quantum dot studied by conductive atomic force microscopy

    Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, I. Kamiya, H. Sakaki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES ( ELSEVIER SCIENCE BV )  42 ( 10 ) 2606 - 2609   2010.09

     View Summary

    Resonant tunneling of electrons through a quantum level in single self-assembled InAs quantum dot (QD) embedded in thin AlAs barriers has been studied. The embedded InAs QDs are sandwiched by 1.7-nm-thick AlAs barriers, and surface InAs QDs, which are deposited on 8.3 nm-thick GaAs cap layer, are used as nano-scale electrodes. Since the surface InAs QD should be vertically aligned with a buried one, a current flowing via the buried QD can be measured with a conductive tip of an atomic force microscope (AFM) brought in contact with the surface QD-electrode. Negative differential resistance attributed to electron resonant tunneling through a quantized energy level in the buried QD is observed in the current-voltage characteristics at room temperature. The effect of Fermi level pinning around nano-scale QD-electrode on resonance voltage and the dependence of resonance voltage on the size of QD-electrodes are investigated, and it has been demonstrated that the distribution of the resonance voltages reflects the size variation of the embedded QDs. (C) 2009 Elsevier B.V. All rights reserved.

    DOI

  • Contact and channel resistances of organic field-effect transistors based on benzodithiophene-dimer films deposited on pentacene crystallinity control layers

    A. Kurokawa, Y. Matsumoto, K. Shibamoto, Kaori Kajimoto, H. Osuga, Hideo Yamakado, K. Uno, Ichiro Tanaka

    Applied Physics Letters ( AIP Publishing )  95 ( 26 ) 263307 - 263307   2009.12  [Refereed]

    DOI

  • Carrier transport in benzodithiophene-dimer field-effect transistors with pentacene crystallinity control layers

    Y. Matsumoto, S. Takamiya, A. Kurokawa, H. Osuga, K. Uno, Ichiro Tanaka

    Applied Physics Letters ( AIP Publishing )  94 ( 20 ) 203305 - 203305   2009.05  [Refereed]

    DOI

  • Expansion ratio dependence of lattice vibration of GaN using ab initio molecular dynamics calculations

    Kazuyuki Uno, Takuki Inoue, Toshiyuki Takizawa, Ichiro Tanaka (Part: Lead author, Corresponding author )

    Journal of Crystal Growth ( Elsevier BV )  311 ( 10 ) 3100 - 3102   2009.05  [Refereed]

    DOI

  • Crystallinity improvement of benzodithiophene-dimer films for organic field-effect transistors

    K. Yamaguchi, S. Takamiya, M. Minami, Y. Doge, Y. Nishide, H. Osuga, K. Uno, Ichiro Tanaka

    Applied Physics Letters ( AIP Publishing )  93 ( 4 ) 043302 - 043302   2008.07  [Refereed]

    DOI

  • Resonant tunneling of electrons through single self-assembled InAs quantum dot at room temperature studied with conductive AFM tip

    Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, M. Azuma, K. Umemura, I. Kamiya, H. Sakaki

    physica status solidi (c) ( Wiley )  5 ( 9 ) 2938 - 2940   2008.07

    DOI

  • Investigation of electric double layer and crystal shapes of electrochemically grown zinc oxide

    Kazuyuki Uno, Tadayuki Kanda, Masashi Aisu, Takayuki Asaoka, Tsutomu Ina, Ichiro Tanaka, Munenori Yamashita (Part: Lead author, Corresponding author )

    physica status solidi (c) ( Wiley )  5 ( 9 ) 3141 - 3143   2008.07  [Refereed]

    DOI

  • Organic Field-Effect Transistors Based on Benzodithiophene-Dimer Films

    Kazuki Yamaguchi, Kensuke Nakashima, Shota Takamiya, Masafumi Minami, Yuyu Doge, Yosuke Nishide, Hideji Osuga, Kazuyuki Uno, Chikanobu Nakamoto, Ichiro Tanaka

    Japanese Journal of Applied Physics ( IOP Publishing )  46 ( No. 29 ) L727 - L729   2007.07  [Refereed]

     View Summary

    We fabricated organic field-effect transistors (OFETs) based on benzodithiophene (BDT)-dimer films by vacuum evaporation. The surface of the BDT-dimer films deposited on a SiO2 gate insulator was so rough that excellent FET characteristics were not obtained. However, the surface morphology of the films deposited on poly(methyl methacrylate) buffer layers was significantly improved, and dense grains of submicron size were formed. Grain size increased from the submicron scale to the micron scale by reducing growth rate from 0.035 to 0.02 nm/s. The fabricated OFETs have shown p-type FET characteristics with a carrier mobility of 0.016 cm2 V-1 s-1. More importantly, it has been demonstrated that the performance of the BDT-dimer OFET is much more stable in air than that of the pentacene OFET.

    DOI

  • Thermal annealing effects and local atomic configurations in GaInNAs thin films

    Kazuyuki Uno, Masako Yamada, Ichiro Tanaka, Osamu Ohtsuki, Toshiyuki Takizawa (Part: Lead author, Corresponding author )

    Journal of Crystal Growth ( Elsevier BV )  278 ( 1-4 ) 214 - 218   2005.05  [Refereed]

    DOI

  • Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode

    I. Kamiya, Ichiro Tanaka, Y. Tada, M. Azuma, K. Uno, H. Sakaki

    Journal of Crystal Growth ( Elsevier BV )  278 ( 1-4 ) 98 - 102   2005.05  [Refereed]

    DOI

  • Improved Height Measurement of Single CdSe Colloidal Quantum Dots by Contact-Mode Atomic Force Microscopy Using Carbon Nano-Tube Tips; for the Investigation of Current-Voltage Characteristics

    Ichiro Tanaka, Kaori Kajimoto, Kazuyuki Uno, Osamu Ohtsuki, Tomohide Murase, Harumi Asami, Masahiko Hara, Itaru Kamiya

    Japanese Journal of Applied Physics ( IOP Publishing )  44 ( No. 7 ) L249 - L252   2005.01  [Refereed]

     View Summary

    We have investigated the distribution of measured heights of single CdSe colloidal quantum dots (QDs) by contact-mode atomic force microscopy. The dot heights measured with metal-coated Si tips, with which large adhesive force is measured between the tip and sample, are much smaller than that expected from optical absorption. This discrepancy could be due to the dot position fluctuation that occurs when the tip is in contact with the dot because the height distribution of the QDs covered with very thin SiO2 layer is in agreement with the optical measurement. On the other hand, when conductive carbon nano-tube (CNT) tips are used, the adhesive force is reduced significantly, and the measured dot heights become close to the expected value. Thus, the measurement of QD height is greatly improved in accuracy with CNT tips. As a result, the current flowing through the QD can be measured, and conductance changes attributed to electron resonant tunneling through the QD are observed.

    DOI

  • Thermal Annealing Effect in GaInNAs Thin Films Estimated by Fluorescence X-Ray Absorption Fine Structure Spectroscopy

    Kazuyuki Uno, Masako Yamada, Toshiyuki Takizawa, Ichiro Tanaka (Part: Lead author, Corresponding author )

    Japanese Journal of Applied Physics ( IOP Publishing )  43 ( 4B ) 1944 - 1946   2004.04  [Refereed]

     View Summary

    The radiative efficiency of dilute nitride GaInNAs alloys is improved by thermal annealing. However, the band gap of these alloys is found to significantly blueshift. The structural changes of these alloys occur during thermal annealing. In this study, we studied the local atomic configuration around In atoms using fluorescence X-ray absorption fine structure spectroscopy. By comparing the radial distribution functions of as-grown and annealed GaInNAs thin films, it was found that the number of In atoms surrounding N atoms increases after thermal annealing.

    DOI

  • Conductive-tip atomic force microscopy of CdSe colloidal nanodots

    Tanaka, I, E Kawasaki, O Ohtsuki, K Uno, M Hara, H Asami, Kamiya, I

    Surface Science ( ELSEVIER SCIENCE BV )  532   801 - 805   2003.06  [Refereed]

     View Summary

    Electronic properties of individual Use colloidal nanodots have been investigated by conductive-tip atomic force microscopy (AFM). Submonolayer-thick films of the colloidal nanodots were fabricated on a self-assembled monolayer of alkanethiol molecules formed on Au(111) surfaces for single dot measurements. First, we simultaneously imaged the topography and conductivity of isolated single dots by AFM operating in contact mode with a conductive tip under appropriate bias voltages. In the current image, it is found that the dot regions have higher electric resistances due to tunneling resistance through the Use dots. We found a 10-nm scale,electric inhomogeneity around the dots, which may correspond to the previously reported etch-pits of Au(111) surfaces formed during the deposition of the alkanethiol molecules. Then, current-voltage characteristics were measured with the conductive tip positioned on the single dots; large changes in the conductivity which suggest resonant tunneling through the quantized energy level in the dot were observed even at room temperature. (C) 2003 Elsevier Science B.V. All rights reserved.

    DOI

  • Conductive-tip atomic force microscopy of CdSe colloidal nanodots

    I. Tanaka, E. Kawasaki, O. Ohtsuki, K. Uno, M. Hara, H. Asami, I. Kamiya

    Surface Science ( Elsevier BV )  532-535   801 - 805   2003.06  [Refereed]

    DOI

  • Nearest-Neighbor Configuration in (GaIn)(NAs) Probed by X-Ray Absorption Spectroscopy

    Vincenzo Lordi, Vincent Gambin, Stephan Friedrich, Tobias Funk, Toshiyuki Takizawa, Kazuyuki Uno, James S. Harris

    Physical Review Letters ( American Physical Society (APS) )  90 ( 14 ) 145505-1 - 145505-4   2003.04  [Refereed]

    DOI

  • Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure

    Vincent Gambin, Vincenzo Lordi, Wonill Ha, Mark Wistey, Toshiyuki Takizawa, Kazuyuki Uno, Stephan Friedrich, James Harris

    Journal of Crystal Growth ( Elsevier BV )  251 ( 1-4 ) 408 - 411   2003.04  [Refereed]

    DOI

  • Photoluminescence and Photoluminescence Excitation Spectra of AlAs/GaAs Disordered Superlattices with Various Disordered Lengths

    Kazuyuki Uno, Susumu Noda, Akio Sasaki (Part: Lead author )

    Japanese Journal of Applied Physics ( IOP Publishing )  35 ( Part 1, No. 5A ) 2566 - 2572   1996.05  [Refereed]

     View Summary

    A disordered superlattice (d-SL) is a superlattice with artificial disordering. Temperature dependence of photoluminescence (PL) and PL excitation (PLE) spectra are measured for AlAs/GaAs short-period d-SLs with various disordered lengths and are compared with those of ordered superlattices (o-SLs). X-ray satellite peaks are split and PL peak energies are red-shifted with increase of the unit length of disorder. From the PLE results, radiative recombination processes in the AlAs/GaAs d-SLs are inferred to be type-II. The d-SL with a longer unit length of disorder shows more complicated variations in the PL spectrum with changing temperature. The variations are intensified with increase of the disorder lengths. These variations indicate that the localized strength which corresponds to the disorder length is different among the states induced by disordering. The dominant radiative recombination states at higher temperature would correspond to stronger localized states in the d-SLs.

    DOI

  • Photoluminescence properties of disordered superlattices with fixed GaAs or AlAs layer thickness

    Kazuyuki Uno, Susumu Noda, Akio Sasaki (Part: Lead author )

    Materials Science and Engineering: B ( Elsevier BV )  35 ( 1-3 ) 406 - 409   1995.12  [Refereed]

    DOI

  • Photoluminescence thermal‐quenching and carrier localization of AlGaAs disordered superlattices

    Kazuyuki Uno, Susumu Noda, Akio Sasaki (Part: Lead author )

    Journal of Applied Physics ( AIP Publishing )  77 ( 9 ) 4693 - 4700   1995.05  [Refereed]

    DOI

  • Temperature dependence of photoluminescence properties of AlAs/AlxGa1-xAs and AlyGa1-yAs/GaAs disordered superlattices

    Kazuyuki Uno, Kotaro Hirano, Susumu Noda, Akio Sasaki (Part: Lead author )

    Inst. Phys. Conf. Ser.   129   241 - 246   1993.01  [Refereed]

▼display all

Books etc

  • 半導体用語大辞典

    半導体用語大辞典編集委員会

    日刊工業新聞社  1999.03  ISBN: 4526043419

Works

  • IRCA (Internet Relay Chat Adapter)

    宇野和行 

    1993
     Software

  • IRCW (Internet Relay Chat for Windows)

    宇野和行 

    1993
     Software

Awards & Honors

  • システム工学部論文賞

    Winner: 宇野和行

    2022.10   和歌山大学システム工学部  

  • グッドレクチャー賞(電磁気学I)

    Winner: 宇野和行

    2021.09   和歌山大学システム工学部  

  • システム工学部論文賞

    Winner: 宇野和行

    2020.10   和歌山大学システム工学部  

Conference Activities & Talks

  • Amorphous Ga2O3 thin films grown on quartz substrates and their photoconductive properties

    尾友 響, 田中 一成, 宇野 和行

    2024年第71回応用物理学会春季学術講演会, 24p-P16-6  2024.03.24   (東京都市大学世田谷キャンパス)  Japan Society of Applied Physics

  • High temperature growth of α-Ga2O3 thin films on c, a, m, n, r oriented sapphire substrates by mist chemical vapor deposition

    Hiroto Tamura, Kazuyuki Uno

    2023年第70回応用物理学会春季学術講演会, 23p-31A-7  2024.03.23   (東京都市大学世田谷キャンパス)  Japan Society of Applied Physics

  • アモルファス酸化ガリウムの成長と光導電特性

    尾友 響, 宇野 和行

    日本材料学会半導体エレクトロニクス部門2023年度第3回研究会  2024.01.20   (鳥取大学)  日本材料学会半導体エレクトロニクス部門委員会

  • 深紫外線を高感度に検出するα型酸化ガリウム光半導体デバイス

    宇野和行

    第3回Challenge万博『いのち輝く未来社会』  2023.11.22   (三井住友銀行東館ライジングスクェア)  関西イノベーションイニシアチブ

  • Investigation of Initial Growths of alpha-Ga2O3 on Various Oriented Sapphire Substrates Grown by Mist Chemical Vapor Deposition

    Hiroto Tamura, Kazuyuki Uno

    42nd Electronic Materials Symposium, Th1-6  2023.10.11   (THE KASHIHARA, Kashihara City, Nara Prefecture) 

  • Photoconducting Properties of alpha-Ga2O3 on c- and a-Sapphire Substrates by Mist Chemical Vapor Deposition

    Keishi Yamaoka, Kazuyuki Uno

    42nd Electronic Materials Symposium, We2-3  2023.10.10   (THE KASHIHARA, Kashihara City, Nara Prefecture) 

  • Growth of Amorphous Ga2O3 on Quartz Substrates by Mist Chemical Vapor Deposition

    Kazuyuki Uno

    42nd Electronic Materials Symposium, We1-6  2023.10.10   (THE KASHIHARA, Kashihara City, Nara Prefecture) 

  • ソーラーブラインド光の高感度検出による水中での光通信や物体検知

    宇野和行

    MOBIO産学連携オフィス テーマ別合同シーズ発表会-デジタル技術編-  2023.10.03   (クリエイション・コア東大阪)  大阪府、(公財)大阪産業局

  • Inivestigation of initial growth of alpha-Ga2O3 in mist-CVD

    Hiroto Tamura, Kazuyuki Uno

    第84回応用物理学会秋季学術講演会, 21p-P09-17  2023.09.21   (熊本県熊本市熊本城ホール)  Japan Society of Applied Physics

  • Amorphous Ga2O3 thin films grown on quartz substrates using mist chemical vapor deposition

    Kazuyuki Uno

    第84回応用物理学会秋季学術講演会, 19p-A302-11  2023.09.19   (熊本県熊本市熊本城ホール)  Japan Society of Applied Physics

  • ミストCVD法を用いた高品質な酸化物半導体の作製技術

    宇野和行

    大学見本市2023~イノベーション・ジャパン~ C-51  2023.08.23   (東京ビッグサイト 南展示棟 南1ホール(東京都江東区有明3-11-1))  国立研究開発法人科学技術振興機構

  • a面サファイア基板上にミストCVD成長した酸化ガリウム薄膜の光導電特性

    山岡敬嗣, 宇野和行

    日本材料学会半導体エレクトロニクス部門2023年度第1回研究会、講演番号5  2023.07.29   (大阪市浪速区敷津東2-1-41 大阪公立大学 I-siteなんば)  日本材料学会半導体エレクトロニクス部門委員会

  • 各種面方位サファイア基板上におけるα型酸化ガリウムのミストCVD初期成長過程の検討

    田村大翔, 宇野和行

    日本材料学会半導体エレクトロニクス部門2023年度第1回研究会、講演番号4  2023.07.29   (大阪市浪速区敷津東2-1-41 大阪公立大学 I-siteなんば)  日本材料学会半導体エレクトロニクス部門委員会

  • a⾯サファイア基板上にミストCVD成⻑した酸化ガリウム薄膜によるMSM型光検出器の基本特性

    山岡敬嗣, 宇野和行

    2023年第70回応用物理学会春季学術講演会、17a-PB01-24  2023.03.17   (上智大学四谷キャンパス)  応用物理学会

  • アセチルアセトナート化した亜鉛原料⽔溶液を⽤いたa⾯サファイア基板上酸化亜鉛薄膜のミストCVD成⻑

    宇野和行, 西岡恵

    2023年第70回応用物理学会春季学術講演会、17a-PB01-8  2023.03.17   (上智大学四谷キャンパス)  応用物理学会

  • アセチルアセトナート化した亜鉛水溶液によるa面サファイア基板上酸化亜鉛の結晶成長

    西岡恵, 宇野和行

    日本材料学会半導体エレクトロニクス部門2022年度第2回研究会  2022.11.19   (京都大学桂キャンパス)  日本材料学会半導体エレクトロニクス部門委員会

  • Structural fluctuation in twist direction of α-(AlGa)2O3 thin films grown on c- and a-sapphire substrates by mist chemical vapor deposition (Pos 1-21)

    Kazuyuki Uno, Hiroto Tamura, Marika Ohta

    The 4th International Workshop on Gallium Oxide and Related Materials  2022.10.24  

  • Growth of α-(AlGa)2O3 and α-Ga2O3 thin films by mist chemical vapor deposition using acetylacetonated Al and Ga source solutions

    Kazuyuki Uno, Hiroto Tamura, Marika Ohta

    2022年第83回応用物理学会秋季学術講演会(20p-B203-21)  2022.09.20   (Kawauchi Campus, Tohoku University)  Japan Society of Applied Physics

     View Summary

    講演番号20p-B203-21

  • Characterization of semi-stable α-Ga2O3 thin films grown at various temperatures by mist chemical vapor deposition

    Kazuyuki Uno, Marika Ohta

    Compound Semiconductor Week 2022  2022.06.03   (University of Michigan, Ann Arbor, MI) 

  • Investigation of corundum structured oxide semiconductors by first principles calculations for realization of p-type α-Ga<sub>2</sub>O<sub>3</sub>

    Atsuto Itsumi, Kazuyuki Uno

    2022年第69回応用物理学会春季学術講演会(26p-E202-7)  2022.03.26   (青山学院大学相模原キャンパス+オンライン)  応用物理学会

  • ミストCVD法における原料水溶液の錯化とα型酸化ガリウムの高温成長

    太田茉莉香, 宇野和行

    2021年応用物理学会秋季講演会  2021.09.12   (オンライン(名城大学))  応用物理学会

  • Growth of Hematite Thin FIlms by Mist CHemical Vapor Deposition

    Hiyori Isojima, Kazuyuki Uno

    2021年電気化学秋季大会  2021.09.08   (オンライン(北海道大学))  The Electrochemical Society of Japan

  • Composition Control of Alpha-AlGaO Alloy Thin Films In Mist CVD

    Marika Ohta, Kazuyuki Uno

    Compound Semiconductor Week 2021  2021.05.12  

  • 配位子交換によりエネルギー準位を制御したPbSコロイダルナノドットを電荷蓄積層に用いたペンタセンメモリトランジスタ

    井原 聖矢, 宇野 和行, 田中 一郎

    第68回応用物理学会春季学術講演会  2021.03.18  

  • ミストCVD成長におけるα型AlGaO混晶組成制御とAl原子の再脱離

    太田 茉莉香, 田中 一郎, 宇野 和行

    第68回応用物理学会春季学術講演会  2021.03.17  

  • ミストCVD法によるα型AlGaO混晶成長とAl原子の再脱離

    太田 茉莉香, 田中 一郎, 宇野 和行

    日本材料学会半導体エレクトロニクス部門委員会 令和2年度第3回研究会  2021.01.23  

  • Alイオン錯化時間とミストCVD法によるAlGaO混晶成長

    太田 茉莉香, 宇野 和行, 田中 一郎

    日本材料学会半導体エレクトロニクス部門委員会 令和2年度第2回研究会  2020.11.14  

  • Mist CVD法を用いたα-(AlGa)2O3混晶成長におけるアセチルアセトナート錯化の影響

    太田 茉莉香, 宇野 和行, 田中 一郎

    第81回応用物理学会秋季学術講演会  2020.09.09  

  • アセチルアセトナート化した原料水溶液によるα型酸化ガリウム薄膜のミストCVD成長

    宇野 和行, 太田 茉莉香, 田中 一郎

    第67回応用物理学会春季学術講演会  2020.03.13  

  • T hermal Stability of Diverse Stable Phases: (AlxGa1-x)2O3 as an Example

    Riena Jinno, Kazuyuki Uno, Kentaro Kaneko, Shizuo Fujita

    第67回応用物理学会学術講演会, 12a-A301-5  2020.03.12  

  • PbSコロイダルナノドットをフローティングゲートに用いた有機メモリトランジスタの配位子交換による特性改善

    井原 聖矢, 宇野 和行, 田中 一郎

    第67回応用物理学会春季学術講演会  2020.03  

  • エンチオール反応により紫外線重合させた有機薄膜トランジスタ用ポリシルセスキオキサンゲート絶縁膜

    山根 健一郎,, 中上 智章, 中原 佳夫, 宇野 和行, 田中 一郎

    第67回応用物理学会春季学術講演会  2020.03  

  • 2C6-BDT-dimerを用いた有機薄膜トランジスタのフローコート法による作製

    石井 洸一, 大須賀 秀次, 宇野 和行, 田中 一郎

    日本材料学会半導体エレクトロニクス部門委員会 2019年度第1回講演会・見学会  2020.01  

  • ナフタレンジイミド系材料を用いたn型有機薄膜トランジスタ

    田村 明日香, 友國 里香, 大須賀 秀次, 宇野 和行, 田中 一郎

    日本材料学会半導体エレクトロニクス部門委員会 2019年度第1回講演会・見学会  2020.01  

  • Growth Control of α-Ga2O3 Thin Films using Chloride-Based Gallium Source Solutions in Mist Chemical Vapor Deposition

    Kazuyuki Uno, Kazutoshi Matsumoto, Ichiro Tanaka

    The 9th Asia-Pasific Workshop on Widegap Semiconductors (APWS2019)  2019.11.14  

  • ナフタレンジイミド系材料を用いたn型有機薄膜トランジスタの閾値電圧低減

    田村明日香, 友國里香, 大須賀秀次, 宇野和行, 田中一郎

    薄膜材料デバイス研究会第16回研究集会  2019.11  

  • エンチオール反応により紫外線重合させたポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタ

    山根 健一郎, 中上 智章, 岡田 秀一, 中原 佳夫, 宇野 和行, 田中 一郎

    薄膜材料デバイス研究会第16回研究集会  2019.11  

  • 塩化物系ガリウム希薄水溶液によるα 型酸化ガリウム薄膜のミストCVD 成長(II)

    宇野和行, 松本一寿, 田中一郎

    第80 回応用物理学会秋季学術講演会  2019.09.21  

  • 有機トランジスタ用ポリシルセスキオキサンゲート絶縁膜における紫外線重合開始剤の検討

    秦野 航輔,, 中原 佳夫,, 宇野 和行, 田中 一郎

    日本材料学会半導体エレクトロニクス部門委員会 2019年度第1回研究会  2019.07  

  • Field-effect transistors based on ligand-removed PbS nano-dot films treated with ammonium sulfide solution

    Yumi Takeichi,, Kazuyuki Uno, Ichiro Tanaka

    The 10th Internatinal Conference on Molecular Electronics and BioElectronics  2019.06  

  • Investigation of photo-initiators for ultra-violet light cured polysilsesquioxane gate dielectric layers of organic thin-film transistors

    Kosuke Hatano, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

    The 10th Internatinal Conference on Molecular Electronics and BioElectronics  2019.06  

  • First Principles Study on Electronic Structures of α-Ga2O3 and α-Ir2O2

    Kazuyuki Uno, Taichi Nakamura, Ichiro Tanaka

    Compound Semiconductor Week 2019 (CSW2019)  2019.05.21  

  • コランダム構造を有する酸化物半導体の第一原理計算による評価

    宇野和行, 中村太紀, 田中一郎

    第66 回応用物理学会春季学術講演会  2019.03.11  

  • 2C4-BDT-dimerを用いた有機薄膜トランジスタにおける基板加熱フローコート法の改善

    森 慎吾, 大須賀 秀次, 宇野 和行, 田中 一郎

    第66回応用物理学会春季学術講演会  2019.03  

  • 有機薄膜トランジスタ用ポリシルセスキオサンゲート絶縁膜の光重合開始剤検討

    秦野 航輔, 中原 佳夫, 宇野 和行, 田中 一郎

    第66回応用物理学会春季学術講演会  2019.03  

  • 遮光板を用いた基板加熱フローコート法により成膜した2C4-BDT-dimerを用いた有機薄膜トランジスタ

    森 慎吾, 大須賀 秀次, 宇野 和行, 田中 一郎

    日本材料学会半導体エレクトロニクス部門委員会 平成30年度第1回講演会・見学会  2019.02  

  • 基板加熱フローコート法により成膜した2C4-BDT-dimer薄膜を用いた 有機薄膜トランジスタ

    森 慎吾, 大須賀 秀次, 宇野 和行, 田中 一郎

    薄膜材料デバイス研究会第15回研究集会  2018.11  

  • 硫化アンモニウム処理したPbSコロイダルナノドット薄膜を用いた電界効果トランジスタにおける作製プロセスの検討

    竹市 祐実, 宇野 和行, 田中 一郎

    薄膜材料デバイス研究会第15回研究集会  2018.11  

  • Photoconduvtive properties of α-Ga2O3 MSM devices

    K. Uno, C. Umemura, S. Nakamura, I. Tanaka

    37th Electronic Materials Symposium (EMS37)  2018.10.10  

  • 塩化物系ガリウム希薄水溶液によるα 型酸化ガリウム薄膜のミストCVD 成長

    松本一寿, 中村幸, 田中一郎, 宇野和行

    第79 回応用物理学会秋季学術講演会  2018.09.19  

  • α-Ga2O3 薄膜を用いた紫外線検出器とその2光子吸収特性

    宇野和行, 梅村千里, 中村幸, 田中一郎

    第79 回応用物理学会秋季学術講演会  2018.09.19  

  • 硫化アンモニウム処理したPbSコロイダルナノドット薄膜を用いた電界効果トランジスタにおける光照射効果

    竹市 祐実, 宇野 和行, 田中 一郎

    第79回応用物理学会秋季学術講演会  2018.09  

  • Photoconductivity of α-Ga2O3 Thin Films for Solar Blind Photodetectors

    Kazuyuki Uno, Chisato Umemura, Kazuyoshi Matsumoto, Sachi Nakamura, Ichiro Tanaka

    International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)  2018.06.04  

  • PbSコロイダルナノドット薄膜を用いた電界効果トランジスタの硫化アンモニウム処理条件の検討

    竹市 祐実, 宇野 和行, 田中 一郎

    第65回応用物理学会春季学術講演会  2018.03  

  • カーボンフリー酸化ガリウム薄膜のミストCVD 成長

    宇野和行

    新技術説明会  2018.01.16   科学技術振興機構

  • エステル基を含まない低分子架橋剤を用いて紫外線重合した有機薄膜トランジスタ用PSQゲート絶縁膜

    岡田 秀一, 中原 佳夫, 宇野 和行, 田中 一郎

    平成29年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会  2018.01  

  • Growth of α-Ga2O3 by mist CVD using carbon-free sources

    Sachi Nakamura, Kazuyuki Uno, Ichiro Tanaka

    36th Electronic Materials Symposium (EMS-36)  2017.11.08  

  • 硫化アンモニウム処理したPbS コロイダルナノドット薄膜を用いた電界効果トランジスタ

    竹市祐実, 三谷展弘, 宇野和行, 田中一郎

    薄膜材料デバイス研究会第14 回研究集会  2017.10.20  

  • 「硫化アンモニウム処理したPbS コロイダルナノドット薄膜を用いた電界効果トランジスタ

    竹市祐実, 三谷展弘, 宇野和行, 田中一郎

    第78 回応用物理学会秋季学術講演会  2017.09.08  

  • 硫化アンモニウム処理したPbS コロイダルナノドット薄膜を用いた電界効果トランジスタ

    竹市祐実, 三谷展弘, 宇野和行, 田中一郎

    第78 回応用物理学会秋季学術講演会  2017.09.08  

  • ミストCVD 法によるSnOx 薄膜の成長と酸化数制御

    中村幸, 宇野和行, 田中一郎

    第78 回応用物理 学会秋季学術講演会  2017.09.08  

  • ポリシルセスキオキサンゲート絶縁膜の紫外線重合用低分子架教材の検討

    岡田秀一, 中原佳夫, 宇野和行, 田中一郎

    第78回応用物理学会秋季学術講演会  2017.09  

  • ブチル基で修飾したベンゾジチオフェンダイマーを用いた有機薄膜トランジスタのフローコート法による作製

    森 慎吾, 福村光平, 大須賀秀次, 宇野和行, 田中一郎

    第78回応用物理学会秋季学術講演会  2017.09  

  • Photoluminescence Emissions from Exciton and Defects in CdS Grown by Mist Chemical Vapor Deposition

    Kazuyuki Uno, Yuuka Takimoto, Ichiro Tanaka

    29th International Conference on Defects in Semiconductor (ICDS2017)  2017.08.03  

  • ミストCVD 法による酸化スズ薄膜の成長

    中村幸, 宇野和行, 田中一郎

    日本材料学会半導体エレク トロニクス部門委員会  2017.07.15  

  • ミストCVD 法によるCdS 薄膜の成長

    宇野和行, 瀧本悠華, 田中一郎

    第64回応用物理学会春季 学術講演会  2017.03.17  

  • ポリシルセスキオキサンゲート絶縁膜の表面平坦化によるペンタセン薄膜トランジスタのキャリア移 動度向上

    道浦大祐, 中原佳夫, 宇野和行, 田中一郎

    第64回応用物理学会春季学術講演会  2017.03.15  

  • 溶液プロセス可能なベンゾジチオフェンダイマー誘導体を用いた有機薄膜トランジスタ

    廣田 武士, 大須賀 秀次, 宇野 和行, 田中 一郎

    第64回応用物理学会春季学術講演会  2017.03  

  • コロイダルナノドット単粒子膜を用いた有機メモリトランジスタの特性に対するドットサイズの影響

    中野 史掘, 宇野 和行, 田中 一郎

    第64回応用物理学会春季学術講演会  2017.03  

  • ヘキシル基で修飾したベンゾジチオフェンダイマーを用いた有機薄膜トランジスタ

    廣田武士, 十朱 仁, 大須賀秀次, 宇野和行, 田中一郎

    日本材料学会半導体エレクトロニクス部門委員会 平成28年度第1回講演会・見学会  2017.01  

  • Organic thin film transistors based on solution processed films of benzodithiophenedimers modified with hexyl groups

    Takeshi Hirota, Hitoshi Toake, Hideji Osuga, Kazuyuki Uno, Ichiro Tanaka

    The 12th International Conference on Nao-Molecular Electronocs (ICNME2016)  2016.12.15  

  • 紫外線重合したポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタにおける低分子架橋剤のキャリア移動度に対する影響

    岡田秀一, 中原佳夫, 宇野和行, 田中一郎

    平成28年度日本材料学会半導体エレクトロニクス部門・ナノ材料部門委員会 合同研究会  2016.11  

  • 配位子除去をした半導体コロイダルナノドット単粒子膜をフローティングゲートに用いたペンタセンメモリトランジスタ

    中野史掘, 宇野和行, 田中一郎

    薄膜材料デバイス研究会第13回研究集会  2016.10  

  • ミストCVD 法によるGaP 基板上ZnS の結晶成長

    浅野康幸, 宇野和行, 田中一郎

    第77回応用物理 学会秋季学術講演会  2016.09.14  

  • 紫外線重合したポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタのキャリア移動度に対する低分子架橋剤の影響

    岡田秀一, 中原佳夫, 宇野和行, 田中一郎

    第77回応用物理学会秋季学術講演会  2016.09  

  • Temperature Dependence of Photoluminescence Properties of ZnS Grown by mist CVD

    Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

    The 35th Electronic Materials Symposium (EMS35)  2016.07.06  

  • Temperature Dependence of Photoluminescence Properties of Zinc Sulfide Grown from Aqueous Solutions by Mist Chemical Vapor Deposition

    Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

    The 43th Internatinal Symposium on Compound Semiconductor (ISCS2016)  2016.06.27  

  • Pentacene Memory Transistors Using Monolayer of Ligand-removed Semiconductor Colloidal Nano-dots as a Floating Gate

    Fumihoru Nakano, Kazuyuki Uno, Ichiro Tanaka

    The 43th Internatinal Symposium on Compound Semiconductor (ISCS2016)  2016.06.27  

  • Thermal quenching propertyes of photoluminescence in ZnS grown by mist chemicall vapour deposition

    Kazuyuki Uno, Yasuyuki Asano, Yuichiro Yamasaki, Ichiro Tanaka

    The 15th International Symposium on Science and Technology of Lighting (LS15)  2016.05.25  

  • ミストCVD法を用いて作製したZnS薄膜の光学特性評価

    浅野康幸, 宇野和行, 山崎佑一郎, 田中一郎

    第63回応用物理学会春季学術講演会  2016.03.21  

  • ポリシルセスキオキサンゲート絶縁膜の表面処理によるペンタセン薄膜トランジスタのキャリア移動度向上

    道浦大祐, 中原佳夫, 宇野和行, 田中一郎

    第63回応用物理学会春季学術講演会  2016.03.19  

  • コロイダルナノドット単粒子膜をフローティングゲート層に用いた有機メモリトランジスタ

    中野史掘, 阪川秀紀, 宇野和行, 田中一郎

    第63回応用物理学会春季学術講演会  2016.03  

  • ベンゾゾチオフェン誘導体を用いた有機薄膜トランジスタ

    山下真由子, 福村光平, 後藤芙美子, 大須賀秀次, 宇野和行, 田中一郎

    第63回応用物理学会春季学術講演会  2016.03  

  • ベンゾジチオフェン系薄膜の成膜性改善と有機薄膜トランジスタの作製

    山下真由子, 福村光平, 前田恵, 後藤芙美子, 大須賀秀次, 宇野和行, 田中一郎

    日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回講演会・見学会  2016.01.30  

  • ミストCVD法で作製した硫化亜鉛薄膜のフォトルミネッセンス特性

    浅野康幸, 宇野和行, 山崎佑一郎, 田中一郎

    日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回講演会・見学会  2016.01.30  

  • ポリシルセスキオキサンをゲート絶縁膜に用いたフレキシブルなペンタセントランジスタの評価

    八木一樹, 中原佳夫, 宇野和行, 田中一郎

    日本材料学会半導体エレクトロニクス部門委員会平成27年度第2回研究会  2015.11.21  

  • Lattice and Electronic Structure Evaluations of Cu Doped beta Gallium Oxide by ab-initio Calculation

    Kazuyuki Uno, Sachi Nakamura, Ichiro Tanaka

    The 1st International Workshop on Gallium Oxide and Related Materials (IWGO-1)  2015.11.04  

  • Chemical and Physical Growth Mechanisms of Zinc Sulfide and Zinc Oxide Thin Films Grown by Mist Chemical Vapor Deposition

    Kazuyuki Uno, Yuichiro Yamasaki, Ping Gu, Ichiro Tanaka

    The 17th International Conference on II-VI Compounds and Related Materials (II-VI 2015)  2015.09.14  

  • ポリシルセスキオキサンをゲート絶縁膜に用いたフレキシブルなペンタセントランジスタ

    八木一樹, 中原佳夫, 宇野和行, 田中一郎

    第76回応用物理学会秋季学術講演会  2015.09.13  

  • ミストCVD法による酸化亜鉛と硫化亜鉛の成長機構

    宇野和行, 山崎佑一郎, 田中一郎

    第3 回和歌山大・徳島大合同光・ナノテクノロジー研究会  2015.08.07  

  • ポリシルセスキオキサンを用いた有機薄膜トランジスタ用ゲート絶縁膜

    田中一郎, 芝尾秀人, 松田 悠, 中原佳夫, 宇野和行

    第3回和歌山大・徳島大合同 光・ナノテクノロジー研究会  2015.08  

  • Growth mechanisms of ZnS and ZnO thin films by mist CVD

    Kazuyuki Uno, Yuichiro Yamasaki, Ping Gu, Ichiro Tanaka

    The 34th Electronic Materials Symposium (EMS34)  2015.07.16  

  • 紫外線重合したポリシルセスキオキサンをゲート絶縁膜に用いた有機薄膜トランジスタ

    道浦大祐, 中原佳夫, 宇野和行, 田中一郎

    日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回研究会  2015.07.11  

  • Writing characteristics of organic memory transistors with embedded monolayer of semiconductor colloidal nano-dots

    Fumihoru Nakano, Hideki Sakagawa, Kazuyuki Uno, Ichiro Tanaka

    17th International Conference on Modulated Semiconductor Structures (MSS-17)  2015.07  

  • 紫外線重合したポリシルセスキオキサンゲート絶縁膜を用いたペンタセン薄膜トランジスタ

    芝尾秀人, 中原佳夫, 宇野和行, 田中一郎

    第62回応用物理学会春季学術講演会  2015.03  

  • ベンゾジチオフェンダイマー系材料を用いた有機薄膜トランジスタの作製

    山下真由子, 福村光平, 前田恵, 後藤芙美子, 大須賀秀次, 宇野和行, 田中一郎

    日本材料学会半導体エレクトロニクス部門委員会 平成26年度第1回講演会・見学会  2015.01  

  • High-mobility 6,13-bis(triisopropylsilylethynyl) pentacene transistors using solutionprocessed polysilsesquioxane gate dielectric layers

    Yu Matsuda, Yoshio Nakahara, Daisuke Michiura, Kazuyuki Uno, Ichiro Tanaka

    11th International Conference on Nano-Molecular Electronics (ICNME2014)  2014.12.18  

  • Investigation of ultraviolet light curable polysilsesquioxane gate dielectric layers for pentacene thin film transistors

    Hideto Shibao, Yoshio Nakahara, Kazuyuki Uno, Ichiro Tanaka

    11th International Conference on Nano-Molecular Electronics (ICNME2014)  2014.12.18  

  • ポリシルセスキオキサンをゲート絶縁膜に用いた高キャリア移動度TIPS-pentaceneトランジスタ

    松田悠, 中原佳夫, 道浦大祐, 宇野和行, 田中一郎

    日本材料学会半導体エレクトロニクス部門委員会平成26年度第2回研究会  2014.11  

  • ポリシルセスキオキサンをゲート絶縁膜に用いたTIPS-pentaceneトランジスタの作製

    松田悠, 中原佳夫, 道浦大祐, 宇野和行, 田中一郎

    第75回応用物理学会秋季学術講演会  2014.09  

  • Growth of Zinc Oxide on Pyrolytic Graphite Sheet by Mist Chemical Vapor Deposition

    Shunsuke Kake, Kazuyuki Uno, Ikuhiro Furotani, Yuichiro Yamazaki, Ichiro Tanaka

    The 16th International Conference on II-VI Compounds and Related Materials (II-VI 2013)  2013.09.10  

  • Growth of ZnO Films on n-GaN Using Photoassisted Electrodeposition

    Kazuyuki Uno, Mitsuteru Sainokami, Junpei Ikegami, Ichiro Tanaka

    The 40th Interenational Symposium on Compound Semiconductors (ISCS2013)  2013.05.21  

  • Organic Field-effect Transistors Fabricated by Solution Process Using TMTSF-TCNQ Complex Crystals Grown at Various Temperatures

    Takuya Nawata, Hideo Yamakado, Kazuyuki Uno, Ichiro Tanaka

    The 40th Interenational Symposium on Compound Semiconductors (ISCS2013)  2013.05.20  

  • ZnO thick film growth on GaN substrate using photo-assisted electrochemical deposition

    Kazuyuki Uno, Yasuhiro Tauchi, Ichiro Tanaka

    International Workshop on Nitride Semiconductors 2012 (IWN2012)  2012.10.18  

  • Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiphene-dimer films

    T. Sakai, K. Shibamoto, Y. Matsumoto, H.Osuga, K. Uno, Ichiro Tanaka

    The 17th International Conference on Molecular Beam Epitaxy (MBE2012)  2012.09.24  

  • Organic memory transistors using embedded monolayer of semiconductor colloidal nanodots as a floating gate

    Kaori Kajimito, D. Matsui, Kazuyuki Uno, Ichiro Tanaka

    The 2012 International Conference on Flexible and Printed Electronics (ICFPE2012)  2012.09.07  

  • Selective growth of zinc oxide on submicron lines & spaces patterns of photoresist by electrochemical deposition

    Kazuyuki Uno, Yosuke Nakatsuji, Ichiro Tanaka

    The 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)  2011.05.22  

  • Epitaxial electrochemical-deposition of ZnO on graphite and p-GaN substrates

    Kazuyuki Uno, Yoshinori Ishii, Ichiro Tanaka

    The 52nd Annual Forum Electronic Materials Conference (EMC2010)  2010.06.24  

  • Electrochemical Deposition of Zinc Oxide on Graphite Substrate and Graphite Sheet

    K. Uno, Y. Ishii, H. Manabe, K. Takamatsu, I. Tanaka

    The 37th International Symposium on Compound Semiconductors (ISCS2010)  2010.06.03  

  • Pentacene Memory Transistors Using Monolayer of Semiconductgor Colloidal Nano-Dots

    K. Kajimoto, T. Minami, K. Uno, I. Tanaka

    The 37th International Symposium on Compound Semiconductors (ISCS2010)  2010.06.01  

  • Memory effect of pentacene field-effect transistors with embedded monolayer of semiconductor colloidal nano-dots

    Kaori Kajimoto, Kazuyuki Uno, Ichiro Tanaka

    The 14th International Conference on Modulated Semiconductor Structures (MSS14)  2009.07.23  

  • Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

    Ichiro Tanaka, Y. Tada, S. Nakatani, K. Uno, I.Kamiya, H. Sakaki

    The 14th International Conference on Modulated Semiconductor Structures (MSS14)  2009.07.23  

  • Memory Effect of Organic Field-Effect Transistors with Embedded Monolayer of Semiconductor Colloidal Quantum Dots

    Kaori Kajimoto, Masahumi Minami, Kazuyuki Uno, Ichiro Tanaka

    The IEEE Nanotechnology Materials and Devices Conference (NMDC2008)  2008.10.21  

  • Electrochemical-Selective Growth of Nano-Sized ZnO Crystals

    Kazuyuki Uno, Tsutomu Ina, Takayuki Asaoka, Tadayuki Kanda, Yoshinori Ishii, Ichiro Tanaka

    The IEEE Nanotechnology Materials and Devices Conference (NMDC2008)  2008.10.21  

  • Current-Voltage Characteristics of GaAs Nano-Schottky Diodes Using InAs Self-Assembled Quantum Dots as Nano-Electrodes; Dependence on Doping Concentration

    Ichiro Tanaka, S. Nakatani, K. Uno, I. Kamiya, H. Sakaki

    The IEEE Nanotechnology Materials and Devices Conference (NMDC2008)  2008.10.20  

  • Expansion Ratio Dependence of E2 Mode Vibration of GaN Lattices using ab initio Molecular Dynamics Calculations

    Kazuyuki UNO, Takuki INOUE, Ichiro TANAKA, Toshiyuki TAKIZAWA

    2008 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments (ASPE2008)  2008.10.10  

  • Expansion ratio dependence of lattice vibration of GaN using ab initio molecular dynamics calculations

    Kazuyuki Uno, Takuki Inoue, Toshiyuki Takizawa, Ichiro Tanaka

    The Second International Symposium on Growth of III-Nitrides (ISGN-2)  2008.07.06  

  • Investigation of Electric Double Layer and Crystal Shapes of Electrochemically Growtn Zinc Oxide

    Kazuyuki Uno, Naoyuki Kanda, Masashi Aisu, Takayuki Asaoka, Tsutomu Ina, Ichiro Tanaka, Munenori Yamashita

    The 34th International Symposium on Compound Semiconductors (ISCS2007)  2007.10.18  

  • Resonant Tunneling of Electrons through Single Self-Assembled InAs Quantum Dot at Room Temperature Studied with Conductive AFM Tip

    I. Tanaka, Y. Tada, S. Nakatani, K. Uno, M. Azuma, K. Umemura, I. Kamiya, H. Sakaki

    The 34th International Symposium on Compound Semiconductors (ISCS2007)  2007.10.15  

  • Prediction of Transition Composition Ratio of ZnO Related Alloys

    Kazuyuki Uno, Megumi Nagao, Tadayuki Kanda, Ichiro Tanaka

    2007 Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments  2007.10.05  

  • Organic Field-Effect Transistors based on Benzodithiophene-Dimer Films

    K. Yamaguchi, K. Nakashima, S. Takamiya, M. Minami, Y. Doge, Y. Nishoide, H. Osuga, K. Uno, I. Tanaka, C. Nakamoto

    4th International Conference on Molecular and Bio-electronics(M&BE4)  2007.05.14  

  • Conductive probe AFM investigation on monolayer films of colloidal CdSe quantum dots

    Itaru Kamiya, Ichiro Tanaka, Risa Wada, Masayo Arimoto, Kazuyuki Uno, Tomohiro Hayashi, Masahiko Hara

    2006 American Physical Society March Meeting  2006.03.13  

  • Thermal Annealing Effect and Local Atomic Configurations in GaInNAsSb Alloys

    Kazuyuki Uno, Masahiro Takewa, Kazuya Sakai, Ichiro Tanaka, Homan B.Yuen, Seth, R.Bank, Mark A Wistey, James S.Harris

    2005 Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments (ASPE2005)  2005.10.14  

  • Thermal Annealing Effect and Local Atomic Configurations in GaInNAs Alloys

    Kazuyuki Uno, Masako Yamada, Ichiro Tanaka, Tomoya Uruga

    2004 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments  2004.11.19  

  • Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlaid quantum dot electrode

    Itaru Kamiya, Ichiro Tanaka, Yoshinobu Tada, Masakzu Azuma, Kazuyuki Uno, Hiroyuki Sakaki

    International Conference on Molecular Beam Epitaxy (MBE2004)  2004.08.25  

  • Thernal Annealing Effects and Local Atomic Configurations in GaInNAs Thin Films

    Kazuyuki UNO, Masako YAMADA, Toshiyuki TAKIZAWA, Ichiro TANAKA

    International Conference on Molecular Beam Epitaxy (MBE2004)  2004.08.24  

  • Current-voltage Characteristics of Single CdSe Colloidal Nano-dots Measured with a Conductive Carbon Nano-tube Tip

    Ichiro TANAKA, K.Kajimoto, K.Uno, O.Ohtsuki, T.Murase, H.Asami, M.Hara, I.Kamiya

    8th International Conference on Nanometer-Scale Science and Technology  2004.06.28  

  • Thermal Annealing Effects and Local Atomic Configurations in GaInNAs Thin Films by Fluorescence X-Ray Absorption Fine Structure Spectroscopy

    Kazuyuki Uno, Masako Yamada, Toshiyuki Takizawa, Ichiro Tanaka

    46TH ELECTRONIC MATERIALS CONFERENCE,  2004.06.24  

  • Current-voltage Characteristics of Single CdSe Colloidal Nanodots Measured by Conductive-tip Atomic Force Microscopy

    Ichiro Tanaka, Eri Kawasaki, Osamu Ohtsuki, Kazuyuki Uno, Masahiko Hara, Harumi Asami, Tomohide Murase, Itaru Kamiya

    Material Research Society 2003  2003.12.01  

  • Thermal Annealing Effect in GaInNAs Thin Films Estimated by X-ray Absorption Fine Structure Spectroscopy

    Kazuyuki Uno, Masako Yamada, Toshiyuki Takizawa, Ichiro Tanaka

    2003 International Conference on Solid State Device and Materials  2003.09.17  

  • Photoluminescence properties of AlAs/GaAs disordered superlattice with fixed GaAs layer thickness

    Kazuyuki Uno, Susumu Noda, Akio Sasaki

    The First International Conference on Low Dimensinal Structure & Devices  1995.08.09  

  • Carrier Localization and Photoluminescent Thermal Quenching of AlGaAs Disordered Superlattices

    Kazuyuki Uno, Susumu Noda, Akio Sasaki

    Electronic Materials Conference (EMC1994)  1994.06.23  

  • “Temperature Dependence of Photoluminescence Properties of AlAs/AlGaAs and AlGaAs/- GaAs Disordered Superlattices

    Kazuyuki Uno, Kotaro Hirano, Susumu Noda, Akio Sasaki

    International Symposium on Gallium Arsenide and Related Compounds  1992.09.30  

  • Luminescence Properties of AlxGa1−xAs/AlyAl1−yAs(x > y) Disordered Superlattices

    A.Sasaki, K.Uno, K.Hirano, S.Noda

    Electronic Materials Conference (EMC1992)  1992.06.24  

  • Luminescence Properties of Disordered Superlattices

    Akio Sasaki, Kazuyuki Uno, Susumu Noda

    International Symposium on Science and Technology of Mesoscopic Structures  1991.11.06  

  • Photoconducting properties of α-Ga<sub>2</sub>O<sub>3</sub> thin films grown on an a-plane sapphire substrate by mist chemical vapor deposition

    Kazuyuki Uno, Keishi Yamaoka

    Compound Semiconductor Week 2023, FrE2-4    (Ramada Plaza Hotel, Jeju) 

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Patents

  • 結晶性酸化物膜

    Patent no: 特許第7306640号

    Date registered: 2023.07.03 

    Date applied: 2019.08.28 ( 特願2022-033298 )  

    Inventor(s)/Creator(s): 渡部武紀、橋上 洋、坂爪崇寛、宇野和行  Applicant: 国立大学法人和歌山大学、信越化学工業株式会社

  • 金属膜形成方法

    Patent no: 特許第7261410号

    Date registered: 2023.04.12 

    Date applied: 2019.09.02 ( 特願2019-159947 )   Publication date: 2021.03.11 ( 特開2021-38428 )  

    Inventor(s)/Creator(s): 渡部武紀、橋上 洋、坂爪崇寛、宇野和行  Applicant: 国立大学法人和歌山大学、信越化学工業株式会社

  • 酸化ガリウム半導体膜の製造方法

    Patent no: 特許第7179294号

    Date registered: 2022.11.18 

    Date applied: 2019.04.12 ( 特願2019-76229 )   Publication date: 2020.10.22 ( 特開2020-174153 )  

    Inventor(s)/Creator(s): 宇野和行、松本一寿、渡部武紀、橋上洋  Applicant: 国立大学法人和歌山大学、信越化学工業株式会社

  • 積層構造体の製造方法

    Patent no: 特許第7045014号

    Date registered: 2022.03.23 

    Date applied: 2019.08.28 ( 特願2019-156145 )   Publication date: 2021.03.01 ( 特開2021-31358 )  

    Inventor(s)/Creator(s): 渡部武紀、橋上 洋、坂爪崇寛、宇野和行  Applicant: 国立大学法人和歌山大学、信越化学工業株式会社

  • 酸化ガリウムの製造方法及び結晶成長装置

    Patent no: 特許第6793942号

    Date registered: 2020.11.13 

    Date applied: 2016.11.01 ( 特願2016-213949 )   Publication date: 2018.05.10 ( 特開2018-70422 )  

    Inventor(s)/Creator(s): 宇野和行、中村幸  Applicant: 国立大学法人和歌山大学

  • 光検出器

    Date applied: 2024.02.16 ( 特願2024-022399 )  

    Inventor(s)/Creator(s): 宇野和行  Applicant: 国立大学法人和歌山大学

  • 酸化ガリウム半導体膜及び原料溶液

    Date applied: 2022.11.08 ( 特願2022-179004 )   Publication date: 2022.11.08 ( 特開2023-15226 )  

    Inventor(s)/Creator(s): 宇野和行、渡部武紀、橋上洋、松本一寿 

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    特願2019-76229の分割出願

  • 結晶性酸化物膜、積層構造体及び半導体装置

    Date applied: 2022.03.04 ( 特願2022-33298 )   Publication date: 2022.06.14 ( 特開2022-88406 )  

    Inventor(s)/Creator(s): 宇野和行、渡部武紀、橋上洋、坂爪崇寛  Applicant: 国立大学法人和歌山大学、信越化学工業株式会社

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    特願2019-156145の分割出願

  • 原料溶液の製造及び成膜方法

    Date applied: 2021.05.04 ( 特願2021-078230 )   Public disclosure date: 2022.11.10 ( WO2022/234750 )

    Inventor(s)/Creator(s): 渡部武紀、橋上 洋、坂爪崇寛、宇野和行、太田茉莉香  Applicant: 国立大学法人和歌山大学、信越化学工業株式会社

  • 成膜方法及び成膜装置

    Date applied: 2020.09.04 ( 特願2020-148776 )   Publication date: 2022.03.16 ( 特開2022-43480 )  

    Inventor(s)/Creator(s): 宇野和行、渡部武紀、橋上洋、坂爪崇寛 

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Research Exchange

  • 2022年度第1回日本材料学会半導体エレクトロニクス部門研究会

    2022.08
     
  • 和歌山大学・和歌山化学工業協会会員交流会

    2021.12
     
  • 和歌山大学・和歌山化学工業協会会員交流会

    2021.11
     
  • P型酸化ガリウム作製方法の確立

    2018.11
    -
    Now
     

     Joint research

  • 科研費説明会

    2014.10
     
  • 科研費説明会

    2013.09
     
  • 第59回応用物理学関係連合講演会

    2012.03
     
  • 第72回応用物理学会学術講演会

    2011.08
    -
    2011.09
     
  • The 30th Electronic Materials Symposium (EMS30)

    2011.06
    -
    2011.07
     
  • The 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)

    2011.05
     

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KAKENHI

  • 高品質なα型酸化ガリウム系薄膜による量子ヘテロ構造物性の研究

    2018.04
    -
    2021.03
     

    Grant-in-Aid for Scientific Research(C)  Principal investigator

  • 窒化物混晶半導体の発光機構の解明

    2006.04
    -
    2008.03
     

    Grant-in-Aid for Scientific Research(C)  Co-investigator

  • 超格子混晶半導体の光学特性の研究

    2004.04
    -
    2006.03
     

    Grant-in-Aid for Scientific Research(C)  Co-investigator

Public Funding (other government agencies of their auxiliary organs, local governments, etc.)

  • 全光通信のための半導体材料の研究

    2002.04
    -
    2003.03
     

    Principal investigator

Instructor for open lecture, peer review for academic journal, media appearances, etc.

  • 査読6件

    2022.04
    -
    2023.03

    日本材料学会,Elsevier, 応用物理学会

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    学術雑誌等の編集委員・査読・審査員等

    学術誌の査読

  • 査読11件

    2021.04
    -
    2022.03

    日本材料学会,Elsevier, 応用物理学会

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    学術雑誌等の編集委員・査読・審査員等

    学術誌の査読

  • 査読3件

    2020.04
    -
    2021.03

    日本材料学会,Elsevier, 応用物理学会

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    学術雑誌等の編集委員・査読・審査員等

    学術誌の査読3件

  • 査読4件

    2019.04
    -
    2020.03

    日本材料学会,Springer, Elsevier

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    学術雑誌等の編集委員・査読・審査員等

    学術誌の査読4件

  • 査読1件

    2018.04
    -
    2019.03

    Springer

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    学術雑誌等の編集委員・査読・審査員等

    学術誌の査読1件

  • 査読4件

    2017.04
    -
    2018.03

    応用物理学会,日本材料学会,MDPI

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    学術雑誌等の編集委員・査読・審査員等

    学術雑誌の査読4件

  • 日高高校特別講義

    2017.04

    その他

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    小・中・高校生を対象とした学部体験入学・出張講座等

    日高高校の学生を対象に「電気エネルギーの_x000B_発生と消費の昔と今」と題して電気エネルギーの発生と利用についての講義を行った。,日付:11月1日

  • Editor, Special issue on Compound Semiconductors

    2016.05
    -
    2017.03

    Physica Status Solidi a, b, Vol. 214, Issue 3, Wiley

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    学術雑誌等の編集委員・査読・審査員等

    Editor of a Special Issue

  • 査読5件

    2016.04
    -
    2017.03

    応用物理学会,日本材料学会,照明学会

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    学術雑誌等の編集委員・査読・審査員等

    学術雑誌の査読5件

  • NS(ナチュラルサイエンス)I特別講義

    2016.01

    その他

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    小・中・高校生を対象とした学部体験入学・出張講座等

    日高高校の高校1年生の生徒約80名を対象に大学における理工系の学びについて実演を伴う講義を行った。,日付:26

  • 特別号編集委員

    2013.09
    -
    2014.01

    Japanese Journal of Applied Physics, 応用物理学会

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    学術雑誌等の編集委員・査読・審査員等

    特別号編集委員

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Course for renewal of teaching license, teacher-librarian course, etc. (contracted business)

  • 2021  【選択】現代の産業を支える材料の科学と歴史(教員免許状更新講習)

  • 2019  さまざまな材料からながめる電気と電子の技術

  • 2018  さまざまな材料からながめる電気と電子の技術

  • 2017  さまざまな材料からながめる電気と電子の技術

Committee member history in academic associations, government agencies, municipalities, etc.

  • 半導体エレクトロニクス部門委員会幹事

    2021.04.01
    -
    Now
     

    日本材料学会

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    学会運営

    半導体エレクトロニクス部門の運営

  • Steering committee member of the 4th International Workshop on Gallium Oxide and Related Materials

    2019.09
    -
    Now
     

    The 4th International Workshop on Gallium Oxide and Related Materials

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    酸化ガリウム,国際会議

    2022年10月に予定されている酸化ガリウム国際ワークショップを実施するための実行委員として活動している。

  • プログラム委員

    2018.04
    -
    2020.03
     

    The 9th Asia-Pacific Workshop on Widegap Semiconductors

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    学協会、政府、自治体等の公的委員

    国際会議の運営,任期:2018年11月~2020年3月

  • 副委員長

    2017.04
    -
    2020.03
     

    Compound Semiconductor Week 2019

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    学協会、政府、自治体等の公的委員

    日米欧で行われる「化合物半導体国際会議」の実施。投稿件数500件、参加人数800名程度の国際会議。2019年5月19日-5月23日に金沢にて実施予定。

  • プログラム委員

    2016.10
    -
    2019.03
     

    2018年窒化物半導体国際ワークショップ (International Workshop on Nitride Semiconductors, 略称: IWN2018)

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    学協会、政府、自治体等の公的委員

    窒化物半導体に関する研究発表および議論を行う,任期:2019年3月31日

  • プログラム委員

    2016.09
    -
    2019.03
     

    第19回有機金属気相エピタキシャル成長国際会議(19th International Conference of Metalorganic Vapor Phase Epitaxy 略称:ICMOVPE-XIX)

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    学協会、政府、自治体等の公的委員

    半導体薄膜形成技術の一つである有機金属気相エピタキシャル成長法および関連分野に関する研究発表および議論を行う。,任期:2019年3月31日まで

  • 実行委員

    2015.11
    -
    2018.10
     

    The 29th International Conference on Defects in Semiconductors (ICDS29)

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    学協会、政府、自治体等の公的委員

    半導体の欠陥に関する国際会議で、2017年に島根県のくにびきメッセにて開催される。,任期:3年

  • Vice chair of steering committee of CSW

    2015.01
    -
    2017.03
     

    Compound Semiconductor Week 2016

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    学協会、政府、自治体等の公的委員

    2016年化合物半導体国際会議

  • シンポジウム編集委員

    2014.10
    -
    2015.03
     

    応用物理学会合同セッションK企画シンポジウム「酸化物半導体における価電子メタモルフォロジ」

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    学協会、政府、自治体等の公的委員

    シンポジウム企画

  • Committee member

    2014.07
    -
    2017.03
     

    15th International Symposium on the Science and Technology of Lighting

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    学協会、政府、自治体等の公的委員

    第15回照明科学と技術に関する国際シンポジウム

  • Secretary of Program Committee

    2014.06
    -
    2016.03
     

    The 6th International Symposium on Growth of III-Nitrides

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    学協会、政府、自治体等の公的委員

    第6回III族窒化物半導体結晶成長シンポジウム

  • Steering Committee Chair

    2014.05
    -
    2016.03
     

    The 1st International Workshop on Gallium Oxide and Related Materials

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    学協会、政府、自治体等の公的委員

    第1回酸化ガリウム関連材料国際ワークショップ

  • 企画代表

    2013.10
    -
    2014.03
     

    応用物理学会

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    学協会、政府、自治体等の公的委員

    応用物理学会合同セッションK企画シンポジウム「ワイドバンドギャップ酸化物半導体による新しい機能の創成」

  • プログラム委員会委員

    2013.04
    -
    2015.03
     

    社団法人応用物理学会

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    学協会、政府、自治体等の公的委員

    応用物理学に関する学術団体,任期:2010.10~2012.3

  • Symposium E (Functional Oxide Thin Films and Heterostructures for Innovative Devices) Co-Organizer

    2013.04
    -
    2013.10
     

    応用物理学会

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    学協会、政府、自治体等の公的委員

    JSAP-MRS Joint Symposia

  • 半導体エレクトロニクス部門委員会委員

    2012.09
    -
    Now
     

    日本材料学会

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    学協会、政府、自治体等の公的委員

    日本材料学会の中に組織されている半導体エレクトロニクス部門委員会の研究会に関する広報等を行っている。

  • Vice Chair of Program Committee (論文副委員長)

    2012.09
    -
    2014.08
     

    The 16th International Conference on II-VI Compounds (IC II-VI 2013)

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    学協会、政府、自治体等の公的委員

    II-VI族化合物半導体に関する国際会議

  • Organizer of JSAP-MRS Joint Session (MRS2013F-E)

    2012.09
    -
    2013.10
     

    社団法人 応用物理学会

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    学協会、政府、自治体等の公的委員

    応用物理学に関する学術団体

  • 総務委員

    2012.04
    -
    2014.05
     

    International Symposium on Compound Semiconductors 2013

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    学協会、政府、自治体等の公的委員

    化合物半導体に関する国際会議

  • プログラム委員会委員(合同セッションK代表世話人)

    2010.10
    -
    2012.03
     

    社団法人応用物理学会

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    学協会、政府、自治体等の公的委員

    応用物理学に関する学術団体,任期:2010.10~2012.3

  • Secretary of Program Committee

    2010.05
    -
    2013.06
     

    International Workshop on Nitride Semiconductors 2012 (IWN2012, 窒化物国際ワークショップ2012)

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    学協会、政府、自治体等の公的委員

    窒化物半導体に関する国際会議,任期:2010.5~2013.6

  • member of program committee (論文委員)

    2010.04
    -
    2011.10
     

    Asia-Pacific Workshop on Widegap Semiconductors 2011 (APWS-2011, 第5回アジアパシフィックワイドギャップ半導体国際ワークショップ)

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    学協会、政府、自治体等の公的委員

    日本・中国・韓国・台湾の、窒化ガリウムなど可視潤オ紫外域にバンドギャップをもつ半導体材料の研究者が会する会合。共催は日本応用物理学会および日本結晶成長学会、協賛は日本学術振興会である。日本学術振興会第161委員会のメンバーが中心になって行われる。,任期:2010.4~2011.10

  • vice-chair of steering committee (実行副委員長)

    2008.03
    -
    2011.09
     

    The 35th International Symposium on Compound Semiconductor 2010 (第35回 化合物半導体国際会議2010)

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    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:2008.3~2011.9

  • Member of Executive Committee

    2007.09
    -
    2009.09
     

    The IEEE Nanotechnology Maeterials and Device Conference 2008 (IEEE NMDC2008)

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    学協会、政府、自治体等の公的委員

    ナノ材料に関する国際会議,任期:2007.9~2009.9

  • Secretry of Program Committee (プログラム委員会総務担当)

    2007.04
    -
    2008.09
     

    The 2nd International Symposium on Growth of III-Nitrides (第2回 窒化物半導体結晶成長国際会議)

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    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:2007.4~2008.9

  • Secretry of Program Committee (プログラム委員会総務担当)

    2006.04
    -
    2009.06
     

    The 34th International Symposium on Compound Semiconductor 2007 (第34回 化合物半導体国際会議2007)

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    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:2006.4~2009.6

  • 実行委員

    2005.01
    -
    2006.10
     

    International Workshop on Nitride Semiconductors 2006 (窒化物半導体国際ワークショップ)

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    学協会、政府、自治体等の公的委員

    学協会、政府、自治体等の公的委員,任期:2005.1~2006.10

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Other Social Activities

  • ミストCVD法によるGa2O3膜成膜の件

    2018.04
    -
    2019.03

    その他

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    産業界、行政諸機関等と行った共同研究、新技術創出、コンサルティング等

    酸化ガリウム薄膜の成長,実施者:宇野和行